MJE3055 [WINNERJOIN]

TRANSISTOR (NPN); 晶体管( NPN )
MJE3055
型号: MJE3055
厂家: SHENZHEN YONGERJIA INDUSTRY CO.,LTD    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
描述:

TRANSISTOR (NPN)
晶体管( NPN )

晶体 晶体管
文件: 总1页 (文件大小:125K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
MJE3055  
MJE3055 TRANSISTOR (NPN)  
TO-220  
1. BASE  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
PCM:  
2
W (Tamb=25)  
Collector current  
ICM:  
1 2 3  
10  
70  
A
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=1mA, IE=0  
MIN  
70  
60  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
Ic=200mA, IB=0  
IE=1mA, IC=0  
V
mA  
mA  
mA  
V
CB=70V, IE=0  
CE=30V, IE=0  
1
0.7  
5
ICEO  
Collector cut-off current  
V
IEBO  
Emitter cut-off current  
VEB=5V, IC=0  
hFE(1)  
V
CE=4V, IC=4A  
20  
5
100  
DC current gain  
hFE(2)  
VCE=4V, IC=10A  
V
V
IC=4A, IB=400mA  
IC=10A, IB=3.3A  
1.1  
8
VCE(sat)  
Collector-emitter saturation voltage  
VBE  
V
Base-emitter voltage  
Transition frequency  
V
CE=4V, IC=4A  
1.8  
MHz  
fT  
VCE=10V, IC=500mA  
2
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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