5SDA14F3807 [ABB]
Avalanche Rectifier Diode; 雪崩整流二极管
| 型号： | 5SDA14F3807 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Avalanche Rectifier Diode |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Key Parameters
Avalanche Rectifier Diode
VRRM
IFAVM
IFSM
VF0
=
=
=
=
=
5000 V
1410 A
17.5 kA
1.13 V
5SDA 14F5007
rF
0.44
mW
Doc. No. 5SYA 1126 - 01 Apr-98
Features
· Optimized for line frequency rectifiers
· Low on-state voltage, narrow VF-bands for parallel operation
· Self protected against transient overvoltages
· Guaranteed maximum avalanche power dissipation
· Industry standard housing
Blocking
Part number
5SDA 14F5007
5000
5SDA 14F4407
4400
5SDA 14F3807 Condition
VRRM
3800
4180
f
= 50 Hz
tP = 10 ms
Tj = 160°C
Tj = 160°C
VRSM
5500
5280
tP = 10 ms
VRRM
IRRM
50 mA
70 kW
50 kW
£
£
£
PRSM
tP = 20 µs
tP = 20 µs
Tj
=
45°C
Tj = 160°C
Mechanical data
FM
Mounting force
min.
20 kN
24 kN
max.
a
Acceleration
Device unclamped
Device clamped
Weight
50 m/s2
200 m/s2
0.5 kg
m
DS
Da
Surface creepage distance
Air strike distance
30 mm
20 mm
ABB Semiconductors AG
ABB Semiconductors AG
5SDA 14F5007
On-state
IFAVM
IFRMS
IFSM
Max. average on-state current
1410 A
2210 A
17.5 kA
19.0 kA
Half sine wave, TC = 85°C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tp
tp
tp
tp
IF
=
=
=
=
10 ms
8.3 ms
10 ms
8.3 ms
Tj =
160°C
After surge:
I2t
Limiting load integral
A2s
A2s
1530×103
1500×103
VR » 0V
VF0
Threshold voltage
Slope resistance
On-state voltage
On-state voltage
1.13 V
= 1000 - 3000 A
Tj =
Tj =
160°C
rF
0.44
mW
VF min
VF max
2.00 V
2.40 V
IF
=
4000 A
25°C
Thermal
Tj
Storage and operating
-40...160°C
junction temperature range
Thermal resistance
junction to case
RthJC
40 K/kW Anode side cooled
40 K/kW Cathode side cooled
20 K/kW Double side cooled
10 K/kW Single side cooled
5 K/kW Double side cooled
RthCH
Thermal resistance case to
heat sink
24
Analytical function for transient thermal impedance:
Fm = 20...24 kN
Zth
20
16
12
8
Double Side Cooling
4
[K/kW]
Z
thJC(t) = R
i
(1-e-t/t i )
å
i=1
i
1
2
3
4
4
R (K/kW)
t I (s)
11.83
0.432
4.26
0.071
1.63
0.01
2.28
0
2
3
4
5
2
3
4
2
3
4
2
3 4
10-3
6 7 10-2
5 6 710-1
t [s]
5 5 6 100
5 6 7 101
0.0054
For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows:
(VF0)2 + 4*f2 *r
*P
f
IFAVM (A)
P (W)
VF0 (V)
Ta (°C)
rF (W)
-VF0
+
I
FAVM
=
T max (°C)
Rthja (K/kW)
Tc (°C)
RthJC (K/kW)
2*f2 *r
f
f2 =
1
for DC current
T
J max - T
C
T
J max - T
A
2.5
3.1
6
for half-sine wave
for 120°el., sine
for 60° el., sine
where P =
or P =
Rthjc
Rthja
Doc. No. 5SYA 1126 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
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