BCX70JR-AX [ZETEX]
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR; SOT23 NPN硅平面小信号晶体管
| 型号： | BCX70JR-AX |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
BCX70
SMALL SIGNAL TRANSISTOR
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCX70G AG
BCX70H AH
E
BCX70J
AJ
C
BCX70K AK
BCX70GR AW
BCX70HR 9P
BCX70JR AX
BCX70KR P9
B
COMPLEMENTARY TYPE BCX71
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Emitter Voltage
45
Collector-Emitter Voltage
45
V
Emitter-Base Voltage
5
200
V
Continuous Collector Current
Base Current
mA
mA
mW
°C
IB
50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
tj:tstg
330
-55 to +150
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)
CE
c
hFEGroup G
hFEGroup H
hFE Group J
hFEGroup K
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h11e
h12e
h21e
h22e
1.6
2.7
1.5
200
18
4.5
2.5
3.6
2
6.0
50
3.2
4.5
2
8.5
60
4.5
7.5
3
12
kΩ
-4
10
260
24
330
30
520
50
30
100
µS
SWITCHING CIRCUIT
-V
V (+10V)
R
R
1µsec
R
+10V
t < 5nsec
Z ≥ 100kΩ
Oscilloscope
t < 5nsec
Mark/Space ratio < 0.01
50Ω
Z =50Ω
PAGE NO
BCX70
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
45
5
V
V
IC=2mA
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
V(BR)EBO
ICES
IEBO=1µA
20
20
nA
µA
VCES=45V
VCES=45V,
Tamb=150oC
Emitter-Base Cut-Off Current
IEBO
20
nA
VEBO=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.12 0.35
0.20 0.55
V
V
IC=10mA,IB= 0.25mA
IC= 50mA, IB=1.25mA
Base-Emitter
Saturation Voltage
VBE(SAT)
VBE
0.60 0.70 0.85
0.70 0.83 1.05
V
V
IC=10mA,IB=0.25mA,
IC=50mA, IB=1.25mA
Base - Emitter Voltage
0.52
0.55 0.65 0.75
0.78
V
V
V
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=50mA, VCE =1V
Static Forward Current
Transfer Ratio
78
170
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
BCX70G
hFE
hFE
hFE
120
50
220
310
460
630
20
180
70
145
250
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
BCX70H
BCX70J
BCX70K
40
250
90
220
350
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
100
380
100
300
500
IC=10µA, VCE =5V
IC=2mA, VCE =5V
IC=50mA, VCE =1V
hFE
fT
Transition Frequency
125
250
8
MHz IC =10mA, VCE =5V
f = 100MHz
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
Cebo
Ccbo
N
pF
pF
dB
VEBO=0.5V, f =1MHz
VCBO=10V, f =1MHz
4.5
6
2
IC= 0.2mA, VCE = 5V
RG =2KΩ, f=1KH
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
td
tr
ton
ts
tf
toff
35
50
85
400
80
480
ns
ns
ns
ns
ns
ns
IC:IB1:- IB2 =10:1:1mA
R1=5KΩ, R2=5KΩ
150
800
VBB =3.6V, RL=990Ω
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
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