ADP3181 [ADI]

5-Bit or 6-Bit Programmable 2-,3-,4-Phase Synchronous Buck Controller; 5位或6位可编程2-, 3-, 4相同步降压控制器
ADP3181
型号: ADP3181
厂家: ADI    ADI
描述:

5-Bit or 6-Bit Programmable 2-,3-,4-Phase Synchronous Buck Controller
5位或6位可编程2-, 3-, 4相同步降压控制器

控制器
文件: 总24页 (文件大小:564K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
5-Bit or 6-Bit Programmable 2-,3-,4-Phase  
Synchronous Buck Controller  
ADP3181  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
VCC  
RAMPADJ RT  
Selectable 2-, 3-, or 4-phase operation at up to 1 MHz per  
phase  
28  
14 13  
ADP3181  
14.5 mV worst-case mV differential sensing error over  
temperature  
Logic-level PWM outputs for interface to external high  
power drivers  
Active current balancing between all output phases  
Built-in power good/crowbar blanking supports on-the-fly  
VID code changes  
UVLO  
11  
19  
EN  
SHUTDOWN  
AND BIAS  
OSCILLATOR  
SET  
EN  
GND  
27  
RESET  
PWM1  
CMP  
DAC + 300mV  
RESET  
2-/3-/4-PHASE  
DRIVER LOGIC  
26 PWM2  
CMP  
CURRENT-  
BALANCING  
CIRCUIT  
CSREF  
25  
RESET  
PWM3  
CMP  
DAC – 250mV  
RESET  
24  
PWM4  
CMP  
Digitally programmable output can be switched between  
VRM 9 (5-bit) and VRD 10 (6-bit) VID codes for  
ADP3181JRU. (VRD10 (6-bit) only for ADP3181JRQ)  
10  
PWRGD  
DELAY  
CURRENT  
LIMIT  
CROWBAR  
23  
22  
21  
20  
17  
16  
SW1  
SW2  
SW3  
SW4  
Programmable short circuit protection with programmable  
latch-off delay  
15  
12  
ILIMIT  
APPLICATIONS  
Desktop PC power supplies for  
next-generation Intel processors  
EN  
CSSUM  
CSREF  
CURRENT-  
LIMITING  
CIRCUIT  
DELAY  
VRM modules  
18  
8
CSCOMP  
FB  
SOFT  
START  
COMP  
9
PRECISION  
REFERENCE  
VID  
DAC  
7
6
1
2
3
4
5
FBRTN CPUID  
VID4 VID3 VID2 VID1 VID0  
Figure 1.  
GENERAL DESCRIPTION  
The ADP3181 is a highly efficient multiphase synchronous  
buck-switching regulator controller optimized for converting  
a 12 V main supply into the core supply voltage required by  
high performance Intel processors. It uses an internal 6-bit  
DAC to read a voltage identification (VID) code directly from  
the processor, which is used to set the output voltage. The  
CPUID input selects whether the DAC codes match the  
VRM 9 or VRD 10 specifications. It uses a multimode PWM  
architecture to drive the logic-level outputs at a programmable  
switching frequency that can be optimized for VR size and  
efficiency. The phase relationship of the output signals can  
be programmed to provide 2-, 3-, or 4-phase operation,  
allowing for the construction of up to four complementary  
buck-switching stages.  
The ADP3181 also includes programmable no-load offset and  
slope functions to adjust the output voltage as a function of the  
load current so that it is always optimally positioned for a  
system transient. The ADP3181 provides accurate and reliable  
short-circuit protection, adjustable current limiting, and a  
delayed power good output that accommodates on-the-fly  
output voltage changes requested by the CPU.  
The device is specified over the commercial temperature range  
of 0°C to +85°C and is available in 28-lead QSOP (only VRD10  
option) and TSSOP packages.  
Rev. A  
Information furnished by Analog Devices is believed to be accurate and reliable.  
However, no responsibility is assumed by Analog Devices for its use, nor for any  
infringements of patents or other rights of third parties that may result from its use.  
Specifications subject to change without notice. No license is granted by implication  
or otherwise under any patent or patent rights of Analog Devices. Trademarks and  
registered trademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2005 Analog Devices, Inc. All rights reserved.  
ADP3181  
TABLE OF CONTENTS  
Specifications..................................................................................... 3  
Applications..................................................................................... 15  
Setting the Clock Frequency..................................................... 15  
Soft Start and Current Limit Latch-Off Delay Times............ 15  
Inductor Selection...................................................................... 15  
Designing an Inductor............................................................... 16  
Output Droop Resistance.......................................................... 16  
Inductor DCR Temperature Correction ................................. 17  
Output Offset.............................................................................. 17  
Cout Selection ............................................................................... 17  
Power MOSFETS........................................................................ 18  
Ramp Resistor Selection............................................................ 19  
Current Limit Setpoint .............................................................. 20  
Feedback Loop Compensation Design.................................... 20  
CIN Selection and Input Current DI/DT Reduction .............. 21  
Building a Switchable VR9/VR10 Design............................... 22  
Layout and Component Placement.............................................. 23  
General Recommendations....................................................... 23  
Outline Dimensions....................................................................... 24  
Ordering Guide .......................................................................... 24  
Test Circuits ....................................................................................... 5  
Absolute Maximum Ratings............................................................ 6  
Pin Configuration and Function Descriptions............................. 7  
Typical Performance Characteristics ............................................. 8  
Theory of Operation ........................................................................ 9  
Start-Up Sequence........................................................................ 9  
Master Clock Frequency............................................................ 10  
Output Voltage Differential Sensing........................................ 10  
Output Current Sensing ............................................................ 10  
Active Impedance Control Mode............................................. 10  
Current Control Mode and Thermal Balance ........................ 10  
Voltage Control Mode................................................................ 11  
Soft Start ...................................................................................... 12  
Current Limit, Short Circuit, and Latch-Off Protection....... 12  
Dynamic VID.............................................................................. 12  
Power Good Monitoring ........................................................... 13  
Output Crowbar ......................................................................... 13  
Output Enable and UVLO ........................................................ 13  
REVISION HISTORY  
7/05—Rev. 0 to Rev. A  
Added QSOP Package................................................................ 25  
Change to Ordering Guide........................................................ 25  
4/04—Revision 0: Initial Version  
Rev. A | Page 2 of 24  
ADP3181  
SPECIFICATIONS  
VCC = 12 V, FBRTN = GND, TA = 0°C to +85°C, unless otherwise noted.1  
Table 1.  
Parameter  
Symbol  
Conditions  
Min  
Typ Max  
3.1  
Unit  
ERROR AMPLIFIER  
Output Voltage Range2  
Accuracy  
VCOMP  
VFB  
0.7  
−14.5  
V
Relative to nominal DAC output, referenced to  
FBRTN, CSSUM = CSCOMP. See Figure 3.  
+14.5 mV  
Line Regulation  
Input Bias Current  
FBRTN Current  
VCC = 10 V to 14 V.  
0.05  
%
ΔVFB  
IFB  
14  
15.5 17  
100 140  
500  
μA  
μA  
IFBRTN  
IO(ERR)  
GBW(ERR)  
Output Current  
Gain Bandwidth Product  
Slew Rate  
FB forced to VOUT − 3%.  
COMP = FB.  
CCOMP = 10 pF.  
μA  
MHz  
20  
25  
V/μs  
VID INPUTS  
Input Low Voltage  
VIL(VID)  
VIH(VID)  
IVID  
CPUID > 4.5 V.  
CPUID < 4.0 V.  
CPUID > 4.5 V.  
CPUID < 4.0 V.  
VID(X) = 0 V, CPUID > 4.5 V.  
VID(X) = 0 V, CPUID < 4.0 V.  
0.8  
0.4  
V
V
V
V
Input High Voltage  
Input Current  
2.0  
0.8  
40  
20  
60  
2.5  
70  
35  
μA  
μA  
kΩ  
V
Pull-up Resistance  
RVID  
40  
Internal Pull-Up Voltage  
CPUID > 4.5 V.  
CPUID < 4.0 V.  
2.25  
1.1  
2.75  
1.25 1.4  
V
VID Transition Delay Time2  
No CPU Detection Turn-Off Delay Time2  
CPUID INPUT  
VID code change to FB change.  
VID code change to 11111 to PWM going low.  
400  
400  
ns  
ns  
Input Low Voltage  
Input High Voltage  
VR 9 Detection Threshold Voltage  
Input Current  
VIL(CPUID)  
VIH(CPUID)  
0.4  
4.0  
4.5  
V
V
V
0.8  
4.0  
ICPUID  
CPUID = 0 V.  
20  
60  
3.5  
μA  
kΩ  
Pull-Up Resistance  
RCPUID  
4.0  
OSCILLATOR  
Frequency Range2  
Frequency Variation  
fOSC  
fPHASE  
0.25  
155  
4
MHz  
kHz  
kHz  
kHz  
V
200 245  
400  
TA = +25°C, RT = 250 kΩ, 4-phase.  
TA = +25°C, RT = 115 kΩ, 4-phase.  
TA = +25°C, RT = 75 kΩ, 4-phase.  
RT = 100 kΩ to GND.  
600  
Output Voltage  
VRT  
1.9  
−50  
0
2.0  
2.1  
RAMPADJ Output Voltage  
RAMPADJ Input Current Range  
VRAMPADJ  
IRAMPADJ  
RAMPADJ − FB.  
+50  
100  
mV  
μA  
CURRENT SENSE AMPLIFIER  
Offset Voltage  
Input Bias Current  
Gain Bandwidth Product  
Slew Rate  
VOS(CSA)  
IBIAS(CSSUM)  
GBW(CSA)  
CSSUM − CSREF. See Figure 2.  
−3  
−50  
+3  
+50  
mV  
nA  
MHz  
V/μs  
V
10  
10  
CCSCOMP = 10 pF.  
CSSUM and CSREF.  
See Figure 4.  
Input Common Mode Range  
Positioning Accuracy  
Output Voltage Range  
Output Current  
0
−77  
0.05  
2.7  
−80 −83  
2.7  
mV  
V
ΔVFB  
ICSCOMP  
500  
μA  
Rev. A | Page 3 of 24  
 
