497 [ZETEX]
SOT23 NPN silicon planar high voltage high performance transistor; SOT23 NPN硅平面高电压高性能晶体管
| 型号： | 497 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | SOT23 NPN silicon planar high voltage high performance transistor |
| 文件： | 总6页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMMT497
SOT23 NPN silicon planar high voltage high
performance transistor
Complementary part number - FMMT597
Device marking - 497
C
E
B
E
B
C
Pinout - top view
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Collector-base voltage
V
V
V
300
V
CBO
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
300
V
V
5
500
I
mA
A
C
I
1
CM
Base current
I
200
mA
mW
°C
B
Power dissipation at T
=25°C
P
500
amb
tot
Operating and storage temperature range
T :T
-55 to +150
j
stg
Issue 4 - November 2006
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FMMT497
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min. Typ.
Max Unit Conditions
.
Collector-base
breakdown voltage
V
V
V
300
300
5
V
V
V
I = 100ꢀA
C
(BR)CBO
CEO(sus)
(BR)EBO
(*)
Collector-emitter
breakdown voltage
I = 10mA
C
Emitter-base
I = 100ꢀA
E
breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
I
I
100
100
100
nA
nA
nA
V
V
V
= 250V
CB
CBO
CES
EBO
= 250V
CES
= 4V
EB
Collector-emitter
saturation voltage
V
0.2
0.3
V
V
I = 100mA, I = 10mA
C B
CE(sat)
I = 250mA, I = 25mA
C
B
Base-emitter
saturation voltage
V
V
1.0
1.0
V
V
I = 250mA, I = 25mA
C B
BE(sat)
BE(on)
FE
Base-emitter
turn on voltage
I = 250mA, V = 10V
C CE
Static forward current
transfer ratio
h
100
80
20
I = 1mA, V = 10V
C CE
300
(*)
(*)
I = 100mA, V = 10V
C
CE
I = 250mA, V = 10V
C
CE
Transition frequency
f
75
MHz I = 50mA, V = 10V
T
C
CE
f = 100MHz
output capacitance
C
5
pF
V
= 10V, f = 1MHz
obo
CB
Switching performance
td
tr
ts
tf
53
ns
ns
ꢀs
ns
V
= 100V, I = 100mA,
C
CC
Ib1 = -Ib2 = 10mA
126
2.58
228
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300ꢀs. Duty cycle ꢁ2%.
Issue 4 - November 2006
© Zetex Semiconductors plc 2006
2
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FMMT497
Typical characteristics
0.6
0.6
0.5
0.4
0.3
0.2
0.1
0
+25 ° C
IC/IB=10
0.5
0.4
-55 °C
+25 °C
+100 °C
I
I
C
/I
B
=10
=50
C/I
B
0.3
0.2
0.1
0
10mA
100mA
1A
1A
1A
10mA
100mA
1A
1mA
1mA
I
C
-Collector Current
I
C
-Collector Current
V
CE(sat) v I
C
V
CE(sat) v I
C
400
300
200
100
0
V
CE=10V
IC/IB=10
0.9
0.8
+100 °C
0.6
0.4
0.2
0
+25 °C
-55 °C
-55 °C
+25 °C
+100 °C
1mA
10mA
100mA
1A
10mA
100mA
1mA
I
C
-Collector Current
C
I -Collector Current
h
FE V I
C
V
BE(sat) v IC
1
VCE=10V
0.9
0.8
0.1
0.01
0.6
0.4
0.2
0
DC
1s
-55 °C
+25 °C
+100 °C
100ms
10ms
1ms
100µs
0.001
1mA
10mA
100mA
0.1
1
10
100
1000
C
I -Collector Current
V
CE - Collector Emitter Voltage (V)
V
BE(on) v I
C
Safe Operating Area
Issue 4 - November 2006
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FMMT497
Package outline - SOT23
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Min. Max.
Inches
Dim.
Millimeters
Min. Max.
1.90 NOM
Inches
Min.
-
Max.
0.044
0.004
0.020
0.008
0.120
Max.
Max.
A
A1
b
-
1.12
0.10
0.50
0.120
3.04
e1
E
0.075 NOM
0.01
0.30
0.085
2.80
0.0004
0.012
0.003
0.110
2.10
2.64
1.40
0.62
0.62
-
0.083
0.047
0.018
0.018
-
0.104
0.055
0.024
0.024
-
E1
L
1.20
0.25
0.45
-
C
D
L1
-
e
0.95 NOM
0.0375 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 4 - November 2006
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FMMT497
Intentionally left blank
Issue 4 - November 2006
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FMMT497
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Future device intended for production at some point. Samples may be available
Product status recommended for new designs
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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© 2006 Published by Zetex Semiconductors plc
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