ZVN4210ASTOA [ZETEX]
Small Signal Field-Effect Transistor, 0.45A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZVN4210ASTOA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 0.45A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 小信号场效应晶体管 |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4210A
ISSUE 2 – MARCH 94
FEATURES
*
*
*
100 Volt VDS
RDS(on)= 1.5Ω
Spice m odel available
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
VDS
VALUE
UNIT
V
Dra in -S o u rce Vo lta g e
100
450
Co n tin u o u s Dra in Cu rre n t a t Ta m b=25°C
Pu ls ed Dra in Cu rre n t
ID
m A
A
IDM
6
Ga te -S o u rce Vo lta g e
VGS
V
± 20
Po w e r Dis s ip atio n a t Ta m b=25°C
Op era tin g an d S to ra g e Tem p era tu re Ran g e
Pto t
700
m W
°C
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
S YMBOL MIN. MAX. UNIT CONDITIONS .
Dra in -S o u rce Bre a kd o w n
Vo lta g e
BVDS S
100
V
ID=1m A, VGS=0V
Ga te -S o u rce Th re s h o ld
Vo lta g e
VGS (th )
0.8
2.4
V
ID=1m A, VDS= VGS
Ga te -Bo d y Le aka g e
IGS S
IDS S
100
n A
V
GS=± 20V, VDS=0V
Ze ro Gate Vo ltag e Dra in
Cu rre n t
10
100
VDS=100V, VGS=0
VDS=80V, VGS=0V, T=125°C(2)
µA
µA
On -S tate Dra in Cu rre n t(1)
ID(o n )
2.5
A
VDS=25V, VGS=10V
VGS=10V,ID=1.5A
S ta tic Dra in -S o u rce On -S ta te
Re s is tan ce (1)
RDS (o n )
1.5
1.8
Ω
VGS=5V,ID=500m A
Fo rw ard Tran s co n d u cta n ce (1)(2g fs
)
250
m S
VDS=25V,ID=1.5A
In p u t Ca p a cita n ce (2)
Cis s
Co s s
100
40
p F
p F
Co m m o n S o u rce Ou tp u t
Ca p a citan ce (2)
VDS=25V, VGS=0V, f=1MHz
Re ve rs e Tra n s fe r Ca p a citan ce Crs s
(2)
12
p F
Tu rn -On De la y Tim e (2)(3)
Ris e Tim e (2)(3)
td (o n )
4
n s
n s
n s
n s
tr
8
VDD ≈25V, ID=1.5A
Tu rn -Off Delay Tim e (2)(3)
Fall Tim e (2)(3)
td (o ff)
tf
20
30
3-388
ZVN4210A
TYPICAL CHARACTERISTICS
8V 10V
5V 6V
VGS=3V 3.5V
100
VGS=
5
4
10V
9V
8V
7V
3
2
6V
5V
10
4V
3.5V
3V
1
2.5V
2V
10
0
1
0.1
0
1
2
3
4
5
6
7
8
9
10
1.0
VDS - Drain Source Voltage (Volts)
ID-Drain Current (Am ps)
Saturation Characteristics
On-resistance v drain current
2.6
1000
900
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
800
VGS=10V
700
600
500
400
300
ID=1.5A
VDS=10V
VGS=VDS
ID=1mA
G
ate
T
h
200
100
0
res
h
o
l
d
V
o
l
t
a
g
e
V
-50
150
175 200 225
100
-25
0
25 50 75
125
0
2
3
4
5
1
ID(on)- Drain Current (Amps)
Tj-Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
50V
20V
16
14
80V
200
160
120
ID=1.5A
12
10
8
6
80
Ciss
4
2
0
40
Coss
Crss
100
0
0
40
60
80
20
0
1
2
3
4
5
6
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-389
相关型号：
ZVN4210ASTOB
Small Signal Field-Effect Transistor, 0.45A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVN4210ASTZ
Small Signal Field-Effect Transistor, 0.45A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZVN4210GTA
Power Field-Effect Transistor, 0.8A I(D), 100V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
ZETEX
ZVN4210GTC
Power Field-Effect Transistor, 0.8A I(D), 100V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
ZETEX
ZVN4306ASM
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVN4306ASMTA
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVN4306ASMTC
Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
©2020 ICPDF网 联系我们和版权申明