AD8421TRMZ-EP-R7 [ADI]
3 nV /√Hz, Low Power Instrumentation Amplifier;
| 型号： | AD8421TRMZ-EP-R7 |
| 厂家： | 
ADI |
| 描述： | 3 nV /√Hz, Low Power Instrumentation Amplifier 放大器 光电二极管 |
| 文件： | 总20页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3 nV/√Hz, Low Power
Instrumentation Amplifier
AD8421-EP
Enhanced Product
FEATURES
PIN CONNECTION DIAGRAM
Specified from −55°C to 125°C
AD8421-EP
1
2
3
4
8
7
6
5
–IN
+V
S
0.9 μV/°C maximum input offset voltage drift
5 ppm/°C maximum gain drift (G = 1)
Low power
2.3 mA maximum supply current
Low noise
3.2 nV/√Hz maximum input voltage noise at 1 kHz
200 fA/√Hz current noise at 1 kHz
Excellent ac specifications
R
R
V
OUT
G
G
REF
–V
+IN
S
TOP VIEW
(Not to Scale)
Figure 1.
10µ
1µ
G = 100
2 MHz bandwidth (G = 100)
BEST AVAILABLE
7mA LOW NOISE IN-AMP
0.6 μs settling time to 0.001% (G = 10)
80 dB minimum CMRR at 20 kHz (G = 1)
High precision dc performance
84 dB CMRR minimum (G = 1)
2 nA maximum input bias current
Inputs protected to 40 V from opposite supply
Gain set with a single resistor (G = 1 to 10,000)
100n
10n
BEST AVAILABLE
1mA LOW POWER IN-AMP
ENHANCED PRODUCT FEATURES
AD8421
Supports defense and aerospace applications (AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
R
NOISE ONLY
S
1n
100
1k
10k
100k
1M
SOURCE RESISTANCE, R (Ω)
S
Figure 2. Noise Density vs. Source Resistance
One fabrication site
Enhanced product change notification
Qualification data available on request
The AD8421-EP delivers 3 nV/√Hz input voltage noise and
200 fA/√Hz current noise with only 2 mA quiescent current,
making it an ideal choice for measuring low level signals. For
applications with high source impedance, the AD8421-EP employs
innovative process technology and design techniques to provide
noise performance that is limited only by the sensor.
GENERAL DESCRIPTION
The AD8421-EP is a low cost, low power, extremely low noise,
ultralow bias current, high speed instrumentation amplifier that
is ideally suited for a broad spectrum of signal conditioning and
data acquisition applications. This product features extremely
high CMRR, allowing it to extract low level signals in the presence
of high frequency common-mode noise over a wide
temperature range.
The AD8421-EP uses unique protection methods to ensure robust
inputs while still maintaining very low noise. This protection
allows input voltages up to 40 V from the opposite supply rail
without damage to the part.
The 10 MHz bandwidth, 35 V/μs slew rate, and 0.6 μs settling
time to 0.001% (G = 10) allow the AD8421-EP to amplify high
speed signals and excel in applications that require high channel
count, multiplexed systems. Even at higher gains, the current
feedback architecture maintains high performance; for example,
at G = 100, the bandwidth is 2 MHz and the settling time is
0.8 μs. The AD8421-EP has excellent distortion performance,
making it suitable for use in demanding applications such as
vibration analysis.
A single resistor sets the gain from 1 to 10,000. The reference
pin can be used to apply a precise offset to the output voltage.
The AD8421-EP is specified over the military temperature range of
−55°C to +125°C. It is available in an 8-lead MSOP package.
Additional application and technical information can be found
in the AD8421 data sheet.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks arethe property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
Technical Support
©2013 Analog Devices, Inc. All rights reserved.
www.analog.com
AD8421-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................6
Pin Configuration and Function Descriptions..............................7
Typical Performance Characteristics ..............................................8
Outline Dimensions....................................................................... 18
Ordering Guide .......................................................................... 18
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 6
Thermal Resistance ...................................................................... 6
REVISION HISTORY
5/13—Revision 0: Initial Version
Rev. 0 | Page 2 of 20
Enhanced Product
AD8421-EP
SPECIFICATIONS
VS = 15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1.
