ACE14419T [ACE]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | ACE14419T |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：697K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE14419T
P-Channel Enhancement Mode Power MOSFET
Description
The ACE14419T uses advanced trench technology to provide excellent RDS, low gate charge and
operation with gate voltages as low as 4.5V.
RoHS Compliant
Halogen Free
Features
VDS (V) = -30V,ID = -9.1A
R
DS(ON)<20mΩ @ VGS= -10V
DS(ON)<30mΩ @ VGS= -4.5V
R
SOP-8 Package
Absolute Maximum Ratings
Parameter
Symbol
VDS
Max
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
TA=25 OC
TA=70 OC
-9.1
Drain Current (Continuous)
ID
-7.5
A
Drain Current (Pulse)
Power Dissipation
IDM
PD
-50
TA=25 OC
3.1
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
OC
Thermal Data
Parameter
Symbol
Rthj-c
Value
24
Unit
OC/W
OC/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rthj-a
48
Packaging Type
SOP-8
VER 1.1
1
ACE14419T
P-Channel Enhancement Mode Power MOSFET
Ordering information
ACE14419T XX + H
Halogen - free
Pb - free
FM: SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Static
Min.
-30
-1
Typ.
Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V(BR)DSS
IDSS
VGS(th)
IGSS
VGS=0V, ID=-250uA
VDS=-30V, VGS=0V
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, ID=-9.1A
VGS=-4.5V, ID=-6.9A
VGS=-15V, ID=-9A
ISD=-2.5A, VGS=0V
IS = -7A,VGS= 0V,
dl/dt=100A/μs
V
-1
-3
uA
V
-1.5
Gate Leakage Current
±100
20
nA
Static Drain-Source On-Resistance
RDS(ON)
mΩ
30
Forward Trans Conductance
Diode Forward Voltage
gFS
VSD
trr
10
S
V
-1.2
Reverse Recovery Time
Reverse Recovery Charge
26
17
ns
nC
Qrr
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
Td(on)
tf
17
5.3
7.9
8.5
7.5
42
VGS=-10V,VDS=-15V,
ID=-7A,
nC
ns
VGS=-10V,VDD=-15V,
ID=-1A ,RGEN=3.3Ω
td(off)
tf
28
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
1530
313
VGS=0V,VDS=-15V,
f=1MHz
pF
Reverse Transfer Capacitance
281
Pulse Test: Pulse Width ≤μ300s, Duty Cycle≤ 2.0%
VER 1.1
2
ACE14419T
P-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics
VER 1.1
3
ACE14419T
P-Channel Enhancement Mode Power MOSFET
VER 1.1
4
ACE14419T
P-Channel Enhancement Mode Power MOSFET
VER 1.1
5
ACE14419T
P-Channel Enhancement Mode Power MOSFET
Packing Information
SOP-8
Unit: mm
VER 1.1
6
ACE14419T
P-Channel Enhancement Mode Power MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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