2SD874A_15 [WINNERJOIN]
NPN TRANSISTOR;型号: | 2SD874A_15 |
厂家: | SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
描述: | NPN TRANSISTOR |
文件: | 总1页 (文件大小:127K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
2SD874A
SOT-89
1. BASE
2SD874A TRANSISTOR (NPN)
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
1
PCM:
500
mW (Tamb=25℃)
2
3
Collector current
ICM:
1
A
V
Collector-base voltage
V(BR)CBO
:
60
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=10µA, IE=0
Ic=2mA, IB=0
MIN
60
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=10µA, IC=0
µA
µA
VCB=20V, IE=0
0.1
0.1
340
IEBO
Emitter cut-off current
VEB=4V, IC=0
hFE(1)
VCE=10V, IC=500mA
85
50
DC current gain
hFE(2)
VCE=5V, IC=1A
VCE(sat)
VBE(sat)
fT
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=500mA, IB=50mA
IC=500mA, IB=50mA
0.4
1.2
MHz
pF
VCE=10V, IC=50mA, f=200MHz
200
20
Cob
Collector output capacitance
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
WEJ ELECTRONIC CO.,LTD
Range
85-170
120-240
170-340
Marking
YQ
YR
YS
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
相关型号:
2SD875
Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO.
TYSEMI
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