ZTX789ASMTA [ZETEX]
Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZTX789ASMTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 3A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 晶体管 局域网 |
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 APRIL 94
ZTX789A
FEATURES
*
*
*
25 Volt VCEO
Gain of 200 at IC=2 Amps
Very low saturation voltage
APPLICATIONS
*
*
*
Darlington replacement
Battery powered circuits
Motor drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-25
-25
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-8
A
Continuous Collector Current
Practical Power Dissipation*
IC
-3
A
Ptotp
Ptot
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-25
-25
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-0.1
-0.1
VCB=-15V
µA
µA
IEBO
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.25
-0.45
-0.5
V
V
V
IC=-1A, IB=-10mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.0
V
IC=-1A, IB=-10mA*
Base-Emitter
Turn-On Voltage
-0.8
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
300
250
200
100
800
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
3-276
ZTX789A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
225
25
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
Cobo
ton
toff
35
400
ns
ns
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t1/tP
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-277
ZTX789A
TYPICAL CHARACTERISTICS
1.8
1.8
-55°C
+25°C
+100°C
+175°C
IC/IB=100
IC/IB=40
IC/IB=10
Tamb=25°C
IC/IB=100
1.6
1.6
1.4
1.2
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0
0.2
0
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
VCE=2V
IC/IB=100
1.6
1.6
1.4
1.2
750
500
250
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
0.6
0.4
0.2
0.2
0
0
0
0.01
0.1
10
1
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
hFE v IC
Single Pulse Test at Tamb=25°C
10
-55°C
+25°C
+100°C
VCE=2V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0
0.01
0.01
0.1
1
10
0.1
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-278
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