1N5821 [WTE]

3.0A SCHOTTKY BARRIER RECTIFIER; 3.0A肖特基整流器
1N5821
型号: 1N5821
厂家: WON-TOP ELECTRONICS    WON-TOP ELECTRONICS
描述:

3.0A SCHOTTKY BARRIER RECTIFIER
3.0A肖特基整流器

二极管
文件: 总3页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WTE  
PO WER SEM ICONDUCTORS  
1N5820 – 1N5822  
3.0A SCHOTTKY BARRIER RECTIFIER  
Features  
!
!
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
!
!
!
!
High Current Capability  
A
B
A
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
C
D
Mechanical Data  
DO-201AD  
Min  
Dim  
A
Max  
!
!
Case: Molded Plastic  
25.4  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
B
8.50  
9.50  
1.30  
5.60  
C
1.20  
!
!
!
!
D
5.0  
Weight: 1.2 grams (approx.)  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol  
1N5820  
20  
1N5821  
1N5822  
40  
Unit  
VRRM  
VRWM  
VR  
30  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
14  
21  
28  
V
A
Average Rectified Output Current (Note 1)  
@TL = 90°C  
3.0  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single half sine-wave superimposed on rated load  
IFSM  
80  
A
(JEDEC Method)  
@TL = 75°C  
Forward Voltage  
@IF = 3.0A  
@IF = 9.4A  
0.475  
0.850  
0.50  
0.90  
0.525  
0.950  
VFM  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
2.0  
20  
IRM  
mA  
Typical Junction Capacitance (Note 2)  
Cj  
250  
20  
pF  
K/W  
°C  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
-65 to +150  
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
1N5820 – 1N5822  
1 of 3  
© 2002 Won-Top Electronics  
4
3
30  
10  
Single Phase Half-Wave  
60 Hz Resistive or Inductive  
Load 9.5mm Lead Length  
2
1
0
1.0  
Tj = 25ºC  
Pulse Width = 300µs  
2% Duty Cycle  
0.1  
10  
50  
100  
150  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Voltage Characteristics  
TL, LEAD TEMPERATURE (ºC)  
Fig. 1 Forward Current Derating Curve  
100  
80  
1000  
Tj = 25ºC  
f = 1MHz  
60  
40  
20  
0
100  
8.3ms Single Half Sine-Wave  
JEDEC Method  
10  
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Peak Forward Surge Current  
Fig. 4 Typical Junction Capacitance  
1N5820 – 1N5822  
2 of 3  
© 2002 Won-Top Electronics  
ORDERING INFORMATION  
Product No.!  
1N5820-T3  
Package Type  
Shipping Quantity  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
DO-201AD  
1200/Tape & Reel  
1200/Tape & Box  
500 Units/Box  
1N5820-TB  
1N5820  
1N5821-T3  
1N5821-TB  
1N5821  
1200/Tape & Reel  
1200/Tape & Box  
500 Units/Box  
1N5822-T3  
1N5822-TB  
1200/Tape & Reel  
1200/Tape & Box  
500 Units/Box  
1N5822  
Products listed in  
are WTE  
devices.  
Preferred  
bold  
!T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.  
Shipping quantity given is for minimum packing quantity only. For minimum order  
quantity, please consult the Sales Department.  
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any  
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to  
manufacturer. WTE reserves the right to change any or all information herein without further notice.  
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life  
WARNING  
support devices or systems without the express written approval.  
Won-Top Electronics Co., Ltd.  
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan  
Phone: 886-7-822-5408 or 886-7-822-5410  
Fax: 886-7-822-5417  
Email: sales@wontop.com  
Internet: http://www.wontop.com  
Wepoweryoureveryday.  
1N5820 – 1N5822  
3 of 3  
© 2002 Won-Top Electronics  

相关型号:

1N5821-13

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD
DIODES

1N5821-3A-DO-27

3.0 AMP SCHOTTKY BARRIER RECTIFIERS
DGNJDZ

1N5821-AP

3 Amp Schottky Barrier Rectifier 20 - 40 Volts
MCC

1N5821-AP-HF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD,
MCC

1N5821-B

3.0A SCHOTTKY BARRIER RECTIFIERS
DIODES

1N5821-B

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON

1N5821-B

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, Silicon,
FRONTIER

1N5821-BP

3 Amp Schottky Barrier Rectifier 20 - 40 Volts
MCC

1N5821-BP-HF

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD,
MCC

1N5821-E3/100

DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

1N5821-E3/4G

DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

1N5821-E3/53

DIODE 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY