ZXM64N02XTA [ZETEX]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | ZXM64N02XTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXM64N02X
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
D
S
S
S
G
ORDERING INFORMATION
D
D
D
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM64N02XTA
ZXM64N02XTC
7
12mm embossed
12mm embossed
1000 units
4000 units
Top View
13
DEVICE MARKING
•
ZXM4N02
PROVISIONAL ISSUE A - JULY 1999
121
ZXM64N02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDSS
VGS
LIMIT
20
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
A
± 12
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)
ID
5.4
4.3
Pulsed Drain Current (c)
IDM
IS
30
2.4
30
A
A
A
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
ISM
PD
Power Dissipation at TA=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
RθJA
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
70
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - JULY 1999
122
ZXM64N02X
TYPICAL CHARACTERISTICS
100
10
2.0
Refer Note (a)
1.5
1.0
0.5
0
Refer Note (b)
Refer Note (a)
DC
1s
100ms
1
10ms
1ms
100us
100m
0.1
1
10
100
0
20
40
60
80
100 120 140 160
VDS - Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Derating Curve
Ref Note (a)
80
60
40
20
0
120
90
60
30
0
D=0.5
D=0.5
D=0.2
D=0.1
D=0.2
D=0.1
Single Pulse
Single Pulse
0.0001 0.001
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
Refer Note (b)
Refer Note (a)
PROVISIONAL ISSUE A - JULY 1999
123
ZXM64N02X
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS 20
IDSS
V
ID=250µA, VGS=0V
VDS=20V, VGS=0V
VGS=± 12V, VDS=0V
ID=250µA, VDS= VGS
1
µA
nA
V
IGSS
100
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
0.7
6.1
Static Drain-Source On-State Resistance
(1)
0.040
0.050
VGS=4.5V, ID=3.8A
VGS=2.7V, ID=1.9A
Ω
Ω
Forward Transconductance (3)
DYNAMIC (3)
gfs
S
VDS=10V,ID=1.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
1100
350
pF
pF
pF
VDS=15 V, VGS=0V,
f=1MHz
100
td(on)
tr
td(off)
tf
5.7
ns
ns
ns
ns
nC
nC
nC
9.6
V
DD =10V, ID=3.8A
RG=6.2Ω, RD=2.6Ω
(Refer to test
circuit)
Turn-Off Delay Time
Fall Time
28.3
11.6
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Qg
16
VDS=16V,VGS=4.5V,
ID=3.8A
(Refer to test
circuit)
Qgs
Qgd
3.5
5.4
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.95
V
Tj=25°C, IS=3.8A,
VGS=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
trr
23.7
13.3
ns
Tj=25°C, IF=3.8A,
di/dt= 100A/µs
Qrr
nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
124
ZXM64N02X
TYPICAL CHARACTERISTICS
VGS
VGS
5V
4.5V
4.0V
3.5V
3.0V
2.5V
5.0V
100
10
100
4.5V
+150°C
25°C
4.0V
3.5V
3.0V
2.5V
10
2.0V
2.0V
1.5V
1
1.5V
1
0.1
0.1
0.1
1
10
0.1
1
10
VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
100
1.6
1.4
1.2
VDS=10V
RDS(on)
VGS=4.5V
ID=3.8A
10
1
1.0
0.8
0.6
T=150°C
T=25°C
VGS(th)
0.4
0.2
0
VGS=VDS
ID=250µA
0.1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
VGS - Gate-Source Voltage (V)
Tj - Junction Temperature (°C)
Normalised R
and V
GS(th)
DS(on)
Typical Transfer Characteristics
v Temperature
1
100
10
1
0.1
T=25°C
T=150°C
VGS=2.0V
VGS=2.5V
VGS=4.5V
0.01
100m
0.1
1
10
100
0
0.5
1
1.5
2
VSD - Source-Drain Voltage (V)
ID - Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
125
ZXM64N02X
TYPICAL CHARACTERISTICS
2000
1750
6.0
Vgs=0V
f=1Mhz
ID=3.8A
5.0
4.0
VDS=16V
Ciss
1500
1250
1000
750
Coss
Crss
3.0
2.0
1.0
500
250
0
0
0.1
1
10
100
0
2
4
6
8
10
12
14
16
VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
Switching Time Waveforms
Switching Time Test Circuit
PROVISIONAL ISSUE A - JULY 1999
126
ZXM64N02X
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
MIN
D
MIN
MAX
MAX
0.043
0.006
0.016
0.009
0.122
BSC
A
A1
B
1.10
0.15
0.40
0.23
3.10
BSC
3.10
BSC
0.70
6°
8
1
7
2
6
3
5
4
0.05
0.25
0.13
2.90
0.65
2.90
4.90
0.40
0°
0.002
0.010
0.005
0.114
0.0256
0.114
0.193
0.016
0°
C
e X 6
D
e
θ°
E
0.122
BSC
L
B
C
H
L
0.028
6°
Conforms to JEDEC MO-187 Iss A
q°
PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
agents and distributors in
major countries world-wide
Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
128
相关型号：
©2020 ICPDF网 联系我们和版权申明