BC807 [ZETEX]
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR; PNP硅平面中功率晶体管
| 型号： | BC807 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BC807
ISSUE 3 – MARCH 2001
PARTMARKING DETAILS
BC80716 –
BC80725 –
BC80740 –
5AZ
5BZ
5CZ
E
C
B
COMPLEMENTARY TYPE
BC817
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-50
UNIT
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-45
-5
V
Peak Pulse Current
-1
A
Continuous Collector Current
Base Current
IC
-500
-100
-200
330
mA
mA
mA
mW
°C
IB
Peak Base Current
IBM
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO
-0.1
-0.5
V
V
CB=-20V, IE=0
CB=-20V, IE=0, Tamb=150°C
µA
Emitter Cut-Off Current IEBO
-10
V
EB=-5V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-700 mV
IC=-500mA, IB=-50mA*
Base-Emitter
Saturation Voltage
VBE(on)
-1.2
V
IC=-500mA, VCE=-1V*
Static Forward Current hFE
Transfer Ratio
BC80716
BC80725
100
160
250
40
250
400
600
IC=-100mA, VCE=-1V*
IC=-100mA, VCE=-1V*
IC=-100mA, VCE=-1V*
IC=-500mA, VCE=-1V*
BC80740
All bands
Transition Frequency
fT
100
8.0
MHz IC=-10mA, VCE=-5V
f=35MHz
Output Capacitance
Cobo
pF
VCB=-10V f=1MHz
*Measured under pulsed conditions.
Spice parameter data is available upon request for these devices
tba
相关型号：
BC807-16
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
INFINEON
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