ZXT10P12DE6TC [ZETEX]

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR; 12V PNP硅低饱和开关晶体管
ZXT10P12DE6TC
型号: ZXT10P12DE6TC
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
12V PNP硅低饱和开关晶体管

晶体 开关 晶体管 功率双极晶体管 光电二极管
文件: 总6页 (文件大小:236K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZXT10P12DE6  
SuperSOT™  
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-12V; RSAT = 65m ; IC= -3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
m atrix structure com bined with advanced assem bly techniques to give  
extrem ely low on state losses. This m akes it ideal for high efficiency, low  
voltage switching applications.  
S OT2 3 -6  
FEATURES  
Low Equivalent On Resistance  
Extrem ely Low Saturation Voltage  
hFE characterised up to 10A  
IC=3A Continuous Collector Current  
SOT23-6 package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Power switches  
Motor control  
C
C
B
C
C
E
ORDERING INFORMATION  
DEVICE  
REEL S IZE  
TAPE WIDTH  
(m m )  
QUANTITY  
PER REEL  
(in ch e s )  
ZXT10P12DE6TA  
ZXT10P12DE6TC  
7
8m m e m b o s s e d  
8m m e m b o s s e d  
3000 u n its  
10000 u n its  
Top View  
13  
DEVICE MARKING  
717  
ISSUE 1 - SEPTEMBER 2000  
1
ZXT10P12DE6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
LIMIT  
-12  
-12  
-5  
UNIT  
V
Co lle cto r-Ba s e Vo lta g e  
Co lle cto r-Em itte r Vo lta g e  
Em itte r-Ba s e Vo lta g e  
Pe a k Pu ls e Cu rre n t  
V
V
V
CBO  
CEO  
EBO  
V
V
I
I
I
-10  
-3  
A
CM  
Co n tin u o u s Co lle cto r Cu rre n t  
Ba s e Cu rre n t  
A
C
B
-500  
m A  
Po w e r Dis s ip a tio n a t TA=25°C (a )  
Lin e a r De ra tin g Fa cto r  
P
1.1  
8.8  
W
m W/°C  
D
Po w e r Dis s ip a tio n a t TA=25°C (b )  
Lin e a r De ra tin g Fa cto r  
P
1.7  
13.6  
W
m W/°C  
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
UNIT  
J u n ctio n to Am b ie n t (a )  
J u n ctio n to Am b ie n t (b )  
R
R
113  
73  
°C/W  
°C/W  
θJ A  
θJ A  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.  
ISSUE 1 - SEPTEMBER 2000  
2
ZXT10P12DE6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - SEPTEMBER 2000  
3
ZXT10P12DE6  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).  
PARAMETER  
S YMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS .  
Co lle cto r-Ba s e Bre a kd o w n  
Vo lta g e  
V
V
V
-12  
-12  
-5  
-35  
V
I =-100A  
(BR)CBO  
(BR)CEO  
C
Co lle cto r-Em itte r Bre a kd o w n  
Vo lta g e  
-25  
V
I =-10m A*  
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e  
Co lle cto r Cu t-Off Cu rre n t  
-8.5  
V
I =-100A  
E
(BR)EBO  
CBO  
I
I
I
-100  
-100  
-100  
n A  
n A  
n A  
V
V
V
=-10V  
=-4V  
CB  
Em itte r Cu t-Off Cu rre n t  
EBO  
EB  
Co lle cto r Em itte r Cu t-Off Cu rre n t  
=-10V  
CES  
CES  
Co lle cto r-Em itte r S a tu ra tio n  
Vo lta g e  
V
-10  
-17  
-140  
-150  
-300  
m V  
m V  
m V  
m V  
I =-0.1A, I =-10m A*  
C B  
CE(s a t)  
-100  
-100  
-195  
I =-1A, I =-10m A*  
C B  
I =-1.5A, I =-50m A*  
C
B
I =-3A, I =-50m A*  
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e  
Ba s e -Em itte r Tu rn -On Vo lta g e  
V
V
-0.90 -0.95  
-0.85 -0.90  
V
V
I =-3A, I =-50m A*  
C B  
BE(s a t)  
BE(o n )  
FE  
I =-3A, V =-2V*  
C
CE  
S ta tic Fo rw a rd Cu rre n t Tra n s fe r  
Ra tio  
h
300  
300  
180  
60  
475  
I =-10m A, V =-2V*  
C CE  
450  
275  
100  
70  
I =-0.1A, V =-2V*  
C CE  
I =-2.5A, V =-2V*  
C
CE  
I =-8A, V =-2V*  
C
CE  
45  
I =-10A, V =-2V*  
C CE  
Tra n s itio n Fre q u e n cy  
f
80  
110  
MHz  
I =-50m A, V =-10V  
T
C
CE  
f=100MHz  
Ou tp u t Ca p a cita n ce  
Tu rn -On Tim e  
C
21  
30  
p F  
n s  
n s  
V
=-10V, f=1MHz  
o b o  
(o n )  
(o ff)  
CB  
t
t
70  
V
=-6V, I =-2A  
C
=I =-50m A  
CC  
I
B1 B2  
Tu rn -Off Tim e  
130  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ISSUE 1 - SEPTEMBER 2000  
4
ZXT10P12DE6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - SEPTEMBER 2000  
5
ZXT10P12DE6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millim e tre s  
Min  
In ch e s  
Min  
Ma x  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Ma x  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e 1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - SEPTEMBER 2000  
6

相关型号:

ZXT10P20DE6

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX

ZXT10P20DE6

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
DIODES

ZXT10P20DE6QTA

Power Bipolar Transistor,
DIODES

ZXT10P20DE6TA

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX

ZXT10P20DE6TA

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
DIODES

ZXT10P20DE6TC

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX

ZXT10P20DE6TC

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
DIODES

ZXT10P40DE6

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX

ZXT10P40DE6

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
DIODES

ZXT10P40DE6TA

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX

ZXT10P40DE6TA

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
DIODES

ZXT10P40DE6TC

40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZETEX