BC81716 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR; NPN硅平面中功率晶体管
| 型号： | BC81716 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
BC817
ISSUE 5 – MARCH 2001
✪
PARTMARKING DETAILS
BC81716 –
BC81725 –
BC81740 –
6AZ
6BZ
6CZ
E
C
B
COMPLEMENTARY TYPE
– BC807
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
50
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
45
5
1
V
Peak Pulse Current
A
Continuous Collector Current
Base Current
IC
500
mA
mA
mA
mW
°C
IB
100
Peak Base Current
IBM
200
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
0.1
5
VCB=20V, IE=0
CB=20V, IE=0, Tamb=150°C
µA
µA
V
Emitter Cut-Off Current IEBO
10
µA
VEB=5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
700
mV
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(on)
1.2
V
IC=500mA, VCE=1V*
Static Forward Current hFE
Transfer Ratio
BC81716
BC81725
100
160
250
40
250
400
600
IC=100mA, VCE=1V*
IC=100mA, VCE=1V*
IC=100mA, VCE=1V*
IC=500mA, VCE=1V*
BC81740
All bands
Transition Frequency
fT
200
5.0
MHz IC=10mA, VCE=5V
f=35MHz
Output Capacitance
Cobo
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions.
TBA
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