C1815 [WILLAS]
SOT-23 Plastic-Encapsulate Transistors; SOT- 23塑封装晶体管
| 型号： | C1815 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-23 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
C1815
SOT-23 Plastic-Encap sulate Transistors
SOT-23
TRANSISTOR (NPN)
FEATURES
Power dissipation
Pb-Free package is available
1. BASE
RoHS product for packing code suffix ”G”
2. EMITTER
Halogen free product for packing code suffix “H”
3. COLLECTOR
MARKING : HF
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V
VCBO
VCEO
VEBO
IC
60
50
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
150
200
150
-55-150
mA
mW
℃
PC
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
ICBO
Test conditions
IC= 100uA, IE=0
IC= 0.1mA, IB=0
VCB=60V, IE=0
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
60
50
V
0.1
0.1
0.1
400
0.25
1
uA
uA
uA
Collector cut-off current
ICEO
VCE=50V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE
VCE= 6V, IC= 2mA
IC=100mA, IB= 10mA
IC=100mA, IB= 10mA
130
80
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
V
CE=10V, IC= 1mA,
Transition frequency
fT
MHz
f=30MHz
CLASSIFICATION OF h FE
Rank
L
H
Range
130-200
200-400
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
C1815
SOT-23 Plastic-Encap sulate Transistors
Typical Characteristics
IC ——
hFE ——
IC
VCE
5
4
3
2
1
0
1000
100
10
16uA
COMMON EMITTER
Ta=25℃
14uA
Ta=100℃
Ta=25℃
12uA
10uA
8uA
6uA
4uA
IB=2uA
COMMON EMITTER
VCE= 6V
0.1
1
10
100 150
0
1
0
2
4
6
8
10
150
1200
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VBEsat —— IC
VCEsat ——
IC
500
2000
1000
Ta=25℃
100
Ta=100 ℃
Ta=100 ℃
Ta=25℃
β=10
β=10
10
100
0.1
150
100
150
10
100
1
10
100
COLLECTOR CURREMT IC (mA)
COLLECTOR CURREMT IC (mA)
IC ——
VBE
fT ——
IC
1000
100
10
150
100
COMMON EMITTER
VCE= 6V
10
1
COMMON EMITTER
VCE=10V
Ta=25℃
0.1
300
600
900
0.1
1
10
BASE-EMMITER VOLTAGE VBE (mV)
COLLECTOR CURRENT IC (mA)
Cob/Cib ——
VCB/VEB
PC —— Ta
250
200
150
100
50
50
10
f=1MHz
IE=0/IC=0
Ta=25 ℃
Cib
Cob
0.1
0
0.1
1
10
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE Ta (℃)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
C1815
SOT-23 Plastic-Encap sulate Transistors
Outline Drawing
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
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RECTRON
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