AP601-PCB2140 [WJCI]
High Dynamic Range 1.8W 28V HBT Amplifier; 高动态范围1.8W 28V HBT放大器
| 型号： | AP601-PCB2140 |
| 厂家： | 
WJ COMMUNICATION. INC. |
| 描述： | High Dynamic Range 1.8W 28V HBT Amplifier |
| 文件： | 总10页 (文件大小：767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Product Features
Product Description
Functional Diagram
The AP601 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has 13.5 dB gain, while
being able to achieve high performance for 800-2400 MHz
applications with up to +32.5 dBm of compressed 1dB power.
• 800 – 2400 MHz
• +32.5 dBm P1dB
• -51 dBc ACLR @ ¼W PAVG
• -55 dBc IMD3 @ ¼W PEP
• 17% Efficiency @ ¼W PAVG
• Internal Active Bias
The AP601 uses
InGaP/GaAs HBT process technology.
a
high reliability, high voltage
The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP601 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
• Internal Temp Compensation
• Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 1W CW Pout
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-35
20 mA
• Lead-free/RoHS-compliant
5x6 mm power DFN package
-40
40 mA
50 mA
-45
-50
-55
-60
The AP601 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Applications
• Mobile Infrastructure HPA
• WiBro HPA
18
20
22
24
26
Average Output Power (dBm)
Specifications
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Units Min Typ Max
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
Typical
1960
+24
15
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
MHz
MHz
dBm
dB
800
2200
940
+24
15.8
13
2140
+24
13.5
12
2140
+24
13.5
12
11
10
-49
-62
52
17
7
8
dB
-50
-51
52
-51
-55
52
dB
8
dBc
dBc
mA
mA
%
-51
-55
1
52
17
17
17
dBm
mA
V
+32.5 +32.7 +32.5
40
+5
+28
dBm
mA
V
+32.5
40
+5
Vcc
V
Quiescent Current, Icq
Vpd, Vbias
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
Vcc
V
+28
2. The AP601 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
Absolute Maximum Rating
Parameter
Storage Temperature, Tstg
Rating
-55 to +125 ºC
Ordering Information
Junction Temperature, TJ
192 ºC
For 106 hours MTTF
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
80 mA
Part No.
Description
AP601-F
High Dynamic Range 28V 1.8W HBT Amplifier
AP601-PCB900 869-960 MHz Evaluation board
AP601-PCB1960 1930-1990 MHz Evaluation board
AP601-PCB2140 2110-2170 MHz Evaluation board
2.3 W
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Page 1 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 40 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
S22
S11
Gain / Maximum Stable Gain
Swp Max
Swp Max
40
35
30
25
20
15
10
5
3.00001GHz
3.00001GHz
DB(|S(2,1)|)
DB(GMax())
0
-5
-10
0
0.5
1
1.5
2
2.5
Swp Min
3e-005GHz
Swp Min
3e-005GHz
Frequency (GHz)
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
S11 (dB)
-9.60
-8.20
-5.47
-2.93
-2.02
-1.58
-1.69
-1.49
-1.52
-1.70
-2.01
-2.35
-2.78
-3.34
-4.04
-5.00
-5.86
S11 (ang)
-165.86
-156.90
-154.63
-164.90
-173.51
-179.10
177.02
173.06
168.28
162.02
153.47
142.58
130.51
119.29
111.03
109.46
118.67
S21 (dB)
22.23
21.64
20.66
18.00
15.57
13.78
12.16
11.02
10.09
9.48
9.14
8.93
8.73
8.50
8.34
8.17
8.03
S21 (ang)
169.20
160.86
144.37
121.17
107.46
98.50
89.73
82.27
75.95
69.46
61.67
52.54
42.07
30.77
17.30
1.87
S12 (dB)
-46.52
-41.16
-36.22
-32.88
-31.96
-31.66
-30.97
-30.27
-29.97
-29.41
-28.83
-28.18
-27.42
-26.75
-26.07
-25.45
-25.11
S12 (ang)
80.76
69.46
55.53
35.73
24.64
18.33
22.20
13.95
9.68
5.89
1.59
-4.64
-11.50
-20.45
-30.92
-44.10
-62.65
S22 (dB)
-0.25
-0.38
-1.13
-2.85
-3.92
-4.42
-4.57
-4.73
-4.46
-4.15
-3.85
-3.63
-3.42
-3.20
-2.86
-2.39
-1.91
S22 (ang)
-5.41
100
200
400
600
-14.13
-26.14
-41.81
-51.12
-58.97
-65.06
-70.40
-74.09
-77.84
-81.69
-85.86
-90.97
-97.68
-106.74
-119.23
-134.59
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-16.70
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 2 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz
copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP601 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
Turn-on Sequence:
1. Attach input and output loads onto the evaluation board.
2. Turn on power supply Vcc = +28V.
3. Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25μA).
4. Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 40 mA.
5. Turn on RF power.
Turn-off Sequence:
1. Turn off RF power.
2. Turn off power supply Vpd = +5V.
3. Turn off power supply Vbias = +5V.
4. Turn off power supply Vcc = +28V.
Notes:
1. Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 80mA.
2. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq
quiescent current setting. Ipd can be up to 2mA at a quiescent current setting of 40mA.
3. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 2mA on the AP601.
Ipd vs Icq
Ibias vs Output Power
2
1.5
1
2
1.5
1
0.5
0
0.5
0
18
20
22
24
26
28
0
20
40
60
80
100
Icq Setting (mA)
Output Average Power (dBm)
Specifications and information are subject to change without notice
Page 3 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
869-960 Application Circuit (AP601-PCB900)
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
Frequency (MHz)
W-CDMA Ch. Power
Power Gain
880
940 Units
+24
+24 dBm
16.5 15.8
dB
dB
Input Return Loss
Output Return Loss
ACLR
8.9
15
14
7.5
-50
-51
52
dB
-50
-51
54
dBc
dBc
mA
%
C7
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
1000pF
16.6
17
+32.5 +32.5 dBm
Quiescent Current, Icq
Vpd, Vbias
40
+5
mA
V
15nH
See note 6
5.1 Ohm
3.3pF
See note 3
C26
0.5pF
See note 5
C24
1.8pF
See note 4
Vcc
+28
V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C1 is at 0.710” (29.1° @ 940 MHz) from the center of C24.
4. The center of C24 is placed at 0.285” (11.7°@ 940 MHz) from the edge of the AP601 (U1).
5. The center of C26 is placed at 0.055” (2.3° @ 940 MHz) from the edge of the AP601 (U1).
6. The center of L4 is at 0.095” (3.9° @ 940 MHz) from the center of C26.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at components L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
60
50
40
30
20
10
0
0
-5
18
17
16
15
14
13
920 MHz
940 MHz
960 MHz
-10
-15
-20
-25
S11
S22
0.8
0.84
0.88
0.92
0.96
1
0.8
0.85
0.9
0.95
1
1.05
1.1
17
21
25
29
33
Frequency (GHz)
Frequency (GHz)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
IMD vs. Output Power
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
-40
-45
-50
-55
-60
-40
-50
-60
-70
-40
-50
-60
-70
869 MHz
880 MHz
894 MHz
920 MHz
940 MHz
960 MHz
IMD3L
IMD3U
IMD5
WCDMA 3GPP Test Model 1+64DPCH,
60% clipping, PAR = 8.6 dB @ 0.01%
20
22
24
26
28
30
16
18
20
22
24
26
17
19
21
23
25
27
Average Output Power (dBm)
Output Power, PEP (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 4 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
1930-1990 MHz Application Circuit (AP601-PCB1960)
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
Frequency
1960 MHz
+24 dBm
15 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
11 dB
10 dB
-49 dBc
-62 dBc
52 mA
17 %
C7
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
W = .030”
L = .980”
1000pF
C27
0.1μF
+32.7 dBm
40 mA
+5 V
Quiescent Current, Icq
Vpd, Vbias
4.7 nH
See note 3
C19
2.4pF
See note 5
C5
2.2pF
See note 4
C28
0.8pF
See note 6
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.035” (3.0° @ 1960 MHz) from the center of C5.
4. The center of C5 is placed at 0.085” (7.3° @ 1960 MHz) from the edge of the AP601 (U1).
5. The center of C19 is placed at 0.755” (64.5° @ 1960 MHz) from the edge of the AP601 (U1).
6. The center of C18 is placed at 0.300” (25.6° @ 1960 MHz) from the center of C19.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component location L3 for this particular reference design.
