5962-9086908MYX [XICOR]
EEPROM, 64KX8, 120ns, Parallel, CMOS, 0.560 X 0.458 INCH, 0.120 INCH HEIGHT, LCC-32;
| 型号： | 5962-9086908MYX |
| 厂家： | 
XICOR INC. |
| 描述： | EEPROM, 64KX8, 120ns, Parallel, CMOS, 0.560 X 0.458 INCH, 0.120 INCH HEIGHT, LCC-32 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
| 文件： | 总36页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVISIONS
LTR
A
DESCRIPTION
DATE (YR-MO-DA)
92-01-22
APPROVED
Changes in accordance with NOR 5962-R114-92. glg
Changes in accordance with NOR 5962-R160-98. glg
Boilerplate update and part of five year review. tcr
Michael A. Frye
B
C
98-08-06
07-04-13
Raymond Monnin
Robert M. Heber
THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED.
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PMIC N/A
PREPARED BY
Kenneth Rice
DEFENSE SUPPLY CENTER COLUMBUS
STANDARD
MICROCIRCUIT
DRAWING
CHECKED BY
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
Charles Reusing
APPROVED BY
Michael A. Frye
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
MICROCIRCUIT, MEMORY, DIGITAL, CMOS
64K x 8 ELECTRICALLY ERASABLE PROGRAMMABLE
READ ONLY MEMORY (EEPROM), MONOLITHIC
SILICON
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DRAWING APPROVAL DATE
91-10-18
AMSC N/A
REVISION LEVEL
C
SIZE
A
CAGE CODE
5962-90869
67268
SHEET
1 OF 34
DSCC FORM 2233
APR 97
5962-E079-07
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
90869
01
M
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number Circuit function
Access time
Write speed
Write mode
Endurance
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
28C512
"
"
"
"
"
"
"
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
64K x 8 EEPROM
250 ns
250 ns
200 ns
200 ns
150 ns
150 ns
120 ns
120 ns
250 ns
250 ns
200 ns
200 ns
150 ns
150 ns
120 ns
120 ns
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
10 ms
5 ms
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
Byte/Page
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
10,000 cycle
28C513
"
"
"
"
"
"
"
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
2
DSCC FORM 2234
APR 97
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
See figure 1 (1.685" x .600" x .225")
C-12 (.560" x .458" x .120")
See figure 1 (.830" x .416" x .120")
See figure 1 (.760" x .760" x .120"
Terminals
Package style
X
Y
Z
U
32
32
32
36
dual in-line package
rectangular chip carrier package
flat package
pin grid array
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/ 2/
Supply voltage range (V ) ............................................................................... -0.5 V dc to +6.0 V dc 3/
CC
Operating case temperature range .................................................................... -55°C to +125°C
Storage temperature range................................................................................. -65°C to +150°C
Lead temperature (soldering, 10 seconds) ......................................................... +300°C
Thermal resistance, junction-to-case (θ ):
JC
Case X.............................................................................................................. 28°C/W 4/
Case Y ........................................................................................................... See MIL-STD-1835
Case Z ........................................................................................................... 22°C/W 4/
Case U ........................................................................................................... 20°C/W 4/
Maximum power dissipation (P ) ...................................................................... 1.0 watts
D
Junction temperature (T ) ................................................................................ +175°C 5/
J
Endurance........................................................................................................... 10,000 cycles/byte (minimum)
Data retention ..................................................................................................... 10 years minimum
1.4 Recommended operating conditions.
Supply voltage range (V ) ............................................................................. 4.5 V dc minimum to 5.5 V dc maximum
CC
Supply voltage (V ) ........................................................................................ 0.0 V dc
SS
High level input voltage range (V ) .................................................................. 2.0 V dc to V
IH CC
+ 1.0 V dc
Low level input voltage range (V )..................................................................... -0.1 V dc to 0.8 V dc
IL
Case operating temperature range (T ) ............................................................. -55°C to +125°C
C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
_______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltages referenced to V = ground), unless otherwise specified.
(V
SS SS
3/ Negative undershoots to a minimum of -1.0 V are allowed with a maximum of 20 ns pulse width.
4/ When the thermal resistance for this case is specified in MIL-STD-1835, that value shall supersede
the value indicated herein.
5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening
conditions in accordance with method 5004 of MIL-STD-883.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-90869
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
3
DSCC FORM 2234
APR 97
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 Test Method Standard Microcircuits.
-
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM Standard F1192 -
Standard Guide for the Measurement of Single Event Phenomena (SEP) induced by
Heavy Ion Irradiation of Semiconductor Devices.
(Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr
Harbor Drive, West Conshohocken, PA 19428-2959; http://www.astm.org.)
ELECTRONICS INDUSTRIES ALLIANCE (EIA)
JEDEC Standard EIA/JESD 78 - IC Latch-Up Test.
(Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA
22201; http://www.jedec.org.)
(Non-Government standards and other publications are normally available from the organizations that prepare or distribute
the documents. These documents also may be available in or through libraries or other informational services.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outline(s) shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Truth table. The truth table shall be as specified on figure 3.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in 4.4.5e.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full
case operating temperature range.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
4
DSCC FORM 2234
APR 97
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 42 (see MIL-PRF-38535, appendix A).
3.11 Processing of EEPROMs: All testing requirements and quality assurance provisions herein shall be satisfied by the
manufacturer prior to delivery.
3.11.1 Conditions of the supplied devices: Devices will be supplied in cleared state (logic "1's"). No provision will be made for
supplying written devices.
3.11.2 Clearing of EEPROMs: When specified, devices shall be cleared in accordance with the procedures and
characteristics specified in 4.6.4.
3.11.3 Writing of EEPROMs: When specified, devices shall be written in accordance with the procedures and characteristics
specified in 4.6.3.
3.11.4 Verification of state of EEPROMs: When specified, devices shall be verified as either written to the specified pattern or
cleared. As a minimum, verification shall consist of performing a read of the entire array to verify that all bits are in the proper
state. Any bit that does not verify to be in the proper state shall constitute a device failure and the device shall be removed from
the lot or sample.
3.11.5 Power supply sequence of EEPROMs: In order to reduce the probability of inadvertent writes, the following power
supply sequences shall be observed:
a. A logic high state shall be applied to WE and/or CE at the same time or before the application of V
.
CC
b. A logic high state shall be applied to WE and/or CE at the same time or before the removal of V
4. VERIFICATION
.
CC
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
5
DSCC FORM 2234
APR 97
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in)
electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
b. Prior to burn-in, the devices shall be programmed (see 4.6.3 herein) with a checkerboard pattern or equivalent
(manufacturers at their option may employ an equivalent pattern provided it is a topologically true alternating bit
pattern). (See figure 4.) The pattern shall be read before and after burn in. Devices having bits not in the
proper state after burn in shall constitute a device failure and shall be included in the percent defective
allowable (PDA) calculation and shall be removed from the lot (see 4.2.3 herein).
c. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases,
and power dissipation, as applicable, in accordance with the intent specified in method 1015.
(1)
Dynamic burn-in for device class M (method 1015 of MIL-STD-883, test condition D or E) using the circuit
submitted ( see 4.2.1c herein).
d.
e.
Interim and final electrical parameters shall be as specified in table IIA herein.
An endurance test including a data retention bake, as specified in method 1033 of MIL-STD-883, prior to burn-in (e.g.,
may be performed at wafer sort) shall be included as part of the screening procedure, with the following conditions:
(1)
(2)
Cycling may be chip, block, byte or page at equipment room ambient and shall cycle all bytes a minimum of 10,000
cycles.
After cycling, perform a high temperature unbiased storage 48 hours at +150°C minimum. The storage time may
be accelerated by a higher temperature in accordance with the Arrhenius relationship and with the apparent
activation energy of 0.6 eV. The maximum storage temperature shall not exceed +200°C for assembled devices
and +300°C for unassembled devices. All devices shall be programmed with a charge opposite the state that the
cell would read in its equilibrium state (e.g. worst case pattern, see 3.12.3 herein).
(3)
Read the data retention pattern and test using subgroups 1, 7, and 9 (at the manufacturer's option high temperature
equivalent subgroups 2, 8A, and 10 or low temperature equivalent subgroups 3, 8B, and 11 may be used in lieu of
subgroups 1, 7, and 9) after cycling and bake, but prior to burn-in. Devices having bits not in the proper state after
storage shall constitute a device failure.
g.
After the completion of all screening, the devices shall be erased and verified prior to delivery.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
Group A Device
subgroups type
Limits
Unit
-55°C ≤ TC ≤ +125°C
V
= 0 V; 4.5 V ≤ V
unless otherwise specified
≤ 5.5 V
SS
CC
Min
Max
5
High level input
current
I
I
V
V
= 5.5 V, V = 5.5 V
IN
1,2,3
All
-5
µA
IH
CC
CC
CC
(3010)
= 5.5 V, V = 0.1 V
IN
1,2,3
-5
5
µA
µA
Low level input
current
All
All
IL
(3009)
V
V
V
= 5.5 V, V = 5.5 V
O
1,2,3
(3021)
-10
10
High impedance output I
leakage current 1/
OZH
≤ OE ≤ V
CC
IH
= 5.5 V, V = 0.0 V
1,2,3
(3020)
-10
2.4
10
I
CC
O
OZL
OH
V
IH
≤ OE ≤ V
CC
Output high voltage
Output low voltage
Input high voltage 2/
V
I
= -400 µA, V
CC
= 4.5 V
1,2,3
All
All
All
All
V
V
V
V
OH
V
IH
= 2.0 V, V = 0.8 V
IL
(3006)
V
OL
I
= 2.1 mA, V
CC
= 4.5 V
1,2,3
0.4
OL
V
IH
= 2.0 V, V = 0.8 V
IL
(3007)
VIH
V
= 5.5 V
= 4.5 V
1,2,3
2.0
6.0
0.8
CC
(3008)
Input low voltage 2/
OE high voltage
VIL
VH
V
1,2,3
(3008)
-0.5
CC
CC
1,2,3
All
All
15
16
50
V
Operating supply
current
I
V
= 5.5 V, WE = V
,
IH
1,2,3
mA
CC1
(3005)
CE = OE = V
IL
f = 1/t
AVAV
min
Standby supply current I
TTL
V
= 5.5 V, CE = V
,
All
3
mA
µA
1,2,3
CC2
CC
all I/O's = open,
OE = V , f = 0 Hz
IH
(3005)
IL
Standby supply current I
CMOS
V
= 5.5 V, CE = V
-0.3 V
500
1,2,3
(3005)
CC3
CC CC
Inputs = V , I/O's = open,
IH
OE = V , f = 0 Hz
IL
See footnotes at end of table.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
7
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
Group A Device
subgroups type
Limits
Unit
-55°C ≤ TC ≤ +125°C
V
V
= 0 V; 4.5 V ≤ V
unless otherwise specified
≤ 5.5 V
SS
CC
Min
Max
Input capacitance
3/ 4/
CIN
= 0 V, f = 1.0 MHz,
4
All
10.0
pF
IN
C
(3012)
T
= +25°C, see 4.4.1d
COUT
V
= 0 V, f = 1.0 MHz
4
pF
ns
Output capacitance
3/ 4/
OUT
All
All
10.0
(3012)
T
= +25°C, see 4.4.1d
C
7, 8A, 8B
(3014)
Functional tests
Read cycle time
See 4.4.1b
9, 10, 11
(3003)
01-02
09-10
250
tAVAV
See figures 5, 6, and 7 as
applicable.
