ABS302 [YIXIN]
Single Phase 2.0 AMP. Glass Passivated Bridge Rectifiers;
| 型号： | ABS302 |
| 厂家： | 
YiXin |
| 描述： | Single Phase 2.0 AMP. Glass Passivated Bridge Rectifiers |
| 文件： | 总2页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ABS302THRU ABS310
Single Phase 2.0 AMP. Glass Passivated Bridge Rectifiers
VOLTAGE RANGE
Thin Mini-Dip
200 to 1000 Volts
CURRENT
2.0 Ampere
Features
ABS
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
0.059(1.5)
0.008(0.2)
0.174(4.4)
0.150(3.8)
-----
DETAIL "A", SCALE=20/1
0.21(5.4)
0.193(4.9)
A
0.033(0.85)
0.022(0.55)
High surge current capability
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Units
Type Number
ABS302 ABS304
ABS306 ABS308
ABS310
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B.
A
I(AV)
3.0
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
48
A
IFSM
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage
0.95
V
VF
IR
5
uA
Typical Thermal resistance Junction to Lead
On aluminum substrate
18
57.5
80
Rθ
℃/W
JL
Rθ
JA
On Glass-Epoxy substrate
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
-55 to +150
℃
℃
-55 to +150
m
m
RATINGS AND CHARACTERISTIC CURVES ( ABS302 THRU ABS310
)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
100
ALUMINA SUBSTRATE
50.8mm X 50.8mm
SIN
10
SOLDERING LAND 1mm X 1mm
CONDUCTOR LAYER 20 mm
SUBSTRATE THICKNESS 0.64mm
Tj=1000C
Tj=750C
1
0.1
Tj=250C
0
80
20
40
60
100
120
140
160
AMBIENT TEMPERATURE. (OC)
0.01
0
20
40
60
80
100
120
140
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
56
48
40
32
24
16
8
FIG.4- TYPICAL JUNCTION CAPACITANCE
1000
600
500
400
300
200
100
0
IFSM
Tj=250C
10ms
10ms
1 Cycle
NON-REPETITIVE,
SINE WAVE,
Tj = 25OC BEFORE
SURGE CURRENT IS APPLIED
0
10
NUMBER OF CYCLES (CYCLE)
100
1
200
0.5
2
10
50 100
500 800
1
5
0.1
20
REVERSE VOLTAGE. (V)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
50
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
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