1930-1990 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
50
40
30
20
10
0
16
15
14
13
12
11
0
-5
1930 MHz
1960 MHz
1990 MHz
-10
-15
-20
-25
1930 MHz
1960 MHz
1990 MHz
S11
S22
1.8
1.85
1.9
1.95
2
2.05
2.1
23
25
27
29
31
33
18
22
26
30
34
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
IMD vs. Output Power
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 1960 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
Vcc = 28V, Icq = 40 mA, 25 ˚C
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
-40
-45
-50
-55
-60
-65
-40
-50
-60
-70
-80
-40
-50
-60
-70
-80
1930 MHz
1960 MHz
1990 MHz
IMD3L
IMD3U
IMD5
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
16
18
20
22
24
26
22
24
26
28
30
32
17
19
21
23
25
27
Average Output Power (dBm)
Output Power, PEP (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice
Page 5 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Circuit (AP601-PCB2140)
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
Frequency
2140 MHz
+24 dBm
13.5 dB
12 dB
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
8 dB
-51 dBc
-55 dBc
52 mA
17 %
C7
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
1000pF
+32.5 dBm
40 mA
+5 V
Quiescent Current, Icq
Vpd, Vbias
3,3pF
C22 See note 4
1.2pF
C19
1.8pF
See note 6
C5
2.4pF
See note 5
See note 3
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.090” (8.4° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.910” (84.9° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.100” (9.3° @ 2140 MHz) from the edge of the AP601 (U1).
6. The center of C19 is placed at 0.760” (70.9° @ 2140 MHz) from the edge of the AP601 (U1).
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
14
13
12
11
10
9
0
-5
50
40
30
20
10
0
2110 MHz
2140 MHz
2170 MHz
-10
-15
-20
-25
2110 MHz
S11
S22
2140 MHz
2170 MHz
2
2.05
2.1
2.15
2.2
2.25
2.3
12
16
20
24
28
32
22
24
26
28
30
32
Frequency (GHz)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
-35
-40
-45
-50
-55
-60
65
60
55
50
45
40
-35
-40
-45
-50
-55
-60
26 V
28 V
30 V
32 V
2110 MHz
2140 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
16
18
20
22
24
26
16
18
20
22
24
26
16
18
20
22
24
26
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
Page 6 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
15
14
13
12
11
10
150
125
100
75
50
40
30
20
10
0
-40 ˚C
-40 ˚C
25 ˚C
85 ˚C
25 ˚C
85 ˚C
50
-40 ˚C
25 ˚C
85 ˚C
25
0
14
18
22
26
30
34
14
18
22
26
30
34
14
18
22
26
30
34
Output Power (dBm)
Output Power (dBm)
Output Power (dBm)
ACLR1 vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
Icc vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
Efficiency vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
-35
-40
-45
-50
-55
-60
70
25
-40 ˚C
25 ˚C
85 ˚C
-40 ˚C
-40 ˚C
25 ˚C
85 ˚C
20
15
10
5
25 ˚C
85 ˚C
60
50
40
30
0
16
18
20
22
24
26
16
18
20
22
24
26
16
18
20
22
24
26
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Frequency vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, +24 dBm Pout
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
Efficiency vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
15
14
13
12
11
10
30
-35
26 V
28 V
30 V
32 V
26 V
25
20
15
10
5
28 V
30 V
32 V
-40
-45
-50
-55
-60
-40 ˚C
25 ˚C
85 ˚C
0
2110
2130
2150
2170
16
18
20
22
24
26
16
18
20
22
24
26
Frequency (MHz)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Vcc
CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C
IMD vs. Output Power
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
60
50
40
30
20
10
0
-40
-50
-60
-70
-80
14
13
12
11
10
9
26 V
28 V
30 V
32 V
IMD3L
IMD3U
IMD5
26 V
28 V
30 V
32 V
12
16
20
24
28
32
22
24
26
28
30
32
12
16
20
24
28
32
Output Power (dBm)
Output Power (dBm)
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
Page 7 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
The AP601 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended
circuit configurations shown previously in this datasheet have the device operating with a 40 mA as the quiescent current (ICQ).
This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the
efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade
the device’s efficiency. Measured data shown in the plots below represents the AP601 measured and configured for 2.14 GHz
applications. It is expected that variation of the bias current for other frequency applications will produce similar performance
results.