5/
03,04,
11,12
200
150
120
05,06,
13,14
07,08,
15,16
Address access time
9, 10, 11
(3003)
01,02,
09,10
250
ns
tAVQV
03,04,
11,12
200
150
120
05,06,
13,14
11,12,
15,16
CE access time
tELQV
9, 10, 11
(3003)
01-02
09,10
250
ns
03,04,
11,12
200
150
120
50
05,06,
13,14
07,08,
15,16
OE access time
tOLQV
9, 10, 11
(3003)
All
ns
CE to output in low Z tELQX
4/
See figures 5, 6, and 7 as
applicable
9, 10, 11
(3003)
All
All
0
ns
ns
Chip disable to output tEHQZ
50
9, 10, 11
(3003)
in high Z
4/
See footnotes at end of table.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
8
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
Group A Device
subgroups type
Limits
Unit
-55°C ≤ TC ≤ +125°C
V
= 0 V; 4.5 V ≤ V
unless otherwise specified
≤ 5.5 V
SS
CC
Min
Max
OE to output in low Z
4/
tOLQX
See figures 5, 6, and 7 as
applicable.
9, 10, 11
(3003)
All
0
0
ns
Output disable to output
tOHQZ
9, 10, 11
(3003)
ns
All
All
50
in high Z
4/
9, 10, 11
(3003)
ns
ns
Output hold from address tAXQX
change
See figures 5, 6, and 7 as
applicable.
5/
9, 10, 11
(3003)
01,03,
05,07,
09,11,
13,15
10
5
Write cycle time
tWHWL1
tEHEL1
02,04,
06,08,
10,12,
14,16
Address setup time
Address hold time
Write setup time
9, 10, 11
(3003)
All
All
All
0
ns
ns
ns
tAVWL
tAVEL
tWLAX
tELAX
9, 10, 11
(3003)
50
0
tELWL
tWLEL
9, 10, 11
(3003)
Write hold time
OE setup time
tWHEH
tEHWH
9, 10, 11
(3003)
All
All
0
ns
ns
tOHWL
tOHEL
10
9, 10, 11
(3003)
OE hold time
tWHOL
tEHOL
All
All
10
ns
µs
9, 10, 11
(3003)
Write pulse width (page
or byte write)
tWLWH
tELEH
.100
9, 10, 11
(3003)
See footnotes at end of table.
SIZE
STANDARD
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DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
Group A Device
subgroups type
Limits
Unit
-55°C ≤ TC ≤ +125°C
V
= 0 V; 4.5 V ≤ V
unless otherwise specified
≤ 5.5 V
SS
CC
Min
50
Max
Data setup time
tDVWH
tDVEH
See figures 5, 6, and 7 as
applicable. 5/
9, 10, 11
(3003)
All
ns
tWHDX
tEHDX
9, 10, 11
(3003)
10
ns
µs
ns
Data hold time
Byte load cycle
All
All
9, 10, 11
(3003)
.20
100
tWHWL2
tWHEL
tEHEL
01,02,
09,10
250
9, 10, 11
(3003)
Last byte loaded to
data polling
03,04,
11,12
200
150
120
05,06,
13,14
07,08,
15,16
CE setup time
9, 10, 11
(3003)
All
All
All
5
µs
µs
ms
tELWL
OE setup time
(chip erase)
tOVHWL
9, 10, 11
(3003)
5
WE pulse width (chip tWLWH2
clear)
9, 10, 11
(3003)
10
CE hold time
(chip erase)
tWHEH
tWHOH
VH
9, 10, 11
(3003)
All
All
All
All
5
µs
µs
V
OE hold time
5
9, 10, 11
(3003)
High voltage
(chip erase)
12
13
50
9, 10, 11
(3003)
Clear recovery
tOLEL
ms
See figures 5, 6, and 7 as
applicable.
9, 10, 11
(3003)
Data setup time
6/
tDHWL
All
All
1
1
µs
µs
9, 10, 11
(3003)
Data hold time during
chip erase cycle 6/
tWHDX
9, 10, 11
(3003)
See footnotes on next page.
SIZE
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DSCC FORM 2234
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TABLE I. Electrical performance characteristics - Footnotes.
1/ Connect all address inputs and OE to V and measure I and I with the output under test connected to V
.
IH OZH OUT
OZL
Terminal conditions for the output leakage current test shall be as follows:
a. = 2.0 V: V = 0.8 V.
V
IH
IL
b. For I : Select an appropriate address to acquire a logic "1" on the designated output. Apply V to CE .
OZL IH
Measure the leakage current while applying the specified voltage.
c. For I
: Select an appropriate address to acquire a logic "0" on the designated output. Apply V to CE .
IH
OZH
Measure the leakage current while applying the specified voltage.
