BSCD510H [ZOWIE]

Schottky Barrier Diode; 肖特基二极管


型号：	BSCD510H
厂家：	ZOWIE TECHNOLOGY CORPORATION
描述：	Schottky Barrier Diode 肖特基二极管肖特基二极管
文件：	总2页 (文件大小：68K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ZOWIE

Schottky Barrier Diode

(20V~100V / 5.0A)

BSCD52H THRU BSCD510H

FEATURES

OUTLINE DIMENSIONS

Halogen-free type

Case : 2114

Unit : mm

Lead free product, compliance to RoHS

Lead less chip form, no lead damage

Lead-free solder joint, no wire bond & lead frame

Low power loss, High efficiency

0.05 ± 0.005

5.2 ± 0.1

High current capability, low VF

0.015

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

R0.695

APPLICATION

1.15 ± 0.1

Switching mode power supply applications

Portable equipment battery applications

High frequency rectification

DC / DC Converter

Telecommunication

JEDEC : DO-214AA

MECHANICAL DATA

MARKING

Case : Packed with FRP substrate and epoxy underfilled

Terminals : Pure Tin plated (Lead-Free),

solderable per MIL-STD-750, Method 2026.

Polarity : Laser Cathode band marking

Weight : 0.042 gram

Cathode mark

Series code

BSCD

Halogen-free type

PACKING

Amps class

Voltage class

5,000 pieces per 13" (330mm ± 2mm) reel

2 reels per box

5 boxes per carton

Absolute Maximum Ratings (Ta = 25 ^oC)

ITEM

Rating

Symbol

Conditions

Unit

BSCD52H BSCD54H BSCD56H BSCD510H

20 40 60 100

Repetitive peak reverse voltage

VRRM

IF(AV)

Average forward current (SEE FIG.1)

5.0

Peak forward surge current

IFSM

8.3ms single half sine-wave

105

^oC

Operating junction temperature Range

Storage temperature Range

-55 to +125

-55 to +150

TSTG

-55 to +150

Electrical characteristics (Ta = 25 ^oC)

ITEM

Symbol

Conditions

Type

Min.

Typ.

Max.

Unit

IF = 1.0A

IF = 3.0A

IF = 5.0A

0.38

0.45

0.50

BSCD52H

BSCD54H

0.55

IF = 1.0A

IF = 3.0A

IF = 5.0A

0.42

0.52

0.65

BSCD56H

Forward voltage (NOTE 1)

0.70

IF = 1.0A

IF = 3.0A

IF = 5.0A

0.53

0.69

0.79

BSCD510H

0.85

Repetitive peak reverse current

Junction capacitance

IRRM

VR = Max. VRRM , Ta = 25 ^oC

0.045

250

0.50

VR = 4V, f = 1.0 MHz

Rth(JA)

Rth(JL)

Junction to ambient (NOTE 2)

Junction to lead (NOTE 2)

^oC/W

Thermal resistance

NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.

(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.

(3) Preliminary draft.

REV. 2

2009/059

ZOWIE

BSCD52H THRU BSCD510H

(20V~100V/5.0A)

FIG.1 - FORWARD CURRENT DERATING CURVE

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

120

100

6.0

5.0

8.3ms Single Half Sine-Wave

BSCD56H & BSCD510H

4.0

3.0

2.0

BSCD52H & BSCD54H

RESISTIVE OR

INDUCTIVE LOAD

P.C.B. MOUNTED ON

0.2X0.2"(5.0X5.0mm)

COPPER PAD AREAS

1.0

100

110

130

150

170

NUMBER OF CYCLES AT 60Hz

LEAD TEMPERATURE,

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

100

1.0

TJ=100^oC

0.10

0.01

0.10

TJ=25^oC

0.01

.001

BSCD52H & BSCD54H

BSCD56H

BSCD510H

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

100

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

4000

1000

TJ = 25^oC

f=1.0MHz

Vsig=50mVP-P

100

1.0

100

REVERSE VOLTAGE, VOLTS

REV. 2

2009/05

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