Parameter
Test Conditions/ Comments
Min
Typ
Max
Unit
COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ Source Imbalance
G = 1
VCM = −10 V to +10 V
84
dB
dB
dB
dB
dB
G = 10
G = 100
G = 1000
Over Temperature, G = 1
CMRR at 20 kHz
G = 1
G = 10
G = 100
104
124
134
80
TA = −55°C to +125°C
VCM = −10 V to +10 V
80
90
100
100
dB
dB
dB
dB
G = 1000
NOISE
Voltage Noise, 1 kHz1
Input Voltage Noise, eni
Output Voltage Noise, eno
Peak to Peak, RTI
G = 1
G = 10
G = 100 to 1000
Current Noise
VIN+, VIN− = 0 V
3
3.2
60
nV/√Hz
nV/√Hz
f = 0.1 Hz to 10 Hz
2
0.5
0.07
µV p-p
µV p-p
µV p-p
Spectral Density
Peak to Peak, RTI
VOLTAGE OFFSET2
Input Offset Voltage, VOSI
Over Temperature
Average TC
Output Offset Voltage, VOSO
Over Temperature
Average TC
f = 1 kHz
f = 0.1 Hz to 10 Hz
200
18
fA/√Hz
pA p-p
VS = 5 V to 15 V
TA = −55°C to +125°C
70
µV
µV
µV/°C
µV
mV
160
0.9
600
1.5
9
TA = −55°C to +125°C
VS = 2.5 V to 18 V
µV/°C
Offset RTI vs. Supply (PSR)
G = 1
G = 10
G = 100
G = 1000
90
120
120
130
140
dB
dB
dB
dB
110
124
130
INPUT CURRENT
Input Bias Current
Over Temperature
Average TC
Input Offset Current
Over Temperature
Average TC
1
2
8
nA
nA
pA/°C
nA
nA
TA = −55°C to +125°C
TA = −55°C to +125°C
50
0.5
2
3
1
pA/°C
Rev. 0 | Page 3 of 20
AD8421-EP
Enhanced Product
Parameter
DYNAMIC RESPONSE
Small Signal Bandwidth
G = 1
Test Conditions/ Comments
Min
Typ
Max
Unit
−3 dB
10
10
2
MHz
MHz
MHz
MHz
G = 10
G = 100
G = 1000
0.2
Settling Time 0.01%
G = 1
G = 10
G = 100
G = 1000
Settling Time 0.001%
G = 1
G = 10
G = 100
G = 1000
10 V step
10 V step
0.7
0.4
0.6
5
µs
µs
µs
µs
1
µs
µs
µs
µs
0.6
0.8
6
Slew Rate
G = 1 to 100
GAIN3
Gain Range
Gain Error
G = 1
G = 10 to 1000
Gain Nonlinearity
G = 1
35
V/µs
V/V
G = 1 + (9.9 kΩ/RG)
VOUT = 10 V
1
10,000
0.05
0.3
%
%
VOUT = −10 V to +10 V
RL ≥ 2 kΩ
RL = 600 Ω
RL ≥ 600 Ω
VOUT = −5V to +5 V
1
3
50
10
ppm
ppm
ppm
ppm
1
30
5
G = 10 to 1000
Gain vs. Temperature3
G = 1
G > 1
5
−80
ppm/°C
ppm/°C
INPUT
Input Impedance
Differential
Common Mode
Input Operating Voltage Range4
Over Temperature
30||3
30||3
GΩ||pF
GΩ||pF
V
V
V
VS = 2.5 V to 18 V
TA = −55°C
TA = +125°C
−VS + 2.3
−VS + 2.5
−VS + 2.1
+VS − 1.8
+VS − 2.0
+VS − 1.8
OUTPUT
RL = 2 kΩ
Output Swing
Over Temperature
Short-Circuit Current
REFERENCE INPUT
RIN
VS = 2.5 V to 18 V
TA = −55°C to +125°C
−VS + 1.2
−VS + 1.4
+VS − 1.7
+VS − 1.9
V
V
mA
65
20
20
kΩ
µA
V
IIN
VIN+, VIN− = 0 V
24
+VS
Voltage Range
Reference Gain to Output
−VS
1
V/V
0.0001
Rev. 0 | Page 4 of 20
Enhanced Product
AD8421-EP
Parameter
Test Conditions/ Comments
Min
Typ
Max
Unit
POWER SUPPLY
Operating Range
Dual supply
Single supply
2.5
5
18
36
V
V
Quiescent Current
Over Temperature
2
2.3
2.8
mA
mA
TA = −55°C to +125°C
TEMPERATURE RANGE
For Specified Performance
−55
+125
°C
1 Total voltage noise = √(eni2 + (eno/G)2 + eRG2). See the AD8421 data sheet for more information.
2 Total RTI VOS = (VOSI) + (VOSO/G).
3 These specifications do not include the tolerance of the external gain setting resistor, RG. For G > 1, add RG errors to the specifications given in this table.