2/ A functional test shall verify the dc input and output levels and applicable patterns as appropriate, all input
and I/O pins shall be tested. Terminal conditions are as follows:
a. Inputs: H = 2.0 V: L = 0.8 V.
b. Outputs: H = 2.4 V minimum and L = 0.4 V maximum.
c. The functional tests shall be performed with V
3/ All pins not being tested are to be open.
= 4.5 and V = 5.5 V.
CC
CC
4/ Tested initially and after any design or process changes which may affect that parameter, and therefore shall be
guaranteed to the limits specified in table IA.
5/ Tested by application of specified timing signals and conditions.
Equivalent a.c. test conditions:
Output load: See figure 8.
Input rise and fall times ≤ 10 ns.
Input pulse levels: 0.4 V and 2.4 V.
Timing measurement reference levels:
Inputs: 1.5 V.
Outputs: 1.5 V.
6/ This parameter not applicable for internal timer controlled devices.
4.3 Qualification inspection.
4.3.1 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.5).
4.3.2 Electrostatic discharge sensitivity inspection. Electrostatic discharge sensitivity (ESDS) testing shall be performed in
accordance with MIL-STD-883, method 3015. ESDS testing shall be measured only for initial qualification and after process or
design changes which may affect ESDS classification.
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-
38535 permits in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-
38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method
5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5).
SIZE
STANDARD
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DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
APR 97
Dimensions
Inches
Letter
Millimeters
5.89
0.36/0.58
0.84/1.66
0.20/0.38
42.93
A
b
.232 max
.014/.023
.033/.065
.008/.015
1.690 max
.570/.610
.590/.620
.100 BSC
.125/.200
.150 min
.015/.060
.100 max
.005 min
b1
c
D
E
14.48/15.49
14.99/15.76
2.54
E1
e
L
3.18/5.08
3.81
L1
Q
S
0.38/1.51
2.54
S1
0.13
NOTE: Configurations A and C of MIL-STD-1835 may be used.
FIGURE 1. Case outline.
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DSCC FORM 2234
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Case Z
FIGURE 1. Case outline - Continued.
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DSCC FORM 2234
APR 97
Case Z - Continued
Variations (all dimensions shown in inches)
Symbol
Min
Max
Notes
4
A
b
.090
.015
.015
.004
.004
.120
.020
.019
.007
.006
.830
.488
.498
.498
b1
c
c1
D
E
.430
E1
E2
E3
.330
.030
8
e
.050 BSC
H
k
1.228
.015
.008
2, 5
2, 5
k1
.025 ref
L
.270
.026
.370
.045
.045
Q
S1
3
6
N
32
Inches mm │ Inches mm │ Inches mm
.004 0.10 │ .020
.005 0.13 │ .025
.006 0.15 │ .026
.007 0.18 │ .030
.008 0.20 │ .045
.015 0.38 │ .050
.019 0.48 │ .120
0.51 │ .270
0.64 │ .350
0.66 │ .370
0.76 │ .472 11.99
1.14 │ .488 12.40
1.27 │ .498 12.65
3.05 │ 1.228 31.19
6.86
8.89
9.40
NOTES:
1.
2.
All dimensions and tolerances conform to ANSI Y14.5M-1982.
Index area: An identification mark shall be located adjacent to pin 1 within the shaded area shown. Alternatively,
a tab (dim k) may be used as shown.
3.
4.
5.
6.
7.
8.
9.
Dimension Q shall be measured from the point on the lead located opposite the braze pad.
This dimension includes lid thickness.
Optional, see note 2. If pin 1 identification is used instead of this tab, the minimum dimension does not apply.
(N) indicates number of leads.
Uses a metal lid.
Includes braze fillet.
Metric equivalents are given for general information only.
FIGURE 1. Case outline - Continued.
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Case U
FIGURE 1. Case outline - Continued.
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DSCC FORM 2234
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Device types
01-08
09-16
Y
Case outlines X, Y, and
Z
U
Terminal
number
Terminal symbol
1
2
3
4
5
NC
NC
A15
A12
A7
NC
NC
NC
NC
A15
A15
A14
A12
A7
A6
6
7
A6
A5
A4
A3
A2
A12
A7
A6
A5
A4
A5
A4
A3
A2
A1
8
9
10
11
12
13
14
15
A1
A3
A0
A0
A2
NC
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
A1
A0
I/O0
16
17
18
19
20
VSS
I/O3
I/O4
I/O5
I/O6
I/O1
I/O2
VSS
I/O3
I/O4
VSS
NC
I/O3
I/O4
I/O5
21
22
23
I/O7
CE
A10
I/O5
I/O6
I/O7
I/O6
I/O7
CE
24
25
OE
A11
CE
A10
A10
OE
26
27
28
29
30
A9
OE
A11
A9
NC
A11
A9
A8
A13
A14
NC
A8
A8
A13
A13
31
32
WE
VCC
A14
NC
WE
VCC
33
34
--
--
NC
NC
--
--
35
36
--
--
WE
VCC
--
--
NC = no connection
FIGURE 2. Terminal connections.
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DSCC FORM 2234
APR 97
Mode
CE
OE
WE
I/O
Read
Write
VIL
VIL
VIH
VIL
VIH
X
VIH
VIL
X
DOUT
DIN
Standby
High Z
DOUT
Write inhibit
Write inhibit
Write inhibit
X
VIH
X
X
X
VIH
X
or high Z
High Z
DOUT
or high Z
VIL
X
No
operation
Write inhibit
VIL
VIL
VIL
Software chip
clear
VIL
VIL
VIH
VIH
VIL
VIL
DIN
DIN
Software write
protect
High voltage
chip clear
VIL
VH
VIL
VIH
V
= High logic, "1" state, V = Low logic, "0" state.
