AP5521GH-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP5521GH-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP5521GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
100V
150mΩ
3.1A
D1/D2
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
RDS(ON)
ID
P-CH BVDSS
RDS(ON)
S1
-100V
155mΩ
-3.2A
G1
S2
G2
Description
ID
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
-100
+20
VDS
VGS
Drain-Source Voltage
100
+20
3.1
2.5
12
V
V
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-3.2
A
-2.5
A
-12
A
PD@TA=25℃
TSTG
Total Power Dissipation
3.13
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
6
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Rthj-a
40
Data and specifications subject to change without notice
1
201004222
AP5521GH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=2A
GS=5V, ID=1A
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
100
-
-
V
-
-
-
150 mΩ
250 mΩ
Static Drain-Source On-Resistance2
RDS(ON)
V
-
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=2A
1
-
3
-
V
S
gfs
Forward Transconductance
Drain-Source Leakage Current
2.8
-
IDSS
uA
VDS=80V, VGS=0V
-
10
IGSS
nA
nC
nC
nC
ns
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=2A
-
-
-
-
-
-
-
-
-
-
-
-
10
2
+100
Qg
16
-
Qgs
Qgd
td(on)
tr
VDS=80V
VGS=10V
VDS=50V
ID=2A
4
-
6.5
7
-
ns
-
ns
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
VGS=0V
14
3.5
-
ns
-
pF
pF
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
420 672
VDS=25V
f=1.0MHz
60
40
-
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=2.4A, VGS=0V
IS=2A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
V
40
75
-
-
ns
nC
Qrr
Reverse Recovery Charge
2
AP5521GH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-100
-
-
-
V
V
V
GS=-10V, ID=-2A
GS=-5V, ID=-1A
-
-
155 mΩ
250 mΩ
Static Drain-Source On-Resistance2
RDS(ON)
-
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=-250uA
VDS=-10V, ID=-2A
VDS=-80V, VGS=0V
VGS=+20V, VDS=0V
ID=-2A
-1
-
-
-3
V
8.5
-
-
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-10
-
-
+100
Qg
-
29
3
46
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=-80V
-
VGS=-10V
-
9
-
VDS=-50V
-
9
-
ID=-2A
-
6
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
49
22
-
VGS=-10V
-
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
-
1400 2240
Output Capacitance
Reverse Transfer Capacitance
VDS=-25V
-
110
70
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-2.4A, VGS=0V
IS=-2A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.3
V
39
73
-
-
ns
nC
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP5521GH-HF
N-Channel
20
12
10
8
T A = 150 o
C
T A = 25 o
C
10V
8.0V
7.0V
10V
8.0V
16
12
8
7.0V
6.0V
V
G = 5.0V
6.0V
6
4
V G = 5.0V
4
2
0
0
0
2
4
6
8
10
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
220
200
180
160
140
120
100
2.4
I D = 1 A
I D = 2 A
T
A =25 o C
V
G =10V
2.0
1.6
1.2
0.8
0.4
Ω
-50
0
50
100
150
4
5
6
7
8
9
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
4
2
0
1.6
1.2
0.8
0.4
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP5521GH-HF
N-Channel
f=1.0MHz
12
600
500
400
300
200
100
0
I D =2A
DS =80V
V
10
8
C iss
6
4
2
C oss
C rss
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
Operation in this area
0.1
limited by R
DS(ON)
100us
0.05
0.02
1
1ms
10ms
100ms
0.01
PDM
t
Single Pulse
0.01
T
0.1
Duty factor = t/T
1s
T A =25 o C
Peak Tj = PDM x Rthja + TA
Rthja=75℃/W
Single Pulse
DC
0.01
0.001
0.0001
0.01
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
10V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
AP5521GH-HF
P-Channel
20
12
10
8
-10V
-8.0V
-7.0V
T A = 150 o
C
-10V
-8.0V
T A = 25 o
C
-7.0V
-6.0V
V G = -5.0V
16
12
8
-6.0V
V G = -5.0V
6
4
4
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
150
140
130
120
110
2.4
2.0
1.6
1.2
0.8
0.4
I D = -2A
I D = -1 A
T
A =25 o C
V
G = -10V
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
0.4
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP5521GH-HF
P-Channel
f=1.0MHz
12
2000
1600
1200
800
400
0
10
8
I D = -2 A
DS = -80 V
V
C iss
6
4
2
C oss
C rss
0
0
1
5
9
13
17
21
25
29
10
20
30
40
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
0.1
10
Operation in this area
0.1
limited by R
DS(ON)
100us
0.05
1ms
10ms
1
0.02
0.01
PDM
0.01
100ms
t
Single Pulse
T
0.1
Duty factor = t/T
1s
Peak Tj = PDM x Rthja + TA
T A =25 o C
Rthja=75℃/W
DC
Single Pulse
0.01
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-10V
QGS
QGD
10%
VGS
tr
td(on)
td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7
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