ADP3181  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
CURRENT BALANCE CIRCUIT  
Common Mode Range  
Input Resistance  
VSW(X)CM  
RSW(X)  
ISW(X)  
−600  
20  
+200  
40  
mV  
kΩ  
μA  
%
SW(X) = 0 V.  
SW(X) = 0 V.  
SW(X) = 0 V.  
30  
7
Input Current  
4
10  
Input Current Matching  
−5  
+5  
ΔISW(X)  
CURRENT LIMIT COMPARATOR  
Output Voltage  
Normal Mode  
VILIMIT(NM)  
VILIMIT(SD)  
IILIMIT(NM)  
2.9  
3
3.1  
V
EN > 0.8 V, RILIMIT = 250 kΩ.  
EN < 0.4 V, IILIMIT = −100 μA.  
EN > 0.8 V, RILIMIT = 250 kΩ.  
In Shutdown  
400  
mV  
Output Current, Normal Mode  
Maximum Output Current2  
Current Limit Threshold Voltage  
Current Limit Setting Ratio  
Delay Normal Mode Voltage  
Delay Overcurrent Threshold  
Latch-Off Delay Time  
12  
μA  
μA  
mV  
60  
VCL  
105  
125  
10.4  
3
145  
VCSREF – VCSCOMP, RILIMIT = 250 kΩ.  
VCL/IILIMIT.  
mV/μA  
V
VDELAY(NM)  
VDELAY(OC)  
tDELAY  
2.9  
1.7  
3.1  
1.9  
RDELAY = 250 kΩ.  
RDELAY = 250 kΩ.  
1.8  
1.5  
V
ms  
RDELAY = 250 kΩ, CDELAY = 12 nF.  
SOFT START  
Output Current, Soft Start Mode  
Soft Start Delay Time  
IDELAY(SS)  
tDELAY(SS)  
During start-up, delay < 2.4 V.  
15  
20  
1
25  
μA  
ms  
RDELAY = 250 kΩ, CDELAY = 12 nF, VID code = 011111.  
ENABLE INPUT  
Input Low Voltage  
Input High Voltage  
Input Current, Input Voltage Low  
Input Current, Input Voltage High  
VIL(EN)  
VIH(EN)  
IIL(EN)  
0.4  
V
V
0.8  
−1  
EN = 0 V.  
1
μA  
μA  
IIH(EN)  
EN = 1.25 V.  
10  
25  
POWER GOOD COMPARATOR  
Undervoltage Threshold  
Overvoltage Threshold  
Output Low Voltage  
Power Good Delay Time  
During Soft Start2  
VPWRGD(UV) Relative to nominal DAC output.  
VPWRGD(OV) Relative to nominal DAC output.  
VOL(PWRGD) IPWRGD(SINK) = 4 mA.  
−180  
230  
−250  
300  
225  
−320  
370  
400  
mV  
mV  
mV  
1
ms  
RDELAY = 250 kΩ, CDELAY = 12 nF, VID code = 011111.  
VID Code Changing  
VID Code Static  
100  
250  
200  
300  
700  
μs  
ns  
mV  
mV  
Crowbar Trip Point  
Crowbar Reset Point  
Crowbar Delay Time  
VID Code Changing  
VID Code Static  
VCROWBAR  
tCROWBAR  
Relative to nominal DAC output.  
Relative to FBRTN.  
Overvoltage to PWM going low.  
230  
630  
370  
770  
100  
250  
400  
μs  
ns  
PWM OUTPUTS  
Output Low Voltage  
Output High Voltage  
VOL(PWM)  
VOH(PWM)  
160  
5
500  
mV  
V
IPWM(SINK) = −400 μA.  
IPWM(SOURCE) = 400 μA.  
4.0  
SUPPLY  
DC Supply Current  
UVLO Threshold Voltage  
UVLO Hysteresis  
5
6.9  
0.9  
10  
7.3  
1.1  
mA  
V
V
VUVLO  
VCC rising.  
6.5  
0.7  
1 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).  
2 Guaranteed by design, not tested in production.  
Rev. A | Page 4 of 24  
ADP3181  
TEST CIRCUITS  
ADP3181  
ADP3181  
VCC  
VCC  
28  
18  
17  
16  
19  
12V  
28  
8
12V  
CSCOMP  
CSSUM  
CSREF  
FB  
39kΩ  
100nF  
10kΩ  
COMP  
CSCOMP  
CSSUM  
CSREF  
GND  
9
1kΩ  
200kΩ  
18  
17  
16  
CSCOMP–1V  
40  
1.0V  
100nF  
V
=
200kΩ  
OS  
GND  
ΔV  
1.0V  
19  
Δ
V
= FB  
– FB  
V = 80mV ΔV = 0mV  
FB  
Δ
Figure 2. Current Sense Amplifier VOS  
Figure 4. Positioning Voltage  
ADP3181  
VCC 28  
1
2
VID4  
12V  
100nF  
+
1μF  
27  
26  
PWM1  
PWM2  
VID3  
3
VID2  
5-BIT CODE  
4
PWM3 25  
VID1  
24  
5
PWM4  
VID0  
23  
6
SW1  
CPUID  
FBRTN  
FB  
22  
21  
20  
19  
18  
17  
16  
15  
7
SW2  
SW3  
8
9
SW4  
COMP  
PWRGD  
EN  
1kΩ  
10  
11  
12  
13  
14  
GND  
1.25V  
CSCOMP  
CSSUM  
CSREF  
ILIMIT  
20kΩ  
100nF  
DELAY  
RT  
12nF  
250kΩ  
RAMPADJ  
250kΩ  
Figure 3. Closed-Loop Output Voltage Accuracy  
Rev. A | Page 5 of 24  
 
 
ADP3181  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or  
any other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability. Absolute maximum ratings apply individually  
only, not in combination. Unless otherwise specified all other  
voltages are referenced to GND.  
Parameter  
Rating  
VCC  
FBRTN  
−0.3 V to 15 V  
−0.3 V to +0.3 V  
VID0 to VID4, CPUID, EN, DELAY, ILIMIT, −0.3 V to 5.5 V  
CSCOMP, RT, PWM1 to PWM4, COMP  
SW1 to SW4  
−5 V to +25 V  
All Other Inputs and Outputs  
Storage Temperature  
Operating Ambient Temperature  
Range  
−0.3 V to VCC +0.3 V  
−65°C to +150°C  
0°C to +85°C  
Operating Junction Temperature  
Thermal Impedance (θJA)  
Lead Temperature  
125°C  
100°C/W  
Soldering (10 sec)  
Infrared (15 sec)  
300°C  
260°C  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. A | Page 6 of 24  
 
ADP3181  
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS  
VID4  
1
2
3
4
5
6
7
8
9
28 VCC  
VID3  
27 PWM1  
26 PWM2  
25 PWM3  
24 PWM4  
23 SW1  
VID2  
VID1  
VID0  
CPUID  
FBRTN  
FB  
ADP3181  
22 SW2  
TOP VIEW  
21 SW3  
(Not to Scale)  
COMP  
20 SW4  
PWRGD 10  
EN 11  
19 GND  
18 CSCOMP  
17 CSSUM  
16 CSREF  
15 ILIMIT  
DELAY 12  
RT 13  
RAMPADJ 14  
Figure 5. Pin Configuration  
Table 3. Pin Function Descriptions  
Pin No. Mnemonic Description  
1 to 5  
VID4 to VID0  
Voltage Identification DAC Inputs. These five pins are pulled up to an internal reference, providing a  
Logic 1 if left open. When in normal operation mode, the DAC output programs the FB regulation voltage  
based on the condition of the CPUID pin (see Table 4 and Table 5). Leaving VID4 through VID0 open results  
in ADP3181 going into a no CPU mode, shutting off its PWM outputs.  
6
CPUID  
CPU DAC Code Selection Input. When this pin is pulled > 4.25 V, the internal DAC reads its inputs based on  
the VRM 9 VID table (see Table 4). When this pin is <4 V, the DAC reads its inputs based on the VRD 10 VID  
table (see Table 5) and treats CPUID as the VID5 input. (ADP3181JRQ, VRD10 only)  
7
8
FBRTN  
FB  
Feedback Return. VID DAC and error amplifier reference for remote sensing of the output voltage.  
Feedback Input. Error amplifier input for remote sensing of the output voltage. An external resistor  
between this pin and the output voltage sets the no-load offset point.  
9
COMP  
Error Amplifier Output and Compensation Point.  
10  
PWRGD  
Power Good Output. Open drain output that signals when the output voltage is outside of the proper  
operating range.  
11  
12  
EN  
DELAY  
Power Supply Enable Input. Pulling this pin to GND disables the PWM outputs.  
Soft Start Delay and Current Limit Latch-off Delay Setting Input. An external resistor and capacitor  
connected between this pin and GND sets the soft start ramp-up time and the overcurrent latch-off delay  
time.  
13  
14  
15  
RT  
Frequency Setting Resistor Input. An external resistor connected between this pin and GND sets the  
oscillator frequency of the device.  
PWM Ramp Current Input. An external resistor from the converter input voltage to this pin sets the internal  
PWM ramp.  
Current Limit Set Point/Enable Output. An external resistor from this pin to GND sets the current limit  
threshold of the converter. This pin is actively pulled low when the ADP3181 EN input is low, or when VCC is  
below its UVLO threshold to signal to the driver IC that the driver high-side and low-side outputs should go  
low.  
RAMPADJ  
ILIMIT  
16  
CSREF  
Current Sense Reference Voltage Input. The voltage on this pin is used as the reference for the current  
sense amplifier and the power good and crowbar functions. This pin should be connected to the common  
point of the output inductors.  
17  
18  
19  
CSSUM  
CSCOMP  
GND  
Current Sense Summing Node. External resistors from each switch node to this pin sum the average  
inductor currents together to measure the total output current.  
Current Sense Compensation Point. A resistor and capacitor from this pin to CSSUM determines the slope  
of the load line and the positioning loop response time.  
Ground. All internal biasing and the logic output signals of the device are referenced to this ground.  
20 to 23 SW4 to SW1  
Current Balance Inputs. Inputs for measuring the current level in each phase. The SW pins of unused  
phases should be left open.  
24 to 27 PWM4 to PMW1 Logic-level PWM Outputs. Each output is connected to the input of an external MOSFET driver such as the  
ADP3110. Connecting the PWM3 and/or PWM4 outputs to GND causes that phase to turn off, allowing the  
ADP3181 to operate as a 2-, 3-, or 4-phase controller.  
28  
VCC  
Supply Voltage for the Device.  
Rev. A | Page 7 of 24  
 