IL
IH
X = logic "don't care" state, High Z = high impedance state.
= Chip clear voltage, D = Data out, and
V
H
OUT
D
= Data in.
IN
FIGURE 3. Truth table.
SIZE
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DSCC FORM 2234
APR 97
0
1
2
3
4
5
6 225
AA AA
55 55
AA AA
55 55
226
AA
55
509
AA
55
510
AA
55
511
AA
55
R
0
0
1
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
W 2
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
3
A
D
D
R
125
126
127
128
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA AA
55 55
AA AA
55 55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
E
S
S
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
AA
55
NOTES:
1.
2.
3.
All address numbers shown in decimal.
Each column/row address location corresponds to 1 byte.
All data numbers shown in hexadecimal.
AA = 10101010
55 = 01010101
4.
Manufacturers at their option may employ an equivalent pattern provided
it is a topologically true alternating bit pattern.
FIGURE 4. Data pattern.
SIZE
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MICROCIRCUIT DRAWING
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DSCC FORM 2234
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FIGURE 5. Read mode waveforms.
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A
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DSCC FORM 2234
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WE CONTROLLED BYTE WRITE WAVEFORMS
(ALL DEVICE TYPES)
FIGURE 6. Waveforms.
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DSCC FORM 2234
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CE CONTROLLED BYTE WRITE WAVEFORMS
(ALL DEVICE TYPES)
FIGURE 6. Waveforms - Continued.
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DSCC FORM 2234
APR 97
PAGE MODE WRITE CYCLE WAVEFORMS
(ALL DEVICE TYPES)
FIGURE 6. Waveforms - Continued.
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DSCC FORM 2234
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(ALL DEVICE TYPES)
FIGURE 7. Chip erase mode waveforms.
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DSCC FORM 2234
APR 97
NOTES:
1. V
and V
will be adjusted to meet load conditions of table I.
OH
OL
2. Use this circuit or equivalent circuit.
FIGURE 8. Switching load circuit
SIZE
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DSCC FORM 2234
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WRITE DATA AA
TO
ADDRESS 5555
WRITE DATA 55
TO
ADDRESS 2AAA
WRITE DATA 80
TO
ADDRESS 5555
WRITE DATA AA
TO
ADDRESS 5555
WRITE DATA 55
TO
ADDRESS 2AAA
WRITE DATA 10
TO
ADDRESS 5555
NOTES:
1. Software chip clear timings are referenced to WE and CE inputs, whichever is last to go low,
and the WE or CE inputs, whichever is first to go high.
2. The command sequence must conform to the page write timing.
FIGURE 9. Software chip clear and software write
protect algorithm (all device types).
SIZE
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MICROCIRCUIT DRAWING
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DSCC FORM 2234
APR 97
WRITE DATA AA
TO
ADDRESS 5555
WRITE DATA 55
TO
ADDRESS 2AAA
WRITE DATA AO
TO
ADDRESS 5555
Set SWP
byte/page
load enabled
WRITE DATA XX
TO
ANY ADDRESS
WRITE LAST BYTE
TO
LAST ADDRESS
AFTER tWC
RE-ENTERS DATA
PROTECTED STATE
NOTES:
1. Reset software data protection timings are referenced to the WE or CE inputs,
whichever is last to go low, and the WE or CE inputs, whichever is first to go high.
2. A minimum of one valid byte write must follow the first three bytes of the command sequence.
3. The command sequence and subsequent data must conform to page write timing.
FIGURE 10a. Set software write protect and software protected write algorithm.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-90869
A
DEFENSE SUPPLY CENTER COLUMBUS
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DSCC FORM 2234
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WRITE DATA AA
TO
ADDRESS 5555
WRITE DATA 55
TO
ADDRESS 2AAA
WRITE DATA 80
TO
ADDRESS 5555
WRITE DATA AA
TO
ADDRESS 5555
WRITE DATA 55
TO
ADDRESS 2AAA
SWP reset
WRITE DATA 20
TO
ADDRESS 5555
NOTES:
1. Reset software data protection timings are referenced to the WE or CE inputs, whichever is last to go low, and
the WE or CE inputs, whichever is first to go high.
2. The command sequence must conform to the page write timing.
FIGURE 10b. Reset software write protect algorithm.
SIZE
STANDARD
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DSCC FORM 2234
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TABLE IIA. Electrical test requirements. 1/ 2/ 3/ 4/ 5/ 6/
Subgroups
Subgroups
(in accordance with
MIL-STD-883,
(in accordance with
MIL-PRF-38535,
Line
No.
Test
requirements
method 5005, table I)
method 5005, table III)
Device
class M
Device
class Q
Device
class V
1
2
Interim electrical
1,7,9
or
1,7,9
or
parameters (see 4.2)
2,8A,10
1,2,8A,10
Static burn-in I & II
(method 1015)
Not
required
Not
required
Required
3
4
5
6
Same as line 1
1*,7* ∆
Dynamic burn-in
(method 1015)
Required
Required
Required
1*,7*
Same as line 1
∆
Final electrical
parameters
1*,2,3,7*,
8A,8B,9,10,
11
1*,2,3,7*,
8A,8B,9,10,
11
1*,2,3,7*,
8A,8B,9,10,
11
7
8
Group A test
1,2,3,4**,7,
8A,8B,9,10,
11
1,2,3,4**,7,
8A,8B,9,10,
11
1,2,3,4**,7,
8A,8B,9,10,
11
requirements 7/
Group C end-point
electrical parameters
1,2,3,7,
2,3,7,
8A,8B
8A,8B,9,10,11
8/
∆
9
Group D end-point
electrical parameters
2,3,7,
8A,8B
2,3,7,
8A,8B
2,3,7,
8A,8B
10 Group E end-point
electrical parameters
1,7,9
1,7,9
1,7,9
1/ Blank spaces indicate tests are not applicable.
