SMG2302B [WILLAS]
20V N-Channel Enhancement-Mode MOSFET;
| 型号： | SMG2302B |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | 20V N-Channel Enhancement-Mode MOSFET |
| 文件： | 总6页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2302B
20V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON)≦85mΩ@VGS=4.5V
● RDS(ON)≦115mΩ@VGS=2.5V
● RDS(ON)≦135mΩ@VGS=1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SOT– 23
3
APPLICATIONS
● Power Management in Notebook
● Portable Equipment
● Load Switch
● DSC
1
Ordering Information
Device
Shipping
Marking
2
3000/Tape&Reel
SMG2302B
02B
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Symbol
Drain-Source Voltage
Limit
Unit
V
VDSS
GSS
20
±8
Gate-Source Voltage
Continuous Drain
Current(tJ=150℃)
V
V
T
T
A
=25℃
=70℃
2.8
2.2
10
I
D
A
A
Pulsed Drain Current
I
DM
Maximum Body-Diode Continuous Current
I
S
1.6
1.25
0.8
150
A
W
T
T
A
=25℃
=70℃
Maximum Power Dissipation
Operating Junction Temperature
Maximum Junction-to-Ambient
P
D
A
℃
T
J
T≦10 sec
77
℃/W
RthJA
Steady State
105
*The device mounted on 1in2 FR4 board with 2 oz copper
2014-05
WILLAS ELECTRONIC CORP.
SMG2302B
20V N-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limit
Min Typ
Max
Unit
STATIC PARAMETERS
V
V
V
V
V
GS=0V, I
D
=250μA
V
V
(BR)DSS
GS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
20
V
DS=VGS, I
D
=250μA
0.6
0.9
1.2
±100
1
I
GSS
Gate-Body Leakage Current
DS=0V, VGS=±8V
DS=20V, VGS=0V
DS=20V, VGS=0V
nA
μA
I
DSS
Zero Gate Voltage Drain Current
On-State Drain Current a
10
T
V
V
V
V
V
J
=55℃
DS≧5V, VGS= 4.5V
DS≧5V, VGS= 2.5V
6
4
I
D(ON)
A
GS=4.5V, I
GS=2.5V, I
GS=1.8V, I
D= 2.8A
D= 2.5A
D= 2.2A
55
65
85
115
130
1.2
mΩ
R
DS(ON)
Drain-Source On-Resistance
Diode Forward Voltage
80
V
SD
I
S
=1A, VGS=0V
0.75
V
DYNAMIC PARAMETERS
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
9
2.2
3
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
V
DS=10V, VGS=4.5V, I
D
=2.8A
nC
pF
450
72
22
9
VDS=10V, VGS=0V, f=1MHZ
V
DD=10V, R
L
=10Ω
=6Ω
23
38
3
ns
VGEN=4.5Ω, R
G
Turn-Off Delay Time
Fall Time
td(off)
tf
Notes:
≦ 300us, duty cycle≦ 2%
a. Pulse test; pulse width
2014-05
WILLAS ELECTRONIC CORP.
SMG2302B
20V N-Channel Enhancement-Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
2014-05
WILLAS ELECTRONIC CORP.
20V N-Channel Enhancement-Mode MOSFET
SMG2302B
Typical Characteristics (TJ =25℃ Noted)
2014-05
WILLAS ELECTRONIC CORP.
WILLAS
SMG2302B
20V N-Channel Enhancement-Mode MOSFET
Outline Drawing
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
Rev.D
2014-05
WILLAS ELECTRONIC CORP.
SMG2302B
20V N-Channel Enhancement-Mode MOSFET
Ordering Information:
Device PN
SMG2302B ‐T(1 )G(2)‐WS
Note: (1) Packing code, Tape & Reel
Packing
Tape&Reel: 3 Kpcs/Reel
(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H”
***Disclaimer***
WILLAS reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifications can
and do vary in different applications and actual performance may vary over time.
WILLAS does not assume any liability arising out of the application or
use of any product or circuit.
WILLAS products are not designed, intended or authorized for use in medical,
life‐saving implant or other applications intended for life‐sustaining or other related
applications where a failure or malfunction of component or circuitry may directly
or indirectly cause injury or threaten a life without expressed written approval
of WILLAS. Customers using or selling WILLAS components for use in
such applications do so at their own risk and shall agree to fully indemnify WILLAS
Inc and its subsidiaries harmless against all claims, damages and expenditures.
2014-05
WILLAS ELECTRONIC CORP.
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