CS7N65A [YFW]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET;型号: | CS7N65A |
厂家: | DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总6页 (文件大小:933K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
N-CHANNEL MOSFET CS7N65A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MAIN CHARACTERISTICS
ID
VDSS
7A
650V
1.06Ω
RDSON-typ(@VGS=10V)
FEATURES
Fast Switching
Low ON Resistance
Low Gate Charge
100% Single Pulse avalanche energy Test
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: Molded plastic
Mounting Position: Any
Molded Plastic: UL Flammability Classification Rating 94V-0
Solder bath temperature275℃maximum,10s per JESD22-106
Case: TO-220AB TO-220F TO-263 TO-252 TO-251
PRODUCT SPECIFICATION CLASSIFICATION
Part Number
Package
TO-220AB
TO-220F(0.5mm)
TO-263
Mode Name
Pack
Tube
Tube
Tube
Tape
Tube
Tape
CS7N65A1
CS7N65A
CS7N65A
CS7N65A
CS7N65A
CS7N65A
CS7N65A
CS7N65A2
CS7N65A3
CS7N65A3-R
CS7N65A4
TO-263
TO-251
CS7N65A5-R
TO-252
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N-CHANNEL MOSFET CS7N65A
Maximum Ratings at Tc=25°C unless otherwise specified
Value
Characteristics
Symbols
Units
220AB/263
220F
650
251/252
Drain-Source Voltage
Gate-Source Voltage
Continue Drain Current
VDS
VGS
ID
V
V
±30
7
A
Pulsed Drain Current (Note1)
Power Dissipation
28
I
DM
A
100
35
100
P
D
W
Single Pulse Avalanche Energy (Note1)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
350
E
AS
mJ
°C
150
T
J
-55 to +150
3.57
62.5
T
STG
°C
1.25
62.5
1.25
100
R
θJC
θJA
°C/W
°C/W
Thermal Resistance, Junction to Ambient
R
Note1:Pulse test: 300 μs pulse width, 2 % duty cycle
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Leakage Current
Test Condition
VGS = 0 V,ID = 250 μA
VDS = 650 V, VGS = 0 V
VGS = ± 30 V, VDS = 0 V
VDS = VGS , ID = 250 μA
VGS = 10 V, ID = 3.5 A
VDS = 15 V, ID = 3.5 A
Symbols
BVDSS
IDSS
Min
Typ
680
-
Max
Units
V
650
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
1
UA
nA
V
-
±100
IGSS
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
-
4
VGS(th)
RDS(on)
gfs
1.06
6.5
1334
92
5
1.4
Ω
-
-
-
-
-
-
-
-
-
-
-
S
Ciss
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
VGS = 0 V, VDS = 2 V,
f = 200 KHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-on Delay Time(Note2)
Rise Time(Note2)
Crss
18
19
39
18
23
5
td(ON)
tr
ID = 7 A, VDD = 325 V,
RG= 10Ω
Turn-Off Delay Time(Note2)
Fall Time(Note2)
td(OFF)
tf
Total Gate Charge(Note2)
Gate to Source Charge(Note2)
Gate to Drain Charge(Note2)
QG
ID = 7 A, VDD = 520 V,
VGS = 10 V
QGS
9
QGD
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics
Test Condition
Symbols
Min
Typ
Max
Units
A
Maximun Body-Diode Continuous Current
-
-
-
-
-
-
-
7
28
1.4
-
IS
Tj=25°C
Maximun Body-Diode Pulsed
Current(Note2)
ISM
A
Drain-Source Diode Forward Voltage
Reverse Recovery Time(Note2)
Reverse Recovery Charge(Note2)
ISD = 7 A
-
VSD
trr
V
370
1.9
nS
uC
ISD = 7 A, VGS = 0 V,
dIF / dt = 100 A/μs
-
Qrr
Note2:Pulse test: 300 μs pulse width, 2 % duty cycle
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N-CHANNEL MOSFET CS7N65A
RATINGS AND CHARACTERISTIC CURVES
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N-CHANNEL MOSFET CS7N65A
Package Outline Dimensions millimeters
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N-CHANNEL MOSFET CS7N65A
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N-CHANNEL MOSFET CS7N65A
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