ADR225 [ADI]

210˚C Precision Micropower Voltage Reference; 210E ?? C精密微功耗电压基准
ADR225
型号: ADR225
厂家: ADI    ADI
描述:

210˚C Precision Micropower Voltage Reference
210E ?? C精密微功耗电压基准

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210˚C Precision Micropower  
Voltage Reference  
Preliminary Technical Data  
ADR225  
FEATURES  
PIN CONFIGURATION  
Extreme high temperature operation  
−40°C to +210°C, Ceramic flat pack (CFP)  
−40°C to +175°C, SOIC package  
Temperature coefficient:  
20 ppm/°C, Ceramic Flat Pack (CFP)  
10 ppm/°C, SOIC Package  
High output current: 10 mA  
Low supply current: 50 μA Max  
Initial accuracy: 2mꢀ  
Low dropout voltage  
APPLICATIONS  
Figure 1. 8-Lead Package  
Down-Hole Drilling and Instrumentation  
Avionics  
Heavy Industrial  
High Temperature Environments  
BASIC ꢀOLTAGE REFERENCE CONNECTIONS  
GENERAL DESCRIPTION  
The circuit in Figure 2 illustrates the basic configuration for the  
ADR225. Note the 10 μF/0.1 μF bypass network on the input  
and at least 1 μF bypass capacitor on the output is required for  
proper device operation. It is recommended that no  
The ADR225 is a precision bandgap voltage reference specified  
for very high temperature operation. It uses a micro-power  
core topology and laser trimming of highly stable, thin-film  
resistors to achieve a very low temperature coefficient and high  
initial accuracy while consuming very little power. A maximum  
operating current of 50 μA and a low dropout voltage allows the  
device to function very well in battery-powered equipment.  
connections be made to Pin 1, Pin 3, Pin 5, Pin 7, and Pin 8.  
The reference is offered in an 8 lead SOIC plastic package with  
an operating temperature range of −40°C to +175°C. It is also  
available in an 8 lead ceramic flat pack (CFP) with an operating  
temperature range of −40°C to +210°C. Both devices are  
designed for robustness at extreme temperatures and are  
qualified for 1000 hours of operation at the maximum  
temperature rating.  
Figure 2. Basic Voltage Reference Connections  
Rev. PrA  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2013 Analog Devices, Inc. All rights reserved.  
ADR225  
Preliminary Technical Data  
ELECTRICAL CHARACTERISTICS  
@ VS = 3.3V, TMin< TA < TMax , unless otherwise noted.  
Table 1.  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Min  
Typ  
Max  
Unit  
SOIC −40°C ≤ TA ≤ +175°C  
CFP −40°C ≤ TA ≤ +210°C  
SUPPLY CURRENT  
Isy  
No load  
30  
2
50  
10  
35  
μA  
INITIAL ACCURACY1  
VO  
IOUT = 0 mA  
IOUT = 0 mA  
2
mV  
TEMPERATURE  
COEFFICIENT2  
TCVO/°C  
10  
30  
40  
20  
ppm/°C  
LINE REGULATION  
ΔVO/ΔVIN  
3.0 V ≤ VS ≤ 15 V, IOUT = 0  
mA  
5
5
ppm/V  
LOAD REGULATION3  
ΔVO/ΔVLOAD VS = 5.0 V, 0 mA ≤ IOUT ≤ 10  
mA  
10  
40  
10  
ppm/mA  
DROPOUT VOLTAGE  
NOISE VOLTAGE  
VS − VO  
eN  
ILOAD = 10 mA  
1.00  
1.00  
25  
V
0.1 Hz to 10 Hz  
25  
μV p-p  
1 For proper operation, a 1 μF capacitor is required between the output pin and the GND pin of the device.  
2 TCVO is defined as the ratio of output change with temperature variation to the specified temperature range expressed in ppm/°C.  
TCVO = (VMAX VMIN)/VO(TMAX TMIN  
3 Load regulation specification includes the effect of self-heating.  
)
Rev. PrA | Page 2 of 3  
Preliminary Technical Data  
ADR225  
ABSOLUTE MAXIMUM RATINGS  
THERMAL RESISTANCE  
Table 2.  
θJA is specified for worst-case conditions; that is, θJA is specified  
s specified for the device soldered in the circuit board.  
Parameter  
Rating  
Supply Voltage  
−0.3 V to +15 V  
Output to GND  
−0.3 V to VS + 0.3 V  
−65°C to +150°C  
Table 3.  
Storage Temperature Range  
Operating Temperature Range  
SOIC Package  
Package Type  
8-Lead SOIC (R)  
8-Lead CFP (RU)  
θJA  
θJC  
Unit  
°C/W  
°C/W  
158  
TBD  
43  
TBD  
−40°C to +175°C  
−40°C to +210°C  
CFP Package  
Junction Temperature Range  
SOIC Package  
CFP Package  
−40°C to +175°C  
−40°C to +210°C  
300°C  
ESD CAUTION  
Lead Temperature (Soldering 60 sec)  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
©2013 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
PR11525-0-7/13(PrA)  

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