ADP3180 [ADI]

6-Bit Programmable 2-, 3-, 4-Phase Synchronous Buck Controller; 6位可编程2-, 3-, 4相同步降压控制器
ADP3180
型号: ADP3180
厂家: ADI    ADI
描述:

6-Bit Programmable 2-, 3-, 4-Phase Synchronous Buck Controller
6位可编程2-, 3-, 4相同步降压控制器

控制器
文件: 总20页 (文件大小:431K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
6-Bit Programmable 2-, 3-, 4-Phase  
Synchronous Buck Controller  
ADP3180*  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Selectable 2-, 3-, or 4-Phase Operation at up to  
1 MHz per Phase  
VCC  
28  
RAMPADJ RT  
14 13  
؎14.5 mVWorst-Case Differential Sensing Error over  
Temperature  
Logic-Level PWM Outputs for Interface to  
External High Power Drivers  
ADP3180  
UVLO  
SHUTDOWN  
AND BIAS  
11  
EN  
OSCILLATOR  
Active Current Balancing between All Output Phases  
Built-In Power Good/Crowbar Blanking Supports  
On-the-FlyVID Code Changes  
6-Bit Digitally Programmable 0.8375V to 1.6V Output  
Programmable Short Circuit Protection with  
Programmable Latch-Off Delay  
SET EN  
RESET  
P  
27  
PWM1  
19  
GND  
DAC  
+150mV  
RESET  
P  
26  
PWM2  
CSREF  
CURRENT  
BALANCING  
CIRCUIT  
2-, 3-, 4-PHASE  
DRIVER LOGIC  
RESET  
P  
25  
PWM3  
APPLICATIONS  
DAC  
Desktop PC Power Supplies for:  
Next Generation Intel® Processors  
VRM Modules  
–250mV  
P RESET  
24  
PWM4  
10  
PWRGD  
DELAY  
CROWBAR  
CURRENT  
LIMIT  
GENERAL DESCRIPTION  
23  
SW1  
The ADP3180 is a highly efficient multiphase synchronous buck  
switching regulator controller optimized for converting a 12V  
main supply into the core supply voltage required by high per-  
formance Intel processors. It uses an internal 6-bit DAC to read  
a voltage identification (VID) code directly from the processor,  
which is used to set the output voltage between 0.8375V and  
1.6V, and uses a multimode PWM architecture to drive the logic  
level outputs at a programmable switching frequency that can be  
optimized forVR size and efficiency.The phase relationship of the  
output signals can be programmed to provide 2-, 3-, or 4-phase  
operation, allowing for the construction of up to four comple-  
mentary buck switching stages.  
22  
SW2  
21  
SW3  
15  
ILIMIT  
20  
SW4  
EN  
17  
CSSUM  
CURRENT  
LIMIT  
CIRCUIT  
16  
CSREF  
12  
DELAY  
18  
CSCOMP  
SOFT-  
START  
The ADP3180 also includes programmable no-load offset and  
slope functions to adjust the output voltage as a function of the  
load current so that it is always optimally positioned for a system  
transient.The ADP3180 also provides accurate and reliable short  
circuit protection, adjustable current limiting, and a delayed  
Power Good output that accommodates on-the-fly output voltage  
changes requested by the CPU.  
8
9
FB  
COMP  
PRECISION  
REFERENCE  
VID  
DAC  
ADP3180 is specified over the commercial temperature range of  
0°C to 85°C and is available in a 28-leadTSSOP package.  
7
1
2
3
4
5
6
FBRTN  
VID4 VID3 VID2 VID1 VID0 VID5  
*Patent Pending  
REV. 0  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed byAnalog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
that may result from its use. No license is granted by implication or oth-  
erwise under any patent or patent rights of Analog Devices.Trademarks  
andregisteredtrademarksarethepropertyoftheirrespectivecompanies.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
www.analog.com  
© 2003 Analog Devices, Inc. All rights reserved.  
ADP3180–SPECIFICATIONS1  
(VCC = 12 V, FBRTN = GND, TA = 0؇C to 85؇C, unless otherwise noted.)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
ERROR AMPLIFIER  
OutputVoltage Range  
Accuracy  
VCOMP  
VFB  
0.5  
–14.5  
3.5  
+14.5 mV  
V
Relative to Nominal DAC Output,  
Referenced to FBRTN,  
CSSUM = CSCOMP (Figure 3)  
VCC = 10V to 14V  
Line Regulation  
Input Bias Current  
FBRTN Current  
Output Current  
Gain Bandwidth Product  
Slew Rate  
DVFB  
0.05  
15.5  
90  
500  
20  
%
µA  
µA  
µA  
MHz  
V/µs  
IFB  
14  
17  
120  
IFBRTN  
IO(ERR)  
GBW(ERR)  
FB Forced toVOUT – 3%  
COMP = FB  
CCOMP = 10 pF  
50  
VID INPUTS  
Input LowVoltage  
Input HighVoltage  
Input Current, InputVoltage Low  
Input Current, InputVoltage High  
Pull-Up Resistance  
Internal Pull-UpVoltage  
VIDTransition DelayTime2  
No CPU DetectionTurn-Off  
DelayTime2  
VIL(VID)  
VIH(VID)  
IIL(VID)  
IIH(VID)  
RVID  
0.4  
V
V
0.8  
35  
VID(X) = 0V  
VID(X) = 1.25V  
–20  
15  
60  
–30  
25  
115  
µA  
µA  
kW  
V
ns  
ns  
0.825 1.00  
400  
400  
VID Code Change to FB Change  
VID Code Change to 11111 to  
PWM Going Low  
OSCILLATOR  
Frequency Range2  
FrequencyVariation  
fOSC  
fPHASE  
0.25  
155  
4
245  
MHz  
kHz  
kHz  
kHz  
V
mV  
µA  
TA = 25°C, RT = 250 kW, 4-Phase  
TA = 25°C, RT = 115 kW, 4-Phase  
TA = 25°C, RT = 75 kW, 4-Phase  
RT = 100 kW to GND  
200  
400  
600  
2.0  
OutputVoltage  
RAMPADJ OutputVoltage  
RAMPADJ Input Current Range  
VRT  
VRAMPADJ  
IRAMPADJ  
1.9  
–50  
0
2.1  
+50  
100  
RAMPADJ – FB  
CURRENT SENSE AMPLIFIER  
OffsetVoltage  
Input Bias Current  
Gain Bandwidth Product  
Slew Rate  
Input Common-Mode Range  
Positioning Accuracy  
OutputVoltage Range  
Output Current  
VOS(CSA)  
IBIAS(CSA)  
GBW(CSA)  
CSSUM – CSREF, SeeTest Circuit 1  
–3  
–50  
+3  
+50  
mV  
nA  
MHz  
V/µs  
V
mV  
V
20  
50  
CCSCOMP = 10 pF  
CSSUM and CSREF  
SeeTest Circuit 2  
0
–77  
0.05  
3
–83  
3.3  
DVFB  
–80  
500  
ICSCOMP  
= 100µA  
ICSCOMP  
µA  
CURRENT BALANCE CIRCUIT  
Common-Mode Range  
Input Resistance  
Input Current  
Input Current Matching  
VSW(X)CM  
RSW(X)  
ISW(X)  
–600  
20  
4
+200  
40  
10  
mV  
kW  
µA  
%
SW(X) = 0V  
SW(X) = 0V  
SW(X) = 0V  
30  
7
DISW(X)  
–5  
+5  
CURRENT LIMIT COMPARATOR  
ILIMIT OutputVoltage  
Normal Mode  
In Shutdown  
VILIMIT(NM) EN > 1.7V, RILIMIT = 250 kW  
2.9  
3
3.1  
400  
V
VILIMIT(SD)  
IILIMIT(NM)  
EN < 0.8V, IILIMIT = –100 µA  
EN > 1.7V, RILIMIT = 250 kW  
EN > 1.7V  
mV  
µA  
µA  
mV  
mV/µA  
V
Output Current, Normal Mode  
Maximum Output Current  
Current LimitThresholdVoltage  
Current Limit Setting Ratio  
DELAY Normal ModeVoltage  
DELAY OvercurrentThreshold  
Latch-Off DelayTime  
12  
60  
105  
VCL  
VCSREF VCSCOMP, RILIMIT = 250 kW  
VCL/IILIMIT  
125  
10.4  
3
1.8  
600  
145  
VDELAY(NM)  
VDELAY(OC)  
tDELAY  
2.9  
1.7  
3.1  
1.9  
V
µs  
RDELAY = 250 kW, CDELAY = 4.7 nF  
NOTES  
1All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).  
2Guaranteed by design, not tested in production.  
Specifications subject to change without notice.  
–2–  
REV. 0  
ADP3180  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
SOFT START  
Output Current, Soft-Start Mode  
Soft-Start DelayTime  
IDELAY(SS)  
tDELAY(SS)  
During Startup, DELAY < 2.8V  
RDELAY = 250 kW, CDELAY = 4.7 nF  
VID Code = 011111  
15  
20  
350  
25  
µA  
µs  
ENABLE INPUT  
Input LowVoltage  
Input HighVoltage  
Input Current, InputVoltage Low  
Input Current, InputVoltage High  
VIL(EN)  
VIH(EN)  
IIL(EN)  
IIH(EN)  
0.4  
V
V
µA  
µA  
0.8  
–1  
EN = 0V  
EN = 1.25V  
+1  
25  
10  
POWER GOOD COMPARATOR  
UndervoltageThreshold  
OvervoltageThreshold  
Output LowVoltage  
Power Good DelayTime  
VID Code Changing  
VID Code Static  
VPWRGD(UV) Relative to Nominal DAC Output  
VPWRGD(OV) Relative to Nominal DAC Output  
VOL(PWRGD) IPWRGD(SINK) = 4 mA  
–200  
+90  
–250  
+150  
+225  
–325  
+200  
+400  
mV  
mV  
mV  
100  
250  
200  
150  
550  
µs  
ns  
mV  
mV  
CrowbarTrip Point  
VCROWBAR  
tCROWBAR  
Relative to Nominal DAC Output  
Relative to FBRTN  
Overvoltage to PWM Going Low  
90  
450  
200  
650  
Crowbar Reset Point  
Crowbar DelayTime  
VID Code Changing  
VID Code Static  
100  
250  
400  
µs  
ns  
PWM OUTPUTS  
OutputVoltage Low  
OutputVoltage High  
VOL(PWM)  
VOH(PWM)  
IPWM(SINK) = 400 µA  
IPWM(SOURCE) = 400 µA  
160  
5.0  
500  
mV  
V
4.0  
SUPPLY  
DC Supply Current  
UVLOThresholdVoltage  
UVLO Hysteresis  
6
6.9  
0.9  
10  
7.3  
1.1  
mA  
V
V
VUVLO  
VCC Rising  
6.5  
0.7  
Specifications subject to change without notice.  
