5SDA10D2003 [ABB]
Avalanche Rectifier Diode; 雪崩整流二极管
| 型号： | 5SDA10D2003 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Avalanche Rectifier Diode |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Key Parameters
Avalanche Rectifier Diode
VRRM
IFAVM
IFSM
VF0
=
=
=
=
=
2300 V
1140 A
13.5 kA
0.83 V
5SDA 10D2303
rF
0.30
mW
Doc. No. 5SYA 1120 - 01 Apr-98
Features
· Optimized for line frequency rectifiers
· Low on-state voltage, narrow VF-bands for parallel operation
· Self protected against transient overvoltages
· Guaranteed maximum avalanche power dissipation
· Industry standard housing
Blocking
Part number 5SDA 10D2303 5SDA 10D2003
5SDA 10D1703 Condition
VRRM
VRSM
IRRM
2300
2530
2000
1700
1870
f
= 50 Hz
tP = 10 ms
Tj = 160°C
Tj = 160°C
2200
tP = 10 ms
VRRM
50 mA
70 kW
50 kW
£
£
£
PRSM
tP = 20 µs
tP = 20 µs
Tj
=
45°C
Tj = 160°C
Mechanical data
FM
Mounting force
min.
10 kN
12 kN
max.
a
Acceleration
Device unclamped
Device clamped
Weight
50 m/s2
200 m/s2
0.25 kg
m
DS
Da
Surface creepage distance
Air strike distance
30 mm
20.5 mm
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 10D2303
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
1140 A
1790 A
13.5 kA
14.5 kA
Half sine wave, TC = 85°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
Tj =
160°C
After surge:
I2t
Limiting load integral
A2s
A2s
910×103
875×103
VR » 0V
VF0
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
0.83 V
= 1000 - 3000 A
Tj =
Tj =
160°C
rF
0.30
mW
VF min
VF max
1.20 V
1.35 V
IF
=
1800 A
25°C
Thermal
Tj
Storage and operating
-40...160°C
junction temperature range
Thermal resistance
junction to case
RthJC
80 K/kW Anode side cooled
80 K/kW Cathode side cooled
40 K/kW Double side cooled
16 K/kW Single side cooled
8 K/kW Double side cooled
RthCH
Thermal resistance case to
heat sink
45
Analytical function for transient thermal impedance:
Fm =10...12 kN
40
35
30
25
20
15
10
5
Double Side Cooling
Zth
4
[K/kW]
Z
thJC(t) = R
i
(1-e-t/t i )
å
i=1
i
1
2
3
4
R (K/kW)
t i (s)
20.95
0.396
10.57
0.072
7.15
1.33
0
2
3
4
2
3
4
2
3
4
2
3
4
10-3
5 6 7 10-2
5 6 7 10-1
5 5 6 100
5 6 7 101
0.009
0.0044
t [s]
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
IFAVM (A)
T max (°C)
Rthja (K/kW)
P (W)
VF0 (V)
Ta (°C)
rF (W)
-VF0
+
(VF0)2 + 4*f2 *r
*P
f
I
FAVM
=
Tc (°C)
RthJC (K/kW)
2*f2 *r
f
f2 =
1
for DC current
T
J max - T
C
T
J max - T
A
where P =
or P =
2.5
3.1
6
for half-sine wave
for 120°el., sine
for 60° el., sine
Rthjc
Rthja
Doc. No. 5SYA 1120 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
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