2/ Any or all subgroups may be combined when using high-speed testers.
3/ Subgroups 7, 8A, and 8B functional tests shall verify the truth table.
4/ * indicates PDA applies to subgroup 1 and 7.
5/ ** see 4.4.1d.
6/ ∆ indicates delta limit (see table IIB) shall be required where specified, and the delta values shall be computed with
reference to the previous electrical parameters (see table IIB).
7/ See table III.
8/ Delta limits required for initial qualification and after any design or process change.
SIZE
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TABLE IIB. Delta limits at +25°C.
Device types
Test 1/
All
ICC3 standby
±10% of specified value in table I
IIH, IIL
±10% of specified value in table I
±10% of specified value in table I
IOHZ, IOLZ
1/ The above parameters shall be recorded before and after
the required burn-in and life tests to determine the delta ∆.
TABLE III. Input/output pulse levels for table I, subgroups 7, 8A, 8B, 9, 10, and 11.
Symbol
VCC
Terminals
VCC
A
B
Device type
All
Units
V
4.5
5.5
Logic inputs
address and
control pins
VIH
VIL
2.4
0.4
2.4
0.4
All
All
V
V
Logic inputs
address and
control pins
Logic output
compare level
VOH
VOL
2.0
0.8
2.0
0.8
All
All
V
V
Logic output
compare level
250
200
150
120
250
200
150
120
01,02,09,10
03,04,11,12
05,06,13,14
07,08,15,16
ns
ns
ns
ns
tAVQV
Address
250
200
150
120
250
200
150
120
01,02,09,10
03,04,11,12
05,06,13,14
07,08,15,16
ns
ns
ns
ns
tELQV
Chip enable
tOLQV
tAXQX
Output enable
I/O0 – I/O7
50.0
0.0
50.0
0.0
All
All
ns
ns
Note:
1. For VOH and VOL, the logic output compare levels shall be 1.5 V for subgroups 9, 10, and 11 only.
SIZE
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4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. For device class M, subgroups 7, 8A, and 8B tests shall be sufficient to verify the truth table. For device classes Q
and V subgroups 7, 8A, and 8B shall include verifying the functionality of the device.
c. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which may
affect the performance of the device. For device class M, procedures and circuits shall be maintained under document
revision level control by the manufacturer and shall be made available to the preparing activity or acquiring activity
upon request. For device classes Q and V, the procedures and circuits shall be under the control of the device
manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing activity or
acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up test shall be
considered destructive. Information contained in JEDEC Standard EIA/JESD 78 may be used for reference.
d. Subgroup 4 (CIN and COUT measurements) shall be measured only for initial qualification and after any process or
design changes which may affect input or output capacitance. Capacitance shall be measured between the designated
terminal and GND at a frequency of 1 Mhz. Sample size is fifteen devices with no failures, and all input and output
terminals tested.
e. All devices selected for testing shall be programmed with a checkerboard pattern or equivalent. After completion of
all testing, the devices shall be cleared and verified, (except device submitted for groups B, C, and D testing).
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
Delta limits shall apply only to subgroup 1 of group C inspection and shall consist of tests specified in table IIB herein.
4.4.2.1 Additional criteria for device class M.
a. Steady-state life test conditions, method 1005 of MIL-STD-883:
(1) The devices selected for testing shall be programmed with a checkerboard pattern. After completion of all
testing, the devices shall be cleared and verified (except devices submitted for group D testing).
(2) Test condition D or E. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
(3) T = +125°C, minimum.
A
(4) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
b. An endurance test, as specified in method 1033 of MIL-STD-883, shall be added to group C, subgroup 1 inspection
prior to performing the steady-state life test (see 4.4.2.1a) and extended data retention (see 4.4.2.1b). Cycling may be
block, byte, or page from devices passing group A after the completion of the requirements of 4.2 herein. Initially two
groups of devices shall be formed, cell 1 and cell 2. The following conditions shall be met:
(1) Cell 1 shall be cycled at -55°C and cell 2 shall be cycled at +125°C for a minimum of 10,000 cycles for device
types.
(2) Perform group A, subgroups 1, 7, and 9 after cycling. Form new cells (cell 3 and cell 4) for steady-state life and
extended data retention. Cell 3 for steady-state life test consists of one-half of the devices from cell 1 and one-
half of the devices from cell 2. Cell 4 for extended data retention consists of the remaining devices from cell 1
and cell 2.
(3) Extended data retention test shall consist of the following:
a.
All devices shall be programmed with a charge on all memory cells in each device, such that loss of
charge (e.g., leakage in the cell) can be detected (e.g., worst case pattern).
b.
Unbiased bake for 1,000 hours (minimum) at +150°C (minimum). The unbiased bake time may be
accelerated by using higher temperature in accordance with the Arrhenius Relationship and with the
apparent activation of 0.6 eV. The maximum bake temperature shall not exceed +200°C for packaged
devices or +300°C for unassembled devices.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
30
DSCC FORM 2234
APR 97
c.
