AP40P03GH [A-POWER]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
| 型号： | AP40P03GH |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP40P03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-30V
28mΩ
-30A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
G
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40P03GJ) is available for low-profile applications.
TO-252(H)
TO-251(J)
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
-30
A
-18
A
-120
31.3
0.25
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
4
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
201109063-1/4
AP40P03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-30
-
-0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
-
-
V/℃
mΩ
RDS(ON)
28
-
-1
-
-
-
50
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-18A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ±20V
-3
Forward Transconductance
Drain-Source Leakage Current (T=25oC)
20
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-1
j
Drain-Source Leakage Current (T=150oC)
-
-
-25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
ID=-18A
-
14
3
22
-
Qgs
Qgd
td(on)
tr
VDS=-24V
-
VGS=-4.5V
-
9
-
VDS=-15V
-
12
56
30
57
-
ID=-18A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=0.8Ω
-
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
915 1465
VDS=-25V
-
280
195
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-18A, VGS=0V
IS=-18A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
ns
nC
30
21
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP40P03GH/J
100
80
60
40
20
0
120
100
80
60
40
20
0
-10V
-10V
T A = 1 5 0 o
C
T A = 25 o
C
-7.0V
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G = -3.0 V
V
G = -3.0 V
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
50
I D =-1 8 A
I D = -10 A
V
G =-10V
T
C =25 ℃
40
30
20
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2.0
1.5
1.0
0.5
0.0
18
15
12
9
T j =150 o
C
T j =25 o
C
6
3
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40P03GH/J
f=1.0MHz
12
10000
V DS =- 24 V
10
I
D =-1 8 A
8
6
4
2
0
1000
C iss
C oss
C rss
100
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000.0
100.0
10.0
1.0
Duty factor=0.5
100us
1ms
0.2
0.1
0.1
0.05
10ms
100ms
PDM
t
0.02
T
T c =25 o C
0.01
1s
Duty factor = t/T
Single Pulse
Single Pulse
DC
Peak Tj = PDM x Rthjc + TC
0.1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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