REV. 0  
–3–  
ADP3180  
ABSOLUTE MAXIMUM RATINGS*  
Junction to AirThermal Resistance (JA) . . . . . . . . . . . 100°C/W  
LeadTemperature (Soldering, 10 sec) . . . . . . . . . . . . . . . 300°C  
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C  
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C  
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +15V  
FBRTN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3V to +0.3V  
VID0–VID5, EN, DELAY, ILIMIT, CSCOMP, RT,  
PWM1–PWM4, COMP . . . . . . . . . . . . . . . . –0.3V to +5.5V  
SW1–SW4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –5V to +25V  
All Other Inputs and Outputs . . . . . . . . . –0.3V toVCC + 0.3V  
Operating AmbientTemperature Range . . . . . . . . 0°C to 85°C  
Operating JunctionTemperature . . . . . . . . . . . . . . . . . . . 125°C  
StorageTemperature Range . . . . . . . . . . . . . . –65°C to +150°C  
*Stresses above those listed underAbsolute Maximum Ratings may cause permanent  
damage to the device.This is a stress rating only; functional operation of the device  
at these or any other conditions above those listed in the operational sections of  
this specification is not implied. Exposure to absolute maximum rating conditions  
for extended periods may affect device reliability. Absolute maximum ratings apply  
individually only, not in combination. Unless otherwise specified, all other voltages  
are referenced to GND.  
ORDERING GUIDE  
Temperature  
Range  
Package  
Options  
Quantity  
per Reel  
Model  
ADP3180JRU-REEL7  
ADP3180JRU-REEL  
0°C to 85°C  
0°C to 85°C  
RU-28 (TSSOP-28)  
RU-28 (TSSOP-28)  
1000  
2500  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate  
on the human body and test equipment and can discharge without detection. Although the ADP3180  
features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high  
energy electrostatic discharges.Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
PIN CONFIGURATION  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VID4  
VID3  
VCC  
PWM1  
PWM2  
PWM3  
PWM4  
SW1  
3
VID2  
4
VID1  
5
VID0  
ADP3180  
6
VID5  
7
FBRTN  
FB  
SW2  
TOP VIEW  
(Not to Scale)  
8
SW3  
9
COMP  
PWRGD  
EN  
SW4  
10  
11  
12  
13  
14  
GND  
CSCOMP  
CSSUM  
CSREF  
ILIMIT  
DELAY  
RT  
RAMPADJ  
–4–  
REV. 0  
ADP3180  
PIN FUNCTION DESCRIPTIONS  
Pin No. Mnemonic  
Function  
1–6  
VID4–VID0, Voltage Identification DAC Inputs.These six pins are pulled up to an internal reference, providing a logic  
VID5  
one if left open.When in normal operation mode, the DAC output programs the FB regulation voltage from  
0.8375V to 1.6V. LeavingVID4 throughVID0 open results in the ADP3180 going into a “No CPU” mode,  
shutting off its PWM outputs.  
7
8
FBRTN  
FB  
Feedback Return.VID DAC and error amplifier reference for remote sensing of the output voltage.  
Feedback Input. Error amplifier input for remote sensing of the output voltage. An external resistor between  
this pin and the output voltage sets the no-load offset point.  
9
COMP  
Error Amplifier Output and Compensation Point  
10  
PWRGD  
Power Good Output. Open-drain output that pulls to GND when the output voltage is outside of the proper  
operating range.  
11  
12  
EN  
Power Supply Enable Input. Pulling this pin to GND disables the PWM outputs.  
DELAY  
Soft-Start Delay and Current Limit Latch-Off Delay Setting Input. An external resistor and capacitor connected  
between this pin and GND set the soft-start ramp-up time and the overcurrent latch-off delay time.  
13  
14  
15  
RT  
Frequency Setting Resistor Input. An external resistor connected between this pin and GND sets the  
oscillator frequency of the device.  
RAMPADJ  
ILIMIT  
PWM Ramp Current Input. An external resistor from the converter input voltage to this pin sets the  
internal PWM ramp.  
Current Limit Set Point/Enable Output. An external resistor from this pin to GND sets the current limit  
threshold of the converter.This pin is actively pulled low when the ADP3180 EN input is low or whenVCC is  
below its UVLO threshold to signal to the driver IC that the driver high side and low side outputs should go low.  
16  
CSREF  
Current Sense ReferenceVoltage Input.The voltage on this pin is used as the reference for the current sense  
amplifier and the Power Good and Crowbar functions.This pin should be connected to the common point  
of the output inductors.  
17  
18  
CSSUM  
Current Sense Summing Node. External resistors from each switch node to this pin sum the average  
inductor currents together to measure the total output current.  
CSCOMP  
Current Sense Compensation Point. A resistor and capacitor from this pin to CSSUM determine the slope  
of the load line and the positioning loop response time.  
19  
GND  
Ground. All internal biasing and the logic output signals of the device are referenced to this ground.  
20–23  
SW4–SW1  
Current Balance Inputs. Inputs for measuring the current level in each phase.The SW pins of unused  
phases should be left open.  
24–27  
28  
PWM4–  
PWM1  
Logic-Level PWM Outputs. Each output is connected to the input of an external MOSFET driver, such as  
the ADP3413 or ADP3418. Connecting the PWM3 and/or PWM4 outputs to GND will cause that phase  
to turn off, allowing the ADP3180 to operate as a 2-, 3-, or 4-phase controller.  
VCC  
SupplyVoltage for the Device.  
REV. 0  
–5–  
ADP3180–Typical Performance Characteristics  
4
3
2
1
0
5.3  
5.2  
5.1  
5.0  
4.9  
4.8  
4.7  
4.6  
T
= 25؇C  
A
4-PHASE OPERATION  
0
50  
100  
150  
200  
250  
300  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
R
VALUE – k⍀  
T
MASTER CLOCK FREQUENCY – MHz  
SEE EQUATION 1 FOR FREQUENCIES NOT ON THIS GRAPH  
TPC 2. Supply Current vs. Master Clock Frequency  
TPC 1. Master Clock Frequency vs. RT  
TEST CIRCUITS  
ADP3180  
28  
18  
12V  
VCC  
ADP3180  
CSCOMP  
CSSUM  
CSREF  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VID4  
VCC  
PWM1  
PWM2  
PWM3  
PWM4  
SW1  
12V  
+
1F  
100nF  
39k⍀  
100nF  
VID3  
17  
16  
19  
3
VID2  
6-BIT CODE  
1k⍀  
4
VID1  
5
VID0  
1.0V  
CSCOMP – 1V  
40  
V
=
OS  
6
VID5  
GND  
7
FBRTN  
FB  
SW2  
8
SW3  
Test Circuit 1. Current Sense Amplifier VOS  
9
COMP  
PWRGD  
EN  
SW4  
1k⍀  
ADP3180  
10  
11  
12  
13  
14  
GND  
28  
8
12V  
VCC  
1.25V  
CSCOMP  
CSSUM  
CSREF  
ILIMIT  
20k⍀  
100nF  
DELAY  
RT  
FB  
4.7nF  
250k⍀  
10k⍀  
RAMPADJ  
9
COMP  
250k⍀  
200k⍀  
CSCOMP  
18  
17  
16  
19  
100nF  
200k⍀  
V  
Test Circuit 3. Closed-Loop Output Voltage Accuracy  
CSSUM  
CSREF  
1.0V  
GND  
– FB  
V  
= FB  
FB  
V = 80mV  
V = 0mV  
Test Circuit 2. Positioning Voltage  
–6–  
REV. 0  
ADP3180  
Table I. OutputVoltage vs.VID Code  
VID4 VID3 VID2 VID1 VID0 VID5 VOUT(NOM) VID4 VID3 VID2 VID1 VID0 VID5 VOUT(NOM)  
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
0
0
1
1
1
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
1
0
0
1
1
0
0
X
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
No CPU  
0.8375V  
0.850V  
0.8625V  
0.875V  
0.8875V  
0.900V  
0.9125V  
0.925V  
0.9375V  
0.950V  
0.9625V  
0.975V  
0.9875V  
1.000V  
1.0125V  
1.025V  
1.0375V  
1.050V  
1.0625V  
1.075V  
1.0875V  
1.100V  
1.1125V  
1.125V  
1.1375V  
1.150V  
1.1625V  
1.175V  
1.1875V  
1.200V  
1.2125V  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.225V  
1.2375V  
1.250V  
1.2625V  
1.275V  
1.2875V  
1.300V  
1.3125V  
1.325V  
1.3375V  
1.350V  
1.3625V  
1.375V  
1.3875V  
1.400V  
1.4125V  
1.425V  
1.4375V  
1.450V  
1.4625V  
1.475V  
1.4875V  
1.500V  
1.5125V  
1.525V  
1.5375V  
1.550V  
1.5625V  
1.575V  
1.5875V  
1.600V  
X = Don't Care  
Ease of use and design due to independent component selection  
THEORY OF OPERATION  
The ADP3180 combines a multimode, fixed frequency PWM  
control with multiphase logic outputs for use in 2-, 3-, and  
4-phase synchronous buck CPU core supply power converters.  