Thermal Rise vs. Output Power vs. Icq
Icq
(mA)
10
20
30
40
50
60
70
R2
(Ω)
12k
5.44k
3.48k
2.61k
2.06k
1.67k
1.42k
1.22k
VPD PIN_VPD
Vcc = 28V
(V)
(V)
2.50
2.58
2.63
2.68
2.72
2.77
2.81
2.85
80
60
40
20
0
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
5
5
5
5
C7
1000pF
5
5
5
5
3,3pF
C22
1.2pF
C19
1.8pF
C5
2.4pF
80
14
16
18
20
22
24
26
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
Efficiency vs. Output Power vs. Icq
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-30
-40
-50
-60
120
30
25
20
15
10
5
10 mA
20 mA
40 mA
60 mA
80 mA
10 mA
50 mA
20 mA
60 mA
30 mA
70 mA
40 mA
80 mA
10 mA
50 mA
20 mA
60 mA
30 mA
70 mA
40 mA
80 mA
30 mA
50 mA
70 mA
100
80
60
40
20
0
0
18
20
22
24
26
18
20
22
24
26
18
20
22
24
26
Average Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Gain vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
Output Power vs. Input Power vs. Icq
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
15
14
13
12
11
10
34
30
26
22
18
60
50
40
30
20
10
0
10 mA
20 mA
40 mA
60 mA
80 mA
30 mA
50 mA
70 mA
10 mA
30 mA
50 mA
70 mA
20 mA
40 mA
60 mA
80 mA
10 mA
50 mA
20 mA
60 mA
30 mA
70 mA
40 mA
80 mA
18
22
26
Output Power (dBm)
30
34
4
8
12
16
20
18
22
26
Output Power (dBm)
30
34
Input Power (dBm)
Specifications and information are subject to change without notice
Page 8 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2320-2380 MHz WiBro Application Circuit
Typical WCDMA Performance at 25 °C
at a channel power of +23 dBm
Frequency
2350 MHz
+23 dBm
14 dB
W-CDMA Channel Power
Power Gain
ACLR
-50 dBc
50 mA
Operating Current, Icc
Collector Efficiency
Output P1dB
C34
C33
14 %
C7
+32.5 dBm
40 mA
W = .030”
L = .590”
1000pF
Quiescent Current, Icq
Vpd, Vbias
+5 V
C32
22pF
Vcc
+28 V
22pF
22pF
C31
1.1pF
See note 6
C30
0.2pF
See note 5
C19
0.6pF
See note 4
C3
1.6pF
See note 3
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
C32 C33 C34
3. The center of C3 is placed at 0.050” (5.1° @ 2.35 GHz) from the edge of the AP601 (U1).
4. The center of C19 is placed at 0.650” (66.6° @ 2.35 GHz) from the edge of the AP601 (U1).
5. The center of C30 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C19.
6. The center of C31 is placed at 0.040” (4.1° @ 2.35 GHz) from the center of C19.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
C31
C30
C19
2320-2380 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
60
50
40
30
20
10
0
15
14
13
12
11
10
2320 MHz
2350 MHz
2380 MHz
2320 MHz
2350 MHz
2380 MHz
22
24
26
28
30
32
34
22
24
26
28
30
32
34
Output Power (dBm)
Output Power (dBm)
EVM vs. Output Power
Vcc = 28V, Icq = 40 mA, 25 ˚C, 2350 MHz
Efficiency vs. Output Power vs. Frequency
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
Vcc = 28V, Icq = 40 mA, 25 ˚C
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
-40
-45
-50
-55
-60
2320 MHz
2350 MHz
2380 MHz
2320 MHz
2350 MHz
2380 MHz
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
0
0.0
20
21
22
23
24
25
20
21
22
23
24
25
20
21
22
23
24
25
Output Power (dBm)
Average Output Power (dBm)
Average Output Power (dBm)
Specifications and information are subject to change without notice
Page 9 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
AP601-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with a
“AP601-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
Function
PIN_VBIAS
N/C
2, 3, 7, 8, 12, 13
4, 5, 6
RF IN
9, 10, 11
14
Backside paddle
RF Output / Vcc
PIN_VPD
GND
MSL / ESD Rating
ESD Rating: Class 1B
Value:
Test:
Standard:
Passes ꢀ500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Test:
Standard:
Passes ꢀ1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MTTF vs. Junction Temperature
1.E+09
Thermal Specifications
Parameter
Rating
1.E+08
1.E+07
1.E+06
1.E+05
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Thermal Resistance, ΘJC
33.3 °C / W
Referenced from peak junction to the
center of the bottomside ground paddle
Junction Temperature, TJ
192 ºC
250 ºC
For 106 hours MTTF
Max Junction Temperature, TJ,max
For catastrophic failure
120
140
160
180
200
Junction Temperature (°C)
Specifications and information are subject to change without notice
Page 10 of 10 May 2007 ver 1
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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