BSCD56H [ZOWIE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | BSCD56H |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZOWIE
Schottky Barrier Diode
(20V~100V / 5.0A)
BSCD52H THRU BSCD510H
FEATURES
OUTLINE DIMENSIONS
*
*
*
*
*
*
*
Halogen-free type
Case : 2114
Unit : mm
Lead free product, compliance to RoHS
Lead less chip form, no lead damage
Lead-free solder joint, no wire bond & lead frame
Low power loss, High efficiency
0.05 ± 0.005
5.2 ± 0.1
High current capability, low VF
0.015
±
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
R0.695
APPLICATION
1.15 ± 0.1
1.15 ± 0.1
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
JEDEC : DO-214AA
MECHANICAL DATA
MARKING
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.042 gram
Cathode mark
Series code
BSCD
Halogen-free type
5
.
PACKING
Amps class
Voltage class
*
*
*
5,000 pieces per 13" (330mm ± 2mm) reel
2 reels per box
5 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Rating
Symbol
Conditions
Unit
BSCD52H BSCD54H BSCD56H BSCD510H
20 40 60 100
Repetitive peak reverse voltage
VRRM
IF(AV)
V
A
Average forward current (SEE FIG.1)
5.0
Peak forward surge current
IFSM
Tj
8.3ms single half sine-wave
105
A
oC
oC
Operating junction temperature Range
Storage temperature Range
-55 to +125
-55 to +150
TSTG
-55 to +150
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 1.0A
IF = 3.0A
IF = 5.0A
-
-
-
0.38
0.45
0.50
-
-
BSCD52H
/
BSCD54H
V
0.55
IF = 1.0A
IF = 3.0A
IF = 5.0A
-
-
-
0.42
0.52
0.65
-
-
BSCD56H
V
V
Forward voltage (NOTE 1)
VF
0.70
IF = 1.0A
IF = 3.0A
IF = 5.0A
-
-
-
0.53
0.69
0.79
-
-
BSCD510H
0.85
Repetitive peak reverse current
Junction capacitance
IRRM
Cj
VR = Max. VRRM , Ta = 25 oC
-
-
-
-
0.045
250
55
0.50
mA
pF
VR = 4V, f = 1.0 MHz
-
-
-
Rth(JA)
Rth(JL)
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
oC/W
oC/W
Thermal resistance
17
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
(3) Preliminary draft.
REV. 2
2009/059
ZOWIE
BSCD52H THRU BSCD510H
(20V~100V/5.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
120
100
80
6.0
5.0
8.3ms Single Half Sine-Wave
BSCD56H & BSCD510H
4.0
3.0
2.0
60
BSCD52H & BSCD54H
40
20
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
1.0
0
0
1
10
100
0
50
70
90
110
130
150
170
o
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE,
C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
100
10
1.0
TJ=100oC
1
0.10
0.01
0.10
TJ=25oC
0.01
.001
BSCD52H & BSCD54H
BSCD56H
BSCD510H
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
4000
1000
TJ = 25oC
f=1.0MHz
Vsig=50mVP-P
100
50
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 2
2009/05
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