BS107PT [ZETEX]
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; N沟道增强型垂直DMOS FET
| 型号： | BS107PT |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
BS107PT
ISSUE 2 – SEPT 93
FEATURES
*
*
200 Volt VDS
RDS(on)=28Ω
D
G
S
E-Line
TO92 Com patible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Drain-Source Voltage
V
200
0.12
DS
Continuous Drain Current at T
Pulsed Drain Current
=25°C
I
A
am b
D
I
2
A
DM
Gate-Source Voltage
V
V
±20
GS
Power Dissipation at T
=25°C
P
500
m W
°C
am b
tot
Operating and Storage Tem perature Range
T :T
-55 to +150
j
stg
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
I =100µA, V =0V
Drain-Source
Breakdown Voltage
BV
200
230
V
DSS
D
GS
Gate Body Leakage
Drain Cut-Off Current
Drain Cut-Off Current
I
10
30
1
nA
nA
µA
VGS=15V, V =0V
DS
GSS
I
V
=0V, V =130V
DSS
GS DS
I
V
=0.2V, V =70V
DSX
GS DS
Static Drain-Source
on-State Resistance
R
15
28
30
V
=2.6V, I =20m A*
=2.7V, I =100m A*
D
Ω
Ω
DS(on)
GS D
V
GS
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-24
BS107PT
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
VGS=
V
10V
6V
GS=
0.5
0.4
0.3
10V
6V
4V
0.6
0.4
0.2
0.2
0.1
0
4V
3V
3V
0
0
20
40
60
80
100
0
2
4
6
8
10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
30
2.5
2.0
1.5
1.0
0.5
0
I
D=
20
500m A
I
D=
100m A
10
0
50mA
25mA
250m A
I00m A
0
2
4
6
8
10
2
2.5
3.0
3.5
4.0
4.5
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
Voltage Saturation Characteristics
0.6
60
Ciss
VDS=25V
VDS=10V
0.5
0.4
0.3
0.2
0.1
0
50
40
30
20
10
0
C
C
oss
rss
40
0
2
4
6
8
10
0
10
20
30
50
VGS-Gate Source Voltage (Volts)
VDS -Drain-Source Voltage (Volts)
Transfer characteristics
Capacitance v drain-source voltage
3-25
BS107PT
TYPICAL CHARACTERISTICS
500
500
400
300
200
100
400
300
200
100
VDS=
25V
VDS=
25V
0
0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
.8
10
I
D(On)-Drain Current (Am ps)
VGS-Gate-Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
50V 100V 180V
VDS=
10
100
ID=500m A
50
ID=
5
500m A
250m A
I00mA
25mA
0
10
0
0.5 1.0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
5
10
20
Q-Charge (nC)
VGS-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
Gate charge v gate-source voltage
2.4
2.0
1.6
1.2
0.8
0.5
500
DS(on)
e R
400
300
200
100
0
V
GS=5V
c
n
ta
s
i
ID=100m A
es
e R
rc
u
o
S
-
n
Drai
I
D=-1m A
VDS VGS
=
-50 -40
-20
0
20 40 60 80 100
140 150
120
0
20 40 60 80 100 120 140 160 180 200
T
amb - Ambient Temperature (°C)
T-Temperature (°C)
DS(on) GS(th)
v Temperature
Normalised R
and V
Power v temperature derating curve
3-26
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