AD7545JP [ADI]

CMOS 12-Bit Buffered Multiplying DAC; CMOS 12位缓冲乘法DAC
AD7545JP
型号: AD7545JP
厂家: ADI    ADI
描述:

CMOS 12-Bit Buffered Multiplying DAC
CMOS 12位缓冲乘法DAC

文件: 总8页 (文件大小:197K)
中文:  中文翻译
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CMOS 12-Bit  
Buffered Multiplying DAC  
a
AD7545  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
12-Bit Resolution  
R
FB  
20  
Low Gain TC: 2 ppm/؇C typ  
Fast TTL Compatible Data Latches  
Single +5 V to +15 V Supply  
Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount  
Packages  
AD7545  
R
1
2
OUT 1  
AGND  
12-BIT  
MULTIPLYING DAC  
V
19  
REF  
Latch Free (Schottky Protection Diode Not Required)  
Low Cost  
12  
Ideal for Battery Operated Equipment  
WR 17  
16  
18  
3
V
DD  
INPUT DATA LATCHES  
CS  
DGND  
12  
DB11–DB0  
(PINS 4–15)  
GENERAL DESCRIPTION  
The AD7545 is particularly suitable for single supply operation  
and applications with wide temperature variations.  
The AD7545 is a monolithic 12-bit CMOS multiplying DAC  
with onboard data latches. It is loaded by a single 12-bit wide  
word and directly interfaces to most 12- and 16-bit bus systems.  
Data is loaded into the input latches under the control of the CS  
and WR inputs; tying these control inputs low makes the input  
latches transparent, allowing direct unbuffered operation of the  
DAC.  
The AD7545 can be used with any supply voltage from +5 V to  
+15 V. With CMOS logic levels at the inputs the device dissi-  
pates less than 0.5 mW for VDD = +5 V.  
PIN CONFIGURATIONS  
LCCC  
DIP  
PLCC  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
OUT 1  
AGND  
DGND  
DB11 (MSB)  
DB10  
R
FB  
V
REF  
2
3
1
20 19  
2
3
1 20 19  
3
V
DD  
PIN 1  
IDENTIFIER  
DB11 (MSB)  
DB10  
4
5
6
7
8
18  
V
DD  
18  
17  
16  
15  
V
4
DB11 (MSB)  
DD  
4
WR  
17 WR  
DB10 5  
DB9 6  
DB8 7  
DB7 8  
WR  
AD7545  
TOP VIEW  
(Not to Scale)  
AD7545  
TOP VIEW  
(Not to Scale)  
5
CS  
AD7545  
TOP VIEW  
(Not to Scale)  
DB9  
16  
CS  
CS  
DB0 (MSB)  
DB1  
DB9  
6
DB0 (LSB)  
DB8  
15 DB0 (LSB)  
14 DB1  
DB8  
7
14 DB1  
DB7  
DB2  
8
DB7  
9
10 11 12 13  
9
10 11 12 13  
9
DB6  
DB3  
DB4  
DB5  
10  
REV. A  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 617/329-4700  
Fax: 617/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 1997  
(VREF = +10 V, VOUT1 = O V, AGND = DGND unless otherwise noted)  
AD7545–SPECIFICATIONS  
VDD = +5 V  
Limits  
TA = + 25؇C TMIN, TMAX  
VDD = +15 V  
Limits  
TA = + 25؇C TMIN, TMAX  
1
1
Parameter  
Version  
Units  
Test Conditions/Comments  
STATIC PERFORMANCE  
Resolution  
All  
J, A, S  
12  
2
12  
2
12  
2
12  
2
Bits  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
K, B, T  
L, C, U  
GL, GC, GU  
J, A, S  
K, B, T  
L, C, U  
GL, GC, GU  
J, A, S  
1
1/2  
1/2  
4
1
1
1
20  
10  
5
1
1/2  
1/2  
4
1
1
1
20  
10  
6
1
1/2  
1/2  
4
1
1
1
25  
15  
10  
6
1
1/2  
1/2  
4
1
1
1
25  
15  
10  
7
Differential Nonlinearity  
10-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
DAC Register Loaded with  
1111 1111 1111  
Gain Error (Using Internal RFB)2  
K, B, T  
L, C, U  
GL, GC, GU  
Gain Error Is Adjustable Using  
the Circuits of Figures 4, 5, and 6  
1
2
Gain Temperature Coefficient3  
Gain/Temperature  
All  
5
5
10  
10  
ppm/°C max  
Typical Value is 2 ppm/°C for VDD = +5 V  
DC Supply Rejection3  
Gain/VDD  
All  
0.015  
10  
10  
0.03  
50  
50  
0.01  
10  
10  
0.02  
50  
50  
% per % max VDD  
=
5%  
Output Leakage Current at OUT1  
J, K, L, GL  
A, B, C, GC  
S, T, U, GU  
nA max  
nA max  
nA max  
DB0–DB11 = 0 V; WR, CS = 0 V  
10  
200  
10  
200  
DYNAMIC PERFORMANCE  
Current Settling Time3  
All  
2
2
2
2
µs max  
To 1/2 LSB. OUT1 Load = 100 . DAC  
Output Measured from Falling Edge of  
WR, CS = 0.  