ADP3181  
TYPICAL PERFORMANCE CHARACTERISTICS  
4
5.3  
5.2  
5.1  
5.0  
4.9  
4.8  
4.7  
4.6  
T
= 25°C  
A
4-PHASE OPERATION  
3
2
1
0
0
50  
100  
150  
200  
250  
300  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
R
VALUE (kΩ)  
OSCILLATOR FREQUENCY (MHz)  
T
Figure 7. Supply Current vs. Oscillator Frequency  
Figure 6. Master Clock Frequency vs. RT  
Rev. A | Page 8 of 24  
 
 
ADP3181  
THEORY OF OPERATION  
The ADP3181 combines a multimode, fixed-frequency PWM  
control with multiphase logic outputs for use in 2-, 3-, and  
4-phase synchronous buck CPU core supply power converters.  
The internal VID DAC can be used in Intels 5-bit VRM 9 or  
6-bit VRD/VRM 10 designs, depending on the setting of the  
CPUID pin. Multiphase operation is important for producing  
the high currents and low voltages demanded by todays micro-  
processors. Handling the high currents in a single-phase  
converter places high thermal demands on the components in  
the system such as the inductors and MOSFETs. The multimode  
control of the ADP3181 ensures a stable, high performance  
topology for  
The PWM outputs are logic-level devices intended for driving  
external gate drivers such as the ADP3110. Because each phase  
is monitored independently, operation approaching 100% duty  
cycle is possible. Also, more than one output can be on at a time  
for overlapping phases.  
The VID DAC configuration is determined by the voltage pre-  
sent at the CPUID pin. If this pin is pulled up to >4.5 V, the  
VID DAC operates with five inputs and generates the VR 9  
output voltage range, as shown in Table 4. If CPUID is <4 V, the  
VID DAC treats CPUID as the VID5 input of VR 10 and  
operates as a 6-bit DAC using the output voltage range given in  
Table 5.  
Balancing currents and thermals between phases.  
Table 4. VR 9 VID Codes for ADP3181JRU Only, CPUID >4.25  
High speed response at the lowest possible switching  
frequency and output decoupling.  
VID4  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
VID3  
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
VID2  
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
VID1  
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
VID0  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Output  
No CPU  
1.100 V  
1.125 V  
1.150 V  
1.175 V  
1.200 V  
1.225 V  
1.250 V  
1.275 V  
1.300 V  
1.325 V  
1.350 V  
1.375 V  
1.400 V  
1.425 V  
1.450 V  
1.475 V  
1.500 V  
1.525 V  
1.550 V  
1.575 V  
1.600 V  
1.625 V  
1.650 V  
1.675 V  
1.700 V  
1.725 V  
1.750 V  
1.775 V  
1.800 V  
1.825 V  
1.850 V  
Minimizing thermal switching losses due to lower  
frequency operation.  
Tight load line regulation and accuracy.  
High current output from 4-phase operational design.  
Reduced output ripple due to multiphase cancellation.  
PC board layout noise immunity.  
Ease of use and design due to independent component  
selection.  
Flexibility in operation for tailoring design to low cost or  
high performance.  
START-UP SEQUENCE  
Two functions are set during the start-up sequence: the number  
of active phases and the VID DAC configuration. The number  
of operational phases and their phase relationship is determined  
by internal circuitry that monitors the PWM outputs. Normally,  
the ADP3181 operates as a 4-phase PWM controller. Grounding  
the PWM4 pin programs 3-phase operation and grounding the  
PWM3 and PWM4 pins programs 2-phase operation.  
When the ADP3181 is enabled, the controller outputs a voltage  
on PWM3 and PWM4 that is approximately 675 mV. An  
internal comparator checks each pin’s voltage versus a threshold  
of 300 mV. If the pin is grounded, then it is below the threshold  
and the phase is disabled. The output resistance of the PWM  
pin is approximately 5 kΩ during this detection time. Any  
external pull-down resistance connected to the PWM pin  
should not be less than 25 kΩ to ensure proper operation.  
PWM1 and PWM2 are disabled during the phase detection  
interval, which occurs during the first two clock cycles of the  
internal oscillator. After this time, if the PWM output is not  
grounded the 5 kΩ resistance is removed and it switches  
between 0 V and 5 V. If the PWM output is grounded then it  
remains off.  
Rev. A | Page 9 of 24  
 
 
ADP3181  
To provide the best accuracy for the sensing of current, the CSA  
has been designed to have a low offset input voltage. Also, the  
sensing gain is determined by external resistors so that it can be  
made extremely accurate.  
MASTER CLOCK FREQUENCY  
The clock frequency of the ADP3181 is set with an external  
resistor connected from the RT pin to ground. The frequency  
follows the graph in Figure 6. To determine the frequency per  
phase, the clock is divided by the number of phases in use. If  
PWM4 is grounded, then divide the master clock by 3 for the  
frequency of the remaining phases. If PWM3 and 4 are  
grounded, then divide by 2. If all phases are in use, divide by 4.  
ACTIVE IMPEDANCE CONTROL MODE  
For controlling the dynamic output voltage droop as a function  
of output current, a signal proportional to the total output cur-  
rent at the CSCOMP pin can be scaled to be equal to the droop  
impedance of the regulator times the output current. This  
droop voltage is then used to set the input control voltage to the  
system. The droop voltage is subtracted from the DAC refer-  
ence input voltage directly to tell the error amplifier where the  
output voltage should be. This differs from previous implemen-  
tations and allows enhanced feed-forward response.  
OUTPUT VOLTAGE DIFFERENTIAL SENSING  
The ADP3181 combines differential sensing with a high  
accuracy VID DAC and reference and a low offset error  
amplifier to maintain a worst-case specification of 14.5 mV  
differential sensing error over its full operating output voltage  
and temperature range. The output voltage is sensed between  
the FB and FBRTN pins. FB should be connected through a  
resistor to the regulation point, usually the remote sense pin of  
the microprocessor. FBRTN should be connected directly to the  
remote sense ground point. The internal VID DAC and  
precision reference are referenced to FBRTN, which has a  
minimal current of 100 μA to allow accurate remote sensing.  
The internal error amplifier compares the output of the DAC to  
the FB pin to regulate the output voltage.  
CURRENT CONTROL MODE AND THERMAL  
BALANCE  
The ADP3181 has individual inputs for each phase, which are  
used for monitoring the current in each phase. This informa-  
tion is combined with an internal ramp to create a current  
balancing feedback system that has been optimized for initial  
current balance accuracy and dynamic thermal balancing  
during operation. This current balance information is indepen-  
dent of the average output current information used for  
positioning described previously.  
OUTPUT CURRENT SENSING  
The ADP3181 provides a dedicated current sense amplifier  
(CSA) to monitor the total output current for proper voltage  
positioning versus load current and for current limit detection.  
Sensing the load current at the output gives the total average  
current being delivered to the load, which is an inherently more  
accurate method then peak current detection or sampling the  
current across a sense element such as the low side MOSFET.  
This amplifier can be configured several ways depending on the  
objectives of the system:  
The magnitude of the internal ramp can be set to optimize  
the transient response of the system. It also monitors the supply  
voltage for feed-forward control for changes in the supply.  
A resistor connected from the power input voltage to the  
RAMPADJ pin determines the slope of the internal PWM  
ramp. Detailed information about programming the ramp is  
given in the Applications section.  
External resistors can be placed in series with individual phases  
to create an intentional current imbalance, such as when one  
phase may have better cooling and can support higher currents.  
Resistors RSW1 through RSW4 (see the typical application cir-  
cuit in Figure 10) can be used for adjusting thermal balance. It  
is best to have the ability to add these resistors during the initial  
design, so make sure placeholders are provided in the layout.  
Output inductor ESR sensing without a thermistor for  
lowest cost.  
Output inductor ESR sensing with a thermistor for  
improved accuracy with tracking of inductor temperature.  
Sense resistors for highest accuracy measurements.  
The positive input of the CSA is connected to the CSREF pin,  
which is connected to the output voltage. The inputs to the  
amplifier are summed together through resistors from the  
sensing element (such as the switch node side of the output  
inductors) to the inverting input, CSSUM. The feedback resistor  
between CSCOMP and CSSUM sets the gain of the amplifier,  
and a filter capacitor is placed in parallel with this resistor. The  
gain of the amplifier is programmable by adjusting the feedback  
resistor to set the load line required by the microprocessor. The  
current information is then given as the difference of CSREF –  
CSCOMP. This difference signal is used internally to offset the  
VID DAC for voltage positioning and as a differential input for  
the current limit comparator.  
To increase the current in any phase, make RSW for that phase  
larger (make RSW = 0 for the hottest phase; do not change  
during balancing). Increasing RSW to only 500 Ω makes a  
substantial increase in phase current. Increase each RSW value by  
small amounts to achieve balance, starting with the coolest  
phase first.  
Rev. A | Page 10 of 24  
 