4 Input voltage range of the AD8421-EP input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
See the Typical Performance Characteristics section for more information.
Rev. 0 | Page 5 of 20
AD8421-EP
Enhanced Product
ABSOLUTE MAXIMUM RATINGS
Table 2.
THERMAL RESISTANCE
θJA is specified for a device in free air using a 4-layer JEDEC
printed circuit board (PCB).
Parameter
Rating
Supply Voltage
18 V
Output Short-Circuit Current Duration
Maximum Voltage at −IN or +IN1
Minimum Voltage at −IN or +IN
Maximum Voltage at REF2
Minimum Voltage at REF
Storage Temperature Range
Operating Temperature Range
Maximum Junction Temperature
ESD
Indefinite
Table 3.
Package
−VS + 40 V
+VS − 40 V
+VS + 0.3 V
−VS − 0.3 V
−65°C to +150°C
−55°C to +125°C
150°C
θJA
Unit
8-Lead MSOP
138.6
°C/W
ESD CAUTION
Human Body Model
2 kV
Charged Device Model
Machine Model
1.25 kV
0.2 kV
1 For voltages beyond these limits, use input protection resistors. See the
AD8421 data sheet for more information.
2 There are ESD protection diodes from the reference input to each supply, so
REF cannot be driven beyond the supplies in the same way that +IN and −IN
can. See the AD8421 data sheet for more information.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Rev. 0 | Page 6 of 20
Enhanced Product
AD8421-EP
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
AD8421-EP
1
2
3
4
8
7
6
5
–IN
+V
S
R
R
V
OUT
G
G
REF
–V
+IN
S
TOP VIEW
(Not to Scale)
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1
2, 3
4
5
6
−IN
RG
Negative Input Terminal.
Gain Setting Terminals. Place resistor across the RG pins to set the gain. G = 1 + (9.9 kΩ/RG).
Positive Input Terminal.
Negative Power Supply Terminal.
Reference Voltage Terminal. Drive this terminal with a low impedance voltage source to level shift the output.
+IN
−VS
REF
VOUT
+VS
7
8
Output Terminal.
Positive Power Supply Terminal.
Rev. 0 | Page 7 of 20
AD8421-EP
Enhanced Product
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VS = ±±5 V, VREF = 0 V, RL = 2 kΩ, unless otherwise noted.
600
600
500
400
300
200
100
0
500
400
300
200
100
0
–60
–40
–20
0
20
40
60
–400
–300
–200
–100
0
100
200
300
400
INPUT OFFSET VOLTAGE (µV)
OUTPUT OFFSET VOLTAGE (µV)
Figure 4. Typical Distribution of Input Offset Voltage
Figure 7. Typical Distribution of Output Offset Voltage
1800
1500
1200
900
600
300
0
1200
1000
800
600
400
200
0
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
INPUT BIAS CURRENT (nA)
INPUT OFFSET CURRENT (nA)
Figure 5. Typical Distribution of Input Bias Current
Figure 8. Typical Distribution of Input Offset Current
1600
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
–20
–15
–10
–5
0
5
10
15
20
–120
–90
–60
–30
0
30
60
90
120
PSRR (µV/V)
CMRR (µV/V)
Figure 6. Typical Distribution of PSRR (G = 1)
Figure 9. Typical Distribution of CMRR (G = 1)
Rev. 0 | Page 8 of 20
Enhanced Product
AD8421-EP
15
4
3
G = 1
V
= ±15V
G = 100
S
10
5
V
