BCX38A [ZETEX]
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS; NPN硅平面中功率达林顿晶体管
| 型号： | BCX38A |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR MEDIUM
BCX38A/B/C
POWER DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
*
*
*
60 Volt VCEO
Gain of 10K at IC=0.5 Amp
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
80
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
10
V
Peak Pulse Current
2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
800
1
mA
W
°C
Ptot
Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL
V(BR)CBO
MIN.
80
TYP.
MAX.
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=10µA, IE=0
Collector-Emitter
Sustaining Voltage
VCEO(sus) 60
V(BR)EBO 10
ICBO
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
IE=10µA, IC=0
Collector Cut-Off
Current
100
nA
nA
V
VCB=60V, IE=0
VEB=8V, IC=0
Emitter Cut-Off
Current
IEBO
100
1.25
1.8
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(on)
IC=800mA, IB=8mA*
IC=800mA, VCE=5V*
Base-Emitter
Turn-on Voltage
V
Static
BCX38A hFE
500
1000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Forward
Current
Transfer
Ratio
BCX38B
BCX38C
2000
4000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
5000
10000
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
3-20
BCX38A/B/C
TYPICAL CHARACTERISTICS
VCE=5V
IC/IB=100
1.0
0.8
1.6
1.4
1.2
1.0
0.8
+100°C
-55°C
+25°C
+25°C
-55°C
0.6
0.4
0.2
+100°C
0.6
0.4
0.2
0
+175°C
0.001
0.01
10
0.1
1
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
FE
CE(sat)
V
C
v I
C
v I
h
VCE=5V
IC/IB=100
2.0
2.0
1.5
-55°C
-55°C
1.5
1.0
0.5
+25°C
+25°C
+100°C
1.0
0.5
+100°C
+175°C
+175°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(sat) v IC
VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
1
D=1 (D.C.)
150
100
50
D=0.5
D=0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
D=0.1
D=0.05
Single Pulse
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (seconds)
0.01
1
10
100
1000
VCE - Collector Voltage (Volts)
Maximum transient thermal impedance
Safe Operating Area
3-21
BCX38A/B/C
The maximum permissable operational
temperature can be obtained using the
equation:
1.0
0.8
0.6
0.4
Power (max ) −Power (actual )
RS≤10kΩ
RS=47kΩ
RS=1MΩ
T
=
)
+ 25°C
(
0.0057
Tamb(max)= Maximum operating ambient
temperature
Power (max) = Maximum power
dissipation figure, for a given VCE and
source resistance (RS)
RS= ∞
0.2
1
Power (actual) = Actual power dissipation
in users circuit
10
100
VCE - Collector-Emitter Voltage - (V)
3-22
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