The internal 6-bitVID DAC conforms to Intel’sVRD/VRM 10  
specifications. Multiphase operation is important for produc-  
ing the high currents and low voltages demanded by today’s  
microprocessors. Handling the high currents in a single-phase  
converter would place high thermal demands on the components  
in the system such as the inductors and MOSFETs.  
Flexibility in operation for tailoring design to low cost or high  
performance  
Number of Phases  
The number of operational phases and their phase relationship  
is determined by the internal circuitry that monitors the PWM  
outputs. Normally, the ADP3180 operates as a 4-phase PWM  
controller. Grounding the PWM4 pin programs 3-phase opera-  
tion, and grounding the PWM3 and PWM4 pins programs  
2-phase operation.  
The multimode control of the ADP3180 ensures a stable, high  
performance topology for:  
When the ADP3180 is enabled, the controller outputs a voltage  
on PWM3 and PWM4 that is approximately 550 mV. An inter-  
nal comparator checks each pin’s voltage versus a threshold of  
400 mV. If the pin is grounded, then it will be below the thresh-  
old and the phase will be disabled.The output resitance of the  
PWM pin is approximately 5 kW during this detection time. Any  
external pull-down resistance connected to the PWM pin should  
not be less than 25 kW to ensure proper operation.The phase  
detection is made during the first two clock cycles of the internal  
oscillator. After this time, if the PWM output was not grounded,  
the 5 kW resistance is removed and will switch between 0V and  
5V. If the PWM output was grounded, it will remain off.  
Balancing currents and thermals between phases  
High speed response at the lowest possible switching frequency  
and output decoupling  
Minimizing thermal switching losses due to lower frequency  
operation  
Tight load line regulation and accuracy  
High current output from having up to 4-phase operation  
Reduced output ripple due to multiphase cancellation  
PC board layout noise immunity  
REV. 0  
–7–  
ADP3180  
Active Impedance Control Mode  
The PWM outputs become logic-level devices once normal  
operation starts.The detection is normal and is intended for driv-  
ing external gate drivers, such as the ADP3418. Since each phase  
is monitored independently, operation approaching 100% duty  
cycle is possible. Also, more than one output can be on at a time  
for overlapping phases.  
For controlling the dynamic output voltage droop as a function  
of output current, a signal proportional to the total output cur-  
rent at the CSCOMP pin can be scaled to be equal to the droop  
impedance of the regulator times the output current.This droop  
voltage is then used to set the input control voltage to the system.  
The droop voltage is subtracted from the DAC reference input  
voltage directly to tell the error amplifier where the output volt-  
age should be.This differs from previous implementations and  
allows enhanced feed-forward response.  
Master Clock Frequency  
The clock frequency of the ADP3180 is set with an external  
resistor connected from the RT pin to ground.The frequency fol-  
lows the graph inTPC 1.To determine the frequency per phase,  
the clock is divided by the number of phases in use. If PWM4 is  
grounded, divide the master clock by 3 for the frequency of the  
remaining phases. If PWM3 and PWM4 are grounded, divide by 2.  
If all phases are in use, divide by 4.  
Current Control Mode andThermal Balance  
The ADP3180 has individual inputs that are used for monitoring  
the current in each phase.This information is combined with an  
internal ramp to create a current balancing feedback system that  
has been optimized for initial current balance accuracy and  
dynamic thermal balancing during operation.This current bal-  
ance information is independent of the average output current  
information used for positioning described previously.  
OutputVoltage Differential Sensing  
The ADP3180 combines differential sensing with a high accuracy  
VID DAC and reference and a low offset error amplifier to main-  
tain a worst-case specification of 10 mV differential sensing  
error with aVID input of 1.6000V over its full operating output  
voltage and temperature range.The output voltage is sensed between  
the FB and FBRTN pins. FB should be connected through a  
resistor to the regulation point, usually the remote sense pin of  
the microprocessor. FBRTN should be connected directly to the  
remote sense ground point.The internalVID DAC and precision  
reference are referenced to FBRTN, which has a minimal current  
of 90 µA to allow accurate remote sensing.The internal error  
amplifier compares the output of the DAC to the FB pin to regu-  
late the output voltage.  
The magnitude of the internal ramp can be set to optimize the  
transient response of the system. It also monitors the supply volt-  
age for feed-forward control for changes in the supply. A  
resistor connected from the power input voltage to the  
RAMPADJ pin determines the slope of the internal PWM ramp.  
Detailed information about programming the ramp is given in  
the Application Information section.  
External resistors can be placed in series with individual phases  
to create an intentional current imbalance if desired, such as  
when one phase may have better cooling and can support higher  
currents. Resistors RSW1 through RSW4 (see the typical application  
circuit in Figure 4) can be used for adjusting thermal balance. It  
is best to have the ability to add these resistors during the initial  
design, so make sure placeholders are provided in the layout.  
Output Current Sensing  
The ADP3180 provides a dedicated current sense amplifier  
(CSA) to monitor the total output current for proper voltage  
positioning versus load current and for current limit detection.  
Sensing the load current at the output gives the total average  
current being delivered to the load, which is an inherently more  
accurate method than peak current detection or sampling the  
current across a sense element such as the low side MOSFET.  
This amplifier can be configured several ways, depending on the  
objectives of the system:  
To increase the current in any given phase, make RSW for that  
phase larger (make RSW = 0 for the hottest phase and do not  
change during balancing). Increasing RSW to only 500 W will  
make a substantial increase in phase current. Increase each RSW  
value by small amounts to achieve balance, starting with the cool-  
est phase first.  
Output inductor ESR sensing without thermistor for lowest cost  
Voltage Control Mode  
A high gain-bandwidth voltage mode error amplifier is used for  
the voltage-mode control loop.The control input voltage to the  
positive input is set via theVID 6-bit logic code according to the  
voltages listed inTable I.This voltage is also offset by the droop  
voltage for active positioning of the output voltage as a function  
of current, commonly known as active voltage positioning.The  
output of the amplifier is the COMP pin, which sets the termina-  
tion voltage for the internal PWM ramps.  
Output inductor ESR sensing with thermistor for improved  
accuracy with tracking of inductor temperature  
Sense resistors for highest accuracy measurements  
The positive input of the CSA is connected to the CSREF pin,  
which is connected to the output voltage.The inputs to the  
amplifier are summed together through resistors from the sensing  
element (such as the switch node side of the output inductors)  
to the inverting input, CSSUM.The feedback resistor between  
CSCOMP and CSSUM sets the gain of the amplifier, and a filter  
capacitor is placed in parallel with this resistor.The gain of the  
amplifier is programmable by adjusting the feedback resistor to  
set the load line required by the microprocessor.The current  
information is then given as the difference of CSREF – CSCOMP.  
This difference signal is used internally to offset theVID DAC  
for voltage positioning and as a differential input for the current  
limit comparator.  
The negative input (FB) is tied to the output sense location with  
a resistor RB and is used for sensing and controlling the output  
voltage at this point. A current source from the FB pin flowing  
through RB is used for setting the no-load offset voltage from the  
VID voltage.The no-load voltage will be negative with respect to  
theVID DAC.The main loop compensation is incorporated into  
the feedback network between FB and COMP.  
Soft-Start  
The power-on ramp up time of the output voltage is set with a  
capacitor and resistor in parallel from the DELAY pin to ground.  
The RC time constant also determines the current limit latch-off  
time as explained in the following section. In UVLO or when  
To provide the best accuracy for the sensing of current, the CSA  
has been designed to have a low offset input voltage. Also, the  
sensing gain is determined by external resistors so that it can be  
made extremely accurate.  
–8–  
REV. 0  
ADP3180  
EN is a logic low, the DELAY pin is held at ground. After the  
UVLO threshold is reached and EN is a logic high, the DELAY  
capacitor is charged up with an internal 20 µA current source.  
The output voltage follows the ramping voltage on the DELAY  
pin, limiting the inrush current.The soft-start time depends on  
the values ofVID DAC and CDLY, with a secondary effect from  
RDLY. Refer to the Application Information section for detailed  
PWRGD. If the output voltage is within the PWRGD window,  
the controller resumes normal operation. However, if a short  
circuit has caused the output voltage to drop below the PWRGD  
threshold, a soft-start cycle is initiated.  
The latch-off function can be reset either by removing and reap-  
plyingVCC to the ADP3180 or by pulling the EN pin low for  
a short time.To disable the short circuit latch-off function, the  
external resistor to ground should be left open, and a high value  
(>1 MW) resistor should be connected from DELAY toVCC.  
This prevents the DELAY capacitor from discharging, so the  
1.8V threshold is never reached.The resistor will have an impact  
on the soft-start time because the current through it will add to  
the internal 20 µA current source.  
information on setting CDLY  
.
When the PWRGD threshold is reached, the soft-start cycle is  
stopped and the DELAY pin is pulled up to 3V. This ensures  
that the output voltage is at theVID voltage when the PWRGD  
signals to the system that the output voltage is good. If EN is  
taken low orVCC drops below UVLO, the DELAY capacitor is  
reset to ground to be ready for another soft-start cycle. Figure 1  
shows a typical start-up sequence for the ADP3180.  
Figure 2. Overcurrent Latch-Off Waveforms,  
Circuit of Figure 4.  
Channel 1–PWRGD, Channel 2–VOUT  
Channel 3–CSCOMP Pin of ADP3180,  
Channel 4–High Side MOSFET VGS  
,
Figure 1. Start-Up Waveforms, Circuit of Figure 5.  
