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BCP56-16 [ZETEX]

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
BCP56-16
型号： BCP56-16
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN硅平面中功率晶体管

晶体 晶体管 光电二极管 放大器 局域网
文件： 总1页 (文件大小：46K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCP56  
ISSUE 3 – AUGUST 1995  
✪
FEATURES  
*
*
Suitable for AF drivers and output stages  
High collector current and Low VCE(sat)  
C
COMPLEMENTARY TYPE – BCP53  
E
C
PARTMARKING DETAILS – BCP56  
BCP56 – 10  
B
BCP56 – 16  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
100  
80  
5
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
1.5  
1
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
2
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 100  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=100µA  
IC= 10mA *  
IE=10µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
5
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
20  
nA  
µA  
VCB=30V  
VCB=30V, Tamb=150°C  
Emitter Cut-Off Current IEBO  
10  
VEB=5V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.5  
V
IC=500mA, IB=50mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
1.0  
V
IC=500mA, VCE=2V*  
Static Forward Current hFE  
Transfer Ratio  
40  
25  
250  
IC=150mA, VCE=2V*  
IC=500mA, VCE=2V*  
IC=150mA, VCE=2V*  
IC=150mA, VCE=2V*  
BCP56-10 63  
BCP56-16 100  
100  
160  
160  
250  
Transition Frequency  
fT  
125  
MHz  
IC=50mA, VCE=10V,  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
3 - 18  

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