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BCP68-25 [ZETEX]

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
BCP68-25
型号： BCP68-25
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN硅平面中功率晶体管

晶体 晶体管 功率双极晶体管 光电二极管 放大器 局域网
文件： 总1页 (文件大小：47K)
中文：  中文翻译
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SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCP68  
ISSUE 3 – FEBRUARY 1996  
✪
FEATURES  
*
*
Suitable for AF drivers and output stages  
High collector current and Low VCE(sat)  
C
COMPLEMENTARY TYPE – BCP69  
E
C
PARTMARKING DETAIL –  
BCP68  
B
BCP68 – 25  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
25  
20  
5
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
1
A
Ptot  
2
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 25  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=10µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
20  
5
IC= 30mA *  
IE=10µA  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
10  
nA  
µA  
V
CB=25V  
VCB=25V, Tamb=150°C  
Emitter Cut-Off Current IEBO  
10  
VEB=5V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.5  
V
IC=1A, IB=100mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
0.6  
V
V
IC=5A, VCE=10V*  
IC=1A, VCE=1V*  
1.0  
Static Forward Current hFE  
Transfer Ratio  
50  
63  
IC=5mA, VCE=10V*  
IC=500mA, VCE=1V*  
IC=500mA, VCE=1V*  
BCP68  
400  
400  
BCP68-25 160  
250  
100  
Transition Frequency  
fT  
MHz  
IC=100mA, VCE=5V,  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical characteristics graphs see FMMT449 datasheet.  
3 - 19  

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