AP40P03GI-HF [A-POWER]
Lower On-resistance, Simple Drive Requirement; 低导通电阻，简单的驱动要求
| 型号： | AP40P03GI-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Lower On-resistance, Simple Drive Requirement |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP40P03GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-30V
28mΩ
-30A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
-30
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
-18
A
-120
31.3
0.25
A
PD@TC=25℃
Total Power Dissipation
W
Linear Derating Factor
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4
Rthj-a
65
Data and specifications subject to change without notice
1
201110063
AP40P03GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
-30
-
-0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
-
-
V/℃
mΩ
RDS(ON)
28
-
-1
-
-
50
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-18A
VDS=-30V, VGS=0V
-
-3
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V
21
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-1
-
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=-18A
-
-
+100
-
15
3
24
-
Qgs
Qgd
td(on)
tr
VDS=-25V
VGS=-4.5V
VDS=-15V
ID=-18A
-
-
10
10
48
31
66
-
-
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=-10V
VGS=0V
-
-
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
910 1460
VDS=-25V
f=1.0MHz
f=1.0MHz
-
300
210
11
-
-
-
-
17
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-18A, VGS=0V
IS=-18A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
-1.3
V
ns
nC
30
25
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40P03GI-HF
100
80
60
40
20
0
120
100
80
60
40
20
0
-10V
T A = 1 5 0 o C
-10V
T A = 25 o C
-7.0V
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G = -3.0 V
V
G = -3.0 V
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
58
I D =- 18 A
I D = -10 A
V
G =-10V
T
C =25 ℃
48
38
28
18
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
0.4
18
15
12
9
T j =150 o
C
T j =25 o C
6
3
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40P03GI-HF
f=1.0MHz
10
10000
V DS = - 25 V
I D = - 18 A
8
6
4
2
0
1000
C iss
C oss
C rss
100
1
5
9
13
17
21
25
29
0
5
10
15
20
25
30
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor=0.5
0.2
0.1
100us
0.1
0.05
PDM
t
1ms
0.02
T
10ms
100ms
1s
DC
0.01
Duty factor = t/T
T c =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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