AP134-501 [ALPHA]
Tri-Band HBT Power Amplifier Module; 三频HBT功率放大器模块
| 型号： | AP134-501 |
| 厂家： | 
ALPHA INDUSTRIES |
| 描述： | Tri-Band HBT Power Amplifier Module |
| 文件： | 总5页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
Tri-Band HBT Power Amplifier Module
AP134-501
Features
-501
ꢀ 3.2 V Nominal Operating Voltage
TOP VIEW
BOTTOM VIEW
0.075 (1.91 mm) BSC
0.075
(1.91 mm)
BSC
0.394 (10.0 mm)
0.004 (0.1 mm)
ꢀ 50 Ω Internally Matched Input and Output
0.069 (1.75 mm)
0.002 (0.051 mm)
16
1
ꢀ High Power Added Efficiency: 55% for
0.315 (8.0 mm)
0.004 (0.1 mm)
GSM and 50% for DCS and PCS
ꢀ Small Size: 10 x 8 x 1.6 mm MCM Land
PIN 1
INDICATOR
0.082 (2.09 mm)
0.002 (0.051 mm)
0.069 (1.75 mm)
0.002 (0.051 mm)
Grid Array Package
ꢀ Low Current Standby Mode: < 10 µA
0.046 (1.18 mm)
0.002 (0.051 mm)
ꢀ Integral Band Select and Analog Power
SIDE VIEW
MOLD CAP
0.04 (1.05 mm)
0.002 (0.05 mm)
Control
0.06 (1.56 mm)
0.004 (0.10 mm)
ꢀ GPRS Class 12 Capable
Description
The AP134-501 is a high performance IC power amplifier
module designed for use as the final amplification stage
in tri-band GSM and GPRS mobile phone applications
(880–915, 1710–1785 and 1850–1910 MHz). It features
3-cell battery operation, a band select switch, a single
positive analog power control input for both bands, and
exceptional power added efficiency. The amplifier is
manufactured on an advanced InGaP HBT process,
known industry-wide for its excellent reliability and
performance. The amplifier module is completely self-
contained, requiring no external matching components.
Absolute Maximum Ratings
Characteristic
Value
Supply Voltage V , Standby
6 V
CC
Mode, V
< 0.3, No RF Input Power
APC
Power Control Voltage
Band Select Voltage
Input Power (CW)
4 V
4 V
15 dBm
Operating Case Temperature
Storage Temperature
-35 to +85°C
-45 to 120°C
DC Specifications
Parameter
Condition
Min.
Typ.
3.2
Max.
4.2
10
Unit
V
Supply Voltage
2.8
Leakage Current
No RF Input Power
GSM
µA
V
Band Select Voltage
0
0.5
2.8
1.0
1.9
1.0
DCS/PCS
2.0
V
Band Select Current
Power Control Voltage
Power Control Current
mA
V
0.1
mA
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
Electrical Specifications
GSM Mode
Parameter
Frequency
Condition
Min.
880
34
Typ.
Max.
Unit
MHz
dBm
dBm
dB
915
Output Power
35
V
V
V
P
= 2.8 V, T = -20 to +70°C
32.5
60
CC
Dynamic Range
Power Control Slope
Power Added Efficiency
Input Power
= 0.1–1.9 V
= 0.1–1.9 V
= 34 dBm
APC
APC
OUT
75
55
6
150
dB/V
APC
50
3
%
10
dBm
Input VSWR
P
P
P
= 5–35 dBm
2:1
-40
-25
-10
-72
-84
-76
-76
OUT
Forward Isolation
= -5 dBm, V
= 0.1 V
= 0.1 V
dBm
dBm
dBm
dBm
dBm
dBm
dBm
IN
IN
APC
= 10 dBm, V
APC
Harmonics
2 F …7 F
0 0
Noise in the R Band
925 MHz, 100 KHz BW
X
935 MHz, 100 KHz BW
1805–1880 MHz, 100 KHz BW
1930–1990 MHz, 100 KHz BW
Output VSWR = 10:1
Ruggedness
No Module Damage
or Permanent
All Phase Angles, V = 4.2 V,
CC
P
= 10 dBm, V
= 1.9 V
Performance Degradation
IN
APC
Stability
Output VSWR = 10:1
All Phase Angles, V = 4.2 V,
-36
dBm
CC
P
= 10 dBm, V
= 1.9 V
IN
APC
Band to Band Isolation
2 F Measured at DCS Output
-20
-20
dBm
dBm
0
3 F Measured at DCS Output
0
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25°C
DCS/PCS Mode
Parameter
Condition
Min.