Propagation Delay3 (from Digital  
Input Change to 90%  
of Final Analog Output)  
Digital-to-Analog Glitch Inpulse  
AC Feedthrough5  
All  
All  
300  
400  
250  
250  
ns max  
nV sec typ  
OUT1 Load = 100 , CEXT = 13 pF4  
VREF = AGND  
At OUT1  
All  
All  
5
5
5
5
mV p-p typ  
VREF = 10 V, 10 kHz Sinewave  
REFERENCE INPUT  
Input Resistance  
7
25  
7
25  
7
25  
7
25  
kmin  
kmax  
Input Resistance TC = –300 ppm/°C typ  
Typical Input Resistance = 11 kΩ  
(Pin 19 to GND)  
ANALOG OUTPUT  
Output Capacitance3  
COUT1  
All  
70  
200  
70  
200  
70  
200  
70  
200  
pF max  
pF max  
DB0–DB11 = 0 V, WR, CS = 0 V  
DB0–DB11 = VDD, WR, CS = 0 V  
COUT1  
DIGITAL INPUTS  
Input High Voltage  
VIH  
All  
All  
All  
2.4  
0.8  
1
2.4  
0.8  
10  
13.5  
1.5  
1
13.5  
1.5  
10  
V min  
V max  
µA max  
Input Low Voltage  
VIL  
Input Current6  
IIN  
VIN = 0 or VDD  
Input Capacitance3  
DB0–DB11  
WR, CS  
All  
All  
5
20  
5
20  
5
20  
5
20  
pF max  
pF max  
VIN = 0  
VIN = 0  
SWITCHING CHARACTERISTICS7  
Chip Select to Write Setup Time  
tCS  
All  
280  
200  
380  
270  
180  
120  
200  
150  
ns min  
ns typ  
See Timing Diagram  
Chip Select to Write Hold Time  
tCH  
All  
All  
All  
0
0
0
0
ns min  
Write Pulse Width  
tWR  
250  
175  
140  
100  
400  
280  
210  
150  
160  
100  
90  
240  
170  
120  
80  
ns min  
ns typ  
ns min  
ns typ  
tCS tWR, tCH 0  
Data Setup Time  
tDS  
60  
Data Hold Time  
tDH  
All  
All  
10  
10  
10  
10  
ns min  
POWER SUPPLY  
IDD  
2
100  
10  
2
500  
10  
2
100  
10  
2
500  
10  
mA max  
µA max  
µA typ  
All Digital Inputs VIL or VIH  
All Digital Inputs 0 V to VDD  
All Digital Inputs 0 V to VDD  
NOTES  
1Temperature range as follows: J, K, L, GL versions, 0°C to +70°C; A, B, C, GC versions, –25°C to +85°C; S, T, U GU versions, –55°C to +125°C.  
2This includes the effect of 5 ppm max gain TC.  
3Guaranteed but not tested.  
4DB0–DB11 = 0 V to VDD or VDD to 0 V.  
