MMBTA43 [ZOWIE]
HIGH VOLTAGE TRANSISTOR NPN SILICON; 高压晶体管NPN硅
| 型号： | MMBTA43 |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | HIGH VOLTAGE TRANSISTOR NPN SILICON |
| 文件： | 总3页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
COLLECTOR
3
3
BASE
1
MMBTA43
1
2
2
SOT-23
EMITTER
MAXIMUM RATINGS
Value
200
200
6.0
Symbol
VCEO
VCBO
VEBO
IC
Unit
Vdc
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Vdc
Emitter-Base Voltage
Vdc
Collector Current-Continuous
500
mAdc
THERMAL CHARACTERISTICS
Max.
Symbol
PD
Unit
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
225
1.8
mW
Derate above 25oC
mW / oC
Thermal Resistance Junction to Ambient
R
JA
556
oC / W
Total Device Dissipation Alumina Substrate,(2) TA=25oC
300
2.4
mW
Derate above 25oC
PD
mW / oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
JA
417
oC / W
oC
TJ,TSTG
-55 to +150
DEVICE MARKING
MMBTA43=M1E
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Max.
Symbol
Min.
Unit
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage(3)
( IC= 1.0mAdc, IB=0 )
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
200
200
6.0
-
-
-
Vdc
Vdc
Collector-Base Breakdowe Voltage
( IC= 100uAdc, IE=0 )
Emitter - Base Breakdowe Voltage
( IE= 100 uAdc, IC=0 )
-
Vdc
Collector Cutoff Current
( VCE= 160 Vdc, IE = 0 )
0.1
0.1
uAdc
uAdc
Emitter Cutoff Curretn
( VEB= 4.0 Vdc, IC=0 )
IEBO
-
x
x
(1) FR-5=1.0 0.75 0.062in.
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
Max.
Symbol
Min.
Unit
Characteristic
ON CHARACTERISTICS (3)
DC Current Gain
( IC= 1.0 mAdc, VCE= 10 Vdc )
( IC= 10 mAdc, VCE= 10 Vdc )
( IC= 30 mAdc, VCE= 10 Vdc )
25
40
40
-
-
-
HFE
-
Collector-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc )
VCE(sat)
VBE(sat)
-
-
0.5
0.9
Vdc
Vdc
Base-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
fT
50
-
-
MHZ
pF
( IC= 10 mAdc, VCE= 20 Vdc, f=100 MHZ )
Collector-Base Capacitance
Ccb
4.0
( VCB= 20 Vdc, IE=0, f=1.0 MHZ )
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBTA43
120
VCE = 10 Vdc
TJ = +125oC
100
80
TJ = 25oC
60
40
TJ = -55oC
20
0
0.1
1.0
10
100
I , COLLECTOR CURRENT ( mA )
C
Figure 1. DC Current Gain
100
10
80
70
60
50
40
VCE=20 V
f=20MHz
TJ= 25oC
C
@ 1MHz
eb
1.0
0.1
30
20
10
C
@ 1MHz
100
cb
0.1
1.0
10
1000
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V , REVERSE VOLTAGE ( VOLTS )
R
I , COLLECTOR CURRENT ( mA )
C
Figure 3. Current-Gain-Bandwidth
Figure 2. Capacitance
1.4
1.2
1.0
0.8
0.6
V
V
V
V
V
V
V
V
V
@ 25oC, I /I = 10
C B
CE(sat)
CE(sat)
CE(sat)
BE(sat)
BE(sat)
BE(sat)
BE(on)
BE(on)
BE(on)
@ 125oC, I /I = 10
C B
@ -55oC, I /I = 10
C B
@ 25oC, I /I = 10
C B
@ 125oC, I /I = 10
C B
@ -55oC, I /I = 10
C B
@ 25oC, V
CE
= 10 V
= 10 V
@ 125oC, V
@ -55oC, V
0.4
0.2
0.0
CE
= 10 V
CE
0.1
1.0
10
100
I , COLLECTOR CURRENT ( mA )
C
Figure 4. "On" Voltages
REV. : 0
Zowie Technology Corporation
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