WSB20L100TF-3/T [WILLSEMI]
Power Schottky Barrier Rectifier;型号: | WSB20L100TF-3/T |
厂家: | WILLSEMI |
描述: | Power Schottky Barrier Rectifier |
文件: | 总3页 (文件大小:1892K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WSB20L100T/WSB20L100TF
WSB20L100T/ WSB20L100TF
Power Schottky Barrier Rectifier
Features
www.sh-willsemi.com
Circuit
2x10A average rectified forward current
Low forward voltage and Low leakage current
High Junction temperature
WSB
20L100
WSB
20L100
TFYW
TOYW
High forward and reverse Surge capability
A1 K1/K2 A2
A1
K1/K2 A2
Applications
TO-220F
TO-220
High frequency switch model power supplies
WSB20L100 = Device code
DC-DC Convertors, Power adapters
TO TF
/
= Special code
=Year
Y
W
=Week(A~z)
Marking
Absolute maximum ratings
Parameter
Symbol
Value
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VRM
VR
IF
100
100
10
V
Per diode
A
Average rectified forward current
Per device
IF
20
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
200
A
Junction temperature
Operating temperature
Storage temperature
TJ
150
0C
0C
0C
Topr
Tstg
-55 ~ 150
-55 ~ 150
Thermal Resistance Ratings
Maximum Thermal Resistance
TO-220
RθJC
2.0
°C/W
Junction To case (Per leg)
Order information
Units/Tube
Device
Package
Marking
WSB20L100T-3/T
50
WSB20L100TOYW
WSB20L100TFYW
TO-220
WSB20L100TF-3/T
50
TO-220F
Will Semiconductor Ltd.
1
Jan, 2015 - Rev. 1.2
WSB20L100T/WSB20L100TF
(Per diode, T =25oC)
Electronics characteristics
A
Parameter
Symbol
Condition
IR=0.5mA
Min.
Typ.
Max.
Unit
V
Reverse Breakdown Voltage
Forward voltage
VR
VF
IR
100
0.6
IF=10A
0.7
V
11
Reverse current
VR=100V
-
-
100
uA
pF
Junction capacitance
CJ
VR=25V, F=1MHz
180
Typical characteristics (Ta=25oC, unless otherwise noted)
10
1
0.01
1E-4
1E-6
1E-8
-40oC
-25oC
25oC
-40O
C
C
-25O
25O
85O
C
C
85oC
0.1
125oC
150oC
125O
150O
C
C
0.01
1E-3
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage (V)
Reverse Voltage (V)
Forward voltage vs. Forward current
Reverse current vs. Reverse voltage
10000
1000
100
12
f = 1MHz
10
8
6
4
2
0
0
5
10
15
20
25
0
25
50
75
100
125
150
Reverse Voltage (V)
Case Temperature (0C)
Forward Current Derating Curve
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2
Jan, 2015 - Rev. 1.2
WSB20L100T/WSB20L100TF
Package outline dimensions
TO-220
TO-220F
Will Semiconductor Ltd.
3
Jan, 2015 - Rev. 1.2
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