ADP3181  
The negative input (FB) is tied to the output sense location with  
a resistor RB and is used for sensing and controlling the output  
voltage at this point. A current source from the FB pin flowing  
through RB is used for setting the no-load offset voltage from  
the VID voltage. The no-load voltage is negative with respect to  
the VID DAC. The main loop compensation is incorporated in  
the feedback network between FB and COMP.  
VOLTAGE CONTROL MODE  
A high gain-bandwidth voltage mode error amplifier is used for  
the voltage-mode control loop. The control input voltage to the  
positive input is set via the VID logic. This voltage is also offset  
by the droop voltage for active positioning of the output voltage  
as a function of current, commonly known as active voltage  
positioning. The output of the amplifier is the COMP pin,  
which sets the termination voltage for the internal PWM ramps.  
Table 5. VR 10 VID Codes for the ADP3181, CPUID Used As a VID5 Input  
VID4  
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
VID3  
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
VID2  
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
VID1  
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
0
0
0
0
1
1
1
VID0  
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
1
0
0
1
1
0
CPUID  
Output  
VID4  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
VID3  
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
VID2  
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
VID1  
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
VID0  
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
CPUID  
Output  
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
No CPU  
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1.2125 V  
1.2250 V  
1.2375 V  
1.2500 V  
1.2625 V  
1.2750 V  
1.2875 V  
1.3000 V  
1.3125 V  
1.3250 V  
1.3375 V  
1.3500 V  
1.3625 V  
1.3750 V  
1.3875 V  
1.4000 V  
1.4125 V  
1.4250 V  
1.4375 V  
1.4500 V  
1.4625 V  
1.4750 V  
1.4875 V  
1.5000 V  
1.5125 V  
1.5250 V  
1.5375 V  
1.5500 V  
1.5625 V  
1.5750 V  
1.5875 V  
1.6000 V  
No CPU  
0.8375 V  
0.8500 V  
0.8625 V  
0.8750 V  
0.8875 V  
0.9000 V  
0.9125 V  
0.9250 V  
0.9375 V  
0.9500 V  
0.9625 V  
0.9750 V  
0.9875 V  
1.0000 V  
1.0125 V  
1.0250 V  
1.0375 V  
1.0500 V  
1.0625 V  
1.0750 V  
1.0875 V  
1.1000 V  
1.1125 V  
1.1250 V  
1.1375 V  
1.1500 V  
1.1625 V  
1.1750 V  
1.1875 V  
1.2000 V  
Rev. A | Page 11 of 24  
 
 
ADP3181  
Since the controller continues to cycle the phases during the  
latch-off delay time, the controller returns to normal operation  
if the short is removed before the 1.8 V threshold is reached.  
The recovery characteristic depends on the state of PWRGD. If  
the output voltage is within the PWRGD window, the controller  
resumes normal operation. However, if a short circuit has  
caused the output voltage to drop below the PWRGD threshold,  
then a soft start cycle is initiated.  
SOFT START  
The power-on ramp up time of the output voltage is set with a  
capacitor and resistor in parallel from the DELAY pin to  
ground. The RC time constant also determines the current limit  
latch-off time as explained in the following section. In UVLO or  
when EN is a logic low, the DELAY pin is held at ground. After  
the UVLO threshold is reached and EN is a logic high, the  
DELAY capacitor is charged up with an internal 20 μA current  
source. The output voltage follows the ramping voltage on the  
DELAY pin, limiting the inrush current. The soft start time  
depends on the value of VID DAC and CDLY, with a secondary  
effect from RDLY. Refer to the Applications section for detailed  
The latch-off function can be reset by removing and reapplying  
VCC to the ADP3181, or by pulling the EN pin low for a short  
time. To disable the short circuit latch-off function, the external  
resistor to ground should be left open and a high value (>1 MΩ)  
resistor should be connected from DELAY to VCC. This  
prevents the DELAY capacitor from discharging so the 1.8 V  
threshold is never reached. The resistor has an impact on the  
soft start time because the current through it adds to the  
internal 20 μA current source.  
information on setting CDLY  
.
If either EN is taken low or VCC drops below UVLO, the delay  
capacitor is reset to ground to be ready for another soft start  
cycle. Figure 8 shows the typical start-up waveforms for the  
ADP3181.  
Figure 8. Typical Start-up Waveforms, Channel 1: PWRGD, Channel 2: CSREF,  
Channel 3: DELAY, Channel 4: COMP  
Figure 9. Overcurrent Latch-off Waveforms. Channel 1: CSREF, Channel 2:  
DELAY, Channel 3: COMP, Channel 4: Phase 1 Switch Node  
CURRENT LIMIT, SHORT CIRCUIT, AND LATCH-OFF  
PROTECTION  
During start-up when the output voltage is below 200 mV, a  
secondary current limit is active because the voltage swing of  
CSCOMP cannot go below ground. This secondary current  
limit controls the internal COMP voltage to the PWM com-  
parators to 2 V. This limits the voltage drop across the low-side  
MOSFETs through the current balance circuitry. There is also  
an inherent per phase current limit that protects individual  
phases when one or more phases may stop functioning because  
of a faulty component. This limit is based on the maximum  
normal-mode COMP voltage.  
The ADP3181 compares a programmable current limit setpoint  
to the voltage from the output of the current sense amplifier.  
The level of current limit is set with the resistor from the  
ILIMIT pin to ground. During normal operation, the voltage on  
ILIMIT is 3 V. The current through the external resistor is inter-  
nally scaled to give a current limit threshold of 10.4 mV/μA. If  
the difference in voltage between CSREF and CSCOMP rises  
above the current limit threshold, the internal current limit  
amplifier controls the internal COMP voltage to maintain the  
average output current at the limit.  
DYNAMIC VID  
The ADP3181 incorporates the ability to dynamically change  
the VID input while the controller is running. This allows the  
output voltage to change while the supply is running and sup-  
plying current to the load. This is commonly referred to as  
VID-on-the-fly (VID-OTF). A VID-OTF can occur under light  
or heavy load conditions. The processor signals the controller  
by changing the VID inputs in multiple steps from the start  
code to the finish code. This change can be positive or negative.  
After the limit is reached, the 3 V pull-up on the DELAY pin is  
disconnected, and the external DELAY capacitor is discharged  
through the external resistor. A comparator monitors the  
DELAY voltage and shuts off the controller when the voltage  
drops below 1.8 V. The current limit latch-off delay time is thus  
set by the RC time constant discharging from 3 V to 1.8 V. The  
Applications section discusses the selection of CDLY and RDLY  
.
Rev. A | Page 12 of 24  
 
 
ADP3181  
When a VID input changes state, the ADP3181 detects the  
change and ignores the DAC inputs for a minimum of 400 ns.  
This time is to prevent a false code due to logic skew while the  
5 VID inputs are changing. Additionally, the first VID change  
initiates the PWRGD and CROWBAR blanking functions for a  
minimum of 250 μs to prevent a false PWRGD or CROWBAR  
event. Each VID change resets the internal timer.  
OUTPUT CROWBAR  
As part of the protection for the load and output components of  
the supply, the PWM outputs are driven low (turning on the  
low-side MOSFETs) when the output voltage exceeds the upper  
crowbar threshold. This crowbar action stops once the output  
voltage has fallen below the release threshold of about 700 mV.  
Turning on the low-side MOSFETs pulls down the output as the  
reverse current builds up in the inductors. If the output  
overvoltage is due to a short of the high-side MOSFET, this  
action current limits the input supply or blows its fuse,  
protecting the microprocessor from destruction.  
POWER GOOD MONITORING  
The power good comparator monitors the output voltage via  
the CSREF pin. The PWRGD pin is an open drain output  
whose high level (when connected to a pull-up resistor)  
indicates that the output voltage is within the nominal limits  
specified in the specifications above based on the VID voltage  
setting. PWRGD goes low if the output voltage is outside of this  
specified range, if all of the VID DAC inputs are high, or  
whenever the EN pin is pulled low. PWRGD is blanked during a  
VID-OTF event for a period of 250 μs to prevent false signals  
during the time the output is changing.  
OUTPUT ENABLE AND UVLO  
The VCC to the controller must be higher than the UVLO  
threshold and the EN pin must be higher then its logic  
threshold for the ADP3181 to begin switching. IF UVLO is less  
than the threshold or the EN pin is a logic low, the device is  
disabled. This holds the PWM outputs at ground, shorts the  
DELAY capacitor to ground, and holds the ILIMIT pin at  
ground.  
The PWRGD circuitry also incorporates an initial turn-on  
delay time based on the delay ramp. The PWRGD pin is held  
low until the DELAY pin has reached 2.8 V. The time between  
when the PWRGD undervoltage threshold is reached and when  
the DELAY pin reaches 2.8 V provides the turn-on delay time.  
This time is incorporated into the soft start ramp. To ensure a 1  
ms delay time on PWRGD, the soft start ramp must also be >1  
ms. Refer to the Applications section for detailed information  
In the application circuit, the ILIMIT pin should be connected  
to the OD pins of the ADP3110 drivers. Because ILIMIT is  
grounded, this disables the drivers such that both DRVH and  
DRVL are grounded. This feature is important to prevent dis-  
charging of the output capacitors when the controller is shut off.  
If the driver outputs were not disabled, then a negative voltage  
could be generated on the output due to the high current dis-  
charge of the output capacitors through the inductors.  
on setting CDLY  
.
Rev. A | Page 13 of 24  
 