Read the pattern after bake and perform end-point electrical tests in accordance with table IIA herein for
group C.
(4) The sample plans for cell 1, cell 2, cell 3, and cell 4 shall individually be the same as for group C, subgroup 1,
as specified in method 5005 of MIL-STD-883, and shall individually pass the specified sample plan.
c. After the completion of all testing, the devices shall be cleared and verified prior to delivery.
4.4.3.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
steady-state life test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1005 of MIL-STD-883. After the completion of all testing, the devices shall be erased and verified prior to delivery.
4.4.4 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
The devices selected for testing shall be programmed with a checkerboard pattern (see figure 9). After completion of all
testing, the devices shall be erased and verified.
4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a. End-point electrical parameters shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C
±5°C, after exposure, to the subgroups specified in table IIA herein.
4.5 Delta measurements for device classes Q and V. Delta measurements, as specified in table IIA, shall be made and
recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical
parameters to be measured, with associated delta limits are listed in table IIB.
4.6 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.6.1 Voltages and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are
conventional and positive when flowing into the referenced terminal.
4.6.2 Life test, burn-in, cool down and electrical test procedure. When devices are measured at +25°C following application of
the steady state life or burn-in test condition, all devices shall be cooled to +35°C or within +10°C of the power stable condition
prior to removal of bias voltages/signals. Any electrical tests required shall first be performed at -55°C or +25°C prior to any
required tests at +125°C.
4.6.3 Writing procedure. The waveforms and timing relationships shown on figure 6 and the conditions specified in table IA
shall be adhered to. Initially and after each chip clear (see 4.6.4), all bits are in the high state (output at V ).
OH
4.6.3.1 Byte write operation. Information is introduced by selectively writing "L" (logic "0" level) or "H" (logic "1" level) into the
desired bit. A written "L" can be changed to an "H" by writing an "H". No clearing is necessary (see 4.6.4).
4.6.3.2 Page write operation. The page write operation can be initiated during any write operation. Following
the initial byte write cycle, the host can write an additional one to 127 bytes in the same manner as the first byte
was written. Each successive byte load cycle, started by the WE ( CE ) HIGH to LOW transition, must begin within
150 µs of the falling edge of the preceding WE ( CE ) high to low transition, [twlwh1+twhwl2] or [teleh1+tehel2]. If
a subsequent WE HIGH to LOW transition is not detected within 150 µs, the internal automatic write cycle will
commence. The successive writes need not be sequential; however, the page address (A7 through A16) for each
write during a page write operation shall be the same.
4.6.3.3 Data polling operation. During the internal writing cycle after a byte or page write operation, an attempt to read the
last byte written will produce the complement of that data on all I/O or I/07 (i.e., write data - 0xxx xxxx and read data - 1xxx xxx).
Once the writing cycle has completed, all I/0 or I/O7 will reflect true data (i.e. write data - 0xxx xxx, read data - 0xxx xxx).
4.6.3.4 Toggle bit. Toggle bit determines the end of the internal write cycle. While the internal write cycle is in progress I/0
6
toggles from 1 to 0 and 0 to 1 on sequential polling reads. When the internal write cycle is complete, the toggling stops and the
device is ready for additional read/write operations.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
31
DSCC FORM 2234
APR 97
4.6.4 Clearing procedure. The waveforms and timing relationship shown on figures 5, 6, 7, and 8 and the conditions specified
in table IA shall be adhered to. Initially and after each chip clear, all bits are in the high state (output at V ).
OH
4.6.4.1 Byte clearing. A byte is cleared by simultaneously writing an "H" state into each bit at the selected address (see
4.6.3). This can be done by a byte write cycle or a page mode write cycle (see figure 6).
4.6.4.2 Software chip clear. Software chip clear is performed by executing a series of instructions to the device (see figure 9).
At the end of the step sequence, the device begins and completes chip clear internally. The waveforms and timing relationships
shown on figures 6 and 7, and the test conditions and limits specified in table IA apply.
4.6.4.3 High voltage chip clear. The device is cleared by setting the OE (output enable) pin to V (see figure 7) while all
H
other inputs are set in the normal byte erase mode (see 4.6.4.2). After chip clear, all bits are in the "H" state. (Applies to all
device types.)
4.6.5 Read mode operation. The device is in the read mode whenever the CE and OE pins are at V . The waveforms and
IL
timing relationships shown on figure 5 and the test conditions and limits specified in table I shall be applied.
4.6.6 Extended page load. The write cycle must be "stretched" by maintaining WE low, assuming a write
enable-controlled cycle, and leaving all other control inputs ( CE , OE ) in the proper page load cycle state. Since
the page load timer is reset on the falling edge of WE , keeping this signal low will inhibit the page timer. When
WE returns high, the input data is latched and the page load cycle timer begins in CE controlled write. The same
is true, with CE holding the timer reset instead of WE .
4.6.7 Software data protection. Device types 01 through 15 software data protection offers a method of preventing
inadvertent writes. The instruction, waveforms, and timing relationships shown on figures 5, 6, 10a, and figure 10b, and the
conditions specified in table IA shall apply.
4.6.7.1 Set software protection. Device types 01 through 15 are placed in protected state by writing a series of instructions
(see figure 10a) to the device. Once protected, writing to the device may only be preformed by executing the same sequence
of instructions appended with either a byte write operation or page write operation. The waveforms and timing relationship
shown on figure 6 and the test conditions and limits specified in table IA apply.
