ZXMN2A02N8TC [ZETEX]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | ZXMN2A02N8TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2A02N8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= 20V; R
= 0.02 I = 10.2A
DS(ON) D
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A02N8TA
ZXMN2A02N8TC
7”
12mm
12mm
500 units
13”
2500 units
DEVICE MARKING
•
ZXMN
2A02
Top View
ISSUE 6 - FEBRUARY 2007
1
SEMICONDUCTORS
ZXMN2A02N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
20
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
12
(b)
(b)
(a)
Continuous Drain Current V =10V; T =25°C
I
10.2
8.2
8.3
GS
A
A
A
D
V
V
=10V; T =70°C
GS
=10V; T =25°C
GS
(c)
Pulsed Drain Current
I
I
I
50
4.3
50
A
A
A
DM
S
(b)
Continuous Source Current (Body Diode)
(c)
Pulsed Source Current (Body Diode)
SM
(a)
Power Dissipation at T =25°C
A
Linear Derating Factor
P
1.56
12.5
W
mW/°C
D
(b)
Power Dissipation at T =25°C
A
Linear Derating Factor
P
2.5
20
W
mW/°C
D
Operating and Storage Temperature Range
T :T
-55 to 150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
80
UNIT
°C/W
°C/W
(a)
Junction to Ambient
R
R
θJA
θJA
(b)
Junction to Ambient
50
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature.
ISSUE 6 - FEBRUARY 2007
2
SEMICONDUCTORS
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
3
SEMICONDUCTORS
ZXMN2A02N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
STATIC
SYMBOL MIN. TYP. MAX. UNIT
CONDITIONS.
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
I
=250μA, V
=0V
(BR)DSS
D
GS
=20V, V =0V
DS
20
V
I
I
V
DSS
GS
=Ϯ12V, V
1
A
nA
V
=0V
GSS
GS
=250A, V
DS
= V
100
Gate-Source Threshold Voltage
Static Drain-Source On-State
V
R
I
GS(th)
DS(on)
DS
=4.5V, I =11A
GS
0.7
V
⍀
⍀
D
V
0.02
0.04
GS
GS
D
(1)
Resistance
V
=2.5V, I =8.4A
D
(1)(3)
Forward Transconductance
g
V
V
=10V,I =11A
D
fs
DS
27
S
(3)
DYNAMIC
Input Capacitance
C
C
C
iss
1900
356
pF
pF
pF
=10V, V
=0V,
DS
GS
Output Capacitance
oss
rss
f=1MHz
Reverse Transfer Capacitance
218
(2) (3)
SWITCHING
Turn-On Delay Time
Rise Time
t
t
t
t
d(on)
7.9
10
ns
ns
ns
ns
nC
nC
nC
V
R
=10V, I =1A
D
r
DD
≅6.0Ω, V
=4.5V
Turn-Off Delay Time
Fall Time
G
GS
d(off)
f
33.3
13.6
18.9
5.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Q
Q
Q
g
V
=10V,V
=4.5V,
DS
GS
gs
gd
I
=11A
D
4.9
(1)
Diode Forward Voltage
V
T =25°C, I =11.5A,
SD
J
S
0.85
0.95
V
V
=0V
GS
(3)
Reverse Recovery Time
t
T =25°C, I =2.1A,
J F
di/dt= 100A/μs
rr
16.3
7.8
ns
(3)
Reverse Recovery Charge
Q
rr
nC
NOTES
(1) Measured under pulsed conditions. Width Յ300μs. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - FEBRUARY 2007
4
SEMICONDUCTORS
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
5
SEMICONDUCTORS
ZXMN2A02N8
CHARACTERISTICS
ISSUE 6 - FEBRUARY 2007
6
SEMICONDUCTORS
ZXMN2A02N8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in thisdesign/application note are offered as design ideas. It is the responsibility ofthe user toensure thatthe circuit is fitforthe user's
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.
ISSUE 6 - FEBRUARY 2007
7
SEMICONDUCTORS
ZXMN2A02N8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MIN
MILLIMETRES
⍜
DIM
D
MAX
0.069
0.010
0.197
0.244
0.157
0.050
MIN
1.35
0.10
4.80
5.80
3.80
0.40
MAX
1.75
0.25
5.00
6.20
4.00
1.27
A
A1
D
H
E
0.053
0.004
0.189
0.228
0.150
0.016
Pin 1
c
L
e
0.050 BSC
1.27 BSC
Seating Plane
b
0.013
0.008
0Њ
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
b
e
c
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
⍜
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2007
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Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 6 - FEBRUARY 2007
8
SEMICONDUCTORS
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