5Feedthrough can be further reduced by connecting the metal lid on the ceramic package (Suffix D) to DGND.  
6Logic inputs are MOS gates. Typical input current (+25°C) is less than 1 nA.  
7Sample tested at +25°C to ensure compliance.  
Specifications subject to change without notice.  
–2–  
REV. A  
AD7545  
tCH  
MODE SELECTION  
HOLD MODE:  
tCS  
V
DD  
WRITE MODE:  
CHIP  
SELECT  
0
CS AND WR LOW, DAC RESPONDS  
TO DATA BUS (DB0DB11) INPUTS.  
EITHER CS OR WR HIGH, DATA BUS  
(DB0DB11) IS LOCKED OUT; DAC  
HOLDS LAST DATA PRESENT WHEN  
tWR  
V
WR OR CS ASSUMED HIGH STATE.  
DD  
WRITE  
NOTES:  
DD  
0
V
= +5V; t = t = 20ns  
r f  
tDS  
DATA VALID  
tDH  
V
= +15V; t = t = 40ns  
r f  
DD  
ALL INPUT SIGNAL RISE AND FALL TIMES MEASURED FROM 10% TO  
90% OF V  
V
DD  
V
V
IL  
IH  
.
DATA IN  
(DB0DB11)  
DD  
TIMING MEASUREMENT REFERENCE LEVEL IS V + V /2.  
IH IL  
0
Write Cycle Timing Diagram  
ABSOLUTE MAXIMUM RATINGS*  
(TA = + 25°C unless otherwise noted)  
Commercial (J, K, L, GL) Grades . . . . . . . . 0°C to +70°C  
Industrial (A, B, C, GC) Grades . . . . . . . . –25°C to +85°C  
Extended (S, T, U, GU) Grades . . . . . . . –55°C to +125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300°C  
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3, +17 V  
Digital Input Voltage to DGND . . . . . . . –0.3 V, VDD +0.3 V  
VRFB, VREF to DGND . . . . . . . . . . . . . . . . . . . . . . . . .  
25 V  
*Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
V
PIN1 to DGND . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD +0.3 V  
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V  
Power Dissipation (Any Package) to +75°C . . . . . . . 450 mW  
Derates above +75°C . . . . . . . . . . . . . . . . . . . . . . 6 mW/°C  
Operating Temperature  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD7545 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
ORDERING GUIDE1  
TERMINOLOGY  
RELATIVE ACCURACY  
Maximum  
Gain Error  
The amount by which the D/A converter transfer function  
differs from the ideal transfer function after the zero and full-  
scale points have been adjusted. This is an endpoint linearity  
Temperature  
Range  
Relative  
Accuracy  
TA = +25؇C Package  
Model2  
VDD = +5 V Options3  
measurement.  
AD7545JN  
AD7545AQ  
AD7545SQ  
AD7545KN  
AD7545BQ  
AD7545TQ  
AD7545LN  
AD7545CQ  
AD7545UQ  
AD7545GLN 0°C to +70°C  
AD7545GCQ –25°C to +85°C  
AD7545GUQ –55°C to +125°C  
AD7545JP  
AD7545SE  
AD7545KP  
AD7545TE  
AD7545LP  
AD7545UE  
AD7545GLP  
0°C to +70°C  
2 LSB  
2 LSB  
2 LSB  
1 LSB  
1 LSB  
1 LSB  
1/2 LSB  
1/2 LSB  
1/2 LSB  
1/2 LSB  
1/2 LSB  
1/2 LSB  
2 LSB  
2 LSB  
1 LSB  
1 LSB  
20 LSB  
20 LSB  
20 LSB  
10 LSB  
10 LSB  
10 LSB  
5 LSB  
5 LSB  
5 LSB  
1 LSB  
1 LSB  
1 LSB  
20 LSB  
20 LSB  
10 LSB  
10 LSB  
5 LSB  
5 LSB  
1 LSB  
1 LSB  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
P-20A  
E-20A  
P-20A  
E-20A  
P-20A  
E-20A  
P-20A  
E-20A  
–25°C to +85°C  
–55°C to +125°C  
0°C to +70°C  
DIFFERENTIAL NONLINEARITY  
The difference between the measured change and the ideal  
change between any two adjacent codes. If a device has a differ-  
ential nonlinearity of less than 1 LSB it will be monotonic, i.e.,  
the output will always increase for an increase in digital code  
applied to the D/A converter.  