= ±5V
S
2
V
= ±12V
S
1
V
= ±2.5V
S
0
0
–1
–2
–3
–4
–5
–10
–15
–15
–10
–5
0
5
10
15
–4
–3
–2
–1
0
1
2
3
4
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 10. Input Common-Mode Voltage vs. Output Voltage;
VS = 12 V and 15 V (G = 1)
Figure 13. Input Common-Mode Voltage vs. Output Voltage;
VS = 2.5 V and 5 V (G = 100)
4
40
G = 1
V
G = 1
= 5V
S
V
= ±5V
S
30
20
3
2
1
0
10
V
= ±2.5V
S
0
–10
–20
–30
–40
–1
–2
–3
–4
–3
–2
–1
0
1
2
3
4
–35 –30 –25 –20 –15 –10 –5
0
5
10 15 20 25 30 35 40
OUTPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 11. Input Common-Mode Voltage vs. Output Voltage;
VS = 2.5 V and 5 V (G = 1)
Figure 14. Input Overvoltage Performance; G = 1, +VS = 5 V, −VS = 0 V
15
30
V
G = 1
= ±15V
V
= ±15V
G = 100
S
S
20
10
10
5
V
= ±12V
S
0
0
–10
–20
–30
–5
–10
–15
–15
–10
–5
0
5
10
15
–25 –20 –15 –10
–5
0
5
10
15
20
25
OUTPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 12. Input Common-Mode Voltage vs. Output Voltage;
VS = 12 V and 15 V (G = 100)
Figure 15. Input Overvoltage Performance; G = 1, VS = 15 V
Rev. 0 | Page 9 of 20
AD8421-EP
Enhanced Product
40
160
140
120
100
V
= 5V
GAIN = 1000
GAIN = 100
GAIN = 10
S
G = 100
30
20
10
GAIN = 1
0
80
60
40
20
0
–10
–20
–30
–40
–35 –30 –25 –20 –15 –10 –5
0
5
10 15 20 25 30 35 40
0.1
1
10
100
1k
10k
100k
1M
FREQUENCY (Hz)
INPUT VOLTAGE (V)
Figure 19. Positive PSRR vs. Frequency
Figure 16. Input Overvoltage Performance; +VS = 5 V, −VS = 0 V, G = 100
160
140
120
100
80
30
GAIN = 1000
GAIN = 100
V
= ±15V
S
G = 100
20
10
GAIN = 10
GAIN = 1
0
60
–10
–20
–30
40
20
0
0.1
1
10
100
1k
10k
100k
1M
–25 –20 –15 –10
–5
0
5
10
15
20
25
FREQUENCY (Hz)
INPUT VOLTAGE (V)
Figure 20. Negative PSRR vs. Frequency
Figure 17. Input Overvoltage Performance; VS = 15 V, G = 100
70
2.5
2.0
GAIN = 1000
60
50
1.5
1.0
GAIN = 100
GAIN = 10
GAIN = 1
40
30
0.5
20
0
10
–0.5
–1.0
–1.5
–2.0
–2.5
0
–10
–20
–30
100
1k
10k
100k
1M
10M
–12 –10 –8 –6 –4 –2
0
2
4
6
8
10 12 14
FREQUENCY (Hz)
COMMON-MODE VOLTAGE (V)
Figure 21. Gain vs. Frequency
Figure 18. Input Bias Current vs. Common-Mode Voltage
Rev. 0 | Page 10 of 20
Enhanced Product
AD8421-EP
6
4
160
GAIN = 1000
REPRESENTATIVE SAMPLES
GAIN = 100
140
2
GAIN = 10
120
0
GAIN = 1
100
–2
–4
–6
–8
80
60
40
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
0.1
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 25. Input Bias Current vs. Temperature
Figure 22. CMRR vs. Frequency
100
80
160
REPRESENTATIVE SAMPLES
GAIN = 1
GAIN = 1000
140
120
100
80
60
GAIN = 100
GAIN = 10
40
20
0
GAIN = 1
–20
–40
–60
–80
–100
60
40
0.1
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 26. Gain vs. Temperature (G = 1)
Figure 23. CMRR vs. Frequency, 1 kΩ Source Imbalance
15
10
5
2.0
1.5
1.0
0.5
0
REPRESENTATIVE SAMPLES
GAIN = 1
0
–5
–10
–15
–0.5
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
0
5
10
15
20
25
30
35
40
45
50
WARM-UP TIME (Seconds)
Figure 27. CMRR vs. Temperature (G = 1)
