SE3080 [WILLAS]
30V,80A N-Channel MOSFET;
| 型号： | SE3080 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | 30V,80A N-Channel MOSFET |
| 文件： | 总5页 (文件大小：1385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
SE3080
30V,80A N-Channel MOSFET
Revision:A
● High density cell design for ultra low Rdson
General Description
The SE3080 uses advanced trench ● Fully characterized Avalanche voltage and current
technology and design to provide excellent ● Good stability and uniformity with high EAS
RDS(ON) with low gate charge. It can be ● Excellent package for good heat dissipation
used in a wide variety of applications.
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● RoHS product for packing code suffix "G"
Features
● VDS= 30V，ID = 80A
R
R
DS(ON) < 7.5mΩ (VGS = 10V)
DS(ON) < 10mΩ (VGS = 5V)
Halogen free product for packing code suffix "H"
●
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Symbol
Rating
30
Units
V
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
±20
V
Drain Current Continuous
ID
80
A
Drain Current Continuous（Tc=100℃）
Pulsed Drain Current
ID（100℃）
50
A
IDM
PD
EAS
TJ
170
A
Total Power Dissipation
83
W
mJ
°C
Single pulse avalanche energy（Note 5）
Operating Junction Temperature Range
150
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
1.8
Max
Units
Thermal Resistance ,Junction-to-case（Note 2）
Rθ
-
°C/W
JC
2012-07
WILLAS ELECTRONIC CORP.
SE3080
WILLAS
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=250μA, VGS=0 V
VDS=30V, VGS=0 V
VDS=0 V, VGS=±20 V
30
V
1
μA
IGSS
±100 nA
ON CHARACTERISTICS (Note 3)
VDS=VGS ID=250uA
VGS(th)
RDS(ON)
|Yfs|
Gate Threshold Voltage
1
1.5
5.5
7.5
3
V
VGS=10V, ID=30A
7.5
10
mΩ
mΩ
S
Static Drain-Source On-Resistance2
Forward Transfer Admittance
VGS=5V, ID=24A
VGS = 5 V, IS =24A
20
DYNAMIC CHARACTERISTICS (Note 4)
C
C
C
iss
Input Capacitance
pF
pF
pF
2330
460
oss
rss
Output Capacitance
V
GS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
230
SWITCHING CHARACTERISTICS (Note 4)
td(on)
Turn-on Delay Time
VDD=10V,ID=30A
20
15
60
10
51
14
11
nS
nS
nS
nS
nC
nC
nC
VGS=10V,RGEN=2.7Ω
tr
td(0ff)
tf
Turn-on Rise Time
Turn-off Delay Time
Turn-off fall Time
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=10V,ID=30A
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
IS
Diode Forward Voltage(Notes 3)
VGS=0V,IS=24A
1.2
80
50
20
V
A
Diode Forward Current(Notes 2)
Reverse Recovery Time
trr
TJ=25℃,IF=80A
32
12
nS
nC
di/dt=100A/μS(Note 3)
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω
2012-07
WILLAS ELECTRONIC CORP.
SE3080
WILLAS
Test circuit
1
EAS test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
2012-07
WILLAS ELECTRONIC CORP.
SE3080
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
WILLAS
2012-07
WILLAS ELECTRONIC CORP.
SE3080
WILLAS
2012-07
WILLAS ELECTRONIC CORP.
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