–25°C to +85°C  
–55°C to +125°C  
0°C to +70°C  
–25°C to +85°C  
–55°C to +125°C  
PROPAGATION DELAY  
This is a measure of the internal delay of the circuit and is mea-  
sured from the time a digital input changes to the point at which  
0°C to +70°C  
–55°C to +125°C  
0°C to +70°C  
the analog output at OUT1 reaches 90% of its final value.  
–55°C to +125°C  
0°C to +70°C  
1/2 LSB  
1/2 LSB  
1/2 LSB  
1/2 LSB  
DIGITAL-TO-ANALOG GLITCH IMPULSE  
–55°C to +125°C  
0°C to +70°C  
This is a measure of the amount of charge injected from the  
digital inputs to the analog outputs when the inputs change  
state. It is usually specified as the area of the glitch in nV secs  
and is measured with VREF = AGND and an ADLH0032CG as  
the output op amp, C1 (phase compensation) = 33 pF.  
AD7545GUE –55°C to +125°C  
NOTES  
1Analog Devices reserves the right to ship either ceramic (D-20) in lieu of cerdip  
packages (Q-20).  
2To order MIL-STD-883, Class B process parts, add /883B to part number.  
Contact local sales office for military data sheet. For U.S. Standard Military  
DRAWING (SMD) see DESC drawing 5962-87702.  
3E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip  
Carrier; Q = Cerdip.  
REV. A  
–3–  
AD7545  
CIRCUIT INFORMATION—D/A CONVERTER SECTION  
Figure 1 shows a simplified circuit of the D/A converter section  
of the AD7545 and Figure 2 gives an approximate equivalent  
circuit. Note that the ladder termination resistor is connected to  
AGND. R is typically 11 k.  
power supply. To minimize power supply currents it is recom-  
mended that the digital input voltages be as close as practicably  
possible to the supply rails (VDD and DGND).  
The AD7545 may be operated with any supply voltage in the  
range 5 VDD 15 volts. With VDD = +15 V the input logic  
levels are CMOS compatible only, i.e., 1.5 V and 13.5 V.  
V
REF  
R
R
R
R
2R  
2R  
2R  
2R  
2R  
2R  
BASIC APPLICATIONS  
Figures 4 and 5 show simple unipolar and bipolar circuits using  
the AD7545. Resistor R1 is used to trim for full scale. The  
“G” versions (AD7545GLN, AD7545GCQ, AD7545GUD)  
have a guaranteed maximum gain error of 1 LSB at +25°C  
(VDD = +5 V), and in many applications it should be possible to  
dispense with gain trim resistors altogether. Capacitor C1 provides  
phase compensation and helps prevent overshoot and ringing when  
using high speed op amps. Note that all the circuits of Figures 4, 5  
and 6 have constant input impedance at the VREF terminal.  
R
FB  
OUT 1  
AGND  
DB11  
(MSB)  
DB10  
DB9  
DB1  
DB0  
(LSB)  
Figure 1. Simplified D/A Circuit of AD7545  
The binary weighted currents are switched between the OUT1  
bus line and AGND by N-channel switches, thus maintaining a  
constant current in each ladder leg independent of the switch  
state.  
The circuit of Figure 1 can either be used as a fixed reference  
D/A converter so that it provides an analog output voltage in the  
range 0 to –VIN (note the inversion introduced by the op amp),  
or VIN can be an ac signal in which case the circuit behaves as  
an attenuator (2-Quadrant Multiplier). VIN can be any voltage  
in the range –20 VIN + 20 volts (provided the op amp can  
The capacitance at the OUT1 bus line, COUT1, is code depen-  
dent and varies from 70 pF (all switches to AGND) to 200 pF  
(all switches to OUT1).  
handle such voltages) since VREF is permitted to exceed VDD  
.
Table II shows the code relationship for the circuit of Figure 4.  