Channel 1–PWRGD, Channel 2–VOUT  
,
Channel 3–High Side MOSFET VGS  
,
Channel 4–Low Side MOSFET VGS  
During startup when the output voltage is below 200 mV, a  
secondary current limit is active.This is necessary because the  
voltage swing of CSCOMP cannot go below ground.This sec-  
ondary current limit controls the internal COMP voltage to the  
PWM comparators to 2V. This will limit the voltage drop across  
the low side MOSFETs through the current balance circuitry.  
Current Limit, Short Circuit, and Latch-Off Protection  
The ADP3180 compares a programmable current limit set point  
to the voltage from the output of the current sense amplifier.The  
level of current limit is set with the resistor from the ILIMIT pin  
to ground. During normal operation, the voltage on ILIMIT is  
3V. The current through the external resistor is internally scaled  
to give a current limit threshold of 10.4 mV/µA. If the differ-  
ence in voltage between CSREF and CSCOMP rises above the  
current limit threshold, the internal current limit amplifier will  
control the internal COMP voltage to maintain the average out-  
put current at the limit.  
There is also an inherent per phase current limit that will protect  
individual phases in the case where one or more phases may stop  
functioning because of a faulty component.This limit is based on  
the maximum normal mode COMP voltage.  
DynamicVID  
The ADP3180 incorporates the ability to dynamically change the  
VID input while the controller is running.This allows the output  
voltage to change while the supply is running and supplying cur-  
rent to the load.This is commonly referred to asVID on-the-fly  
(OTF). AVID OTF can occur under either light load or heavy  
load conditions.The processor signals the controller by changing  
theVID inputs in multiple steps from the start code to the finish  
code.This change can be either positive or negative.  
After the limit is reached, the 3V pull-up on the DELAY pin is  
disconnected, and the external delay capacitor is discharged  
through the external resistor. A comparator monitors the DELAY  
voltage and shuts off the controller when the voltage drops below  
1.8V. The current limit latch-off delay time is therefore set by the  
RC time constant discharging from 3V to 1.8V. The Application  
Information section discusses the selection of CDLY and RDLY  
.
Because the controller continues to cycle the phases dur-  
When aVID input changes state, the ADP3180 detects the  
change and ignores the DAC inputs for a minimum of 400 ns.  
This time is to prevent a false code due to logic skew while the  
ing the latch-off delay time, if the short is removed before the  
1.8V threshold is reached, the controller will return to normal  
operation.The recovery characteristic depends on the state of  
REV. 0  
–9–  
ADP3180  
Output Enable and UVLO  
sixVID inputs are changing. Additionally, the firstVID change  
initiates the PWRGD and CROWBAR blanking functions for a  
minimum of 250 µs to prevent a false PWRGD or CROWBAR  
event. EachVID change will reset the internal timer. Figure 3  
showsVID on-the-fly performance when the output voltage is  
stepping up and the output current is switching between mini-  
mum and maximum values, which is the worst-case situation.  
The input supply (VCC) to the controller must be higher than  
the UVLO threshold and the EN pin must be higher than its  
logic threshold for the ADP3180 to begin switching. If UVLO is  
less than the threshold or the EN pin is a logic low, the ADP3180  
is disabled.This holds the PWM outputs at ground, shorts the  
DELAY capacitor to ground, and holds the ILIMIT pin at  
ground.  
In the application circuit, the ILIMIT pin should be connected  
to the OD pins of the ADP3418 drivers. Because ILIMIT is  
grounded, this disables the drivers such that both DRVH and  
DRVL are grounded.This feature is important to prevent dis-  
charging of the output capacitors when the controller is shut off.  
If the driver outputs were not disabled, a negative voltage could  
be generated on the output due to the high current discharge of  
the output capacitors through the inductors.  
APPLICATION INFORMATION  
The design parameters for a typical IntelVRD 10 compliant  
CPU application are as follows:  
Input voltage (VIN) = 12V  
VID setting voltage (VVID) = 1.500V  
Duty cycle (D) = 0.125  
Nominal output voltage at no load (VONL) = 1.480V  
Nominal output voltage at 65 A load (VOFL) = 1.3955V  
Figure 3. VID On-the-FlyWaveforms, Circuit of Figure 5.  
VID Change = 5 mV, 5 µs per Step, 50 Steps,  
I
OUT Change = 5 A to 65 A  
Static output voltage drop based on a 1.3 mW load line (RO)  
from no load to full load  
Power Good Monitoring  
The Power Good comparator monitors the output voltage via the  
CSREF pin.The PWRGD pin is an open-drain output whose  
high level (when connected to a pull-up resistor) indicates that  
the output voltage is within the nominal limits specified in the  
Specifications table based on theVID voltage setting. PWRGD  
will go low if the output voltage is outside of this specified range.  
PWRGD is blanked during aVID OTF event for a period of  
250 µs to prevent false signals during the time the output is  
changing.  
(VD) =VONL VOFL = 1.480V – 1.3955V = 84.5 mV  
Maximum Output Current (IO) = 65 A  
Maximum Output Current Step (DIO) = 60 A  
Number of Phases (n) = 3  
Switching frequency per phase (fSW) = 267 kHz  
Output Crowbar  
As part of the protection for the load and output components of  
the supply, the PWM outputs will be driven low (turning on the  
low side MOSFETs) when the output voltage exceeds the upper  
Power Good threshold.This crowbar action will stop once the  
output voltage has fallen below the release threshold of approxi-  
mately 450 mV.  
Turning on the low side MOSFETs pulls down the output as the  
reverse current builds up in the inductors. If the output overvolt-  
age is due to a short of the high side MOSFET, this action will  
current limit the input supply or blow its fuse, protecting the  
microprocessor from destruction.  
–10–  
REV. 0  
ADP3180  
L1  
1.6H  
470F/16V 
؋
 6  
Nichicon PW Series  
V
12V  
IN  
+
+
C9  
4.7F  
C1  
C6  
V
RTN  
IN  
U2  
C8  
ADP3418 100nF  
D1  
1N4148WS  
D2  
Q1  
IPD12N03L  
1
2
3
4
BST  
IN  
DRVH  
SW  
8
7
6
5
820F/2.5V 
؋
 8  
Fujitsu RE Series  
8mESR (each)  
1N4148WS  
L2  
600nH/1.6m⍀  
V
CC(CORE)  
0.8375V–1.6V  
OD  
PGND  
DRVL  
+
+
C10  
4.7nF  
R1  
65A AVG, 74A PK  
VCC  
C28  
C21  
C7  
4.7F  
V
CC(CORE) RTN  
2.2⍀  
Q3  
IPD06N03L  
Q2  
IPD06N03L  
10F 
؋
 23MLCC  
AROUND  
SOCKET  
C13  
C12  
U3  
4.7F  
ADP3418100nF  
D3  
1N4148WS  
Q4  
IPD12N03L  
1
2
3
4
BST  
DRVH  
8
7
6
5
L3  
IN  
SW  
600nH/1.6m⍀  
OD  
PGND  
DRVL  
C14  
4.7nF  
VCC  
C11  
R2  
2.2⍀  
4.7F  
Q6  
IPD06N03L  
Q5  
IPD06N03L  
C17  
4.7F  
U4  
ADP3418  
C16  
100nF  
D4  
1N4148WS  
Q7  
IPD12N03L  
BST  
DRVH  
1
2
3
4
8
7
6
5
L4  
IN  
SW  
PGND  
DRVL  
600nH/1.6m⍀  
OD  
C18  
4.7nF  
VCC  
R3  
2.2⍀  
C15  
R
TH  
4.7F  
100k, 5%  
Q9  
IPD06N03L  
Q8  
IPD06N03L  
+
R4  
10⍀  
C19  
1F  
C20  
33F  
U1  
ADP3180  
R
R
383k⍀  
VID4  
VID3  
VID2  
VID1  
VID0  
VID5  
FBRTN  
FB  
VCC  
PWM1  
PWM2  
1
2
3
4
5
6
7
8
9
28  
27  
26  
FROM CPU  
PWM3 25  
PWM4 24  
R
*
SW1  
SW1  
23  
R
*
SW2  
SW2 22  
SW3 21  
C
1.5nF  
B
R
*
SW3  
C
33pF  
FB  
R
PH1  
124k⍀  
R
PH3  
COMP  
SW4 20  
C
R
R
A
16.9k⍀  
124k⍀  
A
B
POWER  
GOOD  
390pF  
1.33k⍀  
R
PH2  
124k⍀  
10 PWRGD  
11 EN  
GND 19  
R
R
CS2  
C
CS1  
CS2  
1.5nF  
35.7k73.2k⍀  
ENABLE  
CSCOMP 18  
CSSUM 17  
CSREF 16  
ILIMIT 15  
12 DELAY  
13 RT  
C
CS1  
C
2.2nF  
DLY  
39nF  
R
DLY  
*SEE THEORY OF  
OPERATION  
390k⍀  
R
T
249k⍀  
14 RAMPADJ  
R
SECTION FOR  
DESCRIPTION  
OF OPTIONAL  
LIM  
200k⍀  
R
RESISTORS  
SW  
Figure 4. 65 A Intel Pentium® 4 CPU Supply Circuit, VRD 10 Design  
REV. 0  
11–  
ADP3180  
Setting the Clock Frequency  
Equation 5 can be used to determine the minimum inductance  
based on a given output ripple voltage:  
The ADP3180 uses a fixed-frequency control architecture.The  
frequency is set by an external timing resistor (RT).The clock  
frequency and the number of phases determine the switching  
frequency per phase, which relates directly to switching losses  
and the sizes of the inductors and input and output capacitors.  