Figure 24. Change in Input Offset Voltage (VOSI) vs. Warm-Up Time
Rev. 0 | Page 11 of 20
AD8421-EP
Enhanced Product
3.0
45
40
35
30
25
20
15
10
5
V
= ±15V
S
2.5
2.0
1.5
1.0
0.5
0
–SR
+SR
0
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
Figure 28. Supply Current vs. Temperature (G = 1)
Figure 31. Slew Rate vs. Temperature, VS = 5 V (G = 1)
+V
80
60
S
–55°C
–40°C
+25°C
+85°C
+105°C
+125°C
–0.5
–1.0
I
SHORT+
40
–1.5
–2.0
20
0
–2.5
–20
–40
–60
–80
–100
–120
+2.5
+2.0
+1.5
+1.0
+0.5
I
SHORT–
–V
S
2
4
6
8
10
12
14
16
18
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
SUPPLY VOLTAGE (±V )
S
Figure 32. Input Voltage Limit vs. Supply Voltage
Figure 29. Short-Circuit Current vs. Temperature (G = 1)
15
10
5
40
35
30
25
20
15
10
5
–SR
+SR
+125°C
+105°C
+85°C
+25°C
–40°C
–55°C
0
–5
–10
–15
100
0
1k
10k
100k
–55 –40 –25 –10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
LOAD (Ω)
Figure 33. Output Voltage Swing vs. Load Resistance
Figure 30. Slew Rate vs. Temperature, VS = 15 V (G = 1)
Rev. 0 | Page 12 of 20
Enhanced Product
AD8421-EP
100
80
+V
S
–55°C
–40°C
+25°C
+85°C
+105°C
+125°C
GAIN = 1000
–2
60
–4
–6
40
20
R
= 600Ω
L
0
–20
–40
–60
–80
–100
+6
+4
+2
–V
S
0
0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
OUTPUT CURRENT (A)
–10
–8
–6
–4
–2
0
2
4
6
8
10
OUTPUT VOLTAGE (V)
Figure 34. Output Voltage Swing vs. Output Current
Figure 37. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT
=
10 V
5
100
GAIN = 1
GAIN = 1000
4
3
80
60
2
40
1
20
R
= 600Ω
L
0
0
–1
–2
–3
–4
–5
–20
–40
–60
–80
–100
R
R
= 2kΩ
= 10kΩ
L
L
–10
–8
–6
–4
–2
0
2
4
6
8
10
–5
–4
–3
–2
–1
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 35. Gain Nonlinearity (G = 1), RL = 10 kΩ, 2 kΩ
Figure 38. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT
=
5 V
5
4
1k
GAIN = 1
3
2
100
1
GAIN = 1
R
= 600Ω
L
0
–1
–2
–3
–4
–5
GAIN = 10
10
GAIN = 100
GAIN = 1000
1
–10
–8
–6
–4
–2
0
2
4
6
8
10
1
10
100
1k
10k
100k
OUTPUT VOLTAGE (V)
FREQUENCY (Hz)
Figure 36. Gain Nonlinearity (G = 1), RL = 600 Ω
Figure 39. RTI Voltage Noise Spectral Density vs. Frequency
Rev. 0 | Page 13 of 20
AD8421-EP
Enhanced Product
30
25
20
15
10
5
G = 1000, 40nV/DIV
G = 1, 1µV/DIV
1s/DIV
0
10
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 40. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1, G = 1000)
Figure 43. Large Signal Frequency Response
10k
1k
100
10
5V/DIV
720ns TO 0.01%
1.12µs TO 0.001%
0.002%/DIV
1µs/DIV
0.1
1
10
100
1k
10k
100k
FREQUENCY (Hz)
Figure 41. Current Noise Spectral Density vs. Frequency
Figure 44. Large Signal Pulse Response and Settling Time (G = 1),
10 V Step, VS = 15 V, RL = 2 kΩ, CL = 100 pF
5V/DIV
420ns TO 0.01%
604ns TO 0.001%
0.002%/DIV
5pA/DIV
1s/DIV
1µs/DIV
Figure 42. 0.1 Hz to 10 Hz Current Noise
Figure 45. Large Signal Pulse Response and Settling Time (G = 10),
10 V Step, VS = 15 V, RL = 2 kΩ, CL = 100 pF
Rev. 0 | Page 14 of 20
Enhanced Product
AD8421-EP