One of the current switches is shown in Figure 2. The input  
resistance at VREF (Figure 1) is always equal to RLDR (RLDR is  
the R/2R ladder characteristic resistance and is equal to value  
“R”). Since RIN at the VREF pin is constant, the reference termi-  
nal can be driven by a reference voltage or a reference current,  
ac or dc, of positive or negative polarity. (If a current source is  
used, a low temperature coefficient external RFB is recommended  
to define scale factor.)  
V
DD  
R2  
*
C1  
33pF  
18  
20  
V
R
FB  
DD  
1
2
V
OUT1  
V
IN  
OUT  
19  
V
REF  
AD7545  
R1*  
AGND  
3
AD544L  
(SEE TEXT)  
DGND  
ANALOG  
COMMON  
TO LADDER  
DB11DB0  
*REFER TO TABLE I  
FROM  
INTERFACE  
LOGIC  
Figure 4. Unipolar Binary Operation  
Table I. Recommended Trim Resistor Values vs. Grades for  
VDD = +5 V  
AGND  
OUT 1  
Figure 2. N-Channel Current Steering Switch  
Trim  
Resistor  
J/A/S  
K/B/T  
L/C/U  
GL/GC/GU  
CIRCUIT INFORMATION—DIGITAL SECTION  
Figure 3 shows the digital structure for one bit.  
R1  
R2  
500 Ω  
150 Ω  
200 Ω  
68 Ω  
100 Ω  
33 Ω  
20 Ω  
6.8 Ω  
The digital signals CONTROL and CONTROL are generated  
from CS and WR.  
Table II. Unipolar Binary Code Table for Circuit of Figure 4  
Binary Number in DAC Register Analog Output  
TO AGND SWITCH  
V
IN  
TO OUT1 SWITCH  
4095  
4096  
INPUT BUFFERS  
1 1 1 1  
1 1 1 1  
1 1 1 1  
–VIN  
VIN  
VIN  
CONTROL  
CONTROL  
2048  
4096  
Figure 3. Digital Input Structure  
1 0 0 0  
0 0 0 0  
0 0 0 0  
= 1/2 VIN  
The input buffers are simple CMOS inverters designed so that  
when the AD7545 is operated with VDD = 5 V, the buffers con-  
vert TTL input levels (2.4 V and 0.8 V) into CMOS logic levels.  
When VIN is in the region of 2.0 volts to 3.5 volts, the input  
buffers operate in their linear region and draw current from the  
1
0 0 0 0  
0 0 0 0  
0 0 0 0  
0 0 0 0  
0 0 0 1  
0 0 0 0  
4096  
0 Volts  
4–  
REV. A  
AD7545  
Table IV. 12-Plus Sign Magnitude Code Table for Circuit of  
Figure 6  
Figure 5 and Table III illustrate the recommended circuit and  
code relationship for bipolar operation. The D/A function itself  
uses offset binary code and inverter U1 on the MSB line con-  
verts twos complement input code to offset binary code. If ap-  
propriate; inversion of the MSB may be done in software using  
an exclusive OR instruction and the inverter omitted. R3, R4  
and R5 must be selected to match within 0.01% and they should  
be the same type of resistor (preferably wire-wound or metal  
foil), so their temperature coefficients match. Mismatch of R3  
value to R4 causes both offset and full-scale error. Mismatch of  
R5 and R4 and R3 causes full-scale error.  
Sign  
Bit  
Binary Number in DAC  
MSB LSB  
Analog Output, VOUT  
4095  
4096  
0
1 1 1 1 1 1 1 1 1 1 1 1  
+ VIN ×  
0
1
0 0 0 0 0 0 0 0 0 0 0 0  
0 0 0 0 0 0 0 0 0 0 0 0  
0 Volts  
0 Volts  
4095  
4096  
VDD  
R2*  
1
1 1 1 1 1 1 1 1 1 1 1 1  
VIN ×  
R4  
20k  
C1  
33pF  
18  
20  
R5  
Note: Sign bit of 0connects R3 to GND.  
