SL2150LH2S [ZARLINK]
Front End Power Splitter with AGC; 前端功分器，带有AGC
| 型号： | SL2150LH2S |
| 厂家： | 
ZARLINK SEMICONDUCTOR INC |
| 描述： | Front End Power Splitter with AGC |
| 文件： | 总20页 (文件大小：933K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SL2150F
Front End Power Splitter with AGC
Data Sheet
DS5535
Issue 2.1
April 2002
Features
•
Single chip quadruple power splitter (primary
Ordering Information
channel, secondary channel, OOB channel and
loop through)
SL2150F/KG/LH2S (tubes)
•
•
•
•
Wide dynamic range on all channels
Independent AGC facility incorporated into all
channel paths
SL2150F/KG/LH2T (tape and reel)
CSO, CTB, CXM all better than -62dBc for
Description
+3dBmV agc attack point
Full ESD protection. (Normal ESD handling
procedures should be observed)
The SL2150F is a wide dynamic range single chip power
splitter for cable set top box multi-tuner applications.
•
The device offers four buffered outputs from a single
input.
Applications
All signal paths contain an independently controllable
AGC facility.
•
Multi-tuner cable set top box and cable modem
applications
•
•
Data communications systems
Terrestrial TV tuner loop though
AGC1
AGC2
AGC3
AGC4
RFOUT1
RFOUT1B
AGC
Control
RFOUT2
AGC
Control
RFOUT2B
RFINPUT
RFINPUTB
Power
Splitter
RFOUT3
AGC
Control
RFOUT3B
RFOUT4
RFOUT4B
AGC
Control
Figure 1 - SL2150F Block Diagram
SEMICMF.019
1
SL2150F
Data Sheet
Vee
Vee
Vee
Vee
RFOUT4
RFOUT4B
Vcc
RFOUT3
RFOUT3B
NC#
SL2150F
AGC4
AGC3
Vcc
Vcc
1
VEE
(PACKAGE
PADDLE)
LH28
# Pins marked NC should be connected to Vee
Figure 2 - Pin Allocation
1.0
Quick Reference Data
NB all data applies with differential termination and single ended source both of 75Ω.
Characteristics
Units
RF input operating range
50-860
MHz
Conversion gain, with external load as in Figure 12
maximum
minimum
5.5
-25
dB
dB
Input NF, all signal paths at maximum conversion gain
7
dB
dBµV
dBµV
dBc
dBc
dBc
Ω
IPIP3, all paths
IPIP2, all paths
CTB*
127
151
-66
-64
-66
75
CSO*
CXM*
Input impedance
Input VSWR
8
dB
Output impedance differential, all loops (requires external load for example
as in Figure 12)
440
Ω
Input to output isolation (all loops)
Output to output isolation (all loops)
30
25
dB
dB
Table 1 - Quick Reference Data
*132 channel matrix at +15 dBmV per channel, 75 Ω source impedance, all paths, max gain.
SEMICMF.019
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Data Sheet
SL2150F
2.0
Functional Description
The SL2150F is a broadband wide dynamic range power splitter with AGC and is optimized for application in multi
tuner cable set top box applications. It also has application in any system where a wide dynamic range broadband
power splitter is required.
The pin assignment is contained in Figure 2 and the block diagram in Figure 1. The port internal peripheral circuits
are contained in Figure 15 - "Port Peripheral Circuitry".
In normal application the RF input is interfaced to the device input. The input preamplifier is designed for low noise
figure, within the operating region of 50 to 860 MHz and for high intermodulation distortion intercept so offering good
signal to noise plus composite distortion spurious performance when loaded with a multi carrier system. The
preamplifier when combined with the input network shown in Figure 3 - "RF Input Matching Network" provides an
impedance match to a 75Ω source. The typical impedance is shown in Figure 4 - "Typical Single-Ended RF Input
Impedance with Input Match".
The input NF and input referred two-tone intermodulation test condition spectrum are shown in Figure 5 - "Input NF
at 25 deg C" and Figure 6 - "Two Tone Intermodulation Test Condition Spectrum, Input Referred" respectively.
The output of the preamplifier is then power split to four independently controlled AGC stages.
