BAT54C [ZETEX]
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES; 硅外延肖特基势垒二极管
| 型号： | BAT54C |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SILICON EPITAXIAL SCHOTTKY BARRIER DIODES |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 SILICON EPITAXIAL
BAT54 SERIES
SCHOTTKY BARRIER DIODES
✪
ISSUE 1 SEPTEMBER 1995
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BAT54
BAT54A
BAT54S
SERIES
BAT54C
Device Type
SINGLE
COMMON
ANODE
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
FEATURES: Low VF & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
30
UNIT
V
Continuous Reverse Voltage
Forward Current
VR
IF
200
mA
mV
mA
mA
mW
°C
Forward Voltage @ IF =10mA
Repetitive Peak Forward Current
Non Repetitive Forward Current t<1s
Power Dissipation at Tamb=25°C
Storage Temperature Range
VF
400
IFRM
IFSM
Ptot
Tstg
Tj
300
600
330
-55 to +150
125
JunctionTemperature
¤
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
30
50
V
IR=10µA
Forward Voltage
VF
135
200
280
350
530
240
320
400
500
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
1000 mV
Reverse Current
IR
2.5
7.5
4
VR=25V
µA
pF
ns
Diode Capacitance
CD
trr
10
5
f=1MHz,VR=1V
Reverse Recover
Time
switched from
IF=10mA to IR=10mA
RL=100Ω, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3 - 4
BAT54 SERIES
TYPICAL CHARACTERISTICS
µ
µ
µ
µ
µ
Forward Voltage VF (V)
Reverse Voltage VR (V)
IR v VR Characteristics
IF v VF Characteristics
Reverse Voltage VR (V)
CT v VR Characteristics
TA - Ambient Temperature ( °C)
PD v TA Characteristics
3 - 5
相关型号：
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