VDD  
RFB  
R3  
20kΩ  
1
2
OUT1  
10kΩ  
VREF  
19  
A1  
AD544L  
AD7545  
VIN  
R1*  
AGND  
A2  
AD544J  
R6  
5kΩ  
APPLICATIONS HINTS  
VOUT  
DB11  
4
DB10DB0  
Output Offset: (CMOS D/A converters exhibit a code depen-  
dent output resistance which, in turn, causes a code dependent  
amplifier noise gain. The effect is a code dependent differential  
nonlinearity term at the amplifier output that depends on VOS  
where VOS is the amplifier input offset voltage. To maintain  
monotonic operation it is recommended that VOS be no greater  
than 25 × 106) (VREF) over the temperature range of operation.  
Suitable op amps are AD517L and AD544L. The AD517L is  
best suited for fixed reference applications with low bandwidth  
requirements: it has extremely low offset (50 µV) and in most  
applications will not require an offset trim. The AD544L has a  
much wider bandwidth and higher slew rate and is recommended  
for multiplying and other applications requiring fast settling. An  
offset trim on the AD544L may be necessary in some circuits.  
10%  
U1  
(SEE TEXT)  
11  
12  
ANALOG  
COMMON  
*
FOR VALUES OF R1 AND R2  
SEE TABLE I.  
DATA INPUT  
Figure 5. Bipolar Operation (Twos Complement Code)  
Table III. Twos Complement Code Table for Circuit of  
Figure 5  
Data Input  
Analog Output  
2047  
2048  
0 1 1 1  
1 1 1 1  
1 1 1 1  
+VIN  
×
General Ground Management: AC or transient voltages  
between AGND and DGND can cause noise injection into the  
analog output. The simplest method of ensuring that voltages at  
AGND and DGND are equal is to tie AGND and DGND  
together at the AD7545. In more complex systems where the  
AGND and DGND intertie is on the backplane, it is recom-  
mended that two diodes be connected in inverse parallel  
between the AD7545 AGND and DGND pins (IN914 or  
equivalent).  
1
0 0 0 0  
0 0 0 0  
0 0 0 0  
0 0 0 0  
0 0 0 1  
0 0 0 0  
+VIN  
×
2048  
0 Volts  
1
1 1 1 1  
1 0 0 0  
1 1 1 1  
0 0 0 0  
1 1 1 1  
0 0 0 0  
VIN  
VIN  
×
2048  
2048  
2048  
×
Digital Glitches: When WR and CS are both low the latches  
are transparent and the D/A converter inputs follow the data  
inputs. In some bus systems, data on the data bus is not always  
valid for the whole period during which WR is low and as a  
result invalid data can briefly occur at the D/A converter inputs  
during a write cycle. Such invalid data can cause unwanted  
glitches at the output of the D/A converter. The solution to this  
problem, if it occurs, is to retime the write pulse WR so that it  
only occurs when data is valid.  
Figure 6 shows an alternative method of achieving bipolar out-  
put. The circuit operates with sign plus magnitude code and has  
the advantage of giving 12-bit resolution in each quadrant, com-  
pared with 11-bit resolution per quadrant for the circuit of Fig-  
ure 5. The AD7592 is a fully protected CMOS change-over  
switch with data latches. R4 and R5 should match each other to  
0.01% to maintain the accuracy of the D/A converter. Mismatch  
between R4 and R5 introduces a gain error.  
Another cause of digital glitches is capacitive coupling from the  
digital lines to the OUT1 and AGND terminals. This should be  
minimized by screening the analog pins of the AD7545 (Pins 1,  
2, 19, 20) from the digital pins by a ground track run between  
Pins 2 and 3 and between Pins 18 and 19 of the AD7545. Note  
how the analog pins are at one end of the package and separated  
from the digital pins by VDD and DGND to aid screening at  
the board level. On-chip capacitive coupling can also give rise  
to crosstalk from the digital-to-analog sections of the AD7545,  
particularly in circuits with high currents and fast rise and  
fall times. This type of crosstalk is minimized by using  
VDD  
R2  
*
R4  
R5  
C1  
20k  
20kΩ  
18  
20  
33pF  
VDD  
RFB  
VOUT  
1
2
OUT1  
AGND  
3
R3  
VREF  
19  
A2  
A1  
AD544L  
10kΩ  
AD7545  
VIN  
R1*  
AD544J  
10%  
DB11DB0  
1/2 AD7592JN  
ANALOG  
COMMON  
12  
SIGN BIT  
*
FOR VALUES OF R1 AND R2  
SEE TABLE I.  