Each AGC stage provides for a minimum of 30 dB of gain control across the input frequency range. The typical
AGC characteristic and NF versus gain setting are contained in Figure 7 - "Typical AGC versus Control Voltage
Characteristic" and Figure 8 - "Typical Variation in NF versus Gain Setting" respectively.
The input referred third order intercept point is independent of gain setting.
Finally, each of the AGC stages drive an output buffer of nominal differential output impedance of 440Ω, which
provides a nominal 5.5 dB of conversion gain when terminated into a differential 75Ω load.
In application it is important to avoid saturation of the output stage, therefore it is recommended that the output
standing current be sunk to Vcc through an inductor. A resistive pull up can also be used as shown in Figure 14 -
"Example Application Driving 200 Ohm Load with Resistive Pull Up", however the resistor values should not exceed
38 ohm single ended.
If an inductive current sink is used the maximum available gain from the device is circa 20 dB. This gain can be
reduced by application of an external load between the differential output ports. The gain can be approximately
calculated from the following formula:
GAIN = 20*log ((Parallel combination of 440 ohm and external load between ports) / 44 ohm) + 2dB
For example, when driving a 200 ohm load as in Figure 13 - "Example Application Driving 200 Ohm Load with
Inductive Pull Up", the gain equals
Gain = 20 *log ((440 * 200)/(440+200)/44) +2dB
= 12dB.
SEMICMF.019
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SL2150F
Data Sheet
3
4
1nF
1nF
RF INPUT
SL2150F
RFIN
F TYPE
RF INPUTB
5.1nH
MABAES0029
1:1
Figure 3 - RF Input Matching Network
CH1
S
1 U FS
4_: 133.23
Ω
55.758
Ω
10.44 nH
11
850.000 000 MHz
1_: 169.02
-44.117
50 MHz
Ω
Ω
Z
0
2_: 49.916
-57.436
250 MHz
Ω
Ω
Ω
75
3_: 31.238
-5.5576
500 MHz
Ω
Ω
4
3
1
2
START 50.000 000 MHz
STOP 850.000 000 MHz
Figure 4 - Typical Single-Ended RF Input Impedance with Input Match
SEMICMF.019
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Data Sheet
SL2150F
Input NF vs Frequency at 25 deg C (with matching network)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
100
200
300
400
500
600
700
800
900
Frequency (MHz)
Figure 5 - Input NF at 25 deg C
-15dBm
-72 dBm
-81 dBm
df
f1-df
f1
f2 f2+df
f2-f1
Figure 6 - Two Tone Intermodulation Test Condition Spectrum, Input Referred
SEMICMF.019
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SL2150F
Data Sheet
Typical Variation in Noise Figure vs. Gain Setting
0.5 1.5 2.5
0
1
2
3
0
-10
-20
-30
-40
-50
-60
-70
AGC Input Voltage (V)
Figure 7 - Typical AGC versus Control Voltage Characteristic
Typical Variation in NF vs. Gain Setting (with Matching Network)
50.0
40.0
30.0
20.0
10.0
0.0
-
-40.0
-35.5
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
Gain (dB)
Figure 8 - Typical Variation in NF versus Gain Setting
SEMICMF.019
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Data Sheet
SL2150F
132 channel matrix 75 Ohm source, all channels at +15dbmV. Input and output conditions as in Figure 3 - "RF Input Matching Network"
and Figure 12 - "Example Application Driving 75 Ohm Load"
-50
-55
-60
CSO (dBc)
CTB (dBc)
-65
-70
-75
--80
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
-0
Back off from maximum gain (dB)
Figure 9 - Typical Variation in CSO and CTB versus Back Off from Maximum Gain
Driven
output
stage
50 Ω
A
C
D
Directional
coupler
Port 1
B
Network
Analyzer
Monitored
output
stage
A
C
Port 2
Directional
coupler
D
B
50 Ω
Directional coupler
phase relationship
A
B
0
0
C
0
