AD7545KNZ [ROCHESTER]

D/A Converter, 1 Func, Parallel, Word Input Loading, PDIP20, 0.300 INCH, PLASTIC, DIP-20;
AD7545KNZ
型号: AD7545KNZ
厂家: Rochester Electronics    Rochester Electronics
描述:

D/A Converter, 1 Func, Parallel, Word Input Loading, PDIP20, 0.300 INCH, PLASTIC, DIP-20

光电二极管 转换器
文件: 总4页 (文件大小:802K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CMOS 12-Bit  
Buffered Multiplying DAC  
a
AD7545  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
12-Bit Resolution  
R
FB  
20  
Low Gain TC: 2 ppm/؇C typ  
Fast TTL Compatible Data Latches  
Single +5 V to +15 V Supply  
Small 20-Lead 0.3" DIP and 20-Terminal Surface Mount  
Packages  
AD7545  
R
1
2
OUT 1  
AGND  
12-BIT  
MULTIPLYING DAC  
V
19  
REF  
Latch Free (Schottky Protection Diode Not Required)  
Low Cost  
12  
Ideal for Battery Operated Equipment  
WR 17  
16  
18  
3
V
DD  
INPUT DATA LATCHES  
CS  
DGND  
12  
DB11–DB0  
(PINS 4–15)  
GENERAL DESCRIPTION  
The AD7545 is particularly suitable for single supply operation  
and applications with wide temperature variations.  
The AD7545 is a monolithic 12-bit CMOS multiplying DAC  
with onboard data latches. It is loaded by a single 12-bit wide  
word and directly interfaces to most 12- and 16-bit bus systems.  
Data is loaded into the input latches under the control of the CS  
and WR inputs; tying these control inputs low makes the input  
latches transparent, allowing direct unbuffered operation of the  
DAC.  
The AD7545 can be used with any supply voltage from +5 V to  
+15 V. With CMOS logic levels at the inputs the device dissi-  
pates less than 0.5 mW for VDD = +5 V.  
PRELIMINARY  
PIN CONFIGURATIONS  
TECHNICAL  
DATA  
DIP  
LCCC  
PLCC  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
OUT 1  
AGND  
DGND  
DB11 (MSB)  
DB10  
R
FB  
V
REF  
2
3
1
20 19  
2
3
1 20 19  
3
V
DD  
PIN 1  
IDENTIFIER  
DB11 (MSB)  
DB10  
4
5
6
7
8
18  
V
DD  
18  
17  
16  
15  
V
4
DB11 (MSB)  
DD  
4
WR  
17 WR  
DB10 5  
DB9 6  
DB8 7  
DB7 8  
WR  
AD7545  
TOP VIEW  
(Not to Scale)  
AD7545  
TOP VIEW  
(Not to Scale)  
5
CS  
AD7545  
TOP VIEW  
(Not to Scale)  
DB9  
16  
CS  
CS  
DB0 (MSB)  
DB1  
DB9  
6
DB0 (LSB)  
DB8  
15 DB0 (LSB)  
14 DB1  
DB8  
7
14 DB1  
DB7  
DB2  
8
DB7  
9
10 11 12 13  
9
10 11 12 13  
9
DB6  
DB3  
DB4  
DB5  
10  
REV. A  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 617/329-4700  
Fax: 617/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 1997  
(VREF = +10 V, VOUT1 = O V, AGND = DGND unless otherwise noted)  
AD7545–SPECIFICATIONS  
VDD = +5 V  
Limits  
TA = + 25؇C TMIN, TMAX  
VDD = +15 V  
Limits  
TA = + 25؇C TMIN, TMAX  
1
1
Parameter  
Version  
Units  
Test Conditions/Comments  
STATIC PERFORMANCE  
Resolution  
All  
12  
12  
12  
12  
Bits  
J, A, S  
K, B, T  
L, C, U  
GL, GC, GU ±1/2  
J, A, S  
K, B, T  
L, C, U  
GL, GC, GU ±1  
J, A, S  
K, B, T  
L, C, U  
±2  
±1  
±1/2  
±2  
±1  
±1/2  
±1/2  
±4  
±1  
±1  
±1  
±2  
±1  
±1/2  
±1/2  
±4  
±1  
±1  
±1  
±25  
±15  
±10  
±6  
±2  
±1  
±1/2  
±1/2  
±4  
±1  
±1  
±1  
±25  
±15  
±10  
±7  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
LSB max  
Differential Nonlinearity  
±4  
±1  
±1  
10-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
12-Bit Monotonic TMIN to TMAX  
DAC Register Loaded with  
1111 1111 1111  
Gain Error (Using Internal RFB)2  
±20  
±10  
±5  
±20  
±10  
±6  
Gain Error Is Adjustable Using  
the Circuits of Figures 4, 5, and 6  
GL, GC, GU ±1  
±2  
Gain Temperature Coefficient3  
Gain/Temperature  
All  
±5  
±5  
±10  
±10  
ppm/°C max  
Typical Value is 2 ppm/°C for VDD = +5 V  
DC Supply Rejection3  
Gain/VDD  
All  
0.015  
10  
10  
0.03  
50  
50  
0.01  
10  
10  
0.02  
50  
50  
% per % max VDD = ±5%  
Output Leakage Current at OUT1  
J, K, L, GL  
A, B, C, GC  
S, T, U, GU  
nA max  
nA max  
nA max  
DB0–DB11 = 0 V; WR, CS = 0 V  
10  
200  
10  
200  
DYNAMIC PERFORMANCE  
Current Settling Time3  
All  
2
2
2
2
µs max  
To 1/2 LSB. OUT1 Load = 100 . DAC  
Output Measured from Falling Edge of  
WR, CS = 0.  
