概述
数据手册BAW56W_15 概述
SWITCHING DIODE
BAW56W_15 数据手册
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BAW56W
SOT-323 Plastic-Encapsulate DIODE
SOT-323
BAW56W
SWITCHING DIODE
FEATURES
1. 25¡ À0. 05
Power dissipation
PD:
2. 30¡ À0. 05
200 mW (Tamb=25℃)
Collector current
IO:
Collector-base voltage
VR:
150 mA
75
V
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
Marking: KJC
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR) R
IR
Test conditions
IR= 100µA
MIN
MAX
UNIT
75
V
Reverse breakdown voltage
Reverse voltage leakage current
VR=75V
2.5
µA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
715
855
1000
1250
mV
Forward voltage
VF
CD
trr
VR=0V, f=1MHz
2
Diode capacitance
pF
nS
IF=IR=10mA
Irr=0.1×IR
4
Reveres recovery time
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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