2SC945LT1 [WINNERJOIN]
NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
| 型号： | 2SC945LT1 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总1页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
2SC945LT1
NP N EP ITAXIAL S ILICON TRANS IS TOR
*
*
*
*
Collector Current: Ic= 150mA
Collector-Emitter Voltage:Vce= 50V
High Total Power Dissipation:Pc=225mW
High Hfe And Good Linearity
1.
1.BASE
2.EMITTER
2.4
1.3
3.COLLECTOR
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Vcbo
Vceo
Ic
Rating
60
Unit
V
50
V
Unit:mm
150
225
mA
mW
Collector Dissipation Ta=25
*
PD
Junction Temperature
Storage Temperature
Tj
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ
Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVcbo
BVceo
60
50
V
V
Ic=100uA Ie=0
Ic= 1mA Ib=0
Collector-Emitter
Voltage#
Breakdown
Collector-Base Cutoff Current
DC Current Gain
Icbo
Hfe
100
700
0.3
nA
Vcb= 60V Ie=0
70
Vce= 6V Ic= 1mA
Collector-Emitter Saturation Voltage Vce(sat)
V
Ic= 100mA Ib= 10mA
Vcb= 10V Ie=0 f=1MHz
Output Capacitance
Cob
fT
2.2
3.5
PF
Current Gain-Bandwidth Product
150
MHz Vce= 5V Ic= 10mA
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25
Pulse Test : Pulse Width 300uS,Duty cycle 2%
.
#
DEVICE MARKING:
2SC945LT1=HF
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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