Propagation Delay3 (from Digital  
Input Change to 90%  
of Final Analog Output)  
Digital-to-Analog Glitch Inpulse  
AC Feedthrough5  
All  
All  
300  
400  
250  
250  
ns max  
nV sec typ  
OUT1 Load = 100 , CEXT = 13 pF4  
VREF = AGND  
At OUT1  
All  
All  
5
5
5
5
mV p-p typ  
VREF = ±10 V, 10 kHz Sinewave  
REFERENCE INPUT  
Input Resistance  
7
25  
7
25  
7
25  
7
25  
kmin  
kmax  
Input Resistance TC = –300 ppm/°C typ  
Typical Input Resistance = 11 kΩ  
(Pin 19 to GND)  
ANALOG OUTPUT  
Output Capacitance3  
COUT1  
PRELIMINARY  
All  
70  
200  
70  
200  
70  
200  
70  
200  
pF max  
pF max  
DB0–DB11 = 0 V, WR, CS = 0 V  
DB0–DB11 = VDD, WR, CS = 0 V  
COUT1  
TECHNICAL  
DIGITAL INPUTS  
Input High Voltage  
VIH  
DATA  
All  
All  
All  
2.4  
0.8  
±1  
2.4  
0.8  
±10  
13.5  
1.5  
±1  
13.5  
V min  
V max  
µA max  
Input Low Voltage  
VIL  
1.5  
Input Current6  
IIN  
±10  
VIN = 0 or VDD  
Input Capacitance3  
DB0–DB11  
WR, CS  
All  
All  
5
20  
5
20  
5
20  
5
20  
pF max  
pF max  
VIN = 0  
VIN = 0  
SWITCHING CHARACTERISTICS7  
Chip Select to Write Setup Time  
tCS  
All  
280  
200  
380  
270  
180  
120  
200  
150  
ns min  
ns typ  
See Timing Diagram  
Chip Select to Write Hold Time  
tCH  
All  
All  
All  
0
0
0
0
ns min  
Write Pulse Width  
tWR  
250  
175  
140  
100  
400  
280  
210  
150  
160  
100  
90  
240  
170  
120  
80  
ns min  
ns typ  
ns min  
ns typ  
tCS tWR, tCH 0  
Data Setup Time  
tDS  
60  
Data Hold Time  
tDH  
All  
All  
10  
10  
10  
10  
ns min  
POWER SUPPLY  
IDD  
2
100  
10  
2
500  
10  
2
100  
10  
2
500  
10  
mA max  
µA max  
µA typ  
All Digital Inputs VIL or VIH  
All Digital Inputs 0 V to VDD  
All Digital Inputs 0 V to VDD  
NOTES  
1Temperature range as follows: J, K, L, GL versions, 0°C to +70°C; A, B, C, GC versions, –25°C to +85°C; S, T, U GU versions, –55°C to +125°C.  
2This includes the effect of 5 ppm max gain TC.  
3Guaranteed but not tested.  
4DB0–DB11 = 0 V to VDD or VDD to 0 V.  
5Feedthrough can be further reduced by connecting the metal lid on the ceramic package (Suffix D) to DGND.  
6Logic inputs are MOS gates. Typical input current (+25°C) is less than 1 nA.  
7Sample tested at +25°C to ensure compliance.  
Specifications subject to change without notice.  
–2–  
REV. A  
AD7545  
tCH  
MODE SELECTION  
HOLD MODE:  
tCS  
V
DD  
WRITE MODE:  
CHIP  
SELECT  
0
CS AND WR LOW, DAC RESPONDS  
TO DATA BUS (DB0–DB11) INPUTS.  
EITHER CS OR WR HIGH, DATA BUS  
(DB0–DB11) IS LOCKED OUT; DAC  
HOLDS LAST DATA PRESENT WHEN  
tWR  
V
WR OR CS ASSUMED HIGH STATE.  
DD  
WRITE  
NOTES:  
0
V
= +5V; t = t = 20ns  
DD  
r f  
tDS  
DATA VALID  
tDH  
V
= +15V; t = t = 40ns  
r f  
DD  
ALL INPUT SIGNAL RISE AND FALL TIMES MEASURED FROM 10% TO  
90% OF V  
V
DD  
V
IH  
.