D 180
Figure 10 - Test Condition for Output Crosstalk
SEMICMF.019
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SL2150F
Data Sheet
Driven
output
stage
50 Ω
A
C
D
Directional
coupler
Port 1
B
Network
Analyzer
Monitored
input
stage
Port 2
Directional coupler
phase relationship
A
B
0
0
C
0
D 180
Figure 11 - Test Condition for Output to Input Crosstalk
Vcc
100nF
100pF
To 75Ω load
MABAES0029
1:1
SL2150F
1nF
FTYPE
Figure 12 - Example Application Driving 75 Ohm Load
Vcc
10µH
10µH
1nF
SL2150F
200 Ω
1nF
Figure 13 - Example Application Driving 200 Ohm Load with Inductive Pull Up
SEMICMF.019
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Data Sheet
SL2150F
Vcc
2x
38 Ω
1nF
1nF
SL2150F
200 Ω
Note: External resistor
values must not exceed 38Ω
Figure 14 - Example Application Driving 200 Ohm Load with Resistive Pull Up
Vcc
INPUT
DECOUPLED
INPUT
1 k
Ω
220
Ω
220 Ω
2.5V
2.5V
Output
270
Ω
3.9V
1 k
Ω
16 mA
16 mA
Output Ports
1.6V
RF Input Port
30 k
Ω
AGC
INPUT
1.5k
Ω
AGC Port
Figure 15 - Port Peripheral Circuitry
SEMICMF.019
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SL2150F
Data Sheet
3.0
Electrical Characteristics
Test conditions (unless otherwise stated)
T amb = -40o to 85o C, Vee=0V, Vcc=5V+-5%.
These characteristics are guaranteed by either production test or design. They apply within the specified ambient
temperature and supply voltage unless otherwise stated.
Electrical Characteristics
Characteristic
pin
min
typ
max
units
Conditions
Supply current
190
228
860
mA
Input frequency
range
50
MHz
Input impedance
Input return loss
3, 4
75
8
Ω
See Figure 4
dB
dB
Input Noise
Figure
8
Tamb=270C,
see Figure 8
All loops at maximum
conversion gain
Variation in NF
with gain adjust
-1
dB/dB
See Figure 4
Gain
Power gain from 75 Ω
single ended source to
differential 75 Ω load.
maximum
minimum
minimum
4
5.5
-65
7
dB
dB
dB
Vagcip=3.0V
-25
Vagcip=0.5V
Vagcip=Vee
AGC monotonic from Vee to
Vcc.
Refer to Functional
description section for
information on calculating
maximum gain with other
load conditions
Input referred IP2
Input referred IP3
Input referred IM2
42
18
dBm
dBm
Assuming ideal power
match. See note 2 and
Figure 6.
Assuming ideal power
match. See note 2 and
Figure 6.
-57
-37
dBc
dBc
See note 2 and Figure 6.
See note 3 and Figure 6.
SEMICMF.019
10
Data Sheet
Electrical Characteristics (continued)
SL2150F
Characteristic
pin
min
typ
max
units
Conditions
Input referred IM3
-66
-46
dBc
dBc
See note 2 and Figure 6.
See note 3 and Figure 6.
All gain settings
CSO
-62
-64
-64
dBc
dBc
dBc
dBm
See note 4 and Figure 9.
See note 4.
CTB
CXM
See note 4.
Input P1dB
+4.5
0.25
440
All gain settings, with load
as in Figure 12 - "Example
Application Driving 75 Ohm
Load"
Gain variation
within channel
dB
Ω
Channel bandwidth 8 MHz
within operating frequency
range, all loops, all gain
settings
Output
11,12,
15,16
20,21
24,25
Differential
impedance
Output port DC
standing current
11,12,
15,16
20,21
24,25
25
mA
Standing current that any
external load has to sustain.
AGC input
6,7
8,9
-150
150
-25
µA
Vagcip =Vee to Vcc, all
control inputs.
leakage current
Crosstalk
dB
All gain settings, measured
differential output to
differential output, driven
ports in phase and
between all loop
outputs
monitored ports out of
phase, see Figure 10 - "Test
Condition for Output
Crosstalk".
Crosstalk
-30
dB
All gain settings, measured
differential output to single
ended input, driven ports in
phase, see Figure 11 - "Test
Condition for Output to Input
Crosstalk"
between outputs
and RF input
Note 1: All power levels are referred to 75Ω and 0 dBm = 109 dBµV.
Note 2: Any two tones within RF operating range at -15 dBm, from single-ended 75 ohm source into differential 75Ω load as in
Figure 12 - "Example Application Driving 75 Ohm Load", gain setting between maximum and -15dB backoff.
Note 3: Any two tones within RF operating range at -5 dBm, from single-ended 75 ohm source into differential 75Ω load as in Figure
12 - "Example Application Driving 75 Ohm Load".
Note 4: Load as in Figure 12 - "Example Application Driving 75 Ohm Load" and Figure 13 - "Example Application Driving 200 Ohm
Load with Inductive Pull Up", max gain, 132 channel matrix, 75 ohm source with all channels at +15 dBmV, assuming power
match.
SEMICMF.019
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SL2150F
Data Sheet
Absolute Maximum Ratings All voltages are referred to Vee at 0V
Characteristic
Supply voltage
min
max
units
Conditions
-0.3
6
8
V
dBm
V
oC
oC
RF input voltage
Differential
All I/O port DC offsets
Storage temperature
Junction temperature
-0.3
-55
Vcc+0.3
150
125
35
Power applied
Package thermal resistance, chip to
ambient
oC/W Paddle to be soldered to
ground plane
Power consumption at 5.25V
ESD protection
1200
mW
1.5
kV
Mil-std 883B method 3015 cat1
SEMICMF.019
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Data Sheet
SL2150F
4.0
SL2150F Demonstration Board
The SL2150F demonstration board is designed to allow testing of device functionality as a stand alone power
splitter. It allows for testing of the AGC function and independent testing of all channels.
The SL2150F is designed to interface differentially into a silicon tuner such as the SL2101 with simple inductive or
resistive pull-ups. However, to facilitate testing the differential, output is converted to a single ended signal through
a balun. The differential conversion is necessary for achieving second order performance.
All outputs require a DC return path to Vcc to prevent output saturation. This can be provided by the balun, inductive
pull up or resistive pull up. In the case of a resistive pull up, the maximum load value is 38 Ω.
The balun also provides the DC bias to the outputs; all outputs have to be DC 'shorted' to Vcc to prevent saturation
of the output stages.
All input and output terminations are 75 Ω.
The board schematic and layout are contained in Figure 19 - "Test Board Schematic" and Figure 20 - "Test Board
Layout" respectively.
Operation note
The supply voltage must be connected and enabled before any AGC voltage is applied unless the AGC
supplies are current limited to <1 mA or else permanent damage may occur through the ESD structures on
the device.
4.1
Pin Connections
All references are with the board oriented as in bottom view on Figure 1 - "SL2150F Block Diagram". Pin 1 of the
header is defined as the left-hand pin.
4.2
Power Supply
A single 5V supply is required. Power is supplied through the two-pin header PL1, located top right hand corner.
Pin
Function
1
2
Vcc
Vee
4.3
The RF input F type, SK1, is located on the right hand side of the board.
4.4 RF Outputs
RF Input
Output 1 is the upper of the two F type connectors, SK3, located on the left-hand side.
Output 2 is the lower of the two F type connector, SK4, located on the left-hand side.
Output 3 is the F type connector, SK5, located at the bottom of the board
Output 4 is the F type connector, SK2, located at the top of the board.
SEMICMF.019
13
SL2150F
Data Sheet
4.5
AGC Control
All AGCs are connected through the 5-pin header, PL2, located in the bottom right hand corner. See note on
connection of supplies in the power supply section.
Pin allocation is as follows:
Pin
Function
1
2
3
4
5
Vagc1
Vagc 2
Vagc 3
Vagc 4
Vee
AGC control voltage is Vee to 3V for minimum to maximum gain setting.
4.6
Test Procedure
CSO
4.6.1
CSO is tested using an RDL matrix generator set to deliver all channels from 55.25 MHz to 859.25 MHz at 15 dBmV
per carrier.
Each output is tested independently over maximum gain setting through 15 dB of gain reduction.
The output intermodulation is monitored on a spectrum analyzer with video bandwidth of 1 kHz and resolution
bandwidth of 10 kHz. To avoid intermodulation in the test set up the output channel is filtered through a narrow band
filter and then amplified to compensate for insertion loss. The higher of all CSO beats is recorded.