1710
1850
31.9
29.5
60
Typ.
Max.
1785
1910
Unit
MHz
MHz
dBm
dBm
dB
Frequency
DCS
PCS
Output Power
32.5
V
V
V
P
= 2.8 V, T = -20 to +70°C
CC
Dynamic Range
Power Control Slope
Power Added Efficiency
Input Power
= 0.1–1.9 V
= 0.1–1.9 V
= 31.9 dBm
APC
APC
OUT
75
50
6
150
dB/V
APC
42
3
%
10
dBm
Input VSWR
P
P
P
= 0–32 dBm
2:1
-48
-20
-10
-76
OUT
Forward Isolation
= -5 dBm, V
= 0.1 V
= 0.1 V
dBm
dBm
dBm
dBm
IN
IN
APC
= 10 dBm, V
APC
Harmonics
2 F …7 F
0 0
Noise in the R Band
1805–1880 MHz, 100 KHz BW
Output VSWR = 10:1
All Phase Angles, V = 4.2 V,
X
Ruggedness
No Module Damage
or Permanent
CC
P
=10 dBm, V
= 1.9 V
Performance Degradation
IN
APC
Stability
Output VSWR = 10:1
All Phase Angles, V = 4.2 V,
-36
dBm
CC
P
= 10 dBm, V
= 1.9 V
IN
APC
Unless otherwise stated: pulsed operation @ 12.5% duty cycle, 50 Ω system, VCC = 3.2 V, PIN = 6 dBm and temperature = 25°C
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
Typical Performance Data
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed
performance adds 0.5 dB of output power and 5–7% in PAE.
40
30
70
60
50
40
30
20
10
0
40
30
70
60
50
40
30
20
10
0
20
20
10
10
POUT
POUT
Gain
0
0
-10
-20
-30
-40
-10
-20
-30
-40
Gain
PAE
PAE
-10
-10
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
VAPC (V)
VAPC (V)
V
CC
= 3.2 V, Frequency = 900 MHz,
V
CC
= 3.2 V, Frequency = 1750 MHz,
P
IN
= 6 dBm
P
IN
= 6 dBm
40
30
70
60
50
40
30
20
10
0
40
30
70
60
50
40
30
20
10
0
20
20
POUT 880 MHz
OUT 900 MHz
10
10
POUT
Gain
PAE
P
PAE
880 MHz
0
0
POUT 915 MHz
-10
-20
-30
-40
-10
-20
-30
-40
PAE
900 MHz
PAE
915 MHz
-10
-10
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
VAPC (V)
VAPC (V)
V
CC
= 3.2 V, Frequency = 1910 MHz,
V
CC
= 2.8 V, Frequency = 900 MHz,
P
IN
= 6 dBm
P
IN
= 6 dBm
40
30
70
60
50
40
30
20
10
0
40
30
70
60
50
40
30
20
10
0
20
20
POUT 880 MHz
POUT 900 MHz
POUT 880 MHz
POUT 900 MHz
10
10
PAE
880 MHz
PAE
880 MHz
0
0
POUT
915 MHz
-10
-20
-30
-40
-10
-20
-30
-40
PAE
900 MHz
POUT 915 MHz
PAE
900 MHz
PAE
915 MHz
PAE 915 MHz
-10
2.0
-10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VAPC (V)
0
0.5
1.0
1.5
VAPC (V)
P
OUT
and PAE vs. V
and
P
OUT
and PAE vs. V
APC
APC
Frequency, V = 3.2 V, P = 6 dBm
and Frequency, V = 4.2 V, P = 6 dBm
CC
IN
CC
IN
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
3
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
All data taken under CW conditions and include 0.2 dB of input and output fixture losses deembedded, GSM class 4 pulsed
performance adds 0.5 dB of output power and 5–7% in PAE.