With n = 3 for three phases, a clock frequency of 800 kHz sets  
the switching frequency of each phase, fSW, to 267 kHz, which  
represents a practical trade-off between the switching losses and  
the sizes of the output filter components.TPC 1 shows that to  
achieve an 800 kHz oscillator frequency, the correct value for RT  
is 249 kW. Alternatively, the value for RT can be calculated using:  
VVID × 1D  
(
)
(4)  
IR  
=
fSW × L  
VVID × R × 1n × D  
(
)
)
(
O
(5)  
L ≥  
fSW × VRIPPLE  
Solving Equation 5 for a 10 mV p-p output ripple voltage yields:  
1.5 V × 1.3 mΩ × 10.375  
(
)
L ≥  
= 456 nH  
1
267 kHz × 10 mV  
RT =  
1
(1)  
If the ripple voltage ends up less than that designed for, the  
inductor can be made smaller until the ripple value is met.This  
will allow optimal transient response and minimum output  
decoupling.  
n × f × 5.83 pF −  
(
)
SW  
1.5 MΩ  
where 5.83 pF and 1.5 MW are internal IC component values.  
For good initial accuracy and frequency stability, it is recom-  
mended to use a 1% resistor.  
The smallest possible inductor should be used to minimize the  
number of output capacitors. Choosing a 600 nH inductor is  
a good choice for a starting point and gives a calculated ripple  
current of 8.2 A.The inductor should not saturate at the peak  
current of 25.8 A and should be able to handle the sum of the  
power dissipation caused by the average current of 22.7 A in the  
winding and core loss.  
Soft-Start and Current Limit Latch-Off DelayTimes  
Because the soft-start and current limit latch-off delay functions  
share the DELAY pin, these two parameters must be considered  
together.The first step is to set CDLY for the soft-start ramp.This  
ramp is generated with a 20 µA internal current source.The value  
of RDLY will have a second order impact on the soft-start time  
because it sinks part of the current source to ground. However, as  
long as RDLY is kept greater than 200 kW, this effect is minor.The  
value for CDLY can be approximated using:  
Another important factor in the inductor design is the DCR,  
which is used for measuring the phase currents. A large DCR will  
cause excessive power losses, while too small a value will lead to  
increased measurement error. A good rule of thumb is to have the  
DCR be about 1 to 1½ times the droop resistance (RO). For our  
example, we are using an inductor with a DCR of 1.6 mW.  
VVID  
2 × RDLY  
tSS  
VVID  
CDLY = 20 µA −  
×
(2)  
where tSS is the desired soft-start time. Assuming an RDLY of  
390 kW and a desired a soft-start time of 3 ms, CDLY is 36 nF.  
The closest standard value for CDLY is 39 nF. Once CDLY has been  
chosen, RDLY can be calculated for the current limit latch-off  
time using:  
Designing an Inductor  
Once the inductance and DCR are known, the next step is to  
either design an inductor or find a standard inductor that comes  
as close as possible to meeting the overall design goals. It is also  
important to have the inductance and DCR tolerance specified  
to control the accuracy of the system. 15% inductance and 8%  
DCR (at room temperature) are reasonable tolerances that most  
manufacturers can meet.  
1.96 × tDELAY  
RDLY  
=
(3)  
CDLY  
The first decision in designing the inductor is to choose the core  
material.There are several possibilities for providing low core  
loss at high frequencies.Two examples are the powder cores (e.g.,  
Kool-Mµ® from Magnetics, Inc. or Micrometals) and the gapped  
soft ferrite cores (e.g., 3F3 or 3F4 from Philips). Low frequency  
powdered iron cores should be avoided due to their high core  
loss, especially when the inductor value is relatively low and the  
ripple current is high.  
If the result for RDLY is less than 200 kW, a smaller soft-start time  
should be considered by recalculating the equation for CDLY, or a  
longer latch-off time should be used. In no case should RDLY be  
less than 200 kW. In this example, a delay time of 8 ms gives  
RDLY = 402 kW. The closest standard 5% value is 390 kW.  
Inductor Selection  
The choice of inductance for the inductor determines the ripple  
current in the inductor. Less inductance leads to more ripple cur-  
rent, which increases the output ripple voltage and conduction  
losses in the MOSFETs, but allows using smaller inductors and,  
for a specified peak-to-peak transient deviation, less total output  
capacitance. Conversely, a higher inductance means lower ripple  
current and reduced conduction losses but requires larger  
inductors and more output capacitance for the same peak-to-  
peak transient deviation. In any multiphase converter, a practical  
value for the peak-to-peak inductor ripple current is less than  
50% of the maximum dc current in the same inductor. Equation 4  
shows the relationship between the inductance, oscillator fre-  
quency, and peak-to-peak ripple current in the inductor.  
The best choice for a core geometry is a closed-loop type, such  
as a pot core, PQ, U, and E core, or toroid. A good compromise  
between price and performance is a core with a toroidal shape.  
There are many useful references for quickly designing a power  
inductor, such as:  
Magnetics Design References  
Magnetic Designer Software  
Intusoft (www.intusoft.com)  
Designing Magnetic Components for High-Frequency DC-DC  
Converters, byWilliamT. McLyman, Kg Magnetics, Inc.  
ISBN 1883107008  
–12–  
REV. 0  
ADP3180  
Selecting a Standard Inductor  
Inductor DCRTemperature Correction  
The companies listed below can provide design consultation and  
deliver power inductors optimized for high power applications  
upon request.  
With the inductor’s DCR being used as the sense element and  
copper wire being the source of the DCR, one needs to com-  
pensate for temperature changes of the inductor’s winding.  
Fortunately, copper has a well known temperature coefficient  
(TC) of 0.39%/°C.  
Power Inductor Manufacturers  
Coilcraft  
(847)639-6400  
www.coilcraft.com  
If RCS is designed to have an opposite and equal percentage  
change in resistance to that of the wire, it will cancel the tempera-  
ture variation of the inductor’s DCR. Due to the nonlinear nature  
of NTC thermistors, resistors RCS1 and RCS2 are needed (see  
Figure 5) to linearize the NTC and produce the desired tempera-  
ture tracking.  
Coiltronics  
(561)752-5000  
www.coiltronics.com  
Sumida Electric Company  
(510) 668-0660  
www.sumida.com  
PLACE AS CLOSE AS POSSIBLE  
TO NEAREST INDUCTOR  
TO  
TO  
OUT  
OR LOW SIDE MOSFET  
SWITCH  
NODES  
V
R
SENSE  
TH  
Vishay Intertechnology  
(402) 563-6866  
www.vishay.com  
R
R
R
PH3  
PH1  
PH2  
ADP3180  
R
R
CS2  
Output Droop Resistance  
CS1  
CSCOMP  
CSSUM  
CSREF  
18  
17  
16  
The design requires that the regulator output voltage measured  
at the CPU pins drops when the output current increases. The  
specified voltage drop corresponds to a dc output resistance (RO).  
C
1.8nF  
CS  
KEEP THIS PATH  
AS SHORT AS POSSIBLE  
AND WELL AWAY FROM  
SWITCH NODE LINES  
The output current is measured by summing together the voltage  
across each inductor and passing the signal through a low-pass  
filter.This summer filter is the CS amplifier configured with  
resistors RPH(X) (summers), and RCS and CCS (filter).The output  
resistance of the regulator is set by the following equations, where  
RL is the DCR of the output inductors:  
Figure 5.Temperature Compensation Circuit Values  
The following procedure and expressions will yield values to use  
for RCS1, RCS2, and RTH (the thermistor value at 25°C) for a given  
RCS value.  
RCS  
RO =  
× RL  
(6)  
RPH  
X
(
)
1. Select an NTC to be used based on type and value. Since  
we do not have a value yet, start with a thermistor with a  
value close to RCS. The NTC should also have an initial  
tolerance of better than 5%.  
L
CCS  
=
(7)  
RL × RCS  
One has the flexibility of choosing either RCS or RPH(X). It is best  
to select RCS equal to 100 kW, and then solve for RPH(X) by rear-  
ranging Equation 6.  
2. Based on the type of NTC, find its relative resistance value  
at two temperatures. The temperatures that work well  
are 50°C and 90°C. We will call these resistance values  
A (RTH(50°C)/RTH(25°C)) and B (RTH(90°C)/RTH(25°C)). Note that  
the NTC’s relative value is always 1 at 25°C.  
RL  
RO  
RPH  
RPH  
=
=
× RCS  
X
X
(
)
3. Find the relative value of RCS required for each of these  
temperatures.This is based on the percentage change need-  
ed, which we will initially make 0.39%/°C.We will call these  
r1 (1/(1+TC ϫ (T1 – 25))) and r2 (1/(1 +TC ϫ (T2 – 25))),  
where TC = 0.0039, T1 = 50°C and T2 = 90°C.  
1.6 mΩ  
1.3 mΩ  
× 100 kΩ = 123 kΩ  
(
)
Next, use Equation 6 to solve for CCS:  
600 nH  
CCS  
=
= 3.75 nF  
4. Compute the relative values for RCS1, RCS2, and RTH using:  
A B × r × r A × 1B × r + B × 1A × r  
1.6 mΩ × 100 kΩ  
(
)
(
)
(
)
)
1
2
2
1
RCS2  
=
It is best to have a dual location for CCS in the layout so standard  
values can be used in parallel to get as close to the value desired.  
For this example, choosing CCS to be a 1.5 nF and 2.2 nF in  
parallel is a good choice. For best accuracy, CCS should be a 5%  
or 10% NPO capacitor. The closest standard 1% value for RPH(X)  
is 124 kW.  