GAIN = 1
5V/DIV
704ns TO 0.01%
764ns TO 0.001%
0.002%/DIV
50mV/DIV
1µs/DIV
1µs/DIV
Figure 46. Large Signal Pulse Response and Settling Time (G = 100),
10 V Step, VS = 15 V, RL = 2 kΩ, CL = 100 pF
Figure 49. Small Signal Pulse Response (G = 1), RL = 600 Ω, CL = 100 pF
GAIN = 10
5V/DIV
3.8µs TO 0.01%
5.76µs TO 0.001%
0.002%/DIV
50mV/DIV
1µs/DIV
4µs/DIV
Figure 47. Large Signal Pulse Response and Settling Time (G = 1000),
10 V Step, VS = 15 V, RL = 2 kΩ, CL = 100 pF
Figure 50. Small Signal Pulse Response (G = 10), RL = 600 Ω, CL = 100 pF
2500
2000
1500
GAIN = 100
SETTLED TO 0.001%
1000
500
0
SETTLED TO 0.01%
20mV/DIV
1µs/DIV
GAIN = 1
18 20
2
4
6
8
10
12
14
16
STEP SIZE (V)
Figure 51. Small Signal Pulse Response (G = 100), RL = 600 Ω, CL = 100 pF
Figure 48. Settling Time vs. Step Size (G = 1), RL = 2 kΩ, CL = 100 pF
Rev. 0 | Page 15 of 20
AD8421-EP
Enhanced Product
–40
–50
NO LOAD
V
= 10V p-p
GAIN = 1000
OUT
R
R
= 2kΩ
= 600Ω
L
L
–60
–70
–80
–90
–100
–110
–120
–130
–140
20mV/DIV
2µs/DIV
–150
10
100
1k
10k
FREQUENCY (Hz)
Figure 52. Small Signal Pulse Response (G = 1000), RL = 600 Ω, CL = 100 pF
Figure 55. Third Harmonic Distortion vs. Frequency (G = 1)
–40
100pF
G = 1
NO LOAD
V
= 10V p-p
OUT
50pF
20pF
NO LOAD
R
R
= 2kΩ
= 600Ω
L
L
–50
–60
–70
–80
–90
–100
–110
–120
50mV/DIV
1µs/DIV
10
100
1k
10k
FREQUENCY (Hz)
Figure 53. Small Signal Response with Various Capacitive Loads (G = 1),
RL = Infinity
Figure 56. Second Harmonic Distortion vs. Frequency (G = 1000)
–40
–40
R
≥ 600Ω
V
= 10V p-p
L
OUT
V
= 10V p-p
R
≥ 600Ω
OUT
L
–50
–60
–50
–60
–70
–80
–70
–90
–80
–100
–110
–120
–130
–140
–150
–90
–100
–110
–120
10
100
1k
10k
10
100
1k
10k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 54. Second Harmonic Distortion vs. Frequency (G = 1)
Figure 57. Third Harmonic Distortion vs. Frequency (G = 1000)
Rev. 0 | Page 16 of 20
Enhanced Product
AD8421-EP
–20
G = 1
G = 10
V
= 10V p-p
OUT
–30
R = 2kΩ
L
G = 100
–40
G = 1000
–50
–60
–70
–80
–90
–100
–110
–120
–130
–140
10
100
1k
10k
FREQUENCY (Hz)
Figure 58. THD vs. Frequency
Rev. 0 | Page 17 of 20
AD8421-EP
Enhanced Product
OUTLINE DIMENSIONS
3.20
3.00
2.80
8
1
5
4
5.15
4.90
4.65
3.20
3.00
2.80
PIN 1
IDENTIFIER
0.65 BSC
0.95
0.85
0.75
15° MAX
1.10 MAX
0.80
0.55
0.40
0.15
0.05
0.23
0.09
6°
0°
0.40
0.25
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-AA
Figure 59. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Temperature Range
Package Description
Package Option
Branding
Y4T
Y4T
AD8421TRMZ-EP
AD8421TRMZ-EP-R7
−55°C to +125°C
−55°C to +125°C
8-Lead Mini Small Outline Package [MSOP]
8-Lead Mini Small Outline Package [MSOP]
RM-8
RM-8
1 Z = RoHS Compliant Part.
Rev. 0 | Page 18 of 20
Enhanced Product
NOTES
AD8421-EP
Rev. 0 | Page 19 of 20
AD8421-EP
NOTES
Enhanced Product
©2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D11139-0-5/12(0)
Rev. 0 | Page 20 of 20
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