BZV61-27 [ZETEX]
Silicon Power Zener Diode; 广颖电稳压二极管
| 型号： | BZV61-27 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Silicon Power Zener Diode |
| 文件： | 总4页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZV61 / BZV62
Silicon Power Zener Diode
Part no.
Description
The BZV61/62 are hermetically sealed 35A-
forward current diodes, which are available in
different Zener voltages.
Features
Applications
•
•
•
•
Forward current 35A
•
•
Power supplies
Zener voltages 22V, 27V, 33V or 39V
Hermetic press-fit package
Rectifier diode in car alternators
Available in different modifications of the
package
Pinout details
Typical application circuit
exciting current
Alternator
1
2
+
-
BZV61: 1 – cathode; 2 - anode
BZV62: 1 – anode; 2 - cathode
3 x BZV61
3x BZV62
Ordering information
Device
Quantity per box
Options
BZV61-22; …; BZV61-39
BZV62-22; …; BZV62-39
500
500
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BZV61- black, BZV62 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BZV61………………………………... diode type
22………………………….……….. Zener voltage VZ (in V) 22
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© Zetex Semiconductors plc 2006
BZV61 / BZV62
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
BZV61-22 BZV62-22
BZV61-27 BZV62-27
BZV61-33 BZV62-33
BZV61-39 BZV62-39
7.2
5.8
4.8
4.2
Z-current
(continuous)
IZ
A
Tc = 25°C
sinusoidal,
f = 15 - 1000 Hz
TJ = 25°C,
half-sine wave,
Mean forward current
IF(AV)
35
A
A
600
≤ 10 ms
Surge forward current
IFSM
TJ = 175°C,
half-sine wave,
≤ 10 ms
TJ = 25°C,
half-sine wave,
500
1800
1250
≤ 10 ms
Maximum rated value
A²s
∫i²dt
TJ = 175°C,
half-sine wave,
≤ 10 ms
Repetitive peak forward current
Effective forward current
110
55
A
A
f = 15 - 1000 Hz
I
FRM=π*IF(AV)
sinusoidal,
f = 15 - 1000 Hz
IF(RMS)
Junction temperature
TJmax
Tstg
175
°C
°C
Storage temperature range
- 50 to + 150
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to case
RθJC
0.8
°C/W
Issue 2 – August 2006
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© Zetex Semiconductors plc 2006
BZV61 / BZV62
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
20.8
25.1
31
Typ.
22
Max.
23.3
28.9
35
Unit Test contitions
BZV61-22 BZV62-22
BZV61-27 BZV62-27
BZV61-33 BZV62-33
BZV61-39 BZV62-39
27
Z-voltage
VZ
V
at IZ = 100mA
33
37
39
41
IF = 35 A,
measuring time
1ms
Forward voltage
Reverse current
VF
IR
-
-
1.0
-
1.1
V
200
µA
at VZ –5V
BZV61-22 BZV62-22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
3.5
5
BZV61-27 BZV62-27
BZV61-33 BZV62-33
BZV61-39 BZV62-39
BZV61-22 BZV62-22
BZV61-27 BZV62-27
BZV61-33 BZV62-33
BZV61-39 BZV62-39
BZV61-22 BZV62-22
BZV61-27 BZV62-27
BZV61-33 BZV62-33
BZV61-39 BZV62-39
Dynamical
resistance
rZ
rZ
rZ
Ω
at IZ = 100mA
6
200
350
500
700
20
Dynamical
resistance
(information
value)
mΩ at IZ = 1A
Dynamical
resistance
(information
value)
35
mΩ at IZ = 10A
50
80
Issue 2 – August 2006
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© Zetex Semiconductors plc 2006
BZV61 / BZV62
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
Millimeters
TYP
Inches
TYP
MIN
15,00
5,70
2,10
3,10
15,50
12,75
12,30
3,00
MAX
16,00
6,70
2,50
3,70
15,90
12,85
13,10
4,00
MIN
MAX
0,630
0,264
0,098
0,146
0,626
0,506
0,516
0,157
A
15,50
6,20
2,30
0,591
0,224
0,083
0,122
0,610
0,502
0,484
0,118
0,610
0,244
0,091
0,134
0,618
0,504
0,500
0,138
A1
A2
b
3,40
D
15,70
12,80
12,70
3,50
D1
D2
L
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Americas
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The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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© Zetex Semiconductors plc 2006
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