4.6.7.2 Reset software data protection. Device types 01 through 15 protection feature is reset by writing a series of
instructions (see figure 10b) to the device. The waveforms and timing relationships shown on figure 6 and the test conditions
and limits specified in table IA apply.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
(614) 692-0547.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
32
DSCC FORM 2234
APR 97
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331 and herein:
C
IN and COUT .......................... Input and bidirectional output, terminal-to-GND capacitance.
GND....................................... Ground zero voltage potential.
CC .......................................... Supply current.
IIL............................................ Input current low.
IH ........................................... Input current high.
I
I
TC........................................... Case temperature.
TA ........................................... Ambient temperature.
VCC ......................................... Positive supply voltage.
VH........................................... Output enable and write enable voltage during chip erase.
O/V......................................... Latch-up over-voltage
6.5.1 Timing limits. The table of timing values shows either a minimum or a maximum limit for each parameter. Input
requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the
system must supply at least that much time (even though most devices do not require it). On the other hand, responses from
the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never
provides data later than that time.
6.5.2 Timing parameter abbreviations. All timing abbreviations use lower case characters with upper case character
subscripts. The initial character is always "t" and is followed by four descriptors. These characters specify two signal points
arranged in a "from-to" sequence that define a timing interval. The two descriptors for each signal specify the signal name and
the signal transition. Thus the format is:
t
X
X
X
X
Signal name from which interval is defined
Transition direction for first signal
Signal name to which interval is defined
Transition direction for second signal
│
│
│
│
│
│
│
│
│
│
a. Signal definitions:
A = Address
D = Data in
Q = Data out
W = Write enable
E = Chip enable
O = Output enable
b. Transition definitions:
H = Transition to high
L = Transition to low
V = Transition to valid
X = Transition to invalid or don't care
Z = Transition to off (high impedance)
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-90869
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
33
DSCC FORM 2234
APR 97
6.5.3 Waveforms.
WAVEFORM
SYMBOL
INPUT
OUTPUT
MUST BE VALID
WILL BE VALID
CHANGE FROM
H TO L
WILL CHANGE FROM
H TO L
CHANGE FROM
L TO H
WILL CHANGE FROM
L TO H
DON'T CARE ANY
CHANGE
CHANGING STATE
UNKNOWN
PERMITTED
HIGH IMPEDANCE
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
SIZE
STANDARD
5962-90869
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
C
SHEET
34
DSCC FORM 2234
APR 97
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 07-04-13
Approved sources of supply for SMD 5962-90869 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate
of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of
supply at http://www.dscc.dla.mil/Programs/Smcr/.
Vendor
CAGE
number
Vendor
similar
PIN 2/
Standard
microcircuit
drawing PIN 1/
5962-9086901MXA
5962-9086901MYA
5962-9086901MZC
5962-9086901MUC
5962-9086902MXA
5962-9086902MYA
5962-9086902MZC
5962-9086902MUC
5962-9086903MXA
5962-9086903MYA
5962-9086903MZC
5962-9086903MUC
5962-9086904MXA
5962-9086904MYA
5962-9086904MZC
5962-9086904MUC
34371
34371
3/
X28C512DMB-25
X28C512EMB-25
X28C512FMB-25
X28C512KMB-25
X28C512DMB-25
X28C512EMB-25
X28C512FMB-25
X28C512KMB-25
X28C512DMB-20
X28C512EMB-20
X28C512FMB-20
X28C512KMB-20
X28C512DMB-20
X28C512EMB-20
X28C512FMB-20
X28C512KMB-20
3/
3/
34371
3/
3/
34371
3/
3/
3/
3/
3/
3/
3/
5962-9086905MXA
5962-9086905MYA
5962-9086905MZC
5962-9086905MUC
5962-9086906MXA
5962-9086906MYA
5962-9086906MZC
5962-9086906MUC
34371
3/
X28C512DMB-15
X28C512EMB-15
X28C512FMB-15
X28C512KMB-15
X28C512DMB-15
X28C512EMB-15
X28C512FMB-15
X28C512KMB-15
3/
3/
34371
34371
3/
3/
See footnotes at end of list.
Page 1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN – continued.
Standardized
military drawing
PIN
Vendor
CAGE
number
Vendor
similar
PIN 1/
5962-9086907MXA
5962-9086907MYA
5962-9086907MZC
5962-9086907MUC
5962-9086908MXA
5962-9086908MYA
5962-9086908MZC
5962-9086908MUC
5962-9086909MYA
5962-9086910MYA
5962-9086911MYA
5962-9086912MYA
34371
3/
X28C512DMB-12
X28C512EMB-12
X28C512FMB-12
X28C512KMB-12
X28C512DMB-12
X28C512EMB-12
X28C512FMB-12
X28C512KMB-12
X28C513EMB-25
X28C513EMB-25
X28C513EMB-20
X28C513EMB-20
3/
3/
3/
34371
3/
3/
3/
3/
3/
3/
5962-9086913MYA
5962-9086914MYA
5962-9086915MYA
5962-9086916MYA
3/
3/
3/
3/
X28C513EMB-15
X28C513EMB-15
X28C513EMB-12
X28C513EMB-12
1/ The lead finish shown for each PIN representing a hermetic package
is the most readily available from the manufacturer listed for that part.
If the desired lead finish is not listed contact the vendor to determine
its availability.
2/ Caution. Do not use this number for item acquisition. Items acquired to
this number may not satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
34371
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035- 5680
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
Page 2 of 2
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