ADP3181  
L1  
1.6μH  
470μF/16V  
× 6  
NICHICON PW SERIES  
V
IN  
12V  
C9  
4.7μF  
+
+
R1  
2.2Ω  
C10  
18nF  
V
RTN  
D2  
IN  
C8  
10nF  
1N4148WS  
U2  
ADP3110  
C1  
C6  
Q1  
IPD12N03L  
1
2
3
4
BST  
IN  
DRVH  
8
7
6
5
820μF/2.5V × 8  
L2  
FUJITSU RE SERIES  
600nH/1.6mΩ  
SW  
PGND  
DRVL  
8mΩ ESR (EACH)  
V
CC(CORE)  
0.8375V – 1.6V  
65A AVG, 74A PK  
D1  
OD  
+
+
1N4148WS  
VCC  
C7  
4.7μF  
V
CC(CORE) RTN  
Q3  
IPD06N03L  
C28  
C21  
Q2  
IPD06N03L  
R2  
C14  
2.2Ω  
18nF  
C13  
4.7μF  
D3  
C12  
1N4148WS  
U3  
10μF × 23  
MLCC  
IN  
10nF  
ADP3110  
Q4  
IPD12N03L  
SOCKET  
1
2
3
4
BST  
IN  
DRVH  
8
7
6
5
L3  
600nH/1.6mΩ  
SW  
PGND  
DRVL  
OD  
VCC  
C11  
4.7μF  
Q6  
IPD06N03L  
Q5  
IPD06N03L  
R3  
C18  
2.2Ω  
18nF  
C17  
4.7μF  
D4  
C16  
1N4148WS  
U4  
10nF  
ADP3110  
Q7  
IPD12N03L  
1
2
3
4
BST  
IN  
DRVH  
8
7
6
5
L4  
600nH/1.6mΩ  
SW  
PGND  
DRVL  
OD  
VCC  
C15  
4.7μF  
Q9  
IPD06N03L  
Q8  
IPD06N03L  
RTH  
100kΩ, 5%  
+
C19  
1μF  
C20  
33μF  
R4  
10Ω  
R
R
U1  
ADP3181  
383kΩ  
1
2
VCC 28  
VID4  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
PWM1  
PWM2  
PWM3  
PWM4  
SW1  
VID3  
3
VID2  
4
VID1  
5
VID0  
R
R
SW1  
*
6
CPUID  
FBRTN  
FB  
R
SW2  
*
7
SW2  
C
1.5nF  
B
R
8
PH1  
124kΩ  
SW3  
C
33pF  
FB  
SW3  
*
R
PH3  
124kΩ  
9
SW4  
COMP  
PWRGD  
EN  
R
C
R
B
A
A
POWER  
GOOD  
1.33kΩ 390pF 16.9kΩ  
10  
11  
12  
13  
14  
R
GND  
R
R
CS2  
PH2  
C
1.5nF  
CS1  
CS2  
124kΩ  
35.7kΩ 73.2kΩ  
ENABLE  
CSCOMP  
CSSUM  
CSREF  
ILIMIT  
DELAY  
RT  
C
CS1  
2.2nF  
C
12nF  
R
DLY  
DLY  
330kΩ  
R
T
*FOR A DESCRIPTION OF  
OPTIONAL R RESISTORS,  
SEE THE THEORY OF  
OPERATION SECTION.  
RAMPADJ  
249kΩ  
R
LIM  
SW  
200kΩ  
Figure 10. Typical VR 10 Application Circuit  
Rev. A | Page 14 of 24  
 
ADP3181  
APPLICATIONS  
The design parameters for a typical ADP3181 CPU application  
are as follows:  
Assuming an RDLY of 250 kΩ and a desired PWRGD delay time  
of 1 μs, CDLY is 12 nF. The soft start delay time can then be  
calculated using  
Input voltage (VIN) = 12 V  
VID setting voltage (VVID) = 1.500 V  
Duty cycle (D) = 0.125  
CDLY ×VVID  
tss  
=
(2)  
(3)  
VVID  
2 × RDLY  
20 μA −  
Nominal output voltage at no load (VONL) = 1.480 V  
Nominal output voltage at 65 A load (VOFL) = 1.3825 V  
Once CDLY has been chosen, RDLY can be calculated for the  
current limit latch-off time using  
Static output voltage drop based on a 1.5 mΩ load line (RO)  
from no load to full load:  
2 ×tDELAY  
CDLY  
(VΔ) = VONL − VOFL VΔ = 1.480 V − 1.3825 V = 97.5 mV  
RDLY  
=
Maximum output current (IO) = 65 A  
Number of phases (n) = 3  
If the result for RDLY is less than 200 kΩ, then a smaller soft start  
time should be considered by recalculating the equation for  
Switching frequency per phase (fSW) = 330 kHz  
CDLY or a longer latch-off time should be used. In no case should  
RDLY be less than 200 kΩ. In this example, a delay time of 2 ms  
SETTING THE CLOCK FREQUENCY  
gives RDLY = 333 kΩ. The closest standard 5% value is 330 kΩ.  
Substituting 330 kΩ back into Equations 1 and 2 shows that the  
PWRGD delay and soft start times do not change significantly.  
The ADP3181 uses a fixed-frequency control architecture. The  
frequency is set by an external timing resistor (RT). The clock  
frequency and the number of phases determine the switching  
frequency per phase, which relates directly to switching losses  
and the sizes of the inductors and input and output capacitors.  
With n = 3 for three phases, a clock frequency of 990 kHz sets  
the switching frequency of each phase, fSW, to 330 kHz, which  
represents a practical trade-off between the switching losses and  
the sizes of the output filter components. Figure 6 shows that to  
achieve a 990 kHz oscillator frequency, the correct value for RT  
is 200 kΩ. For good initial accuracy and frequency stability, it is  
recommended to use a 1% resistor.  
INDUCTOR SELECTION  
The choice of inductance for the inductor determines the ripple  
current in the inductor. Less inductance leads to more ripple  
current, which increases the output ripple voltage and conduc-  
tion losses in the MOSFETs, but allows using smaller size  
inductors and, for a specified peak-to-peak transient deviation,  
less total output capacitance. Conversely, a higher inductance  
means lower ripple current and reduced conduction losses, but  
requires larger size inductors and more output capacitance for  
the same peak-to-peak transient deviation. In any multiphase  
converter, a practical value for the peak-to-peak inductor ripple  
current is less than 80% of the maximum DC current in the  
same inductor. Equation 3 shows the relationship between the  
inductance, oscillator frequency, and peak-to-peak ripple  
current in the inductor. Equation 4 determines the minimum  
inductance based on a given output ripple voltage:  
SOFT START AND CURRENT LIMIT LATCH-OFF  
DELAY TIMES  
Because the soft start, PWRGD delay, and current limit latch-  
off delay functions all share the DELAY pin, these three  
parameters must be considered together. The first step is to set  
CDLY for the PWRGD delay ramp. This ramp is generated by a  
20 μA internal current source. The value of RDLY has a second-  
order impact on the soft start time because it sinks part of the  
current source to ground. However, as long as RDLY is greater  
than 200 kΩ, this effect is minor. The value for CDLY can be  
approximated using  
VVID (1D)  
IRIPPLE  
=
(4)  
(5)  
fSW × L  
V
VID × RO ×  
(1D  
)× 1(n× D)  
( )  
L =  
2.8 V VVID VPWRGD(UV)  
2 × RDLY  
fSW ×VRIPPLE  
tPWRGD  
2.8 V VVID VPWRGD(UV)  
CDLY  
=
20 μA −  
×
Intel recommends that the ripple voltage should not exceed  
10 mV peak-to-peak at the socket. Solving Equation 4 for a 12  
mV peak-to-peak output ripple voltage at the regulators output  
to allow for drops through the PCB traces yields  
(1)  
where tPWRGD is the desired PWRGD delay time and VPWRGD(UV) is  
the undervoltage threshold for the PWRGD comparator.  
1.5 V ×1.5 mΩ × 0.875 ×  
(
1 0.375  
)
= 310 nH  
L ≥  
(6)  
330 kHz ×12 mV  
Rev. A | Page 15 of 24  
 
 
ADP3181  
If the ripple voltage is less than that designed for, the inductor  
can be made smaller until the ripple value is met. This allows  
optimal transient response and minimum output decoupling.  
Coiltronics  
(561) 752-5000  
www.coiltronics.com  
The smallest possible inductor should be used to minimize the  
number of output capacitors. A 300 nH inductor is a good  
choice to start, and it gives a calculated ripple current of 13.3 A,  
which is 61% of the full load current of 21.7 A. The inductor  
should not saturate at the peak current of 29 A, and should be  
able to handle the sum of the power dissipation caused by the  
average current of 22 A in the winding and the core loss.  
Sumida Corporation  
(510) 668-0660  
www.sumida.com  
Vishay  
(402) 563-6866  
www.vishay.com  
OUTPUT DROOP RESISTANCE  
Another important factor in the inductor design is the DCR,  
which is used for measuring the phase currents. A large DCR  
causes excessive power losses, while too small a value leads to  
increased measurement error. A good rule is to have the DCR  
be about 1 to 1½ times the droop resistance or DC output  
resistance (RO).  
The design requires that the regulator output voltage measured  
at the CPU pins drops when the output current increases. The  
specified voltage drop corresponds to RO.  
The output current is measured by summing together the  
voltage across each inductor and then passing the signal  
through a low-pass filter. This summer filter is the CS amplifier  
configured with resistors RPH(X) (summers), and RCS and CCS  
(filter). The output resistance of the regulator is set by these  
equations, where RL is the DCR of the output inductors:  
DESIGNING AN INDUCTOR  
Once the inductance and DCR are known, the next step is to  
design an inductor or find a standard inductor that comes as  
close as possible to meeting the overall design goals. It is also  
important to have the inductance and DCR tolerance specified  
to keep the accuracy of the system controlled. Using 15% for the  
inductance and 8% for the DCR (at room temperature) are  
reasonable tolerances that most manufacturers can meet.  
RCS  
RPH(X)  
RO =  
× RL  
(7)  
(8)  
L
RL × RCS  
CCS  
=
The first decision in designing the inductor is to choose the  
core material. There are several possibilities for providing low  
core loss at high frequencies. Two examples are the powder  
cores (Kool-Mμ® from Magnetics, Inc., or Micrometals) and  
the gapped soft ferrite cores (3F3 or 3F4 from Philips). Low  
frequency powdered iron cores should be avoided due to their  
high core loss, especially when the inductor value is relatively  
low and the ripple current is high.  
One has the flexibility of choosing either RCS or RPH(X). It is best  
to start with RPH(X) in the range of 100 kΩ to 200 kΩ, then solve  
for RCS by rearranging Equation 7. Using 100 kΩ for RPH(X)  
RO  
RL  
RCS  
=
× RPH(X)  
The best choice for a core geometry are closed-loop types, such  
as pot cores, PQ, U, and E cores, or toroids. A good compromise  
between price and performance are cores with a toroidal shape.  
There are many useful references for quickly designing a power  
inductor, such as  
1.5 mꢀ  
1.6 mꢀ  
RCS  
=
×100 kꢀ = 93.8 kꢀ  
Next, use equation 8 to solve for CCS:  
300 nH  
CCS  
=
= 2.0 nF  
Magnetic Designer Software Intusoft  
(http://www.intusoft.com)  
1.6 mꢀ × 93.8 kꢀ  
The closest standard value for CCS is 1.8 nF. If the calculated  
value does not happen to be a standard value, then recalculate  
for the closest 1% resistor values for RCS and RPH(X) using the  
final selected value for CCS. This can be quickly calculated by  
multiplying the original values of RCS and RPH(X) by the ratio of  
the calculated CCS to the actual value used. For best accuracy,  
Designing Magnetic Components for High Frequency  
DC-DC Converters, McLyman, Kg Magnetics,  
ISBN 1-883107-00-08  
Selecting a Standard Inductor  
The following power inductor manufacturers can provide design  
consultation and deliver power inductors optimized for high  
power applications upon request:  
CCS should be a 5% or 10% NPO capacitor. For this example, the  
actual values used for RCS and RPH(X) are 104.2 kΩ and 111.1 kΩ.  
The closest standard 1% value for RPH(X) is 110 kΩ. RCS is used  
later and should not be rounded yet.  
Coilcraft  
(847) 639-6400  
www.coilcraft.com  
Rev. A | Page 16 of 24  
 