Figure 6. 12-Bit Plus Sign Magnitude D/A Converter  
REV. A  
5–  
AD7545  
VDD = +5 volts. However, great care should be taken to ensure  
that the +5 V used to power the AD7545 is free from digitally  
induced noise.  
+2  
+1  
Temperature Coefficients: The gain temperature coefficient  
of the AD7545 has a maximum value of 5 ppm/°C and a typical  
value of 2 ppm/°C. This corresponds to worst case gain shifts of  
2 LSBs and 0.8 LSBs respectively over a 100°C temperature  
range. When trim resistors Rl and R2 are used to adjust full-  
scale range, the temperature coefficient of R1 and R2 should  
also be taken into account. The reader is referred to Analog  
Devices Application Note Gain Error and Gain Temperature  
Coefficient of CMOS Multiplying DACs,Publication Number  
E630106/81.  
0
1  
2  
0
5
10  
15  
SINGLE SUPPLY OPERATION  
V
Volts  
DD  
The ladder termination resistor of the AD7545 (Figure 1) is  
connected to AGND. This arrangement is particularly suitable  
for single supply operation because OUT1 and AGND may be  
biased at any voltage between DGND and VDD. OUT1 and  
AGND should never go more than 0.3 volts less than DGND or  
an internal diode will be turned on and a heavy current may  
flow which will damage the device. (The AD7545 is, however,  
protected from the SCR latch-up phenomenon prevalent in  
many CMOS devices.)  
Figure 8. Differential Nonlinearity vs. VDD for Figure 7  
Circuit. Reference Voltage = 2.5 Volts. Shaded Area Shows  
Range of Values of Differential Nonlinearity that Typically  
Occur for L, C and U Grades.  
0.5  
0.0  
Figure 7 shows the AD7545 connected in a voltage switching  
mode. OUT1 is connected to the reference voltage and AGND  
is connected to DGND. The D/A converter output voltage is  
available at the VREF pin and has a constant output impedance  
equal to R. RFB is not used in this circuit.  
0.5  
1.0  
+15V  
18  
1.5  
2.0  
V
DD  
REFERENCE  
VOLTAGE  
1
2
OUT1  
V
19  
V
REF  
O
AD7545  
AGND  
0
5
10  
DGND  
3
DB11DB0  
V
Volts  
REF  
12  
Figure 9. Differential Nonlinearity vs. Reference Voltage  
for Figure 7 Circuit. VDD = 15 Volts. Shaded Area Shows  
Range of Values of Differential Nonlinearity that Typically  
Occur for L, C and U Grades.  
15 VOLT CMOS DIGITAL INPUTS  
Figure 7. Single Supply Operation Using Voltage  
Switching Mode  
The circuits of Figures 4, 5 and 6 can all be converted to single  
supply operation by biasing AGND to some voltage between  
The loading on the reference voltage source is code dependent  
and the response time of the circuit is often determined by the  
behavior of the reference voltage with changing load conditions.  
VDD and DGND. Figure 10 shows the twos complement bipolar  
circuit of Figure 5 modified to give a range from +2 V to +8 V  
about a pseudo-analog groundof 5 V. This voltage range  
would allow operation from a single VDD of +10 V to +15 V.  
The AD584 pin-programmable reference fixes AGND at +5 V.  
VIN is set at +2 V by means of the series resistors R1 and R2.  
There is no need to buffer the VREF input to the AD7545  
with an amplifier because the input impedance of the D/A con-  
verter is constant. Note, however, that since the temperature  
coefficient of the D/A reference input resistance is typically  
300 ppm/°C; applications that experience wide temperature  
variations may require a buffer amplifier to generate the +2.0 V  
at the AD7545 VREF pin. Other output voltage ranges can be  
obtained by changing R4 to shift the zero point and (R1 + R2)  
to change the slope, or gain, of the D/A transfer function. VDD  
must be kept at least 5 V above OUT1 to ensure that linearity is  
preserved.  
