ZXT10P12DE6TC [ZETEX]
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR; 12V PNP硅低饱和开关晶体管
| 型号： | ZXT10P12DE6TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR |
| 文件： | 总6页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXT10P12DE6
SuperSOT™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO=-12V; RSAT = 65m ; IC= -3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
m atrix structure com bined with advanced assem bly techniques to give
extrem ely low on state losses. This m akes it ideal for high efficiency, low
voltage switching applications.
S OT2 3 -6
FEATURES
•
•
•
•
•
Low Equivalent On Resistance
Extrem ely Low Saturation Voltage
hFE characterised up to 10A
IC=3A Continuous Collector Current
SOT23-6 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Managem ent Functions
Power switches
Motor control
C
C
B
C
C
E
ORDERING INFORMATION
DEVICE
REEL S IZE
TAPE WIDTH
(m m )
QUANTITY
PER REEL
(in ch e s )
ZXT10P12DE6TA
ZXT10P12DE6TC
7
8m m e m b o s s e d
8m m e m b o s s e d
3000 u n its
10000 u n its
Top View
13
DEVICE MARKING
717
ISSUE 1 - SEPTEMBER 2000
1
ZXT10P12DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT
-12
-12
-5
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
Pe a k Pu ls e Cu rre n t
V
V
V
CBO
CEO
EBO
V
V
I
I
I
-10
-3
A
CM
Co n tin u o u s Co lle cto r Cu rre n t
Ba s e Cu rre n t
A
C
B
-500
m A
Po w e r Dis s ip a tio n a t TA=25°C (a )
Lin e a r De ra tin g Fa cto r
P
1.1
8.8
W
m W/°C
D
Po w e r Dis s ip a tio n a t TA=25°C (b )
Lin e a r De ra tin g Fa cto r
P
1.7
13.6
W
m W/°C
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
UNIT
J u n ctio n to Am b ie n t (a )
J u n ctio n to Am b ie n t (b )
R
R
113
73
°C/W
°C/W
θJ A
θJ A
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
ISSUE 1 - SEPTEMBER 2000
2
ZXT10P12DE6
TYPICAL CHARACTERISTICS
ISSUE 1 - SEPTEMBER 2000
3
ZXT10P12DE6
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).
PARAMETER
S YMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS .
Co lle cto r-Ba s e Bre a kd o w n
Vo lta g e
V
V
V
-12
-12
-5
-35
V
I =-100A
(BR)CBO
(BR)CEO
C
Co lle cto r-Em itte r Bre a kd o w n
Vo lta g e
-25
V
I =-10m A*
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
-8.5
V
I =-100A
E
(BR)EBO
CBO
I
I
I
-100
-100
-100
n A
n A
n A
V
V
V
=-10V
=-4V
CB
Em itte r Cu t-Off Cu rre n t
EBO
EB
Co lle cto r Em itte r Cu t-Off Cu rre n t
=-10V
CES
CES
Co lle cto r-Em itte r S a tu ra tio n
Vo lta g e
V
-10
-17
-140
-150
-300
m V
m V
m V
m V
I =-0.1A, I =-10m A*
C B
CE(s a t)
-100
-100
-195
I =-1A, I =-10m A*
C B
I =-1.5A, I =-50m A*
C
B
I =-3A, I =-50m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
-0.90 -0.95
-0.85 -0.90
V
V
I =-3A, I =-50m A*
C B
BE(s a t)
BE(o n )
FE
I =-3A, V =-2V*
C
CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r
Ra tio
h
300
300
180
60
475
I =-10m A, V =-2V*
C CE
450
275
100
70
I =-0.1A, V =-2V*
C CE
I =-2.5A, V =-2V*
C
CE
I =-8A, V =-2V*
C
CE
45
I =-10A, V =-2V*
C CE
Tra n s itio n Fre q u e n cy
f
80
110
MHz
I =-50m A, V =-10V
T
C
CE
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
21
30
p F
n s
n s
V
=-10V, f=1MHz
o b o
(o n )
(o ff)
CB
t
t
70
V
=-6V, I =-2A
C
=I =-50m A
CC
I
B1 B2
Tu rn -Off Tim e
130
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - SEPTEMBER 2000
4
ZXT10P12DE6
TYPICAL CHARACTERISTICS
ISSUE 1 - SEPTEMBER 2000
5
ZXT10P12DE6
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
b
e
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
DIM Millim e tre s
Min
In ch e s
Min
Ma x
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
Ma x
A
0.90
0.35
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
A1
A2
b
0.00
0
0.90
0.035
0.014
0.0035
0.110
0.102
0.059
0.004
0.35
C
0.09
D
2.80
E
2.60
E1
L
1.50
0.10
e
0.95 REF
1.90 REF
0°
0.037 REF
0.074 REF
0°
e 1
L
10°
10°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
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agents and distributors in
major countries world-wide
© Zetex plc 2000
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D-81673 München
Germany
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Fax: (49) 89 45 49 49 49
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Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - SEPTEMBER 2000
6
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