ADP3181  
1
INDUCTOR DCR TEMPERATURE CORRECTION  
RTH  
=
1
1
With the inductor’s DCR being used as the sense element, and  
copper wire being the source of the DCR, it is necessary to  
compensate for temperature changes of the inductors winding.  
Fortunately, copper has a well-known temperature coefficient  
(TC) of 0.39%/°C.  
1rCS2 rCS1  
Calculate RTH = rTH × RCS, then select the closest value of  
thermistor available. Also compute a scaling factor k based on  
the ratio of the actual thermistor value used relative to the  
computed one:  
If RCS is designed to have an opposite and equal percentage  
change in resistance to that of the wire, it cancels the temp-  
erature variation of the inductor's DCR. Due to the nonlinear  
nature of NTC thermistors, resistors RCS1 and RCS2 are needed  
(see Figure 11) to linearize the NTC and produce the desired  
temperature tracking.  
RTH  
(
ACTUAL  
)
k =  
(10)  
RTH  
(
CALCULATED)  
Calculate values for RCS1 and RCS2 using the following:  
CS1 = RCS × k × rCS1  
R
(11)  
TO  
TO  
SWITCH  
NODES  
V
OUT  
PLACE AS CLOSE AS POSSIBLE  
TO NEAREST INDUCTOR  
OR LOW-SIDE MOSFET  
SENSE  
RCS2 = RCS × ((1k) + (k × rCS2))  
R
TH  
R
PH1  
R
PH2  
R
PH3  
For this example, RCS has already been calculated in the  
ADP3181  
previous section to be 104.2 kΩ, so start with a thermistor value  
of 100 kΩ. Looking through available 0603 size thermistors,  
find a Vishay NTHS0603N01N1003JR NTC thermistor with  
A = 0.3602 and B = 0.09174. From these values compute  
CSCOMP  
R
CS1  
R
CS2  
18  
17  
16  
C
CS  
1.8nF  
KEEP THIS PATH  
AS SHORT AS POSSIBLE  
AND WELL AWAY FROM  
SWITCH NODE LINES  
CSSUM  
CSREF  
r
CS1 = 0.3796, rCS2 = 0.7195, and rTH = 1.0751. Solving for RTH  
yields 112.05 kΩ, so choose 100 kΩ, making k = 0.8925. Finally,  
find RCS1 and RCS2 to be 35.30 kΩ and 78.11 kΩ. Choosing the  
closest 1% resistor values yields 35.7 kΩ and 78.7 kΩ.  
Figure 11. Temperature Compensation Circuit Values  
OUTPUT OFFSET  
The following procedure yields values to use for RCS1, RCS2, and  
RTH (the thermistor value at 25°C) for a given RCS value.  
Intel’s specification requires that at no load the nominal output  
voltage of the regulator be offset to a lower value than the  
nominal voltage corresponding to the VID code. The offset is  
set by a constant current source flowing out of the FB pin (IFB)  
and flowing through RB. The value of RB can be found using  
Equation 12. The closest standard 1% resistor value is 1.33 kΩ.  
1. Select an NTC to be used based on type and value. Because  
there is no value yet, start with a thermistor with a value  
close to RCS. The NTC should also have an initial tolerance  
of better than 5%.  
2. Based on the type of NTC, find its relative resistance value  
at two temperatures. Temperatures that work well are 50°C  
and 90°C. We call these resistance values A (A is RTH(50°C)/  
RTH(25°C)) and B (B is RTH(90°C)/RTH(25°C)). The NTC's  
relative value is always 1 at 25°C.  
VVID VONL  
RB =  
RB =  
(12)  
IFB  
1.5 V1.480 V  
=1.33 kꢀ  
15 ꢁA  
3. Find the relative value of RCS required for each of these  
temperatures. This is based on the percentage change  
needed, which can be 0.39%/°C, initially. These are r1 (r1 is  
1/(1+ TC × (T1 − 25))) and r2 (r2 is 1/(1 + TC × (T2 − 25)))  
COUT SELECTION  
The required output decoupling for the regulator is typically  
recommended by Intel for various processors and platforms.  
Using some simple design guidelines determines what is  
required. These guidelines are based on having both bulk and  
ceramic capacitors in the system.  
where TC = 0.0039, T1 = 50°C, and T2 = 90°C.  
4. Compute the relative values for RCS1, RCS2, and RTH  
A B × r × r2 A × 1B × r2 + B × 1A  
1A × r2 A B  
:
First, select the total amount of ceramic capacitance based on  
the number and type of capacitor to be used. The best location  
for ceramics is inside the socket, with 12 to 18 of size 1,206  
being the physical limit. Others can be also placed along the  
outer edge of the socket.  
(
)
(
)
(
)
)
× r  
1
1
RCS2  
=
(9)  
A ×  
(
1B  
)
)
× r B ×  
(
)
(
1
(
1A  
RCS1  
=
1
A
1rCS2 r r  
1
CS2  
Rev. A | Page 17 of 24  
 
 
ADP3181  
2
Combined ceramic values of 200 μF to 300 μF made up of  
multiple 10 μF or 22 μF capacitors are recommended. Select the  
number of ceramics and find the total ceramic capacitance (CZ).  
LX CZ × RO  
LX 230 ꢁF ×1.3 mΩ2 = 389 pH  
(15)  
In this example, LX is 400 pH for the 10 OSCSON capacitors,  
which satisfies this limitation. If the LX of the chosen bulk  
capacitor bank is too large, the number of MLC capacitors must  
be increased.  
Next, there is an upper limit imposed on the total amount of  
bulk capacitance (CX) when considering the VID-OTF voltage  
stepping of the output (voltage step VV in time tV) and a lower  
limit based on meeting the critical capacitance for load release  
for a given maximum load step IMAX  
:
Note that for this multimode control technique, all ceramic  
designs can be used as long as the conditions of Equations 11,  
12, and 13 are satisfied.  
L × ISTEP  
n× RO ×VVID  
CX(MIN)  
CX  
CZ  
(13)  
POWER MOSFETS  
×
For this example, the N channel power MOSFETs have been  
selected for one high-side switch and two low-side switches per  
phase. The main selection parameters for the power MOSFETs  
are VGS(TH), QG, CISS, CRSS, and RDS(ON). The minimum gate drive  
voltage (the supply voltage to the ADP3110) dictates whether  
standard threshold or logic-level threshold MOSFETs must be  
used. With VGATE ~10 V, logic-level threshold MOSFETs  
(VGS(TH) < 2.5 V) are recommended.  
(
MAX  
)
2
L
VV  
VVID nKRO  
×
1+ tv  
×
1 CZ  
nK2RO2 VVID  
VV  
L
VERR  
VV  
where K =1n  
(14)  
where RX is the ESR of the bulk capacitor bank. To meet the  
transient specification, RX cannot be greater than 3 × RO.  
The maximum output current IO determines the RDS(ON)  
requirement for the low-side (synchronous) MOSFETs. In the  
ADP3181, currents are balanced between phases, so the current  
in each low-side MOSFET is the output current divided by the  
total number of MOSFETs (nSF). With conduction losses being  
dominant, the following expression shows the total power being  
dissipated in each synchronous MOSFET in terms of the ripple  
current per phase (IR) and average total output current (IO).  
If the CX(MIN) is larger than CX(MAX), the system does not meet the  
VID-OTF specification and may require the use of a smaller  
inductor or more phases (the switching frequency may need to  
be increased to keep the output ripple the same).  
This example uses twelve 22 μF 1206 MLC capacitors  
(CZ=264 μF). The VID on-the-fly step change is 12.5 mV in  
5 μs. Solving for the bulk capacitance, assuming that RX = RO,  
and where k = 4.6, yields  
2
2
n × IR  
nSF  
IO  
nSF  
1
12  
P
=
(1D  
)
×
+
×
× RDS  
(16)  
SF  
(
SF  
)
600 nH × 60 A  
3 ×1.3 mΩ ×1.5 V  
Knowing the maximum output current being designed for and  
the maximum allowed power dissipation, the required RDS(ON)  
for the MOSFET can be found. For D pak MOSFETs up to an  
ambient temperature of 50°C, a safe limit for PSF is 1 W  
(assuming 2 D paks) at 120°C junction temperature. Thus, for  
this example (65 A maximum), RDS(SF) (per MOSFET) < 8.7 mW.  
This RDS(SF) is also at a junction temperature of about 120°C, so  
it is important to account for this when making this selection.  
CX  
CX  
MIN )  
230 ꢁF = 5.92 mF  
(
(
600 nH × 250 mV  
3 × 4.62 ×1.3 mΩ2 ×1.5 V  
)
×
MAX  
2
150 ꢁs ×1.5 V × 3 × 4.6 ×1.3 mꢀ  
450 mV × 320 nH  
1+  
1 230 μF  
Another important factor for the synchronous MOSFET is the  
input capacitance and feedback capacitance. The ratio of the  
feedback to input needs to be small (less than 10% is recom-  
mended) to prevent accidentally turning on the synchronous  
MOSFETs when the switch node goes high.  
= 23.9 mF  
Using ten 560 μF OSCONs with an ESR of 12 mΩ each yields  
CX = 5.6 mF with an RX = 1.2 mΩ (making the new limits on CX  
2.4 mF to 8.8 mF, which is still within the acceptable range).  
Also, the time to switch the synchronous MOSFETs off should  
not exceed the nonoverlap dead time of the MOSFET driver  
(40 ns typical for the ADP3110). The output impedance of the  
driver is about 2 Ω and the typical MOSFET input gate resis-  
tances are about 1 Ω to 2 Ω, so a total gate capacitance of less  
than 6,000 pF should be adhered to. Since there are two  
One last check should be made to ensure that the ESL of the  
bulk capacitors (LX) is low enough to limit the initial high  
frequency transient spike. This can be tested using  
Rev. A | Page 18 of 24  
 