Under gain reduction the amplitude is normalized to channel 2 output at the required AGC onset
4.6.2
CTB
CTB is tested using an RDL matrix generator set to deliver all channels from 55.25 MHz to 859.25 MHz at 15 dBmV
per carrier.
Each output is tested independently over maximum gain setting through 15 dB of gain reduction.
The output intermodulation is monitored on a spectrum analyzer with video bandwidth of 1 kHz and resolution
bandwidth of 10 kHz. To minimize intermodulation in the test set up the output channel is filtered through a narrow
band filter and then amplified to compensate for insertion loss.
CTB is measured with N+-1 also disabled since these channels were found to produce intermodulation in the filter
and the post amplifier.
Under gain reduction the amplitude is normalized to channel 2 output at the required AGC onset.
4.6.3
CXM
CTB is tested using an RDL matrix generator set to deliver all channels from 55.25 MHz to 859.25 MHz at 15 dBmV
per carrier with 100% modulation at line rate.
Each output is tested independently over maximum gain setting through 15 dB of gain reduction.
SEMICMF.019
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Data Sheet
SL2150F
To minimize crossmodulation in the test set up the output channel is filtered through a narrow band filter and then
amplified to compensate for insertion loss. The amplifier output is then demodulated on a first spectrum analyzer
set to linear mode with maximum resolution and video bandwidth. The video out of the first spectrum analyzer,
which will be the demodulated AM on the carrier, is connected to a second spectrum analyzer centred on line rate
frequency with video averaging enabled. The cross modulation can then be monitored on the second spectrum
analyzer.
The CXM is measured with modulation disabled on N+-1 since these channels were found to produce
crossmodulation in the filter and the post amplifier.
Under gain reduction the amplitude is normalized to channel 2 output at the required AGC onset.
4.6.4
Gain is measured using a network analyzer with 50/75 Ω pads to ensure correct source and load impedance.
4.6.5 AGC
Output amplitude at a given channel is measured on a spectrum analyzer with all AGC settings from 0V to Vcc.
4.6.6 S11
Gain
S11 is measured at the test board RF input F type connector, using a network analyzer calibrated to 75Ω F type
connector.
4.6.7
S22
S22 is not measured since the device is not designed to be impedance matched on its output. Rather the output
load is used as the terminating impedance for the device.
4.6.8
NF
NF is measured using a NF meter with a 50/75Ω pad on the input.
4.7
Typical performance characteristics
9
8
7
6
5
4
3
2
1
0
NF
gain
0
100
200
300
400
500
600
700
800
900
Input frequency
Figure 16 - SL2150F NF and Gain at Maximum Gain Setting
SEMICMF.019
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SL2150F
Data Sheet
-64
-16
-14
-12
-10
-8
-6
-4
-2
0
-64.5
-65
op4-Balun
op1-Balun
op2-Balun
op3-Balun
-65.5
-66
-66.5
-67
-67.5
-68
-68.5
-69
Gain back off (in dB)
Figure 17 - SL2150F CTB at 505.25 MHz Measured with 15dBmV per Carrier
-62
-16
-14
-12
-10
-8
-6
-4
-2
0
-64
-66
-68
-70
-72
-74
-76
op4-Balun
op1-Balun
op2-Balun
op3-Balun
Gain back off (in dB)
Figure 18 - SL2150F CSO at 859.25 MHz Measured with 15 dBmV per Carrier
SEMICMF.019
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Data Sheet
SL2150F
4.8
Evaluation Board
Figure 19 - "Test Board Schematic" and Figure 20 - "Test Board Layout" show schematic and PCB layout for a
4 layer evaluation board.
e
e
V e
V e
e
e
V e
V e
R F O U T 3
R F O U T 3 B
V e
A G C 4
A G C 3
8
2 2
2 3
2 4
2 5
2 6
2 7
2 8
1 4
1 3
1 2
1 1
1 0
R F O U T 4
R F O U T 4 B
V c c
V c c
V c c
e
9
1
2
Figure 19 - Test Board Schematic
SEMICMF.019
17
SL2150F
Data Sheet
Top
LHS
RHS
Bottom
Top View
Bottom View
Figure 20 - Test Board Layout
SEMICMF.019
18
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