ACE14409T [ACE]
P-Channel Enhancement Mode Field Effect Transistor;
| 型号： | ACE14409T |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：792K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
Description
The ACE14409T uses advanced trench technology to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Features
VDS(V)=-30V
ID=-12A
RDS(ON)＜12mΩ (VGS=-10V)
RDS(ON)＜18mΩ (VGS=-4.5V)
Absolute Maximum Ratings
Parameter
Symbol
VDS
Max
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
TA=25OC
TA=100OC
-12
Drain Current (Continuous) * AC
Drain Current (Pulse) * B
Power Dissipation
ID
IDM
-7.5
A
-48
TA=25OC
TA=100OC
3
PD
W
1.8
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
OC
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Packaging Type
SOP-8
VER 1.2
1
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE14409T XX + H
Halogen - free
Pb - free
FM: SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
-30
-1
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V(BR)DSS
IDSS
VGS(th)
IGSS
VGS=0V, ID=-250uA
VDS=-30V, VGS=0V
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, ID=-10A
VGS=-4.5V, ID=-7A
VGS=-10V, ID=-10A
ISD=-2A, VGS=0V
V
-1
-3
uA
V
-1.5
Gate Leakage Current
±100
15
nA
12
18
Static Drain-Source On-Resistance
RDS(ON)
mΩ
25
Forward Transconductance
Diode Forward Voltage
gFS
20
S
V
VSD
-1.2
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
24
3.5
6
VGS=-10V,VDS=-15V,
ID=-10A,
nC
ns
9
8
VGS=-10V,VDS=-15V,
ID=-10A ,RGEN=1Ω
td(off)
tf
28
10
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
1750
215
VGS=0V,VDS=-15V,
f=1MHz
pF
Reverse Transfer Capacitance
180
VER 1.2
2
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
VER 1.2
4
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
VER 1.2
5
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Unit: mm
VER 1.2
6
ACE14409T
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
7
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