60
50
40
30
20
10
0
40
70
60
50
40
30
20
10
0
40
30
20
10
0
POUT 75˚C
POUT -25˚C
POUT 25˚C
30
POUT @ VCC = 4.2
POUT @ VCC = 3.2
POUT
20
10
@
PAE @
VCC = 3.2
VCC = 2.8
0
-10
-20
-30
-40
PAE 75˚C
PAE 25˚C
PAE @
VCC = 4.2
-10
-20
-30
PAE -25˚C
PAE @ VCC = 2.8
-10
2.0
-10
0
0.5
1.0
1.5
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VAPC (V)
Control Voltage – VAPC (V)
P
OUT
and PAE vs. V and V
CC APC
P
and PAE vs. Temperature
OUT
V
P
IN
= 6 dBm
= 3.2 V, P = 6 dBm,
CC
IN
Frequency = 880 MHz
60
50
40
30
20
10
0
60
50
40
30
20
10
0
40
30
20
10
0
40
30
20
10
0
POUT 75˚C
POUT 25˚C
POUT 75˚C
POUT 25˚C
POUT -25˚C
PAE 75˚C
POUT -25˚C
PAE 25˚C
PAE -25˚C
PAE -25˚C
-10
-20
-30
-10
-20
-30
PAE 25˚C
PAE 75˚C
-10
-10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Control Voltage – VAPC (V)
Control Voltage – VAPC (V)
P
and PAE vs. Temperature
P
and PAE vs. Temperature
= 3.2 V, P = 6 dBm,
CC IN
OUT
V
OUT
V
= 3.2 V, P = 6 dBm,
CC
IN
Frequency = 1710 MHz
Frequency = 1850 MHz
36.0
35.8
35.6
35.4
35.2
35.0
34.8
34.6
34.4
34.2
34.0
60
59
58
57
56
55
54
53
52
51
50
40
30
20
F0 (dBm)
10
POUT
0
2 F0 (dBm)
-10
-20
-30
-40
-50
PAE
3 F0 (dBm)
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
VAPC (V)
Duty Cycle (%)
Duty Cycle Effects on Module Performance
= 3.2 V, Frequency = 900 MHz,
Harmonic Performance V = 3.2 V,
CC
V
CC
Frequency = 900 MHz, P = 6 dBm
IN
P
IN
= 6 dBm
4
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 8/01A
Tri-Band HBT Power Amplifier Module
AP134-501
Application Schematic
Pin Out
50 Ω Microstrip
50 Ω Microstrip
VCC
DCS/
DCS/
PCS In
PCS Out
1
16
13
1
16
15
14
13
2
3
4
12
11
10
VAPC
VCC
VBS
GND
VCC
VAPC
VCC
VBS
2
CMOS ASIC
11
VCC
3
4
GND
5
6
7
8
9
5
6
9
50 Ω Microstrip
50 Ω Microstrip
GSM
In
GSM
Out
VCC
Pin Out Description
Pin
Symbol
Description
1
DCS/
RF input to DCS/PCS power amplifier.
PCS_In
2
3
V
Analog power control input voltage.
10 nF RF bypassing capacitor
recommended.
APC
CC
V
Power supply input voltage. A 10 µF
RF bypassing capacitor is required.
This capacitor is only required to help
reduce power supply ripple on the test
board.
4
5
6
V
Band select input voltage.
BS
GSM_In
VCC
RF input to GSM power amplifier.
Power supply input voltage. 10 µF
RF bypassing capacitor is required.
This capacitor is only required to help
reduce power supply ripple on the test
board.
7
GND
Ground connection.
8
GND
Ground connection.
9
GSM_Out
GND
RF output for GSM amplifier.
Ground connection.
10
11
V
Power supply input voltage. 10 µF
RF bypassing capacitor is required.
This capacitor is only required to help
reduce power supply ripple on the test
board.
CC
12
13
GND
Ground connection.
DCS/
PCS_Out
RF output for DCS/PCS power
amplifier.
14
15
16
GND
GND
Ground connection.
Ground connection.
V
Power supply input voltage. 10 µF
RF bypassing capacitor is required.
This capacitor is only required to help
reduce power supply ripple on the test
board.
CC
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
5
Specifications subject to change without notice. 8/01A
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