SF54G [YEASHIN]
SUPE RFAST RECOVERY RECTIFIERS VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes; SUPE RFAST恢复整流器电压 - 50 〜8 00伏特电流 - 5.0安培
| 型号： | SF54G |
| 厂家： | 
Yea Shin Technology Co., Ltd |
| 描述： | SUPE RFAST RECOVERY RECTIFIERS VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SF51G~SF58G
SEMICONDUCTOR
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE- 50 to 800 Volts CURRENT - 5.0 Amperes
FEATURES
• Superfast recovery times-epitaxial construction.
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
DO-201AD Unit:inch(mm)
.210 (5.3)
.188 (4.8)
• Low leakage.
1.0 (25.4)
MIN.
• High surge capability.
DIA.
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
.375 (9.5)
.285 (7.2)
°C
• High temperature soldering : 260 /10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
1.0 (25.4)
MIN.
.052 (1.3)
.048 (1.2)
DIA.
• Case: Molded plastic, DO-201AD
• Terminals: Axial leads, solderable to MIL-STD-202,Method 208
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.04 ounce, 1.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
SF51G
50
SF52G
100
SF53G
150
SF54G
SF55G
300
SF56G
400
SF57G
600
SF58G UNITS
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
200
140
200
800
640
800
35
70
105
210
320
420
Maximum DC Blocking Voltage
50
100
150
300
400
600
Maximum Average Forward Current .375"(9.5mm)
lead length at TA=55°C J
5.0
A
A
Peak Forward Surge Current, IFM (surge):8.3ms single
halfsine-wave superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage
Maximum DC Reverse Current at Rated DC Blocking Voltage
TA=125°C
150.0
0.95
1.25
1.70
V
5.0
µA
300
µA
Maximum Reverse Recovery Time(Note 1)
Typical Junction capacitance (Note 2)
35.0
45
nS
pF
Typical Junction Resistance(Note 3) RθJA
Operating and Storage Temperature Range TJ
25
°C/W
°C
-55 to +150
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
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1
REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF51G~SF58G8
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
Ω
10Ω
NONINDUCTIVE
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
6
5
4
3
(
)
(+)
0
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
-0.25A
Single Phase
(
)
(+)
Half Wave 60Hz
1Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
Resistive Or Inductive Load
2
0.375"(9.5mm) Lead Length
1
0
-1.0A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
1cm
0
25
50
75
100
125
150
175
SET TIME BASE FOR
AMBIENT TEMPERATURE,( C)
50 / 10ns / cm
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
50
10
3.0
1.0
10
3.0
1.0
Tj=100 C
Tj=25 C
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
0.1
.01
.4
.6
.8 1.0 1.2 1.4 1.6 1.8
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FORWARD VOLTAGE,(V)
FIG.6-TYPICAL JUNCTION CAPACITANCE
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
150
120
90
60
30
0
150
125
100
8.3ms Single Half
Tj=25 C
75
50
25
0
Sine Wave
JEDEC method
.01
.05
.1
.5
1
5
10
50
100
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
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2
REV.02 20110725
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