A × 1B × r B × 1A × r A B  
(
)
(
)
(
1
2
1A  
(
)
RCS1  
=
1
A
(8)  
1RCS2 r RCS2  
1
1
RTH  
=
1
1
1RCS2 RCS1  
REV. 0  
–13–  
ADP3180  
5. Calculate RTH = RTH ϫ RCS, then select the closest value of  
thermistor available. Also compute a scaling factor k based  
on the ratio of the actual thermistor value used relative to the  
computed one:  
CX (  
MAX  
)
VVID nKRO 2  
L
VV  
×
×
1+ tV  
×
1 C  
Z (13)  
nK2RO2  
VVID  
VV  
L
RTH  
ACTUAL  
(
)
k =  
(9)  
VVERR  
RTH CALCULATED  
(
)
where K = − ln  
VV  
6. Finally, calculate values for RCS1 and RCS2 using  
To meet the conditions of these expressions and transient  
Equation 10:  
response, the ESR of the bulk capacitor bank (RX) should be less  
than two times the droop resistance, RO. If the CX(MIN) is larger  
than CX(MAX), the system will not meet theVID on-the-fly speci-  
fication and may require the use of a smaller inductor or more  
phases (and may have to increase the switching frequency to keep  
the output ripple the same).  
RCS1 = RCS × k × rCS1  
(10)  
RCS2 = RCS × 1k + k × r  
(
)
(
)
)
(
CS2  
For this example, RCS has been chosen to be 100 kW, so we start  
with a thermistor value of 100 kW. Looking through available  
0603 size thermistors, we find aVishay NTHS0603N01N1003JR  
NTC thermistor with A = 0.3602 and B = 0.09174. From these  
we compute RCS1 = 0.3796, RCS2 = 0.7195 and RTH = 1.0751.  
Solving for RTH yields 107.51 kW, so we choose 100 kW, making  
k = 0.9302. Finally, we find RCS1 and RCS2 to be 35.3 kW and  
73.9 kW. Choosing the closest 1% resistor values yields a choice  
of 35.7 kW and 73.2 kW.  
For our example, 23 10 µF 1206 MLC capacitors (CZ = 230 µF)  
were used.TheVID on-the-fly step change is 250 mV in 150 µs  
with a setting error of 2.5 mV. Solving for the bulk capacitance  
yields:  
600 nH × 60 A  
3 × 1.3 mΩ × 1.5 V  
CX ( MIN  
230 µF = 5.92 mF  
)
600 nH × 250 mV  
Output Offset  
CX ( MAX  
×
)
3 × 4.62 × (1.3 m)2 × 1.5 V  
Intel’s specification requires that at no load the nominal output  
voltage of the regulator be offset to a lower value than the nomi-  
nal voltage corresponding to theVID code.The offset is set by a  
constant current source flowing out of the FB pin (IFB) and flow-  
ing through RB. The value of RB can be found using Equation 11:  
150 µs × 1.5 V × 3 × 4.6 × 1.3 mΩ  2  
1+  
1 230 µF  
250 mV × 600 nH  
= 23.9 mF  
VVID VONL  
RB =  
where
K
=
4.6  
Using eight 820 µF A1-Polys with a typical ESR of 8 mW, each  
yields CX = 6.56 mF with an RX = 1.0 mW.  
IFB  
(11)  
1.5 V 1.480 V  
RB =  
= 1.33 kΩ  
15 µA  
One last check should be made to ensure that the ESL of the  
bulk capacitors (LX) is low enough to limit the initial high fre-  
quency transient spike.This is tested using:  
The closest standard 1% resistor value is 1.33 kW.  
COUT Selection  
The required output decoupling for the regulator is typically  
recommended by Intel for various processors and platforms. One  
can also use some simple design guidelines to determine what  
is required.These guidelines are based on having both bulk and  
ceramic capacitors in the system.  
LX CZ × RO2  
LX 230 µF × (1.3 m)2 = 389 pH  
(14)  
In this example, LX is 375 pH for the eight A1-Polys capacitors,  
which satisfies this limitation. If the LX of the chosen bulk capaci-  
tor bank is too large, the number of capacitors must be increased.  
The first thing is to select the total amount of ceramic capaci-  
tance.This is based on the number and type of capacitor to be  
used.The best location for ceramics is inside the socket, with 12  
to 18 of size 1206 being the physical limit. Others can be placed  
along the outer edge of the socket as well.  
One should note for this multimode control technique, all  
ceramic designs can be used as long as the conditions of  
Equations 11, 12, and 13 are satisfied.  
Power MOSFETs  
Combined ceramic values of 200 µF–300 µF are recommended,  
usually made up of multiple 10 µF or 22 µF capacitors. Select the  
number of ceramics and find the total ceramic capacitance (CZ).  
For this example, the N-channel power MOSFETs have been  
selected for one high side switch and two low side switches per  
phase.The main selection parameters for the power MOSFETs  
areVGS(TH), QG, CISS, CRSS, and RDS(ON). The minimum gate drive  
voltage (the supply voltage to the ADP3418) dictates whether  
standard threshold or logic-level threshold MOSFETs must be  
used.WithVGATE ~10V, logic-level threshold MOSFETs (VGS(TH)  
< 2.5V) are recommended.  
Next, there is an upper limit imposed on the total amount of bulk  
capacitance (CX) when one considers theVID on-the-fly voltage  
stepping of the output (voltage step VV in time tV with error of  
V
ERR) and a lower limit based on meeting the critical capacitance  
for load release for a given maximum load step DIO:  
L × ∆IO  
The maximum output current IO determines the RDS(ON)  
requirement for the low side (synchronous) MOSFETs.With  
the ADP3180, currents are balanced between phases, thus the  
current in each low side MOSFET is the output current divided  
by the total number of MOSFETs (nSF).With conduction losses  
CX (  
CZ  
(12)  
MIN  
)
n × R × V  
O
VID  
–14–  
REV. 0  
ADP3180  
being dominant, the following expression shows the total power  
being dissipated in each synchronous MOSFET in terms of  
the ripple current per phase (IR) and average total output cur-  
rent (IO);  
1.5W for a single D-PAK) when combining the switching and  
conduction losses.  
For our example, we have selected an Infineon IPD12N03L as  
the main MOSFET (three total; nMF = 3), with a CISS = 1460 pF  
(max) and RDS(MF) = 14 mW (max atTJ = 120ºC) and an Infineon  
IPD06N03L as the synchronous MOSFET (six total; nSF = 6),  
with CISS = 2370 pF (max) and RDS(SF) = 8.4 mW (max atTJ =  
120ºC).The synchronous MOSFET CISS is less than 3000 pF,  
satisfying that requirement. Solving for the power dissipation per  
MOSFET at IO = 65 A and IR = 8.2 A yields 863 mW for each  
synchronous MOSFET and 1.44W for each main MOSFET.  
These numbers work well considering there is usually more PCB  
area available for each main MOSFET versus each synchronous  
MOSFET.  
IO 2  
1
12  
n × IR   
nSF  
   
2   
PSF = 1D ×  
+
×
× RDS SF  
(15)  
(
)
(
)
n
SF  
Knowing the maximum output current being designed for and  
the maximum allowed power dissipation, one can find the  
required RDS(ON) for the MOSFET. For D-PAK MOSFETs up to  
an ambient temperature of 50ºC, a safe limit for PSF is 1W–1.5W  
at 120ºC junction temperature.Thus, for our example (65 A  
maximum), we find RDS(SF) (per MOSFET) < 8.7 mW. This  
RDS(SF) is also at a junction temperature of about 120ºC, so we  
need to make sure we account for this when making this selec-  
tion. For our example, we selected two lower side MOSFETs  
at 7 mW each at room temperature, which gives 8.4 mW at high  
temperature.  
One last thing to look at is the power dissipation in the driver  
for each phase.This is best described in terms of the QG for the  
MOSFETs and is given by the following, where QGMF is the total  
gate charge for each main MOSFET and QGSF is the total gate  
charge for each synchronous MOSFET:  
Another important factor for the synchronous MOSFET is the  
input capacitance and feedback capacitance.The ratio of the  
feedback to input needs to be small (less than 10% is recom-  
mended) to prevent accidental turn-on of the synchronous  
MOSFETs when the switch node goes high.  
fSW  
(18)  
PDRV  
=
× n × QGMF + nSF × QGSF + I  
× VCC  
(
)
MF  
CC  
2 × n  
Also shown is the standby dissipation factor (ICC times the VCC  
for the driver. For the ADP3418, the maximum dissipation  
)
Also, the time to switch the synchronous MOSFETs off should  
not exceed the non overlap dead time of the MOSFET driver  
(40 ns typical for the ADP3418).The output impedance of the  
driver is about 2 W and the typical MOSFET input gate resis-  
tances are about 1 W–2 W, so a total gate capacitance of less than  
6000 pF should be adhered to. Since there are two MOSFETs in  
parallel, we should limit the input capacitance for each synchro-  
nous MOSFET to 3000 pF.  
should be less than 400 mW. For our example, with ICC = 7 mA,  
GMF = 22.8 nC, and QGSF = 34.3 nC, we find 260 mW in each  
Q
driver, which is below the 400 mW dissipation limit. See the  
ADP3418 data sheet for more details.  
Ramp Resistor Selection  
The ramp resistor (RR) is used for setting the size of the internal  
PWM ramp.The value of this resistor is chosen to provide the  
best combination of thermal balance, stability, and transient  
response.The following expression is used for determining the  
optimum value:  
The high side (main) MOSFET has to be able to handle two  
main power dissipation components: conduction and switching  
losses.The switching loss is related to the amount of time it takes  
for the main MOSFET to turn on and off and to the current and  
voltage that are being switched. Basing the switching speed on  
the rise and fall time of the gate driver impedance and MOSFET  
input capacitance, the following expression provides an approxi-  
mate value for the switching loss per main MOSFET, where nMF  
is the total number of main MOSFETs:  
AR × L  
RR =  
3 × AD × RDS × CR  
(19)  
0.2 × 600 nH  
3 × 5 × 4.2 mΩ × 5 pF  
RR =  
= 381 kΩ  
where AR is the internal ramp amplifier gain, AD is the current  
balancing amplifier gain, RDS is the total low side MOSFET ON  
resistance, and CR is the internal ramp capacitor value.The clos-  
est standard 1% resistor value is 383 kW.  