To maintain linearity, the voltages at OUT1 and AGND should  
remain within 2.5 volts of each other, for a VDD of 15 volts. If  
V
DD is reduced from 15 V, or the differential voltage between  
OUT1 and AGND is increased to more than 2.5 V, the differ-  
ential nonlinearity of the DAC will increase and the linearity of  
the DAC will be degraded. Figures 8 and 9 show typical curves  
illustrating this effect for various values of reference voltage and  
VDD. If the output voltage is required to be offset from ground  
by some value, then OUT1 and AGND may be biased up. The  
effect on linearity and differential nonlinearity will be the same  
as reducing VDD by the amount of the offset.  
6–  
REV. A  
AD7545  
V
= +10V TO +15V  
DD  
Figure 12 shows an alternative approach for use with 8-bit  
processors which have a full 16-bit wide address bus such as  
6800, 8080, Z80 This technique uses the 12 lower address lines  
of the processor address bus to supply data to the DAC, thus  
each AD7545 connected in this way uses 4k bytes of address  
locations. Data is written to the DAC using a single memory  
write instruction. The address field of the instruction is orga-  
nized so that the lower 12 bits contain the data for the DAC and  
the upper 4 bits contain the address of the 4k block at which the  
DAC resides.  
R5  
20k  
C1  
18  
20  
R
33pF  
V
R3  
DD  
REF  
FB  
1
2
OUT1  
+2V  
10kΩ  
V
19  
A1  
AD7545  
R1  
V
AGND  
DGND  
A2  
AD544L  
+5V  
O
10KΩ  
MSB  
4
DB10DB0  
AD544J  
3
R6  
5kΩ  
V
DD  
1
2
R4  
33.3kΩ  
R2  
2kΩ  
8
AD584J  
4
A15  
CMOS DATA BUS  
= +10V TO +15V  
16-BIT ADDRESS BUS  
A0  
V
DD  
4
Figure 10. Single Supply BipolarTwos Complement  
D/A Converter  
DB11  
ADDRESS  
12  
DECODE  
DB0  
CPU  
AD7545  
Q
MICROPROCESSOR INTERFACING OF THE AD7545  
0
CS  
The AD7545 can directly interface to both 8- and 16-bit micro-  
processors via its 12-bit wide data latch using standard CS and  
WR control signals.  
WR  
WR  
D7  
D0  
A typical interface circuit for an 8-bit processor is shown in  
Figure 11. This arrangement uses two memory addresses, one  
for the lower eight bits of data to the DAC and one for the up-  
per four bits of data into the DAC via the latch.  
DATA BUS  
Figure 12. Connecting the AD7545 to 8-Bit Processors via  
the Address Bus  
A15  
SUPPLEMENTAL APPLICATION MATERIAL  
For further information on CMOS multiplying D/A converters  
the reader is referred to the following texts:  
ADDRESS BUS  
A0  
Q *  
0
CS  
Application Guide to CMOS Multiplying D/A converters  
available from Analog Devices, Publication Number G479.  
ADDRESS  
DECODE  
Q *  
1
CS  
CPU  
DB11  
DB8  
LATCH  
Gain Error and Gain Temperature Coefficient of CMOS  
Multiplying DACSApplication Note, Publication Number  
E630106/81 available from Analog Devices.  
4
4
AD7545  
WR  
WR  
WR  
DB7  
DB0  
8
D7  
D0  
8-BIT DATA BUS  
8
* Q = DECODED ADDRESS FOR DAC  
0
Q
= DECODED ADDRESS FOR LATCH  
1
Figure 11. 8-Bit Processor to AD7545 Interface  
REV. A  
7–  
AD7545  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
20-Lead Plastic DIP  
(N-20)  
20-Lead Cerdip  
(Q-20)  
20-Terminal Leadless Ceramic Chip Carrier (LCCC)  
(E-20A)  
20-Lead Plastic Leaded Chip Carrier (PLCC)  
(P-20A)  
8–  
REV. A  

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