ADP3181  
MOSFETs in parallel, limit the input capacitance for each  
synchronous MOSFET to 3,000 pF.  
fSW  
2 × n  
PDRV  
=
×
(
nMF ×QGMF + nSF × QGSF  
)
+ ICC ×V (19)  
CC  
The high-side (main) MOSFET must be able to handle two  
main power dissipation components; conduction and switching  
losses. The switching loss is related to the amount of time it  
takes for the main MOSFET to turn on and off, and to the  
current and voltage that are being switched. Basing the  
switching speed on the rise and fall time of the gate driver  
impedance and MOSFET input capacitance, the following  
expression provides an approximate value for the switching loss  
per main MOSFET, where nMF is the total number of main  
MOSFETs:  
Also shown is the standby dissipation factor (ICC × VCC) for the  
driver. For the ADP3110, the maximum dissipation should be  
less than 400 mW. For our example, with ICC = 7 mA, QGMF  
=
22.8 nC and QGSF = 34.3 nC, there is 260 mW in each driver,  
which is below the 400 mW dissipation limit.  
RAMP RESISTOR SELECTION  
The ramp resistor (RR) is used for setting the size of the internal  
PWM ramp. The value of this resistor is chosen to provide the  
best combination of thermal balance, stability, and transient  
response. The following expression is used for determining the  
optimum value:  
VCC × IO  
nMF  
n
P ( ) = 2 × fSW  
×
× RO ×  
× CISS  
(17)  
S
MF  
nMF  
Here, RG is the total gate resistance (2 Ω for the ADP3110 and  
about 1 Ω for typical high speed switching MOSFETs, making  
RG = 3 Ω) and CISS is the input capacitance of the main  
MOSFET. It is interesting to note that adding more main  
MOSFETs (nMF) does not improve the switching loss per  
MOSFET because the additional gate capacitance slows down  
switching. The best method to reduce switching loss is to use  
lower gate capacitance devices.  
AR × L  
RR =  
3 × AD × RDS ×CR  
(20)  
0.2 × 600 nH  
3 × 5 × 4.2 mꢀ × 5 pF  
RR =  
= 381kꢀ  
where  
AR is the internal ramp amplifier gain  
AD is the current balancing amplifier gain  
RDS is the total low-side MOSFET on-resistance  
CR is the internal ramp capacitor value  
The conduction loss of the main MOSFET is given by the  
following, where RDS(MF) is the on-resistance of the MOSFET:  
2
n× IR 2  
nMF  
IO  
nMF  
1
12  
PC ) = D ×  
+
×
× RDS  
(MF )  
(18)  
(
MF  
The closest standard 1% resistor value is 226 kΩ.  
The internal ramp voltage magnitude can be calculated using  
Typically, for main MOSFETs, the highest speed (low CISS)  
device is desirable, but these usually have higher on-resistance.  
A device that meets the total power dissipation (about 1.5 W for  
a single D pak) when combining the switching and conduction  
losses should be selected.  
AR ×  
RR ×CR × fSW  
(
1D  
)×VVID  
VR =  
(21)  
0.2 ×  
10.125 ×1.5 V  
( )  
VR =  
= 0.51mV  
For this example, an Infineon IPD12N03L was selected as the  
main MOSFET (three total; nMF = 3), with a CISS = 1460 pF  
(max) and RDS(MF) = 14 mΩ (max at TJ = 120ºC), and an  
Infineon IPD06N03L was selected as the synchronous MOSFET  
(six total; nSF = 6), with CISS = 2,370 pF (max), and RDS(SF) = 8.3  
mΩ (max at TJ = 120°C). The synchronous MOSFET CISS is less  
than 3,000°pF, satisfying that requirement. Solving for the  
power dissipation per MOSFET at IO = 65 A and IR = 13 A  
yields 900 mW for each synchronous MOSFET and 1.6 W for  
each main MOSFET. These numbers work well considering  
there is usually more PCB area available for each main  
MOSFET versus each synchronous MOSFET.  
383 kꢀ × 5 pF × 267 kHz  
The size of the internal ramp can be made larger or smaller.  
If it is made larger, stability and transient response improve,  
but thermal balance degrades. Likewise, if the ramp is made  
smaller, thermal balance improves at the sacrifice of transient  
response and stability. The factor of three in the denominator of  
equation 20 sets a ramp size that gives an optimal balance for  
good stability, transient response, and thermal balance.  
One last thing to consider is the power dissipation in the driver  
for each phase. This is best described in terms of the QG for the  
MOSFETs and is given by the following, where QGMF is the total  
gate charge for each main MOSFET and QGSF is the total gate  
charge for each synchronous MOSFET:  
Rev. A | Page 19 of 24  
 
ADP3181  
FEEDBACK LOOP COMPENSATION DESIGN  
CURRENT LIMIT SETPOINT  
Optimized compensation of the ADP3181 allows the best pos-  
sible response of the regulator’s output to a load change. The  
basis for determining the optimum compensation is to make  
the regulator and output decoupling appear as an output impe-  
dance that is entirely resistive over the widest possible fre-  
quency range, including DC, and equal to the droop resistance  
(RO). With the resistive output impedance, the output voltage  
droops in proportion with the load current at any load current  
slew rate; this ensures the optimal positioning and allows the  
minimization of the output decoupling.  
To select the current limit setpoint, we need to find the resistor  
value for RLIM. The current limit threshold for the ADP3181  
is set with a 3 V source (VLIM) across RLIM with a gain of  
10 mV/μA (ALIM). RLIM can be found using the following:  
A
I
LIM ×VLIM  
LIM × RO  
RLIM  
=
(22)  
Here, ILIM is the average current limit for the output of the  
supply. For our example, using 90 A for ILIM, we find RLIM to be  
222.2 kΩ, for which we chose 221 kΩ as the nearest 1% value.  
With the multimode feedback structure of the ADP3181, one  
needs to set the feedback compensation to make the converters  
output impedance working in parallel with the output decoup-  
ling meet this goal. There are several poles and zeros created by  
the output inductor and decoupling capacitors (output filter)  
that need to be compensated for.  
The per phase current limit described earlier has its limit  
determined by the following:  
VCOMP  
) VR VBIAS  
MAX  
IR  
(
IPHLIM  
+
(23)  
AD × RDS  
2
(
MAX)  
A type three compensator on the voltage feedback is adequate  
for proper compensation of the output filter. The expressions  
given below are intended to yield an optimal starting point for  
the design; some minor adjustments may be necessary to  
account for PCB and component parasitic effects.  
For the ADP3181, the maximum COMP voltage (VCOMP(MAX)  
is 3.3 V, the COMP pin bias voltage (VBIAS) is 1.2 V, and the  
current balancing amplifier gain (AD) is 5. Using a VR of 0.7 V  
and a RDS(MAX) of 5.3 mΩ (low-side on-resistance at 150°C), the  
per-phase limit is 52 A.  
)
Using Equations 24 to 28, compute the time constants for all of  
the poles and zeros in the system, where, for the ADP3181, R is  
the PCB resistance from the bulk capacitors to the ceramics and  
RDS is approximately the total low-side MOSFET on-resistance  
per phase at 25°C. For this example, AD is 5, VR equals 1 V, R´ is  
approximately 0.6 mΩ (assuming a 4-layer motherboard), and  
LX is 400 pH for the 10 OSCSON capacitors.  
This limit can be adjusted by changing the ramp voltage, VR.  
Make sure not to set the per-phase limit lower than the average  
per-phase current (ILIM/n).  
RL ×VRT 2 × L ×  
(
1n× D  
)
×VRT  
RE = n× RO + AD × RDS  
+
+
(24)  
VVID  
n×CX × RO ×VVID  
1.6 mꢀ × 0.63V 2 × 600 nH ×  
(
10.375  
)
× 0.63 V  
RE = 3 ×1.3 mꢀ+ 5 × 4.2 mꢀ+  
+
= 37.9 mꢀ  
1.5 V  
3 × 6.56 mF ×1.3 mꢀ ×1.5 V  
375 pH 1.3 mꢀ0.6mꢀ  
RO R'  
RX  
LX  
RO  
(
RO R'  
)
+
×
= 6.56 mF ×  
(
1.3 mꢀ0.6 mꢀ  
)
+
×
= 4.79 ꢁs  
(25)  
(26)  
TA = CX ×  
1.3 mꢀ  
1.0mꢀ  
TB =  
(
RX + R'RO  
)
× CX =  
(
1.0 m+ 0.6 m1.3 mꢀ  
)
× 6.56 mF =1.97ns  
AD × RDS  
2 × fSW  
5 × 4.2 mꢀ  
2 × 267 kHz  
VRT × L −  
0.63 V × 600 nH−  
TC =  
TD =  
=
= 6.2 ꢁs  
(27)  
(28)  
V
VID × RE  
1.5 V × 37.9 mꢀ  
CX × C × R2  
6.56 mF × 230 ꢁF ×1.3 mΩ2  
+ CZ × RO 6.56 mF × 1.3 mꢀ0.6 mꢀ + 230 ꢁF ×1.3 mꢀ  
Z
O
=
= 521 ns  
CX ×  
(
RO R'  
)
(
)
The compensation values can be solved using the following:  
Rev. A | Page 20 of 24  
 
