AP1333GU_11 [A-POWER]
Simple Gate Drive, Small Package Outline; 简单的栅极驱动器，封装尺寸小
| 型号： | AP1333GU_11 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Gate Drive, Small Package Outline |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP1333GU
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Gate Drive
BVDSS
RDS(ON)
ID
-20V
D
▼ Small Package Outline
800mΩ
-550mA
▼ Fast Switching Characteristic
S
SOT-323
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching, low on-
resistance and cost-effectiveness.
D
S
G
Absolute Maximum Ratings
Symbol
Parameter
Rating
-20
Unit
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+12
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-550
mA
mA
A
-440
-2.5
PD@TA=25℃
Total Power Dissipation
0.35
W
Linear Derating Factor
0.003
-55 to 150
-55 to 150
W/℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Parameter
Value
360
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201105094
AP1333GU
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=-250uA
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
-20
-
-0.01
-
-
V
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-
-
V/℃
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-550mA
600
800
VGS=-4.5V, ID=-500mA
VGS=-2.5V, ID=-300mA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-500mA
VDS=-20V, VGS=0V
-
-
-
-
1000 mΩ
VGS(th)
gfs
Gate Threshold Voltage
-0.5
-
-1.2
V
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=70oC) V =-16V ,V =0V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-1
-
-10
j
DS
GS
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+12V, VDS=0V
ID=-500mA
VDS=-16V
-
+100
1.7
0.3
0.4
5
2.7
Qgs
Qgd
td(on)
tr
-
-
-
-
-
-
VGS=-4.5V
VDS=-10V
ID=-500mA
RG=3.3Ω,VGS=-5V
RD=20Ω
8
td(off)
tf
Turn-off Delay Time
Fall Time
10
2
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
66 105.6
VDS=-10V
25
20
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=-300mA, VGS=0V
Min. Typ. Max. Unit
-1.2
VSD
-
-
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on FR4 board, t ≦ 10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1333GU
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-5.0V
-4.5V
A = 150 o
C
- 5.0V
- 4.5V
- 3.5V
T
T A =25 o C
-3.5V
- 2.5V
-2.5V
V
G = - 2.0V
V
G = - 2.0V
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1200
1000
800
I D = - 0. 5 A
I D = - 0. 3 A
A =25 o C
V
G = - 4.5V
T
1.4
1.2
1.0
0.8
0.6
Ω
600
400
200
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1333GU
f=1.0MHz
C iss
10
100
8
I D = -0.5A
DS = -16V
V
6
C oss
C rss
4
2
0
10
0
1
2
3
4
1
3
5
7
9
11
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Duty factor=0.5
Operation in this
0.2
area limited by
100us
1
RDS(ON)
0.1
0.1
0.05
PDM
1ms
0.02
t
0.1
T
0.01
Duty factor = t/T
10ms
Peak Tj = PDM x Rthja + Ta
T A =25 o C
Single Pulse
100ms
1s
DC
Single Pulse
0.01
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on)
td(off)tf
tr
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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