Z1PK110H [ZOWIE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | Z1PK110H |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZOWIE
Schottky Barrier Diode
(100V / 1.0 A)
Z1PK110H
FEATURES
OUTLINE DIMENSIONS
*
Halogen-free type
Case : Z1PAK
Unit : mm
* Compliance to RoHS product
*
*
*
*
Lead less chip form, no lead damage
0.05
Low power loss, High efficiency
2.00 ± 0.1
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
*
Patented ZPAKTM Package Technology
0.50 ± 0.1
0.50 ± 0.1
APPLICATION
+ 0.2
0.80
- 0.1
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
1.00 ± 0.1
Equivalent : SOD-323
MARKING
0.45 ± 0.1
Telecommunication
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.005 gram
Amps class
Cathode mark
A
10
.
Voltage class
Halogen-free type
PACKING
*
*
*
3,000 pieces per 7" (178mm ± 2mm) reel
5 reels per box
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
100
1.0
V
A
Peak forward surge current
IFSM
Tj
8.3ms single half sine-wave
15
A
oC
oC
Operating junction temperature Range
Storage temperature Range
-55 to +150
- 55 to +150
TSTG
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward voltage (NOTE 1)
VF
IF = 1.0 A
-
0.78
0.82
1.0
V
VR = Max. VRRM , Ta = 25 oC
-
-
uA
Repetitive peak reverse current (NOTE 1)
Junction capacitance
IRRM
Cj
VR = 4V, f = 1.0 MHz
Junction to ambient
Junction to lead
-
-
-
30
112
18
-
-
-
pF
Rth(JA)
Rth(JL)
oC/W
oC/W
Thermal resistance
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 1.0 x 0.5mm copper pad areas.
REV. 0
2011/10
ZOWIE
Z1PK110H
(100V / 1.0 A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
1.0
15
10
8.3ms Single Half Sine-Wave
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 1.0 X 0.5mm
COPPER PAD AREAS
0.5
5
0
0
0
25
50
75
100
125
150
175
1
10
100
LEAD TEMPERATURE, o
C
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
10
100
10
1.00
TJ=100oC
0.10
1.0
Ta=25oC
0.01
.001
TJ=25oC
0.10
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
20
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0
40
60
80
100
FORWARD VOLTAGE, (V)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
TJ=25oC
f=1.0MHz
Vsig=50mVP-P
10
1
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2011/10
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