VCC × IO  
nMF  
n
PS( MF = 2 × fSW  
×
× RG ×  
× CISS  
(16)  
)
nMF  
Here, RG is the total gate resistance (2 W for the ADP3418 and  
about 1 W for typical high speed switching MOSFETs, making  
RG = 3 W) and CISS is the input capacitance of the main MOS-  
FET. It is interesting to note that adding more main MOSFETs  
(nMF) does not really help the switching loss per MOSFET since  
the additional gate capacitance slows down switching.The best  
thing to reduce switching loss is to use lower gate capacitance  
devices.  
The internal ramp voltage magnitude can be calculated using:  
A × 1D × V  
RR × CR × fSW  
(
)
R
VID  
VR =  
VR =  
(20)  
0.2 × 10.125 × 1.5 V  
(
)
= 0.51 V  
383 kΩ × 5 pF × 267 kHz  
The size of the internal ramp can be made larger or smaller. If  
it is made larger, stability and transient response will improve,  
but thermal balance will degrade. Likewise, if the ramp is made  
smaller, thermal balance will improve at the sacrifice of transient  
response and stability.The factor of three in the denominator of  
Equation 19 sets a ramp size that gives an optimal balance for  
good stability, transient response, and thermal balance.  
The conduction loss of the main MOSFET is given by the fol-  
lowing, where RDS(MF) is the ON resistance of the MOSFET:  
IO 2  
1
12  
n × IR   
nMF  
   
2   
PC(  
= D ×  
+
×
× RDS MF  
(17)  
MF  
)
(
)
n
MF  
Typically, for main MOSFETs, one wants the highest speed (low  
CISS) device, but these usually have higher ON resistance. One  
must select a device that meets the total power dissipation (about  
REV. 0  
–15–  
ADP3180  
COMP Pin Ramp  
This limit can be adjusted by changing the ramp voltage VR. But  
make sure not to set the per phase limit lower than the average  
per phase current (ILIM/n).  
There is a ramp signal on the COMP pin due to the droop volt-  
age and output voltage ramps.This ramp amplitude adds to the  
internal ramp to produce the following overall ramp signal at the  
PWM input.  
There is also a per phase initial duty cycle limit determined by:  
VCOMP  
VBIAS  
MAX  
(
)
VR  
(24)  
DMAX = D ×  
VRT  
=
VRT  
2 × 1n × D  
(
)
(21)  
1−  
For this example, the maximum duty cycle is found to be 0.42.  
n × fSW × CX × RO  
Feedback Loop Compensation Design  
For this example, the overall ramp signal is found to be 0.63V.  
Optimized compensation of the ADP3180 allows the best pos-  
sible response of the regulator’s output to a load change.The  
basis for determining the optimum compensation is to make the  
regulator and output decoupling appear as an output imped-  
ance that is entirely resistive over the widest possible frequency  
range, including dc, and equal to the droop resistance (RO).With  
the resistive output impedance, the output voltage will droop in  
proportion with the load current at any load current slew rate;  
this ensures the optimal positioning and allows the minimization  
of the output decoupling.  
Current Limit Set Point  
To select the current limit set point, we need to find the resistor  
value for RLIM. The current limit threshold for the ADP3180 is set  
with a 3V source (VLIM) across RLIM with a gain of 10.4 mV/µA  
(ALIM). RLIM can be found using the following:  
ALIM × VLIM  
ILIM × RO  
RLIM  
=
(22)  
For values of RLIM greater than 500 kW, the current limit may be  
lower than expected, so some adjustment of RLIM may be needed.  
Here, ILIM is the average current limit for the output of the sup-  
ply. For our example, choosing 120 A for ILIM, we find RLIM to be  
200 kW, for which we chose 200 kW as the nearest 1% value.  
With the multimode feedback structure of the ADP3180, one  
needs to set the feedback compensation to make the converter’s  
output impedance working in parallel with the output decoupling  
meet this goal.There are several poles and zeros created by the  
output inductor and decoupling capacitors (output filter) that  
need to be compensated for.  
The per phase current limit described earlier has its limit deter-  
mined by the following:  
A type-three compensator on the voltage feedback is adequate for  
proper compensation of the output filter.The expressions given  
in Equations 25–29 are intended to yield an optimal starting  
point for the design; some adjustments may be necessary to  
account for PCB and component parasitic effects (See theTuning  
Procedure for the ADP3180 section).  
VCOMP  
VR VBIAS  
IR  
2
MAX  
(
)
IPHLIM  
(23)  
AD × RDS MAX  
(
)
For the ADP3180, the maximum COMP voltage (VCOMP(MAX)) is  
3.3V, the COMP pin bias voltage (VBIAS) is 1.2V, and the cur-  
rent balancing amplifier gain (AD) is 5. Using VR of 0.63V and  
The first step is to compute the time constants for all of the poles  
and zeros in the system:  
R
DS(MAX) of 4.2 mW (low side ON resistance at 150°C), we find a  
per phase limit of 66 A.  
2 × L × 1n × D × V  
RL × VRT  
VVID  
(
)
RT  
RE = n × RO + AD × RDS  
+
+
n × CX × RO × VVID  
(25)  
2 × 600 nH × 10.375 × 0.63 V  
3 × 6.56 mF × 1.3 mΩ × 1.5 V  
1.6 mΩ × 0.63 V  
1.5 V  
(
)
RE = 3 × 1.3 mΩ + 5 × 4.2 mΩ +  
+
= 37.9 mΩ  
LX RO R'  
375 pH 1.3 mΩ − 0.6 mΩ  
TA = CX × R R' +  
×
= 6.56 mF × 1.3 mΩ − 0.6 mΩ +  
×
= 4.79 µs  
(26)  
(27)  
(28)  
(
)
(
)
O
RO  
RX  
1.3 mΩ  
1.0 mΩ  
T = R + R'RO × C = 1.0 mΩ + 0.6 mΩ − 1.3 mΩ × 6.56 mF = 1.97 µs  
(
)
(
)
B
X
X
AD × RDS  
2 × fSW  
5 × 4.2 mΩ   
VRT × L −  
0.63 V × 600 nH −  
2 × 267 kHz  
TC =  
=
= 6.2 µs  
VVID × RE  
CX × CZ × RO2  
CX × R R' + C × RO 6.56 mF × 1.3 mΩ − 0.6 mΩ + 230 µF × 1.3 mΩ  
1.5 V × 37.9 mΩ  
6.56 mF × 230 µF × (1.3 m)2  
TD  
=
=
= 521 ns  
(29)  
(
)
(
)
O
Z
The compensation values can then be solved using the following:  
where, for the ADP3180, R' is the PCB resistance from the  
bulk capacitors to the ceramics and where RDS is the total low  
side MOSFET ON resistance per phase. For this example, AD  
is 5, VRT equals 0.63V, R' is approximately 0.6 mW (assuming  
a 4-layer motherboard), and LX is 375 pH for the eight Al-Poly  
capacitors.  
n × RO × TA  
RE × RB  
CA  
CA  
=
=
(30)  
3 × 1.3 mΩ × 4.79 µs  
37.9 mΩ × 1.33 kΩ  
= 371 pF  
–16–  
REV. 0  
ADP3180  
maximum of 0.1 A/µs, an additional small inductor (L > 1 µH @  
15 A) should be inserted between the converter and the supply  
bus.That inductor also acts as a filter between the converter and  
the primary power source.  
TC  
6.2 µs  
RA =  
=
= 16.7 kΩ  
= 1.48 nF  
= 31.2 pF  
(31)  
(32)  
(33)  
CA 371 pF  
TB 1.97 µs  
RB 1.33 kΩ  
CB  
=
=
V
VFLCOLD  
VFLHOT  
(
)
NL  
RCS2 NEW = RCS2 OLD  
×
(35)  
(
)
(
)
V
(
)
NL  
TD 521 ns  
RA 16.7 kΩ  
CFB  
=
=
100  
80  
60  
40  
20  
0
Choosing the closest standard values for these components yields:  
CA = 390 pF, RA = 16.9 kW, CB = 1.5 nF, and CFB = 33 pF.  
Figure 6 shows the typical transient response using the compen-  
sation values.  
0
10  
20  
30  
40  
50  
60  
OUTPUT CURRENT – A  
Figure 7. Efficiency of the Circuit of Figure 4  
vs. Output Current  
TUNING PROCEDURE FORTHE ADP3180  
1. Build circuit based on compensation values computed from  
design spreadsheet.  
2. Hook up dc load to circuit, turn on and verify operation.  
Also check for jitter at no-load and full-load.  
Figure 6.TypicalTransient Response for Design Example  
DC Loadline Setting  
CIN Selection and Input Current di/dt Reduction  
3. Measure output voltage at no-load (VNL).Verify it is within  
tolerance.  
In continuous inductor-current mode, the source current of the  
high side MOSFET is approximately a square wave with a duty  
ratio equal to n ϫ VOUT/VIN and an amplitude of one-nth of the  
maximum output current.To prevent large voltage transients,  
a low ESR input capacitor sized for the maximum rms current  
must be used.The maximum rms capacitor current is given by:  
4. Measure output voltage at full-load cold (VFLCOLD). Let  
board set for ~10 minutes at full-load and measure output  
(VFLHOT). If there is a change of more than a couple of mil-  
livolts, adjust RCS1 and RCS2 using Equations 35 and 37.  
5. Repeat Step 4 until cold and hot voltage measurements  
remain the same.  
1
ICRMS = D × IO ×  
1  
N × D  
(34)  
6. Measure output voltage from no-load to full-load using 5 A  
steps. Compute the loadline slope for each change and then  
average to get overall loadline slope (ROMEAS).  
