AP5321GM-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP5321GM-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP5321GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
100V
150mΩ
2.5A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
D2
D2
D1
Description
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
S2
G1
SO-8
S1
D2
S2
D1
G2
G1
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
100
Gate-Source Voltage
+20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
2.5
A
2
10
A
A
PD@TA=25℃
TSTG
Total Power Dissipation
2
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201003171
AP5321GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=2A
VGS=0V, ID=250uA
100
-
-
-
-
150
3
V
mΩ
V
-
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
gfs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VDS=10V, ID=2A
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
ID=2A
-
-
-
-
-
-
-
-
-
-
-
-
-
2.8
-
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
+100
Qg
10
2
16
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=80V
-
VGS=10V
4
-
VDS=50V
6.5
7
-
ID=2A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
14
3.5
420
60
40
-
VGS=10V
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
672
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1.5A, VGS=0V
IS=2A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
V
40
75
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP5321GM-HF
20
16
12
8
12
10
8
T A = 150 o
C
T A = 25 o
C
10V
8.0V
7.0V
6.0V
10V
8.0V
7.0V
6.0V
V G = 5.0V
6
4
V G = 5.0V
4
2
0
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
260
220
180
140
100
2.4
2.0
1.6
1.2
0.8
0.4
I D = 2 A
I D = 2 A
V
G =10V
T
A =25 ℃
Ω
4
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
0.4
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP5321GM-HF
f=1.0MHz
10
600
500
400
300
200
100
0
8
I
D = 2 A
C iss
V DS = 80V
6
4
2
0
C oss
C rss
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
Duty factor=0.5
0.2
0.1
Operation in this
100us
area limited by
0.1
RDS(ON)
1
1ms
0.05
0.02
PDM
10ms
100ms
t
0.01
0.1
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
1s
Rthja = 135℃/W
0.01
0.001
DC
T A =25 o C
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
t
td(on) tr
d(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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