ADP3181  
n× RO ×TA  
RE × RB  
CIN SELECTION AND INPUT CURRENT DI/DT  
REDUCTION  
CA =  
(29)  
In continuous inductor-current mode, the source current of the  
high-side MOSFET is approximately a square wave with a duty  
ratio equal to n × VOUT/VIN and an amplitude of one-nth of the  
maximum output current. To prevent large voltage transients, a  
low ESR input capacitor sized for the maximum rms current  
must be used. The maximum rms capacitor current is given by  
3×1.3 mꢀ × 4.79 ꢁs  
3.79 mꢀ ×1.33 kꢀ  
CA =  
RA =  
CB =  
= 371 pF  
6.2 ꢁs  
CA 371 pF  
TC  
=
=16.7 kꢀ  
(30)  
(31)  
(32)  
1
TB 1.97μs  
RB 1.33kꢀ  
ICRMS = D × IO ×  
=
=1.48nF  
N × D  
(33)  
TD  
521ns  
CFB  
=
=
= 31.2 pF  
1
RA 16.7 kꢀ  
ICRMS = 0.125 × 65A ×  
1 =10.5 A  
3 × 0.125  
Choosing the closest standard values for these components  
yields CA = 820 pF, RA = 7.87 kΩ, CB = 1.2 nF, and CFB = 100 pF.  
These make a good starting point.  
Note that the capacitor manufacturers ripple current ratings are  
often based on only 2,000 hours of life. This makes it advisable  
to further derate the capacitor, or to choose a capacitor rated at  
a higher temperature than required. Several capacitors may be  
placed in parallel to meet size or height requirements in the  
design. In this example, the input capacitor bank is formed by  
three 2,200 μF, 16 V Nichicon capacitors with a ripple current  
rating of 3.5 A each.  
Using the design spreadsheet yields more optimal compen-  
sation values; from the spreadsheet, CA = 680 pF, RA = 5.49 kΩ,  
CB = 1.2 nF, and CFB = 68 pF.  
To reduce the input-current di/dt to below the recommended  
maximum of 0.1 A/μs, an additional small inductor (L > 1 μH @  
15 A) should be inserted between the converter and the supply  
bus. That inductor also acts as a filter between the converter  
and the primary power source.  
Rev. A | Page 21 of 24  
 
ADP3181  
To determine the values of x and y, start with the two load lines,  
OL (smaller slope) and ROH (larger slope). First, follow the  
standard design procedure, which gives the values for RCS1, RCS2  
and CCS for ROL. Tune RPH and CCS. Next, compute the values for  
RCS3 and CCS3 using the following:  
BUILDING A SWITCHABLE VR9/VR10 DESIGN  
R
Some designs may require the ability to work with either a VR9-  
or a VR10-based CPU, because both processors are available in  
the same package/pin count. To accomplish this, the voltage  
regulator must detect which processor is present and set the  
VID DAC and load line accordingly. This can be accomplished  
using the BOOTSELECT output from the CPU. Figure 12  
shows how this signal is used to modify the load line and set the  
CPUID pin of the ADP3181 appropriately.  
,
ROH  
ROL  
RCS3  
=
=
1 × RCS  
(34)  
(35)  
CCS  
CCS3  
ROH  
ROL  
1  
In this case, ROL is 1.5 mΩ and ROH is 3 mΩ.  
TO  
R
TH  
100kΩ, 5%  
PHASE INDUCTORS  
23  
22  
21  
20  
19  
18  
17  
16  
15  
SW1  
SW2  
SW3  
R
PH1  
124kΩ  
R
PH3  
124kΩ  
SW4  
ADP3181  
GND  
R
R
CS2  
CS1  
35.7kΩ 73.2kΩ  
C
R
CS2  
1.5nF  
PH2  
124kΩ  
CSCOMP  
CSSUM  
CSREF  
ILIMIT  
R
CS3  
C
CS1  
2.2nF  
C
CS3  
5VSB  
100nF  
2N7001  
2.7kΩ  
10kΩ  
2N3905  
CPU NWD HI  
CPU PSC HI  
100nF  
10kΩ  
100nF  
BOOTSELECT  
10kΩ  
BSS84  
51Ω  
2N3904  
TO APD3181  
CPUID (PIN 6)  
Figure 12. Connections to Allow Automatic Switching between VR9 and VR10 Operation  
Rev. A | Page 22 of 24  
 
 
ADP3181  
LAYOUT AND COMPONENT PLACEMENT  
Power Circuitry  
The following guidelines are recommended for optimal  
performance of a switching regulator in a PC system.  
The switching power path should be routed on the PCB to  
encompass the shortest possible length to minimize radiated  
switching noise energy (EMI) and conduction losses in the  
board. Failure to take proper precautions often results in EMI  
problems for the entire PC system and noise-related operational  
problems in the power converter control circuitry. The switch-  
ing power path is the loop formed by the current path through  
the input capacitors and the power MOSFETs, including all  
interconnecting PCB traces and planes. The use of short and  
wide interconnection traces is especially critical in this path  
because it minimizes the inductance in the switching loop,  
which can cause high energy ringing. These traces also accom-  
modate the high current demand with minimal voltage loss.  
GENERAL RECOMMENDATIONS  
For good results, at least a 4-layer PCB is recommended.  
This should allow the needed versatility for control circuitry  
interconnections with optimal placement, power planes for  
ground, input, and output power, and wide interconnection  
traces in the rest of the power delivery current paths. Keep in  
mind that each square unit of 1 oz copper trace has a resistance  
of ~0.53 mW at room temperature.  
Whenever high currents must be routed between PCB layers,  
use vias liberally to create several parallel current paths so that  
the resistance and inductance introduced by these current paths  
are minimized and the via current rating is not exceeded.  
Whenever a power-dissipating component (for example, a  
power MOSFET) is soldered to a PCB, the liberal use of vias,  
both directly on the mounting pad and immediately sur-  
rounding it, is recommended. Two important reasons for this  
are improved current rating through the vias and improved  
thermal performance from vias extended to the opposite side of  
the PCB where a plane can more readily transfer the heat to the  
air. Make a mirror image of any pad being used to heat sink the  
MOSFETs on the opposite side of the PCB to achieve the best  
thermal dissipation to the air around the board. To further  
improve thermal performance, use the largest possible pad area.  
If critical signal lines (including the output voltage sense lines of  
the ADP3181) must cross through power circuitry, it is best if a  
signal ground plane can be interposed between those signal  
lines and the traces of the power circuitry. This serves as a  
shield to minimize noise injection into the signals at the  
expense of making signal ground a bit noisier.  
An analog ground plane should be used around and under the  
ADP3181 for referencing the components associated with the  
controller. This plane should be tied to the nearest output  
decoupling capacitor ground and should not tie to any other  
power circuitry to prevent power currents from flowing in it.  
The output power path should also be routed to encompass a  
short distance. The output power path is formed by the current  
path through the inductor, the output capacitors, and the load.  
The components around the ADP3181 should be located close  
to the controller with short traces. The most important traces to  
keep short and away from other traces are the FB and CSSUM  
pins. See Figure 6 for details on layout for the CSSUM node.  
For best EMI containment, a solid power ground plane should  
be used as one of the inner layers extending fully under all the  
power components.  
The output capacitors should be connected as closely as possible  
to the load (or connector) that receives the power (for example,  
a microprocessor core). If the load is distributed, the capacitors  
should also be distributed and generally in proportion to where  
the load is more dynamic.  
Signal Circuitry  
The output voltage is sensed and regulated between the FB pin  
and the FBRTN pin (which connects to the signal ground at the  
load). In order to avoid differential mode noise pickup in the  
sensed signal, the loop area should be small. Thus the FB and  
FBRTN traces should be routed adjacent to each other atop the  
power ground plane back to the controller.  
Avoid crossing any signal lines over the switching power path  
loop as described in the following section.  
Connect the feedback traces from the switch nodes as close as  
possible to the inductor. The CSREF signal should be connected  
to the output voltage at the nearest inductor to the controller.  
Rev. A | Page 23 of 24  
 
ADP3181  
OUTLINE DIMENSIONS  
9.80  
9.70  
9.60  
28  
15  
4.50  
4.40  
4.30  
6.40 BSC  
1
14  
PIN 1  
0.65  
BSC  
1.20 MAX  
0.15  
0.05  
8°  
0°  
0.75  
0.60  
0.45  
0.30  
0.19  
0.20  
0.09  
SEATING  
PLANE  
COPLANARITY  
0.10  
COMPLIANT TO JEDEC STANDARDS MO-153-AE  
Figure 13. 28-Lead Thin Shrink Small Outline Package [TSSOP]  
(RU-28)  
Dimensions shown in millimeters  
0.390  
BSC  
28  
1
15  
14  
0.154  
BSC  
0.236  
BSC  
PIN 1  
0.069  
0.053  
0.065  
0.049  
8°  
0°  
0.010  
0.004  
0.025  
BSC  
0.012  
0.008  
0.050  
0.016  
SEATING  
PLANE  
0.010  
0.006  
COPLANARITY  
0.004  
COMPLIANT TO JEDEC STANDARDS MO-137-AF  
Figure 14. 28-Lead Shrink Small Outline Package [QSOP]  
(RQ-28)  
Dimensions shown in inches  
ORDERING GUIDE  
Part Number  
ADP3181JRUZ-REEL1  
ADP3181JRQZ-RL1, 2  
Temperature Package  
Package Description  
TSSOP—13” Reel  
QSOP—13” Reel  
Package Outline  
RU-28  
RQ-28  
Quantity per Reel  
0°C to +85°C  
0°C to +85°C  
2500  
2500  
1 Z = PB-free part.  
2 VRD10 only.  
©2005 Analog Devices, Inc. All rights reserved. Trademarks and  
registered trademarks are the property of their respective owners.  
D047960–7/05(A)  
Rev. A | Page 24 of 24  
 
 
 
 

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