1
ICRMS = 0.125× 65 A ×  
1 = 10.5 A  
3 × 0.125  
Note that the capacitor manufacturer’s ripple current ratings are  
often based on only 2,000 hours of life.This makes it advisable  
to further derate the capacitor or to choose a capacitor rated at  
a higher temperature than required. Several capacitors may be  
placed in parallel to meet size or height requirements in the  
design. In this example, the input capacitor bank is formed by  
three 2200 µF, 16V Nichicon capacitors with a ripple current  
rating of 3.5 A each.  
7. If ROMEAS is off from RO by more than 0.05 mW, use the fol-  
lowing to adjust the RPH values:  
ROMEAS  
RO  
RPH  
= RPH OLD ×  
(36)  
NEW  
(
)
(
)
8. Repeat Steps 6 and 7 to check loadline and repeat adjust-  
ments if necessary.  
To reduce the input-current di/dt to below the recommended  
9. Once complete with dc loadline adjustment, do not change  
RPH, RCS1, RCS2, or RTH for rest of procedure.  
1
RCS2 NEW  
=
(
)
RCS1 OLD + RTH 25°C  
1
(
)
(
)
(37)  
RTH 25°C  
RCS1 OLD × RTH 25°C + R  
RCS2 NEW × R  
RTH 25°C  
(
)
(
)
(
)
CS2 OLD  
CS1 OLD  
(
)
(
)
(
)
(
)
(
)
(
)
REV. 0  
–17–  
ADP3180  
10. Measure output ripple at no-load and full-load with scope  
and make sure it is within spec.  
form that may have two overshoots and one minor undershoot  
(see Figure 9). Here,VDROOP is the final desired value.  
AC Loadline Setting  
11. Remove dc load from circuit and hook up dynamic load.  
12. Hook up scope to output voltage and set to dc coupling  
with time scale at 100 µs/div.  
V
DROOP  
13. Set dynamic load for a transient step of about 40 A at 1 kHz  
with 50% duty cycle.  
14. Measure output waveform (may have to use dc offset on  
scope to see waveform).Try to use vertical scale of  
100 mV/div or finer.  
V
TRAN1  
V
TRAN2  
15. You will see a waveform that looks something like Figure 8.  
Use the horizontal cursors to measureVACDRP andVDCDRP  
as shown. DO NOT MEASURETHE UNDERSHOOT  
OR OVERSHOOTTHAT HAPPENS IMMEDIATELY  
AFTERTHE STEP.  
Figure 9. Transient Setting Waveform  
20. If both overshoots are larger than desired, try making the  
following adjustments in this order. (NOTE: If these adjust-  
ments do not change the response, you are limited by the  
output decoupling.) Check the output response each time  
you make a change as well as the switching nodes (to make  
sure it is still stable).  
V
ACDRP  
a. Make ramp resistor larger by 25% (RRAMP).  
V
b. ForVTRAN1, increase CB or increase switching frequency.  
c. ForVTRAN2, increase RA and decrease CA by 25%.  
DCDRP  
21. For load release (see Figure 10), if VTRANREL is larger than  
VTRAN1 (see Figure 9), you do not have enough output  
capacitance.You will either need more capacitance or to  
make the inductor values smaller (if you change inductors,  
you need to start the design over using the spreadsheet and  
this tuning procedure).  
Figure 8. AC Loadline Waveform  
16. If theVACDRP andVDCDRP are different by more than a  
couple of millivolts, use Equation 38 to adjust CCS.You may  
need to parallel different values to get the right one since  
there are limited standard capacitor values available (it is a  
good idea to have locations for two capacitors in the layout  
for this).  
V
TRANREL  
V
DROOP  
VACDRP  
VDCDRP  
CCS NEW = CCS OLD  
×
(38)  
(
)
(
)
17. Repeat Steps 11 to 13 and repeat adjustments if necessary.  
Once complete, do not change CCS for the rest of the  
procedure.  
18. Set dynamic load step to maximum step size (do not use a  
step size larger than needed) and verify that the output wave-  
form is square (which meansVACDRP andVDCDRP are equal).  
Figure 10. Transient Setting Waveform  
NOTE: MAKE SURE LOAD STEP SLEW RATE AND  
TURN-ON ARE SET FOR A SLEW RATE OF  
~150–250 A/µs (for example, a load step of 50 A should take  
200 ns–300 ns)WITH NO OVERSHOOT. Some dynamic  
loads will have an excessive turn-on overshoot if a minimum  
current is not set properly (this is an issue if using aVTT tool).  
Since the ADP3180 turns off all of the phases (switches inductors  
to ground), there is no ripple voltage present during load release.  
Thus, you do not have to add headroom for ripple, allowing your  
load releaseVTRANREL to be larger thanVTRAN1 by that amount  
and still be meeting spec.  
If VTRAN1 andVTRANREL are less than the desired final droop, this  
implies that capacitors can be removed.When removing capaci-  
tors, make sure to check the output ripple voltage as well to make  
sure it is still within spec.  
InitialTransient Setting  
19. With dynamic load still set at maximum step size, expand  
scope time scale to see 2 µs/div to 5 µs/div. You will see a wave-  
–18–  
REV. 0  
ADP3180  
LAYOUT AND COMPONENT PLACEMENT  
The following guidelines are recommended for optimal perfor-  
mance of a switching regulator in a PC system. Key layout issues  
are illustrated in Figure 11.  
The output capacitors should be connected as closely as pos-  
sible to the load (or connector) that receives the power (e.g.,  
a microprocessor core). If the load is distributed, the capaci-  
tors should also be distributed and generally in proportion to  
where the load tends to be more dynamic.  
SWITCH NODE  
12V CONNECTOR  
INPUT POWER PLANE  
PLANES  
Avoid crossing any signal lines over the switching power path  
loop, described in the Power Circuitry section.  
Power Circuitry  
The switching power path should be routed on the PCB to  
encompass the shortest possible length in order to minimize  
radiated switching noise energy (i.e., EMI) and conduc-  
tion losses in the board. Failure to take proper precautions  
often results in EMI problems for the entire PC system as  
well as noise-related operational problems in the power con-  
verter control circuitry.The switching power path is the loop  
formed by the current path through the input capacitors and  
the power MOSFETs including all interconnecting PCB  
traces and planes.The use of short and wide interconnec-  
tion traces is especially critical in this path for two reasons:  
it minimizes the inductance in the switching loop, which can  
cause high energy ringing, and it accommodates the high cur-  
rent demand with minimal voltage loss.  
THERMISTOR  
KEEP-OUT  
AREA  
OUTPUT  
POWER  
PLANE  
KEEP-OUT  
AREA  
KEEP-OUT  
AREA  
CPU  
SOCKET  
Whenever a power dissipating component (e.g., a power  
MOSFET) is soldered to a PCB, the liberal use of vias, both  
directly on the mounting pad and immediately surrounding  
it, is recommended.Two important reasons for this are improved  
current rating through the vias and improved thermal perfor-  
mance from vias extended to the opposite side of the PCB  
where a plane can more readily transfer the heat to the air.  
Make a mirror image of any pad being used to heatsink the  
MOSFETs on the opposite side of the PCB to achieve the  
best thermal dissipation to the air around the board. To fur-  
ther improve thermal performance, the largest possible pad  
area should be used.  
KEEP-OUT  
AREA  
Figure 11. Layout Recommendations  
General Recommendations  
For good results, at least a 4-layer PCB is recommended.  
This should allow the needed versatility for control circuitry  
interconnections with optimal placement, power planes for  
ground, input, and output power, and wide interconnection  
traces in the rest of the power delivery current paths. Keep  
in mind that each square unit of 1 ounce copper trace has a  
resistance of ~0.53 mW at room temperature.  
The output power path should also be routed to encompass a  
short distance.The output power path is formed by the cur-  
rent path through the inductor, the output capacitors, and  
the load.  
Whenever high currents must be routed between PCB layers,  
vias should be used liberally to create several parallel current  
paths so that the resistance and inductance introduced by  
these current paths is minimized and the via current rating is  
not exceeded.  
For best EMI containment, a solid power ground plane  
should be used as one of the inner layers extending fully  
under all the power components.  
If critical signal lines (including the output voltage sense lines  
of the ADP3180) must cross through power circuitry, it is  
best if a signal ground plane can be interposed between those  
signal lines and the traces of the power circuitry.This serves  
as a shield to minimize noise injection into the signals at the  
expense of making signal ground a bit noisier.  
Signal Circuitry  
The output voltage is sensed and regulated between the FB  
pin and the FBRTN pin, which connects to the signal ground  
at the load.To avoid differential mode noise pickup in the  
sensed signal, the loop area should be small.Thus the FB and  
FBRTN traces should be routed adjacent to each other atop  
the power ground plane back to the controller.  
An analog ground plane should be used around and under  
the ADP3180 as a reference for the components associated  
with the controller.This plane should be tied to the nearest  
output decoupling capacitor ground and should not be tied  
to any other power circuitry to prevent power currents from  
flowing in it.  
The feedback traces from the switch nodes should be con-  
nected as close as possible to the inductor.The CSREF signal  
should be connected to the output voltage at the nearest  
inductor to the controller.  
The components around the ADP3180 should be located  
close to the controller with short traces.The most important  
traces to keep short and away from other traces are the FB  
and CSSUM pins. Refer to Figure 11 for more details on  
layout for the CSSUM node.  
REV. 0  
–19–  
ADP3180  
OUTLINE DIMENSIONS  
28-LeadThin Shrink Small Outline Package [TSSOP]  
(RU-28)  
Dimensions shown in millimeters  
9.80  
9.70  
9.60  
28  
15  
14  
4.50  
4.40  
4.30  
6.40 BSC  
1
PIN 1  
0.65  
BSC  
1.20  
MAX  
0.15  
0.05  
0.75  
0.60  
0.45  
8؇  
0؇  
0.30  
0.19  
0.20  
0.09  
COPLANARITY  
0.10  
SEATING  
PLANE  
COMPLIANT TO JEDEC STANDARDS MO-153AE  
–20–  
REV. 0  

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