DATA IN  
(DB0–DB11)  
DD  
V
IL  
TIMING MEASUREMENT REFERENCE LEVEL IS V + V /2.  
IH IL  
0
Write Cycle Timing Diagram  
ABSOLUTE MAXIMUM RATINGS*  
(TA = + 25°C unless otherwise noted)  
Commercial (J, K, L, GL) Grades . . . . . . . . 0°C to +70°C  
Industrial (A, B, C, GC) Grades . . . . . . . . –25°C to +85°C  
Extended (S, T, U, GU) Grades . . . . . . . –55°C to +125°C  
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C  
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . +300°C  
VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3, +17 V  
Digital Input Voltage to DGND . . . . . . . –0.3 V, VDD +0.3 V  
VRFB, VREF to DGND . . . . . . . . . . . . . . . . . . . . . . . . . ±25 V  
*Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
V
PIN1 to DGND . . . . . . . . . . . . . . . . . . . . –0.3 V, VDD +0.3 V  
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V, VDD + 0.3 V  
Power Dissipation (Any Package) to +75°C . . . . . . . 450 mW  
Derates above +75°C . . . . . . . . . . . . . . . . . . . . . . 6 mW/°C  
Operating Temperature  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD7545 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
PRELIMINARY  
ORDERING GUIDE1  
TERMINOLOGY  
RELATIVE ACCURACY  
TECHNICAL  
Maximum  
Gain Error  
The amount by which the D/A converter transfer function DATA  
differs from the ideal transfer function after the zero and full-  
scale points have been adjusted. This is an endpoint linearity  
Temperature  
Range  
Relative  
Accuracy  
TA = +25؇C Package  
Model2  
VDD = +5 V Options3  
measurement.  
AD7545JN  
AD7545AQ  
AD7545SQ  
AD7545KN  
AD7545BQ  
AD7545TQ  
AD7545LN  
AD7545CQ  
AD7545UQ  
0°C to +70°C  
–25°C to +85°C  
–55°C to +125°C ±2 LSB  
0°C to +70°C  
–25°C to +85°C  
–55°C to +125°C ±1 LSB  
0°C to +70°C  
–25°C to +85°C  
±2 LSB  
±2 LSB  
±20 LSB  
±20 LSB  
±20 LSB  
±10 LSB  
±10 LSB  
±10 LSB  
±5 LSB  
±5 LSB  
±5 LSB  
±1 LSB  
±1 LSB  
±1 LSB  
±20 LSB  
±20 LSB  
±10 LSB  
±10 LSB  
±5 LSB  
±5 LSB  
±1 LSB  
±1 LSB  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
N-20  
Q-20  
Q-20  
P-20A  
E-20A  
P-20A  
E-20A  
P-20A  
E-20A  
P-20A  
E-20A  
DIFFERENTIAL NONLINEARITY  
±1 LSB  
±1 LSB  
The difference between the measured change and the ideal  
change between any two adjacent codes. If a device has a differ-  
ential nonlinearity of less than 1 LSB it will be monotonic, i.e.,  
the output will always increase for an increase in digital code  
applied to the D/A converter.  
±1/2 LSB  
±1/2 LSB  
–55°C to +125°C ±1/2 LSB  
AD7545GLN 0°C to +70°C  
AD7545GCQ –25°C to +85°C  
±1/2 LSB  
±1/2 LSB  
PROPAGATION DELAY  
AD7545GUQ –55°C to +125°C ±1/2 LSB  
This is a measure of the internal delay of the circuit and is mea-  
sured from the time a digital input changes to the point at which  
AD7545JP  
AD7545SE  
AD7545KP  
AD7545TE  
AD7545LP  
AD7545UE  
AD7545GLP  
0°C to +70°C  
–55°C to +125°C ±2 LSB  
0°C to +70°C ±1 LSB  
–55°C to +125°C ±1 LSB  
0°C to +70°C ±1/2 LSB  
–55°C to +125°C ±1/2 LSB  
0°C to +70°C ±1/2 LSB  
±2 LSB  
the analog output at OUT1 reaches 90% of its final value.  
DIGITAL-TO-ANALOG GLITCH IMPULSE  
This is a measure of the amount of charge injected from the  
digital inputs to the analog outputs when the inputs change  
state. It is usually specified as the area of the glitch in nV secs  
and is measured with VREF = AGND and an ADLH0032CG as  
the output op amp, C1 (phase compensation) = 33 pF.  
AD7545GUE –55°C to +125°C ±1/2 LSB  
NOTES  
1Analog Devices reserves the right to ship either ceramic (D-20) in lieu of cerdip  
packages (Q-20).  
2To order MIL-STD-883, Class B process parts, add /883B to part number.  
Contact local sales office for military data sheet. For U.S. Standard Military  
DRAWING (SMD) see DESC drawing 5962-87702.  
3E = Leadless Ceramic Chip Carrier; N = Plastic DIP; P = Plastic Leaded Chip  
Carrier; Q = Cerdip.  
REV. A  
–3–  

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